My Inquiry
My Account
Diodes Incorporated DMN60H080DS-13
- Part No.:
- DMN60H080DS-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
DMN60H080DS-13.pdf
- Description:
- MOSFET N-CH 600V 80MA SOT23-3
- Quantity:
- Payment:
- Shipping:
Inventory:6,050
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DMN60H080DS-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in SOT23 package, rated for 600V drain-source voltage, 100Ω RDS(ON) at VGS = 10V and 60mA, and optimized for level-shift and small-signal switching in space-constrained power-management circuits.
For engineers reviewing the DMN60H080DS-13 datasheet, DMN60H080DS-13 pinout, DMN60H080DS-13 application, or DMN60H080DS-13 equivalent, key selection criteria include high-voltage blocking capability (600V), low gate charge (1.7nC), thermal resistance (99°C/W on 1"×1" 2oz copper), and SOT23 footprint compatibility with low-power DC-DC and backlighting designs.
Technical Context
This MOSFET employs planar silicon technology to achieve stable 600V BVDSS with low input capacitance (25pF Ciss) and fast switching-evidenced by 7ns turn-on delay and 158ns fall time under 300V/60mA conditions. Its gate threshold voltage (1.5–3.0V) enables direct drive from 3.3V logic in level-shift configurations.
The device integrates a body diode with 1.5V forward voltage at 50mA and exhibits normalized RDS(ON) drift of ≤1.4× from –55°C to +150°C at VGS = 10V, supporting operation across industrial temperature ranges without gate drive recalibration.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| BVDSS | 600V - supports primary-side switching in offline flyback and auxiliary rail generation up to 400VAC mains-derived systems |
| RDS(ON) | 100Ω @ VGS = 10V, ID = 60mA - defines conduction loss in low-current signal-switching paths (e.g., enable control, bias sequencing) |
| Qg / Qgd | 1.7nC total gate charge, 0.9nC gate-drain charge - enables efficient 100kHz+ switching with minimal driver power in isolated gate-drive applications |
| Ciss / Crss | 25pF input capacitance, 1.4pF reverse transfer capacitance - reduces Miller effect and improves noise immunity in high-dV/dt environments |
| RθJA | 99°C/W on 1"×1" 2oz FR-4 - allows 70mA continuous current at TA = +70°C without heatsink in compact PCB layouts |
| VGS(TH) | 1.5–3.0V - ensures reliable turn-on from standard 3.3V microcontroller GPIOs without level-shifting circuitry |
| tF / tR | 158ns fall time, 10ns rise time - supports clean edge transitions in timing-critical level-shift and PWM signal routing |
Pinout & Package
SOT23-3 package: ultra-compact surface-mount outline (2.4mm × 1.3mm × 1.0mm), molded green plastic, matte tin-plated copper leadframe, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Current return path for channel conduction | Connected to system ground or low-side reference; forms cathode of integrated body diode |
| 2 (Gate) | Control electrode for channel formation | High-impedance input requiring <10µA leakage; sensitive to ESD (ESD-protected per datasheet) |
| 3 (Drain) | High-voltage output terminal | Handles 600V blocking; routed away from sensitive traces due to high dV/dt during switching |
Key Features
| Feature | Design Value |
|---|---|
| 600V BVDSS rating | Enables direct interface with 400VDC bus rails and 230VAC rectified inputs without external snubbing |
| Low Ciss (25pF) | Reduces gate drive power and improves immunity to coupling noise in mixed-signal PCBs |
| ESD-protected structure | Withstands >2kV HBM per JESD22-A114, eliminating need for external TVS on gate in most board-level ESD environments |
| Lead-free & halogen-free | Fully RoHS 3 compliant (<900ppm Br+Cl, <1000ppm Sb); qualified for automotive change-control programs upon request |
| 1.7nC total gate charge | Permits use of low-power gate drivers (e.g., TC4420 output stage) while maintaining <100ns switching transitions |
Applications
| Motor Control Interface | LED Backlight Driver |
|---|---|
|
Use Scenario: Isolated enable/disable control for BLDC gate-driver ICs in fan or pump modules. IC Role / Device Role / Timing Role: High-side level shifter translating 3.3V MCU output to 12V logic domain for driver IC EN pin. Use Value: 600V rating prevents latch-up during motor phase reversal transients; 1.5V VGS(TH) ensures full turn-on from 3.3V GPIO. |
Use Scenario: PWM dimming switch in CCFL or white LED backlight for industrial HMIs. IC Role / Device Role / Timing Role: Low-duty-cycle, high-voltage switch controlling current path to boost converter feedback node. Use Value: 158ns fall time preserves PWM fidelity at 20kHz; 100Ω RDS(ON) limits dimming resolution error to <0.5% at 50mA. |
| DC-DC Auxiliary Supply | Power Management Sequencing |
|
Use Scenario: Bias supply startup switch in offline flyback converters powering MCU and sensors. IC Role / Device Role / Timing Role: Delayed turn-on switch enabling soft-start of VCC rail after primary regulation stabilizes. Use Value: 600V BVDSS withstands reflected flyback spikes; 7ns tD(ON) supports precise 10ms startup timing windows. |
Use Scenario: Controlled power-up sequencing of FPGA I/O banks and core rails in embedded controllers. IC Role / Device Role / Timing Role: Low-current load switch enabling/disabling downstream LDO enable lines based on system state machine. Use Value: 1µA IDSS at 600V ensures <10nW standby leakage; SOT23 footprint saves board area vs. SO-8 alternatives. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel high-voltage small-signal MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN60H080LQ-7 | Same die, QFN-8 package (1.6mm × 1.6mm), 0.5mm pitch, RθJA = 80°C/W | Higher power handling (1.3W PD) but requires re-layout; not drop-in compatible with SOT23 footprints | Select when thermal budget demands >70mA continuous current at TA = +70°C |
| Si2302DS-T1-E3 | Lower BVDSS (20V), lower RDS(ON) (3.5Ω), higher ID (2.6A), same SOT23-3 | Unsuitable for >40V applications; lacks 600V isolation margin required in AC-connected circuits | Select only for low-voltage logic-level switching where 600V rating is unnecessary |
Compared with DMN60H080DS-13, DMN60H080LQ-7 offers superior thermal performance but requires PCB redesign, while Si2302DS-T1-E3 provides higher current capability at the cost of critical high-voltage safety margin-making the original SOT23 variant optimal for space-limited 600V signal-switching roles.
Availability
DMN60H080DS-13 is available at Aetrix Electronics and suitable for motor controls, LED backlighting, and DC-DC converters requiring stable component supply with guaranteed long-term sourcing and consistent parametric performance.
Supply support for DMN60H080DS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power, signal integrity, and protection solutions for industrial, computing, and consumer markets.
This device belongs to Diodes' high-voltage planar MOSFET product line, engineered specifically for level-shifting, signal switching, and auxiliary power control in compact, thermally constrained AC/DC and DC-DC systems.
FAQ
What is the maximum continuous drain current for DMN60H080DS-13 at 70°C ambient?
At TA = +70°C with 1"×1" 2oz copper PCB (Note 6), the continuous drain current is 70mA when VGS = 10V and 40mA when VGS = 4.5V. These values reflect thermal derating based on measured RθJA = 99°C/W and junction temperature limit of +150°C.
Can DMN60H080DS-13 be driven directly from a 3.3V microcontroller GPIO?
Yes-the gate threshold voltage range is 1.5V to 3.0V, and RDS(ON) remains below 290Ω at VGS = 4.5V and ID = 60mA. A 3.3V GPIO fully enhances the channel, delivering predictable on-resistance without external level shifting.
Does this MOSFET include integrated ESD protection?
Yes-the datasheet explicitly states "ESD PROTECTED" in the equivalent circuit diagram and specifies compliance with industry-standard HBM testing. No external gate protection is required for typical board-level ESD events.
What is the safe operating area (SOA) limitation at DC conditions?
Under DC conditions on a 1"×1" 2oz FR-4 board, the SOA is limited by RDS(ON) conduction heating. At VDS = 300V, maximum ID is ~10mA; at VDS = 100V, it rises to ~30mA-values derived from the Figure 12 SOA plot and thermal resistance data.
DMN60H080DS-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 80mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 100Ohm @ 60mA, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 1.7 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 25 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.1W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
DMN60H080DS-13 FAQ
1.How can I place an order for DMN60H080DS-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN60H080DS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN60H080DS-13 reliable?
The price and inventory of DMN60H080DS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN60H080DS-13 is usually 5 days.
3.What payment methods are accepted for DMN60H080DS-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN60H080DS-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN60H080DS-13?
DMN60H080DS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN60H080DS-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN60H080DS-13?
For technical support, including DMN60H080DS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN60H080DS-13 requirements.
6.How does Aetrix verify that DMN60H080DS-13 is sourced from the original manufacturer or authorized distributors?
All DMN60H080DS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN60H080DS-13 meets industry standards.
7.What is the process for return or replacement of DMN60H080DS-13?
All DMN60H080DS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN60H080DS-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN60H080DS-13 part is unused and in its original packaging.
Return procedure for DMN60H080DS-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMN60H080DS-13 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
