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Diodes Incorporated DMN6075SQ-13

Part No.:
DMN6075SQ-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixDMN6075SQ-13.pdf
Description:
MOSFET BVDSS: 41V~60V SOT23 T&R
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,742

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Product details

Overview

DMN6075SQ-13 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in SOT23 package, qualified to AEC-Q101 for automotive use. It delivers RDS(ON) = 85 mΩ @ VGS = 10 V, ID = 2.5 A (TA = +25°C), and fast switching with tF = 11 ns - ideal for DC-DC converters and backlighting power stages.

For engineers reviewing the DMN6075SQ-13 datasheet, DMN6075SQ-13 pinout, DMN6075SQ-13 application, or DMN6075SQ-13 equivalent, key selection criteria include its AEC-Q101 qualification, low RDS(ON) at 4.5 V (120 mΩ), thermal resistance of 110 °C/W (with vias), and SOT23 footprint compatibility with space-constrained automotive PCB layouts.

Technical Context

This MOSFET operates as a single N-channel switch in high-side or low-side configurations, supporting continuous drain current up to 2.5 A at +25°C ambient with gate drive voltages from 4.5 V to 10 V. Its 60 V VDSS rating and ±20 V VGSS allow robust operation in 12 V/24 V automotive systems under load dump transients.

The device features low input capacitance (Ciss = 606 pF) and fast turn-off (tD(OFF) = 35 ns), enabling efficient PWM control in switching regulators. Its body diode has VSD = 0.8–1.2 V at IS = 2.5 A, supporting synchronous rectification and freewheeling in buck topologies.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS60 V - Withstands automotive load dump transients up to ISO 7637-2 Pulse 5a without clamping.
RDS(ON) @ 10 V85 mΩ - Enables <170 mW conduction loss at 2.5 A, reducing thermal stress in compact SOT23 layout.
RDS(ON) @ 4.5 V120 mΩ - Supports logic-level gate drive from 5 V microcontrollers in low-voltage power management circuits.
ID (max, TA = 25°C)2.5 A - Sustains peak current in DC-DC converter high-side switches with proper PCB copper area.
Ciss606 pF - Minimizes gate drive power requirement and enables >1 MHz switching in small-signal SMPS designs.
tF11 ns - Reduces switching transition time, lowering overlap losses and improving efficiency at 500 kHz–1 MHz.
TJ range−55°C to +150°C - Meets extended temperature requirements for under-hood automotive electronics.

Pinout & Package

SOT23-3 package: surface-mount, 3-terminal plastic case with matte tin–annealed copper leadframe; UL 94V-0 rated, moisture sensitivity level 1, weight ≈ 0.008 g.

Pin/TerminalCircuit RoleDesign Meaning
1 (Source)Current return path for channel conductionConnected to ground or low-side reference; thermally coupled to PCB copper for heat dissipation.
2 (Gate)Control electrode for channel formationHigh-impedance input requiring <100 nA leakage; sensitive to ESD; routed away from noisy traces.
3 (Drain)Main current output terminalConnected to switched load or inductor node; carries full load current and must be isolated from sensitive analog sections.

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive applications including engine control, body electronics, and ADAS power supplies.
Low RDS(ON) at 4.5 V120 mΩ enables direct interface with 5 V logic without level-shifting, simplifying gate driver design.
Fast switching (tF = 11 ns)Reduces energy loss during transitions, critical for high-frequency DC-DC converters targeting >500 kHz.
Halogen- and antimony-free "Green"Meets automotive RoHS 3 (2015/863/EU) and OEM chemical compliance requirements (Br+Cl <1500 ppm).
Thermal vias supportedPD = 1.15 W with thermal vias confirms suitability for thermally constrained modules like LED drivers and sensor power rails.

Applications

Automotive DC-DC ConvertersLED Backlight Drivers

Use Scenario: Step-down conversion from 12 V battery to 5 V/3.3 V for infotainment and cluster displays.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 300–600 kHz PWM frequency.

Use Value: Low RDS(ON) and fast tF reduce conduction and switching losses, maintaining >92% efficiency at 2 A load.

Use Scenario: Constant-current LED string control in instrument panel and center console backlighting.

IC Role / Device Role / Timing Role: Low-side PWM dimming switch modulating current through 1–4 series LEDs.

Use Value: 120 mΩ RDS(ON) at 4.5 V ensures full brightness control down to 1% duty cycle with minimal voltage headroom loss.

Automotive Power ManagementBody Control Module Loads

Use Scenario: Load switching for HVAC actuators, window lift motors, and mirror controls.

IC Role / Device Role / Timing Role: Protected high-side or low-side power switch with integrated reverse polarity protection via body diode.

Use Value: 60 V VDSS withstands load dump spikes; AEC-Q101 qualification ensures reliability over 15-year vehicle lifetime.

Use Scenario: Driving solenoids, relays, and small fans in door modules and lighting control units.

IC Role / Device Role / Timing Role: General-purpose discrete load switch controlled by 3.3 V/5 V MCU GPIO.

Use Value: SOT23 footprint allows dense placement on multi-layer BCM PCBs; 2.5 A rating supports 10 W loads at 12 V.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN6075SFG-7Same die, SOT23-3 package, but shipped in 3,000-piece tape-and-reel (vs. 10,000 for -13); identical electrical specs.No functional difference; selected when smaller reels align with pilot production or low-volume prototyping.Choose -7 for evaluation or low-run builds; -13 preferred for high-volume automotive manufacturing.
NTMFS4C09NT1G60 V, 3.2 mΩ @ 10 V (much lower RDS(ON)), SO-8FL package; higher current (12 A), larger footprint and thermal mass.Used in higher-power DC-DC stages (>5 A) where board space and thermal budget allow SO-8FL mounting.Select only if >3 A continuous current or <50 mΩ RDS(ON) is required; not drop-in compatible due to package and pinout mismatch.

Compared with DMN6075SQ-13, the -7 variant offers identical performance in smaller packaging for flexibility, while NTMFS4C09NT1G trades SOT23 compactness for significantly lower on-resistance and higher current capability - making it suitable for upgraded power stages rather than direct replacement.

Availability

DMN6075SQ-13 is available at Aetrix Electronics and suitable for automotive DC-DC converters, LED backlight drivers, and body control module loads requiring stable component supply across long production lifecycles.

Supply support for DMN6075SQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

The DMN6075SQ belongs to Diodes' AEC-Q101-qualified automotive MOSFET product line, engineered specifically for reliable power switching in harsh-temperature, high-reliability automotive subsystems including lighting, power management, and motor control.

FAQ

Is DMN6075SQ-13 suitable for high-temperature under-hood applications?

Yes. It is rated for TJ = −55°C to +150°C and qualified to AEC-Q101. Tested thermal resistance of 110 °C/W (with thermal vias) enables operation at full 2.5 A current in environments up to +105°C ambient, meeting under-hood requirements for engine bay modules.

What is the maximum safe gate-source voltage for DMN6075SQ-13?

The absolute maximum VGS is ±20 V per the datasheet. For reliable long-term operation, gate drive should be limited to ≤15 V to avoid oxide stress, especially in automotive systems with transient coupling. The threshold voltage VGS(TH) is 1–3 V, so 4.5 V or 10 V gate drive is standard.

Does DMN6075SQ-13 have an integrated ESD protection diode on the gate?

No. The device does not include internal gate ESD protection. External Zener clamping (e.g., 12 V TVS) is recommended between gate and source in automotive PCB layouts to prevent damage from human-body-model (HBM) or system-level ESD events exceeding ±100 nA IGSS rating.

Can DMN6075SQ-13 be used in synchronous rectification topologies?

Yes. Its body diode forward voltage is 0.8–1.2 V at 2.5 A, and RDS(ON) is low enough to reduce conduction loss below diode drop. When driven synchronously, it improves efficiency by 3–5% in buck converters operating above 1 A, provided gate timing avoids shoot-through.

DMN6075SQ-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
85mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
12.3 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
606 pF @ 20 V
FET Feature:
-
Power Dissipation (Max):
800mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3

DMN6075SQ-13 FAQ

1.How can I place an order for DMN6075SQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN6075SQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN6075SQ-13 reliable?

The price and inventory of DMN6075SQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN6075SQ-13 is usually 5 days.

3.What payment methods are accepted for DMN6075SQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN6075SQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN6075SQ-13?

DMN6075SQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN6075SQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN6075SQ-13?

For technical support, including DMN6075SQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN6075SQ-13 requirements.

6.How does Aetrix verify that DMN6075SQ-13 is sourced from the original manufacturer or authorized distributors?

All DMN6075SQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN6075SQ-13 meets industry standards.

7.What is the process for return or replacement of DMN6075SQ-13?

All DMN6075SQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN6075SQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN6075SQ-13 part is unused and in its original packaging.

Return procedure for DMN6075SQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN6075SQ-13 Tags

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