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Diodes Incorporated DMN61D9UWQ-7

Part No.:
DMN61D9UWQ-7
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
SC-70, SOT-323
Datasheet:
AetrixDMN61D9UWQ-7.pdf
Description:
MOSFET N-CH 60V 400MA SOT323
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,763

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Product details

Overview

DMN61D9UWQ-7 from Diodes Incorporated is an N-channel enhancement-mode MOSFET rated for 60V VDSS, with RDS(ON) = 1.6Ω @ VGS = 5.0V and 2.5Ω @ VGS = 2.5V, delivering 340mA continuous drain current at +25°C. It serves as a low-voltage, low-power switching device in space-constrained automotive and portable power management circuits.

For engineers reviewing the DMN61D9UWQ-7 datasheet, DMN61D9UWQ-7 pinout, DMN61D9UWQ-7 application, or DMN61D9UWQ-7 equivalent, key selection criteria include its AEC-Q101 qualification, SOT323 package footprint, 2kV ESD protection, and gate threshold voltage range of 0.5–1.0V - all critical for robust low-side switching in motor control and backlighting.

Technical Context

This MOSFET employs planar silicon process technology optimized for low RDS(ON) while maintaining fast switching (tD(ON) = 2.1ns, tF = 8.4ns) and low input capacitance (Ciss = 28.5pF). Its gate threshold voltage (0.5–1.0V) enables direct drive from 1.8V/2.5V logic without level shifting.

The integrated body diode supports bidirectional current flow in H-bridge configurations, and thermal resistance RθJA = 289°C/W (t<5s, high-copper PCB) ensures stable operation under pulsed loads up to 1.2A. The device is fully qualified per AEC-Q101 and manufactured in IATF 16949 facilities.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 60V - Withstands up to 60V drain-source blocking voltage, suitable for 24V automotive and 3.3V/5V logic-level systems with margin.
RDS(ON) 1.6Ω @ VGS = 5V - Enables <100mW conduction loss at 340mA, critical for thermally constrained SOT323 layouts.
ID (continuous) 340mA @ TA = +25°C - Supports low-power load switching in battery-powered sensors and LED drivers.
Qg 0.4nC - Low gate charge minimizes driver power and enables efficient PWM operation above 1MHz.
Ciss 28.5pF - Reduces Miller effect and improves noise immunity in high-frequency switching nodes.
VGS(TH) 0.5–1.0V - Ensures reliable turn-on with 1.8V microcontroller GPIO, eliminating need for external gate drivers.
ESD Rating 2kV HBM - Integrated protection reduces external TVS requirements in compact consumer and automotive modules.

Pinout & Package

Package: SOT323 - ultra-small surface-mount plastic package (2.15 × 2.10 × 0.95 mm), lead-free, halogen-free, moisture sensitivity level 1 (J-STD-020).

Pin/Terminal Circuit Role Design Meaning
1 (Source) Current return path for channel conduction Connected to ground or low-side reference; ties directly to PCB ground plane for thermal and EMI control.
2 (Gate) Control electrode for channel formation High-impedance input requiring minimal drive current; sensitive to ESD but protected to 2kV HBM.
3 (Drain) Current output terminal of the MOSFET channel Connects to load or higher potential node; exposed pad not present - thermal path relies on trace copper area.

Key Features

Feature Design Value
Low RDS(ON) at 2.5V drive 2.5Ω enables use with 2.5V logic without gate boosting, reducing BOM count in portable designs.
Fast switching speed tF = 8.4ns and tD(OFF) = 14.4ns support >500kHz PWM in backlight dimming and motor commutation.
AEC-Q101 qualification Validated for automotive temperature range (−55°C to +150°C) and reliability stress tests including HTGB and TC.
Integrated ESD protection 2kV HBM rating eliminates need for discrete ESD diodes in cost-sensitive infotainment and body control modules.
Green packaging Halogen- and antimony-free molding compound (<900ppm Br/Cl, <1000ppm Sb) meets automotive OEM environmental mandates.

Applications

Automotive Interior Lighting Portable Sensor Power Switching

Use Scenario: Driving white LEDs in dashboard backlighting with PWM dimming at 1–10kHz.

IC Role / Device Role / Timing Role: Low-side switch controlling LED current path; gate driven by MCU PWM output.

Use Value: 1.6Ω RDS(ON) limits conduction loss to <180mW at 340mA, enabling thermal stability on 2-layer FR-4 without heatsinking.

Use Scenario: Enabling/disabling power to MEMS accelerometers or environmental sensors in wearables.

IC Role / Device Role / Timing Role: Load switch isolating sensor supply rail during sleep mode to reduce system quiescent current.

Use Value: 1.0V VGS(TH) max ensures full turn-on from 1.8V I/O, achieving <1µA off-state leakage and sub-100ns enable timing.

Small DC Motor Control USB-C Port Power Path Management

Use Scenario: Bidirectional control of 5V/100mA brushed motors in automotive HVAC actuators.

IC Role / Device Role / Timing Role: Half-bridge low-side switch paired with complementary high-side device; body diode handles flyback energy.

Use Value: 0.75V VSD forward drop and 0.4nC Qg minimize switching losses during 20kHz commutation, extending battery life.

Use Scenario: Controlling VBUS power delivery path in USB-C accessories with overcurrent detection interface.

IC Role / Device Role / Timing Role: Reverse-polarity and overcurrent protection switch placed between source and load side of USB PD controller.

Use Value: 60V VDSS withstands USB-C transient surges (±20V), while 2.5Ω RDS(ON) at 2.5V gate drive supports direct connection to PD controller GPIO.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN61D8UWQ-7 RDS(ON) = 1.2Ω @ 5V (lower), but VGS(TH) = 0.6–1.2V (wider spread); same SOT323 package and AEC-Q101 rating. Better conduction efficiency at 5V drive, but less predictable turn-on with 1.8V logic due to higher VGS(TH) ceiling. Select when driving from 3.3V/5V sources and thermal margin is critical; avoid for 1.8V-only systems.
NX7002AKW,115 RDS(ON) = 3.5Ω @ 5V (higher), no AEC-Q101 qualification, lower ESD rating (1.5kV), same SOT323 footprint. Cost-optimized for industrial/commercial use only; unsuitable for automotive PPAP or extended temperature operation. Acceptable for non-automotive prototypes or cost-sensitive consumer products where qualification is not required.

Compared with DMN61D9UWQ-7, DMN61D8UWQ-7 offers lower on-resistance for improved efficiency at 5V drive but sacrifices 1.8V compatibility, while NX7002AKW,115 provides footprint compatibility at lower cost but lacks automotive qualification and thermal robustness.

Availability

DMN61D9UWQ-7 is available at Aetrix Electronics and suitable for automotive interior lighting, portable sensor power switching, and small DC motor control requiring stable component supply across production lifecycles.

Supply support for DMN61D9UWQ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and consumer markets.

The DMN61D9UWQ-7 belongs to Diodes' AEC-Q101-qualified small-signal MOSFET product line, engineered for low-voltage, low-power switching in space- and thermal-constrained automotive subsystems.

FAQ

Is DMN61D9UWQ-7 suitable for 1.8V logic-level drive?

Yes. Its gate threshold voltage is specified from 0.5V to 1.0V, ensuring full enhancement with 1.8V gate drive. At VGS = 1.8V and ID = 50mA, RDS(ON) is typically 3.5Ω - sufficient for low-duty-cycle or low-current switching in portable devices.

What is the maximum pulsed drain current rating?

The pulsed drain current (IDM) is rated at 1.2A for 10µs pulses with 1% duty cycle. This rating assumes proper PCB layout (1"×1" 2oz copper) and accounts for thermal limitations during short transients in motor startup or LED surge conditions.

Does DMN61D9UWQ-7 have a built-in body diode?

Yes. It features an integrated parasitic body diode with forward voltage VSD = 0.75V (typical) at IS = 115mA. This diode supports freewheeling current in inductive loads and enables half-bridge operation when paired with a complementary high-side switch.

How does the SOT323 package affect thermal performance?

In the SOT323 package, thermal resistance RθJA is 289°C/W (t<5s, high-copper PCB). This requires careful attention to copper pour area under the drain pad and adjacent traces. Derating is necessary above +70°C ambient to maintain TJ ≤ +150°C.

DMN61D9UWQ-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
SC-70, SOT-323
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 5V
Rds On (Max) @ Id, Vgs:
2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
0.4 nC @ 4.5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
28.5 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
440mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-323

DMN61D9UWQ-7 FAQ

1.How can I place an order for DMN61D9UWQ-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN61D9UWQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN61D9UWQ-7 reliable?

The price and inventory of DMN61D9UWQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN61D9UWQ-7 is usually 5 days.

3.What payment methods are accepted for DMN61D9UWQ-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN61D9UWQ-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN61D9UWQ-7?

DMN61D9UWQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN61D9UWQ-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN61D9UWQ-7?

For technical support, including DMN61D9UWQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN61D9UWQ-7 requirements.

6.How does Aetrix verify that DMN61D9UWQ-7 is sourced from the original manufacturer or authorized distributors?

All DMN61D9UWQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN61D9UWQ-7 meets industry standards.

7.What is the process for return or replacement of DMN61D9UWQ-7?

All DMN61D9UWQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN61D9UWQ-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN61D9UWQ-7 part is unused and in its original packaging.

Return procedure for DMN61D9UWQ-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN61D9UWQ-7 Tags

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