My Inquiry
My Account
Diodes Incorporated DMN61D9UDWQ-13
- Part No.:
- DMN61D9UDWQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
DMN61D9UDWQ-13.pdf
- Description:
- MOSFET 2N-CH 60V 0.318A SOT363
- Quantity:
- Payment:
- Shipping:
Inventory:2,778
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DMN61D9UDWQ-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET qualified to AEC-Q101 for automotive use, featuring 60 V VDSS, 1.4 Ω typical RDS(ON) at VGS = 5 V, 318 mA continuous drain current, and SOT363 ultra-small surface-mount package - deployed in motor control and power management circuits within body electronics modules.
For engineers reviewing the DMN61D9UDWQ-13 datasheet, DMN61D9UDWQ-13 pinout, DMN61D9UDWQ-13 application, or DMN61D9UDWQ-13 equivalent, key selection criteria include low gate threshold (0.5–1.0 V), low input capacitance (39 pF Ciss), fast switching (5.2 ns tD(ON)), ESD protection, and AEC-Q101 qualification with PPAP support.
Technical Context
This dual MOSFET integrates two matched N-channel devices in a single SOT363 package, each with independent gate, source, and drain terminals and integrated gate protection diodes. Its low 1.8 V gate threshold enables direct drive from 1.8 V/2.5 V logic in automotive microcontrollers.
The device delivers stable RDS(ON) across -55°C to +150°C junction temperature, with normalized on-resistance variation ≤2.2× over that range at VGS = 5 V. Dynamic parameters - including 0.6 nC total gate charge and 9.5 pF Crss - support efficient PWM operation in low-power DC-DC and load-switching topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - supports 48 V automotive bus transients and 24 V system designs with margin. |
| RDS(ON) @ VGS = 5 V | 1.4 Ω typ - enables <100 mW conduction loss at 300 mA, suitable for low-duty-cycle load switching. |
| VGS(TH) | 0.5–1.0 V - ensures reliable turn-on with 1.8 V I/O rails, eliminating need for level shifters. |
| Ciss | 39 pF - reduces gate drive power and improves switching efficiency in high-frequency (>1 MHz) control loops. |
| tD(ON) | 5.2 ns - minimizes dead-time losses in half-bridge configurations used in small BLDC drivers. |
| Qg | 0.6 nC - allows full switching with <1 µJ gate energy, compatible with low-current GPIO drivers. |
| TJ Range | -55°C to +150°C - meets under-hood temperature requirements for engine control and HVAC actuators. |
Pinout & Package
SOT363 is a 6-pin ultra-small surface-mount package (2.15 mm × 2.10 mm × 0.95 mm) with gull-wing leads, moisture sensitivity level 1, and matte tin finish on Alloy 42 leadframe - optimized for automated placement and reflow in space-constrained automotive PCBs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| S1 | Source of Q1 | Low-side return path for first MOSFET; internally connected to substrate ground reference in dual-die layout. |
| D1 | Drain of Q1 | High-side switching node for Q1; electrically isolated from D2 to enable independent channel control. |
| G1 | Gate of Q1 | Control input for Q1 with integrated ESD protection diode to S1 and D1 - prevents latch-up during hot-plug events. |
| S2 | Source of Q2 | Independent return path for second MOSFET; not tied to S1 - supports floating-source or high-side configurations. |
| D2 | Drain of Q2 | Second high-side switching node; enables dual-load control without shared drain routing. |
| G2 | Gate of Q2 | Separate control input for Q2; identical ESD protection structure as G1 - ensures matched gate drive behavior. |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent N-channel topology | Enables compact dual-load switching (e.g., H-bridge half-leg or redundant power paths) without external isolation components. |
| AEC-Q101 qualification & PPAP support | Validated for automotive production use with documented change control, IATF 16949 manufacturing, and zero-defect reliability testing. |
| Ultra-low VGS(TH) (0.5–1.0 V) | Eliminates need for gate driver ICs when interfacing with 1.8 V/2.5 V MCUs - reduces BOM count and board area. |
| ESD protection on all gates | Withstands ≥2 kV HBM per ANSI/ESDA/JEDEC JS-001 - protects against assembly handling and in-system electrostatic discharge. |
| Halogen- and antimony-free "Green" construction | Meets automotive environmental compliance (Br+Cl <1500 ppm, Sb <1000 ppm) without compromising thermal or electrical performance. |
Applications
| Body Control Module Load Switching | Automotive HVAC Blower Control |
|---|---|
|
Use Scenario: Driving resistive and inductive loads (e.g., door locks, mirror heaters, LED strips) in BCMs where space and thermal budget are constrained. IC Role / Device Role / Timing Role: Dual low-side switch providing independent ON/OFF control of two 24 V loads with minimal PCB footprint. Use Value: 1.4 Ω RDS(ON) limits power dissipation to <140 mW per channel at 200 mA, enabling operation without heatsinking in sealed enclosures. |
Use Scenario: Controlling brushed DC blower motors in climate control systems requiring bidirectional speed regulation via PWM. IC Role / Device Role / Timing Role: One MOSFET acts as low-side PWM switch; the second provides freewheeling path or auxiliary load control. Use Value: 5.2 ns turn-on delay and 19 ns fall time support >100 kHz PWM frequencies - reducing audible noise and improving airflow resolution. |
| Engine Management Auxiliary Drivers | ADAS Camera Power Sequencing |
|
Use Scenario: Supplying regulated 5 V or 3.3 V power to sensors and actuators in engine compartments exposed to wide temperature swings. IC Role / Device Role / Timing Role: Dual-channel load switch enabling controlled power-up/power-down sequencing of downstream LDOs or regulators. Use Value: -55°C to +150°C operating range and <2.2× RDS(ON) variation ensure consistent timing margins across ambient extremes. |
Use Scenario: Managing power domains for multi-sensor ADAS camera modules requiring independent reset and enable control. IC Role / Device Role / Timing Role: Isolated dual switch delivering clean, sequenced power to image sensor and ISP subsystems. Use Value: Low 1.0 µA gate leakage and <1 µA IDSS minimize standby current - critical for always-on vision systems meeting ISO 26262 ASIL-B quiescent power targets. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN61D8FDWQ-7 | Same SOT363 package but rated at 40 V VDSS and 2.2 Ω RDS(ON) @ 4.5 V - lower voltage headroom, higher on-resistance. | Restricted to 12 V automotive sub-systems (e.g., infotainment USB switches); unsuitable for 24/48 V body electronics. | Select only if system max VDS remains below 32 V and thermal margin permits higher conduction loss. |
| NTJD4152PT1G | 40 V VDSS, 2.8 Ω RDS(ON) @ 4.5 V, no AEC-Q101 qualification - lacks PPAP documentation and automotive reliability validation. | Acceptable for industrial or consumer-grade dual-switch applications but not for production automotive ECUs. | Use only in non-safety-critical, non-automotive designs where qualification traceability is not required. |
Compared with DMN61D9UDWQ-13, DMN61D8FDWQ-7 trades voltage rating and on-resistance for cost in lower-voltage roles, while NTJD4152PT1G omits automotive qualification entirely - making DMN61D9UDWQ-13 the sole option meeting AEC-Q101, 60 V, and sub-2 Ω RDS(ON) simultaneously.
Availability
DMN61D9UDWQ-13 is available at Aetrix Electronics and suitable for automotive body electronics, HVAC actuator control, and ADAS power sequencing requiring stable component supply, long-term lifecycle assurance, and AEC-Q101-compliant traceability.
Supply support for DMN61D9UDWQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets - with IATF 16949-certified facilities and broad AEC-Q101 product coverage.
The DMN61D9UDWQ belongs to Diodes' automotive-qualified small-signal MOSFET product line, engineered specifically for space-constrained, thermally demanding load-switching applications in vehicle body and chassis systems.
FAQ
Is DMN61D9UDWQ-13 pin-compatible with other SOT363 dual MOSFETs?
No - pinout differs across manufacturers. DMN61D9UDWQ-13 uses S1/D1/G1/S2/D2/G2 ordering (top view), whereas alternatives like NTJD4152PT1G assign pins as G1/D1/S1/G2/D2/S2. Physical substitution requires PCB redesign and layout verification to avoid misconnection.
What is the maximum safe operating frequency for PWM switching with DMN61D9UDWQ-13?
Based on 5.2 ns turn-on delay, 19 ns fall time, and 0.6 nC gate charge, the device supports clean switching up to 2 MHz in low-current (<300 mA), low-VDS (<20 V) conditions. At 60 V and full current, practical limit is ~500 kHz due to SOA constraints and thermal rise.
Does DMN61D9UDWQ-13 require external gate resistors for automotive EMI compliance?
Yes - although internal gate resistance is 238 Ω, external series gate resistors (typically 10–47 Ω) are recommended to dampen ringing, reduce dv/dt-induced crosstalk, and meet CISPR 25 Class 5 radiated emissions limits in 12/24 V vehicle networks.
Can DMN61D9UDWQ-13 be used in high-side switching configurations?
Yes - both channels support high-side operation when driven with appropriate gate bias (e.g., bootstrap or charge-pump circuit). The independent S1/S2 terminals allow floating-source implementation, but gate drive must exceed VDS by ≥1.5 V to maintain saturation under load.
DMN61D9UDWQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 318mA (Ta)
- Rds On (Max) @ Id, Vgs:
- 2Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 39pF @ 30V
- Power - Max:
- 370mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-363
DMN61D9UDWQ-13 FAQ
1.How can I place an order for DMN61D9UDWQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN61D9UDWQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN61D9UDWQ-13 reliable?
The price and inventory of DMN61D9UDWQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN61D9UDWQ-13 is usually 5 days.
3.What payment methods are accepted for DMN61D9UDWQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN61D9UDWQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN61D9UDWQ-13?
DMN61D9UDWQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN61D9UDWQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN61D9UDWQ-13?
For technical support, including DMN61D9UDWQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN61D9UDWQ-13 requirements.
6.How does Aetrix verify that DMN61D9UDWQ-13 is sourced from the original manufacturer or authorized distributors?
All DMN61D9UDWQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN61D9UDWQ-13 meets industry standards.
7.What is the process for return or replacement of DMN61D9UDWQ-13?
All DMN61D9UDWQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN61D9UDWQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN61D9UDWQ-13 part is unused and in its original packaging.
Return procedure for DMN61D9UDWQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMN61D9UDWQ-13 Tags
-
SSM6N7002KFU,LF
Toshiba Semiconductor and Storage
-
2N7002DW-7-F
Diodes Incorporated
-
SSM6L56FE,LM
Toshiba Semiconductor and Storage
-
SSM6N37FU,LF
Toshiba Semiconductor and Storage
-
2N7002DWH6327XTSA1
Infineon Technologies
-
2N7002BKS,115
Nexperia USA Inc.
-
DMG1016UDW-7
Diodes Incorporated
-
UM6K33NTN
Rohm Semiconductor
-
DMG6602SVT-7
Diodes Incorporated
-
EM6K34T2CR
Rohm Semiconductor
-
UM6K34NTCN
Rohm Semiconductor
-
DMG6601LVT-7
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
