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Diodes Incorporated DMN6069SFGQ-13

Part No.:
DMN6069SFGQ-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-PowerVDFN
Datasheet:
AetrixDMN6069SFGQ-13.pdf
Description:
MOSFET N-CH 60V 18A POWERDI3333
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,945

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Product details

Overview

DMN6069SFGQ-13 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in PowerDI3333-8 package, rated for 18A continuous drain current at TC = +25°C, with RDS(ON) of 50mΩ @ VGS = 10V and 63mΩ @ VGS = 4.5V. It delivers low conduction loss and fast switching for high-efficiency DC-DC converters and automotive power management systems.

For engineers reviewing the DMN6069SFGQ-13 datasheet, DMN6069SFGQ-13 pinout, DMN6069SFGQ-13 application, or DMN6069SFGQ-13 equivalent, key selection criteria include its AEC-Q101 qualification, thermally efficient PowerDI3333-8 footprint, body diode recovery time (tRR = 11–22 ns), and gate charge profile (Qg = 14–25 nC @ VGS = 10V).

Technical Context

This MOSFET employs planar trench-gate technology to achieve low RDS(ON) while maintaining robust avalanche capability (IAS = 12A, EAS = 7.2 mJ). Its gate threshold voltage (VGS(TH) = 1–3V) ensures reliable turn-on with standard 4.5V logic-level drivers.

The device integrates a fast, low-VSD body diode (VSD ≤ 1.1V @ IS = 2.5A) and exhibits tightly controlled dynamic parameters: Crss = 28–55 pF, Qgd = 2.3–5 nC, and tD(OFF) = 12–24 ns - enabling stable operation in synchronous buck topologies up to 1 MHz.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 60 V - Maximum blocking voltage for 12V/24V automotive and industrial DC-DC input stages
RDS(ON) 50 mΩ @ VGS = 10V - Enables <1W conduction loss at 14A in TO-252-equivalent thermal conditions
ID (continuous) 18 A @ TC = +25°C - Supports high-current power rails without external heatsinking on 2oz copper PCBs
Qg 14–25 nC @ VGS = 10V - Determines gate driver power requirement and switching transition time in hard-switched converters
tRR 11–22 ns - Minimizes reverse recovery loss and shoot-through risk in synchronous rectification
TJ range −55°C to +150°C - Validated for under-hood automotive environments per AEC-Q101 stress testing
RθJC 5 °C/W - Enables direct thermal coupling to heatsink or copper plane for high-power density layouts

Pinout & Package

Package: PowerDI3333-8 - surface-mount, thermally enhanced 8-pin leadless package with exposed drain paddle; 3.3 mm × 3.3 mm footprint; 0.4 mm nominal height; RoHS-compliant matte tin finish over copper leadframe.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3, 4, 5, 6, 7 Drain (D) Internally connected to exposed metal paddle - primary current path and thermal conduction node
8 Source (S) Low-side return path; electrically isolated from drain; connects to ground or low-side switch node
G (Gate) Control terminal Located between pins 7 and 8 on top side; requires <3V threshold margin for logic-level drive compatibility

Key Features

Feature Design Value
Low RDS(ON) at 4.5V drive 63 mΩ enables use with 3.3V/5V microcontrollers without level-shifting in compact power modules
AEC-Q101 qualified Validated for automotive applications including engine control units and ADAS power supplies
PowerDI3333-8 footprint 33% board area vs SO-8 - supports ultra-dense DC-DC converter designs on space-constrained PCBs
Green, halogen-free construction <900 ppm Br, <900 ppm Cl, <1000 ppm Sb - meets global environmental compliance mandates without performance trade-offs
Fast body diode recovery tRR = 11–22 ns reduces cross-conduction losses in synchronous buck and boost converters

Applications

Automotive Body Control Module Industrial DC-DC Converter

Use Scenario: High-side load switching for LED headlamps and HVAC actuators in 12V/24V vehicle electrical architecture.

IC Role / Device Role / Timing Role: N-channel high-side switch with integrated charge pump or external bootstrap gate drive.

Use Value: 60V rating withstands load dump transients; AEC-Q101 qualification ensures reliability across −40°C to +125°C ambient.

Use Scenario: Primary-side synchronous rectifier in isolated 48V-to-12V telecom and server power supplies.

IC Role / Device Role / Timing Role: Low-loss secondary-side switch operating at 300–500 kHz with tight dead-time control.

Use Value: 50mΩ RDS(ON) and 25nC Qg reduce conduction and switching losses simultaneously at full load.

Laptop Adapter Power Stage USB-C PD Power Delivery

Use Scenario: Secondary-side synchronous rectification in compact 65W laptop AC-DC adapters.

IC Role / Device Role / Timing Role: Fast-turning N-MOSFET replacing Schottky diodes in LLC resonant output stage.

Use Value: 11ns tRR eliminates need for complex adaptive dead-time control; 3.3mm × 3.3mm footprint saves >15% board area.

Use Scenario: Input protection and programmable current limiting in 100W USB-C PD sink circuits.

IC Role / Device Role / Timing Role: Load switch controlling VBUS path with precise overcurrent response via external sense resistor.

Use Value: 18A ID rating supports 5A@20V operation; RDS(ON) stability over temperature ensures accurate current sensing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN6070SFDFQ-7 Same PowerDI3333-8 package; higher RDS(ON) (65mΩ @ 10V); lower Qg (10.5 nC) Better suited for high-frequency, low-duty-cycle switching where gate drive loss dominates Select when prioritizing switching efficiency over conduction loss in <500 kHz designs
IPD25N06N3GATMA1 TO-252-3 package; lower RDS(ON) (25mΩ @ 10V); higher Qg (32 nC); no AEC-Q101 rating Requires larger PCB area and lacks automotive qualification; better for cost-sensitive industrial use Choose only for non-automotive applications needing sub-30mΩ RDS(ON) and accepting larger thermal solution

Compared with DMN6069SFGQ-13, DMN6070SFDFQ-7 trades conduction loss for reduced gate drive energy, while IPD25N06N3GATMA1 offers lower RDS(ON) but sacrifices automotive qualification and board-area efficiency - making DMN6069SFGQ-13 optimal for AEC-Q101-compliant, space-constrained power stages.

Availability

DMN6069SFGQ-13 is available at Aetrix Electronics and suitable for automotive body control modules, industrial DC-DC converters, and USB-C PD power delivery systems requiring stable component supply, AEC-Q101 compliance, and high-density thermal management.

Supply support for DMN6069SFGQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and consumer markets.

DMN6069SFGQ-13 belongs to Diodes' AEC-Q101-qualified PowerMOS family, engineered specifically for high-efficiency, thermally constrained power conversion in automotive and industrial environments.

FAQ

Is DMN6069SFGQ-13 suitable for high-side switching in automotive 12V systems?

Yes - its 60V VDSS, AEC-Q101 qualification, and −55°C to +150°C operating range make it appropriate for high-side loads such as LED lighting and solenoid drivers. Gate threshold voltage (1–3V) allows direct drive from 3.3V/5V controllers when used with bootstrap or charge-pump gate drivers.

What is the maximum continuous drain current at 100°C case temperature?

Per the datasheet's derating curve, DMN6069SFGQ-13 supports 11.5A continuous drain current at TC = +100°C. This value is derived from linear interpolation between the specified 14.5A at +70°C and 0A at ~165°C junction limit, assuming RDS(ON) increase is offset by thermal resistance reduction on optimized 2oz copper PCBs.

Does DMN6069SFGQ-13 require a gate resistor for EMI suppression in 500 kHz DC-DC converters?

A 2.2–4.7Ω gate resistor is recommended to dampen ringing caused by gate-drain capacitance (Crss = 28–55 pF) and parasitic inductance. The device's typical gate resistance (Rg = 2.2–4Ω) interacts with external gate drive impedance to shape turn-on/turn-off slew rates and minimize radiated emissions in high-frequency power stages.

Can DMN6069SFGQ-13 replace SO-8 packaged MOSFETs without PCB redesign?

No - PowerDI3333-8 has a different pad layout, thermal pad configuration, and pin assignment than SO-8. While both are 8-pin packages, the PowerDI3333-8 places all drains on one side with an exposed paddle, requiring dedicated land pattern per Diodes' recommended 3.3mm × 3.3mm footprint and thermal via array - not a drop-in replacement.

DMN6069SFGQ-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerVDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
50mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
25 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1480 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
2.4W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PowerDI3333-8

DMN6069SFGQ-13 FAQ

1.How can I place an order for DMN6069SFGQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN6069SFGQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN6069SFGQ-13 reliable?

The price and inventory of DMN6069SFGQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN6069SFGQ-13 is usually 5 days.

3.What payment methods are accepted for DMN6069SFGQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN6069SFGQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN6069SFGQ-13?

DMN6069SFGQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN6069SFGQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN6069SFGQ-13?

For technical support, including DMN6069SFGQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN6069SFGQ-13 requirements.

6.How does Aetrix verify that DMN6069SFGQ-13 is sourced from the original manufacturer or authorized distributors?

All DMN6069SFGQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN6069SFGQ-13 meets industry standards.

7.What is the process for return or replacement of DMN6069SFGQ-13?

All DMN6069SFGQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN6069SFGQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN6069SFGQ-13 part is unused and in its original packaging.

Return procedure for DMN6069SFGQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN6069SFGQ-13 Tags

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