My Inquiry
My Account
Diodes Incorporated DMN62D0LFB-7B
- Part No.:
- DMN62D0LFB-7B
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 3-UFDFN
- Datasheet:
-
DMN62D0LFB-7B.pdf
- Description:
- MOSFET N-CH 60V 100MA 3-DFN
- Quantity:
- Payment:
- Shipping:
Inventory:9,860
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DMN62D0LFB-7B from Diodes Incorporated is an N-channel enhancement-mode MOSFET in a 1.0 mm × 0.6 mm X1-DFN1006-3 package, rated for 60 V VDSS, 2 Ω RDS(ON) @ VGS = 4 V, 320 mA continuous drain current at +25°C, and optimized for low-power switching in battery-operated systems and solid-state relays.
For engineers reviewing the DMN62D0LFB-7B datasheet, DMN62D0LFB-7B pinout, DMN62D0LFB-7B application, or DMN62D0LFB-7B equivalent, key selection criteria include its 1.3 Ω typical RDS(ON) at 4 V gate drive, 32 pF Ciss, ESD protection, and thermal resistance of 258 °C/W - critical for space-constrained DC-DC converters and load-switching circuits.
Technical Context
This MOSFET employs a planar silicon process to achieve low on-resistance while maintaining fast switching (tD(ON) = 3.4 ns typ, tF = 16.3 ns typ) and low input capacitance. Its gate threshold voltage (VGS(TH) = 0.6–1.0 V) enables reliable turn-on with low-voltage microcontroller I/O.
The integrated body diode has VSD = 0.9 V typ at 115 mA, and the device features NiPdAu-plated terminals for robust solderability. It is qualified per J-STD-020 Level 1 moisture sensitivity and operates across –55°C to +150°C junction temperature range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - supports input rails up to 48 V nominal without derating in industrial or telecom power stages |
| RDS(ON) @ VGS = 4 V | 1.3 Ω typ / 2 Ω max - enables <100 mW conduction loss at 320 mA, suitable for always-on bias rails |
| ID Continuous @ +25°C | 320 mA - sufficient for driving small solenoids, LED strings, or logic-level relay coils |
| Ciss | 32 pF typ - reduces gate drive power and improves switching efficiency in high-frequency PWM control |
| PD @ FR-4 PCB | 0.5 W - defines maximum steady-state power dissipation with standard single-layer copper pad layout |
| RθJA | 258 °C/W - indicates thermal performance limitation in compact layouts without thermal vias or heatsinking |
| VGS(TH) | 0.6–1.0 V - ensures compatibility with 1.8 V and 3.3 V GPIOs without level-shifting circuitry |
Pinout & Package
Package: X1-DFN1006-3 (1.0 mm × 0.6 mm × 0.5 mm), bottom-exposed drain pad, RoHS-compliant green molding compound (UL 94V-0), NiPdAu-plated terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Source terminal (S) | Reference node for gate drive; connects to ground or low-side return path in load-switch configurations |
| 2 (Gate) | Control terminal (G) | High-impedance input requiring minimal drive current; sensitive to ESD but protected by internal diode |
| 3 (Drain) | Power output terminal (D) | Exposed metal pad on bottom surface - must be soldered to PCB copper pour for thermal and electrical conduction |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at low VGS | 1.5 Ω max @ VGS = 2.5 V - enables direct drive from Li-ion battery (2.8–4.2 V) without gate boost |
| ESD protection | HBM ±2 kV - eliminates need for external TVS in handheld or portable designs with exposed connectors |
| Low Ciss and Qg | 32 pF Ciss, 0.45 nC Qg - minimizes switching losses and gate driver loading in 1–5 MHz DC-DC controllers |
| Green packaging | Halogen- and antimony-free, lead-free, RoHS 3 compliant - meets IPC-1752A reporting and automotive Tier-1 sustainability requirements |
| Moisture sensitivity | J-STD-020 Level 1 - allows indefinite floor life without dry-pack or baking prior to reflow |
Applications
| Portable Power Switching | Low-Voltage Load Control |
|---|---|
|
Use Scenario: Enabling/disabling power to Bluetooth modules, sensors, or display backlights in wearables and IoT edge nodes. IC Role / Device Role: Low-side load switch managing 1.8–3.6 V rail sequencing and standby current isolation. Use Value: 2.5 Ω RDS(ON) @ 2.5 V gate drive ensures <200 µA quiescent leakage and <1 mW dropout loss at 200 mA load. |
Use Scenario: Driving piezoelectric buzzers, small solenoids, or indicator LEDs in medical diagnostic handhelds. IC Role / Device Role: Discrete power switch replacing mechanical relays to reduce size, acoustic noise, and contact wear. Use Value: Fast 10 ns rise/fall times and 1 A pulsed rating support burst-mode actuation without thermal stress. |
| DC-DC Converter Synchronous Rectification | Battery Protection Circuitry |
|
Use Scenario: Secondary-side synchronous rectifier in isolated 5 V/1 A flyback converters for USB-C accessories. IC Role / Device Role: Low-loss freewheeling path replacing Schottky diode to improve efficiency above 85% at light loads. Use Value: 0.9 V VSD body diode forward drop and 1.3 Ω RDS(ON) cut conduction loss by >40% vs. 0.3 V Schottky at 100 mA. |
Use Scenario: Over-discharge cutoff switch in single-cell Li-ion packs for power tools and cordless vacuums. IC Role / Device Role: Reverse-polarity and deep-discharge protection element controlled by fuel-gauge IC or analog comparator. Use Value: 60 V VDSS headroom accommodates transient spikes during motor commutation or charger hot-plug events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel low-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN62D0UFB-7B | Same die, 0.8 mm × 0.6 mm X1-DFN0806-3 package - 20% smaller footprint, higher RθJA (300 °C/W) | Preferred where board area is constrained but thermal margin exists; not recommended for >200 mA continuous use | Select when minimizing PCB real estate outweighs thermal derating needs |
| AO3400A | Higher RDS(ON) (2.7 Ω @ 2.5 V), larger SOT-23 package, no ESD protection | Suitable for cost-sensitive consumer electronics where gate drive voltage ≥4.5 V and ESD risk is low | Choose only if gate voltage is guaranteed ≥4.5 V and system-level ESD protection is already implemented |
Compared with DMN62D0LFB-7B, DMN62D0UFB-7B trades thermal performance for miniaturization, while AO3400A sacrifices ESD robustness and low-VGS performance for legacy compatibility and lower unit cost - making DMN62D0LFB-7B optimal for new designs prioritizing reliability at 2.5–4 V drive.
Availability
DMN62D0LFB-7B is available at Aetrix Electronics and suitable for portable power switching, low-voltage load control, and DC-DC converter synchronous rectification requiring stable component supply, long-term lifecycle assurance, and traceable green sourcing.
Supply support for DMN62D0LFB-7B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.
This MOSFET belongs to Diodes' "X1-DFN" ultra-miniature power transistor family, engineered specifically for space-constrained, battery-powered applications demanding low gate-threshold operation, high reliability, and full environmental compliance.
FAQ
What is the maximum safe operating junction temperature for DMN62D0LFB-7B?
The absolute maximum junction temperature is +150°C, and the device is characterized across –55°C to +150°C. At ambient +70°C with 320 mA continuous current and standard FR-4 layout, junction temperature reaches ~115°C - staying within safe margin. Derating is required above +70°C ambient or with increased current.
Does DMN62D0LFB-7B require external gate resistors for ESD or switching stability?
No external gate resistor is needed for ESD protection - the device integrates internal gate protection diodes rated to ±2 kV HBM. For switching, a 10–22 Ω series gate resistor is recommended to damp ringing caused by trace inductance and minimize EMI, especially in high-frequency DC-DC applications.
Can DMN62D0LFB-7B be used in reverse polarity protection circuits?
Yes - configured as a high-side switch with gate driven above source potential (e.g., using charge pump or dedicated high-side driver), it provides low-loss reverse polarity protection. Its 60 V VDSS and 2.5 Ω RDS(ON) @ 2.5 V make it viable for 12 V automotive accessory inputs or 24 V industrial ports.
Is the drain pad electrically isolated from the source and gate terminals?
No - the exposed drain pad (Pin 3) is electrically connected to the MOSFET's drain terminal and must be routed to the high-side power net. It is not isolated; connecting it to ground or source will cause catastrophic short-circuit failure. Thermal vias beneath the pad must connect only to drain-copper pours.
DMN62D0LFB-7B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 3-UFDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 100mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.5V, 4V
- Rds On (Max) @ Id, Vgs:
- 2Ohm @ 100mA, 4V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.45 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 32 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 470mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- X1-DFN1006-3
DMN62D0LFB-7B FAQ
1.How can I place an order for DMN62D0LFB-7B through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN62D0LFB-7B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN62D0LFB-7B reliable?
The price and inventory of DMN62D0LFB-7B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN62D0LFB-7B is usually 5 days.
3.What payment methods are accepted for DMN62D0LFB-7B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN62D0LFB-7B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN62D0LFB-7B?
DMN62D0LFB-7B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN62D0LFB-7B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN62D0LFB-7B?
For technical support, including DMN62D0LFB-7B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN62D0LFB-7B requirements.
6.How does Aetrix verify that DMN62D0LFB-7B is sourced from the original manufacturer or authorized distributors?
All DMN62D0LFB-7B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN62D0LFB-7B meets industry standards.
7.What is the process for return or replacement of DMN62D0LFB-7B?
All DMN62D0LFB-7B units undergo pre-shipment inspection (PSI). If there is an issue with DMN62D0LFB-7B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN62D0LFB-7B part is unused and in its original packaging.
Return procedure for DMN62D0LFB-7B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMN62D0LFB-7B Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
