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Diodes Incorporated DMN6069SFVW-7
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- Part No.:
- DMN6069SFVW-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMN6069SFVW-7.pdf
- Description:
- MOSFET BVDSS: 41V~60V POWERDI333
- Quantity:
- Payment:
- Shipping:
Inventory:8,977
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Product details
Overview
DMN6069SFVW-7 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in PowerDI3333-8 package, delivering 69 mΩ RDS(ON) at VGS = 10 V and 100 mΩ at VGS = 4.5 V, with 14 A continuous drain current at TC = +25°C. It is engineered for high-efficiency DC-DC converters where low conduction loss and compact board area are critical.
For engineers reviewing the DMN6069SFVW-7 datasheet, DMN6069SFVW-7 pinout, DMN6069SFVW-7 application, or DMN6069SFVW-7 equivalent, key selection criteria include its wettable flank terminals for automated optical inspection, thermally efficient PowerDI3333-8 footprint occupying only 33% of SO-8 board area, and production-tested unclamped inductive switching (UIS) capability.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low RDS(ON) while maintaining fast switching performance-evidenced by 14 nC total gate charge at VGS = 10 V and 3.6 ns turn-on delay. Its body diode exhibits 11 ns reverse recovery time and 5.1 nC QRR, supporting synchronous rectification in buck converters.
The device is rated for ±20 V gate-source voltage and operates across –55°C to +150°C junction temperature. Thermal resistance from junction-to-case is 3.9°C/W, enabling 32 W power dissipation when mounted on an exposed drain pad, and it meets JEDEC reliability standards for high-reliability industrial use.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - supports input rails up to 48 V nominal systems with margin for transients |
| RDS(ON) | 69 mΩ @ VGS = 10 V - ensures ≤0.97 W conduction loss at 14 A continuous current |
| ID (continuous) | 14 A @ TC = +25°C - enables high-current power stages without external heatsinking |
| Qg | 14 nC @ VGS = 10 V - determines gate driver strength requirement for <100 ns switching transitions |
| trr | 11 ns - minimizes body diode reverse recovery loss in hard-switched topologies |
| RθJC | 3.9°C/W - allows direct thermal path to PCB copper or heatsink via exposed drain pad |
| EAS | 7.2 mJ - provides robustness against inductive load switching events without snubbers |
Pinout & Package
Package: PowerDI3333-8 (SWP), surface-mount, thermally enhanced with exposed drain pad and wettable flank leads for AOI compatibility.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 (Drain) | Power Drain Connection | Four parallel drain terminals tied to internal die drain and exposed thermal pad - primary heat path and high-current return |
| 5 (Gate) | Control Input | Low-impedance gate terminal requiring <14 nC charge for full enhancement; sensitive to ESD |
| 6, 7, 8 (Source) | Power Source Return | Three-source terminals reduce source inductance and improve current sharing in high-frequency switching |
Key Features
| Feature | Design Value |
|---|---|
| Wettable flank leads | Enables 100% automated optical inspection (AOI) of solder fillets without X-ray |
| 100% UIS tested | Guarantees avalanche ruggedness up to 12 A and 7.2 mJ per pulse in production |
| PowerDI3333-8 footprint | Reduces board area by 67% vs. SO-8 - critical for space-constrained DC-DC modules |
| Lead-free & halogen-free | Complies with RoHS 3 and automotive green standards (<900 ppm Br/Cl, <1000 ppm Sb) |
| Junction temp range | –55°C to +150°C operation - qualified for extended industrial and under-hood environments |
Applications
| Point-of-Load DC-DC Converter | USB-C PD Power Path |
|---|---|
|
Use Scenario: High-density 12 V → 3.3 V/5 V conversion in telecom baseband cards with strict thermal limits. IC Role / Device Role: Synchronous high-side switch in buck topology, operating at 500 kHz–1 MHz. Use Value: 69 mΩ RDS(ON) and 14 nC Qg enable >94% efficiency at 10 A load while fitting within 3.3 mm × 3.3 mm footprint. |
Use Scenario: Input power path protection and OR-ing in dual-input USB-C PD adapters. IC Role / Device Role: Low-loss reverse-polarity and overvoltage protection switch upstream of controller IC. Use Value: 100 mΩ RDS(ON) at 4.5 V gate drive ensures <500 mW loss at 2.2 A, compatible with standard 3.3 V GPIO control. |
| Industrial Motor Driver Half-Bridge | LED Driver High-Side Switch |
|
Use Scenario: 24 V BLDC gate driver stage in factory automation actuators with PWM commutation. IC Role / Device Role: Low-side switch in half-bridge configuration, handling 10 A peak motor current. Use Value: 11 ns turn-off fall time and 12 A avalanche rating prevent shoot-through failure during fast PWM transitions. |
Use Scenario: Constant-current LED string control in smart lighting fixtures with dimming interface. IC Role / Device Role: High-side current regulator switch modulated via PWM or analog voltage. Use Value: 3.0 V gate threshold and stable VGS(TH) over temperature ensure reliable turn-on with microcontroller GPIOs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN6069SFVWQ-7 | Automotive-grade variant qualified to AEC-Q101; identical electrical specs and package | Required for automotive infotainment or ADAS power supplies needing PPAP documentation | Select when IATF 16949 traceability, change control, and extended temperature validation are mandatory |
| DMN3029LFG-7 | 30 V VDSS, 2.9 mΩ RDS(ON) @ 10 V, same PowerDI3333-8 package | Optimized for 12 V input systems (e.g., PoE, battery-powered devices); lower voltage rating | Choose for higher efficiency below 15 V input where 60 V headroom is unnecessary |
Compared with DMN6069SFVW-7, the DMN6069SFVWQ-7 adds automotive qualification without electrical trade-offs, while the DMN3029LFG-7 trades voltage rating for significantly lower RDS(ON)-making it superior in 12 V systems but unsafe above 30 V.
Availability
DMN6069SFVW-7 is available at Aetrix Electronics and suitable for point-of-load DC-DC converters, USB-C PD power path management, and industrial motor driver half-bridges requiring stable component supply, JEDEC-compliant reliability, and compact thermal packaging.
Supply support for DMN6069SFVW-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.
This MOSFET belongs to Diodes' PowerDI®3333-8 portfolio, designed specifically for space-constrained, thermally demanding power conversion applications where board area reduction and AOI-compatible assembly are essential.
FAQ
What is the maximum safe operating temperature for DMN6069SFVW-7?
The device is rated for junction temperatures from –55°C to +150°C. At TC = +25°C, it supports 32 W power dissipation; derating is required above that case temperature per the 3.9°C/W RθJC. The absolute maximum TJ must not exceed +150°C to avoid permanent degradation of the silicon die or interconnects.
Does DMN6069SFVW-7 require a gate resistor for typical 500 kHz switching?
Yes-a 2.2 Ω to 10 Ω gate resistor is recommended to dampen ringing caused by the 2.2 Ω intrinsic gate resistance and layout inductance. With 14 nC Qg, a 4.7 Ω resistor yields ~66 ns turn-on delay and controls dV/dt to prevent false triggering in high-noise environments.
Can DMN6069SFVW-7 be used in linear regulation mode?
No-it is not characterized or guaranteed for linear (ohmic) operation. Its Safe Operating Area (SOA) curve shows limited DC capability: at VDS = 10 V, max continuous current drops to ~2.5 A due to thermal limits. Linear use risks thermal runaway and premature failure.
Is the PowerDI3333-8 package compatible with standard reflow profiles?
Yes-the package is qualified for IPC/JEDEC J-STD-020 moisture sensitivity level 1 and withstands peak reflow temperatures up to 260°C. The matte tin finish on copper leadframe ensures reliable solderability per MIL-STD-202 Method 208, and the wettable flanks support post-reflow AOI without voiding.
DMN6069SFVW-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 4A (Ta), 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 69mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 740 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount, Wettable Flank
- Supplier Device Package:
- PowerDI3333-8 (SWP) Type UX
DMN6069SFVW-7 FAQ
1.How can I place an order for DMN6069SFVW-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN6069SFVW-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN6069SFVW-7 reliable?
The price and inventory of DMN6069SFVW-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN6069SFVW-7 is usually 5 days.
3.What payment methods are accepted for DMN6069SFVW-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN6069SFVW-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN6069SFVW-7?
DMN6069SFVW-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN6069SFVW-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN6069SFVW-7?
For technical support, including DMN6069SFVW-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN6069SFVW-7 requirements.
6.How does Aetrix verify that DMN6069SFVW-7 is sourced from the original manufacturer or authorized distributors?
All DMN6069SFVW-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN6069SFVW-7 meets industry standards.
7.What is the process for return or replacement of DMN6069SFVW-7?
All DMN6069SFVW-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN6069SFVW-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN6069SFVW-7 part is unused and in its original packaging.
Return procedure for DMN6069SFVW-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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