Diodes Incorporated DMN6070SSDQ-13

Overview

DMN6070SSDQ-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET rated for 60V drain-source voltage, with R_DS(ON) of 87 mΩ at V_GS = 10 V and 100 mΩ at V_GS = 4.5 V, delivering 2.7 A continuous drain current at +25°C. It is AEC-Q101 qualified, PPAP-capable, and designed for automotive power management functions including backlighting and DC-DC converters.

For engineers reviewing the DMN6070SSDQ-13 datasheet, DMN6070SSDQ-13 pinout, DMN6070SSDQ-13 application, or DMN6070SSDQ-13 equivalent, key selection criteria include its dual SO-8 configuration, low R_DS(ON) at 4.5 V gate drive, AEC-Q101 qualification, and 100% production-tested UIS capability - critical for automotive load switching reliability.

Technical Context

This dual MOSFET integrates two independent N-channel devices in a single SO-8 package, sharing no internal connection between channels. Each channel supports ±20 V gate-source voltage, operates from −55°C to +150°C junction temperature, and features low input capacitance (C_iss = 588 pF) and fast switching (t_r = 4.1 ns, t_f = 11 ns).

The device employs trench-gate silicon technology optimized for low conduction loss and high avalanche ruggedness (E_AS = 5 mJ, I_AS = 10 A). Its body diode exhibits V_SD = 0.75–1.1 V at 12 A and t_RR = 18 ns, enabling efficient synchronous rectification and flyback recovery in compact DC-DC topologies.

Key Specifications

Pinout & Package

Package: SO-8, surface-mount, molded plastic with UL 94V-0 rating, matte tin-plated copper leadframe, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Compared with DMN6070SFDE-7 and NTMFD4826NT1G, the DMN6070SSDQ-13 uniquely combines AEC-Q101 qualification, exposed-drain thermal performance (R_θJA = 83°C/W), and production-tested UIS - making it the sole option for thermally demanding, safety-critical automotive power stages requiring zero field failure risk.

Availability

DMN6070SSDQ-13 is available at Aetrix Electronics and suitable for automotive LED backlighting, DC-DC converter high-side switching, and body control module load driving requiring stable component supply across multi-year vehicle production cycles.

Supply support for DMN6070SSDQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets since 1969.

The DMN6070SSDQ-13 belongs to Diodes' AEC-Q101-qualified PowerMOS family, engineered specifically for automotive power switching applications demanding high UIS robustness, low gate charge, and extended temperature operation.

FAQ

Is DMN6070SSDQ-13 pin-compatible with other dual N-channel SO-8 MOSFETs?

No - DMN6070SSDQ-13 uses a proprietary pinout where pins 7 and 8 are internally tied to both drains and serve as thermal pads. Unlike standard dual SO-8 MOSFETs (e.g., dual-gate or half-bridge variants), its D1/S1/G1/D2/S2/G2 layout requires specific PCB footprint alignment and cannot be substituted without layout revision.

What is the maximum recommended gate drive voltage for reliable long-term operation?

The absolute maximum gate-source voltage is ±20 V, but Diodes specifies 10 V as the nominal drive for rated R_DS(ON). For automotive systems with transient immunity, 12 V gate drive is acceptable if clamped with a Zener (e.g., 12 V TVS), as V_GS(TH) remains stable up to 15 V per characterization data in Figure 8.

Does the device support synchronous rectification in buck converters?

Yes - the low R_DS(ON) (100 mΩ @ 4.5 V), fast switching (t_r = 4.1 ns, t_f = 11 ns), and low Q_gd/Q_gs ratio (1.9/1.7 nC) enable efficient synchronous rectification at frequencies up to 2 MHz. The body diode's 18 ns t_RR and 12 nC Q_RR further minimize reverse recovery loss.

How is thermal performance affected when the exposed drain pad is not soldered to PCB copper?

Without soldering pins 7/8 to a ≥1-inch² copper pour, R_θJA degrades from 83°C/W to 104°C/W (per Note 5 vs. Note 6), raising junction temperature by ~25°C at 2.5 A. This exceeds safe limits for sustained automotive operation and voids AEC-Q101 thermal validation - full thermal pad connection is mandatory.