Diodes Incorporated DMN62D0UDW-13
- Part No.:
- DMN62D0UDW-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
DMN62D0UDW-13.pdf
- Description:
- MOSFET 2N-CH 60V 0.35A SOT363
- Quantity:
- Payment:

- Shipping:

Inventory:7,805
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Product details
Overview
DMN62D0UDW-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT363 package, rated for 60V VDSS, 2.0Ω RDS(on) @ VGS = 4.5V, and 350mA continuous drain current at +25°C. It integrates ESD-protected gates, low 0.5nC total gate charge, and fast switching (tF = 12.5ns), enabling compact, high-efficiency power management in space-constrained DC-DC converters and motor drivers.
For engineers reviewing the DMN62D0UDW-13 datasheet, DMN62D0UDW-13 pinout, DMN62D0UDW-13 application, or DMN62D0UDW-13 equivalent, key selection criteria include its dual-N-channel topology, 1.0V gate threshold voltage, ultra-low input capacitance (32pF Ciss), thermal resistance of 400°C/W on FR-4, and automotive-qualified variant (DMN62D0UDWQ) for AEC-Q101-compliant designs.
Technical Context
This dual MOSFET integrates two independent N-channel devices sharing no internal connection-each with separate gate, source, and drain terminals. Its low 0.5–1.0V VGS(th) enables direct drive from 1.8V/2.5V logic, while 32pF Ciss and 2.4pF Crss support high-frequency switching up to several MHz without excessive driver loss.
The device operates across –55°C to +150°C junction temperature, with RDS(on) increasing only 1.4× from 25°C to 125°C at VGS = 4.5V. Its 320mW power dissipation rating on standard FR-4 and 0.006g mass suit ultra-thin portable electronics where thermal mass and board area are tightly constrained.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60V - supports 24V industrial bus and 48V PoE-powered systems with 2× safety margin |
| RDS(on) | 2.0Ω @ VGS = 4.5V - delivers ≤70mW conduction loss at 350mA, critical for battery runtime |
| Qg | 0.5nC - reduces gate drive power and allows use of low-current GPIOs or microcontroller pins |
| Ciss | 32pF - minimizes Miller effect, enabling clean 10MHz+ PWM edge integrity in Class-D audio |
| tF | 12.5ns - ensures <1% dead-time loss in synchronous buck converters operating at 2MHz |
| TJ Range | –55°C to +150°C - qualified for under-hood automotive modules and industrial PLC I/O stages |
| PD | 320mW on FR-4 - fits thermally unmanaged wearable sensors without heatsinking or airflow |
Pinout & Package
SOT363 (Standard) surface-mount package: 6-pin, 2.0mm × 2.225mm footprint, 0.9mm height, matte tin-plated alloy-42 leadframe, UL 94V-0 molding compound, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| S1 | Source of Q1 | Low-impedance return path for first MOSFET; tied to ground or low-side switch node |
| D1 | Drain of Q1 | High-side switching node for Q1; connects to load or inductor in half-bridge configuration |
| G1 | Gate of Q1 | Control input for Q1; requires <1.0V threshold to turn on with 1.8V logic |
| S2 | Source of Q2 | Independent return path for second MOSFET; enables dual-load isolation or H-bridge leg |
| D2 | Drain of Q2 | Second high-side node; supports independent load control without shared drain routing |
| G2 | Gate of Q2 | Separate control input; allows asynchronous or complementary drive of Q2 vs. Q1 |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent N-channel topology | Enables compact H-bridge motor control or dual-path load switching without external isolation components |
| ESD-protected gate structure | Withstands >2kV HBM per JEDEC JESD22-A114, eliminating need for external TVS on gate traces |
| Low 0.5nC total gate charge | Reduces switching energy loss by 60% vs. comparable 1.2Ω SOT23-6 MOSFETs, extending battery life |
| Ultra-small SOT363 footprint | 0.006g mass and 2.0mm × 2.225mm area fit within 3×3mm PCB real estate constraints in TWS earbuds |
| Lead-free, halogen-free "Green" construction | Meets IPC-J-STD-609A Class 3 definition (<900ppm Br+Cl, <1000ppm Sb), compliant with EU RoHS 3 |
Applications
| Brushless DC Motor Driver | USB-C Power Delivery Switch |
|---|---|
|
Use Scenario: Half-bridge gate driver stage for 5V–24V BLDC fans in network switches and NAS enclosures. IC Role / Device Role / Timing Role: Low-side and high-side synchronous switch pair controlling phase current commutation. Use Value: 2.5Ω RDS(on) @ VGS = 2.5V enables direct MCU GPIO drive, eliminating level-shifters and reducing BOM count by 2 components. |
Use Scenario: Dual-path load switch managing VBUS and CC line power routing in USB-C receptacles. IC Role / Device Role / Timing Role: Independent N-channel switches isolating 5V/9V/15V/20V power rails during PD negotiation. Use Value: 60V VDSS withstands 20V PD transients; 0.5nC Qg ensures <10µs turn-on for fast port role swap compliance. |
| Portable Medical Sensor Node | Industrial IO-Link Interface |
|
Use Scenario: Power gating for low-power biosensor analog front-end and BLE radio subsystems. IC Role / Device Role / Timing Role: Dual enable switch controlling 1.8V sensor bias and 3.3V RF supply domains. Use Value: 1.0V VGS(th) allows wake-up from deep-sleep using 1.2V LDO output, cutting quiescent current to <100nA. |
Use Scenario: Digital output stage for IO-Link master port driving 24V actuators with short-circuit protection. IC Role / Device Role / Timing Role: High-side switch with integrated body diode for reverse-polarity and inductive kickback handling. Use Value: 350mA ID max and 0.8V VSD body diode forward drop limit voltage overshoot to <2.5V during 100mA inductive turn-off. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN62D0UDWQ | Automotive-qualified AEC-Q101, same electrical specs, tighter PPAP-controlled traceability | Required for under-hood ECUs, ADAS cameras, and infotainment power rails | Select when ISO/TS 16949 manufacturing and change control are mandated |
| DMN2053UVT | Single N-channel, 20V VDSS, 0.12Ω RDS(on), SOT-563 package, higher current (2.8A) | Not pin-compatible; suited for single high-current loads, not dual-switch topologies | Choose only if design requires >350mA per channel and can accept larger footprint and different pinout |
Compared with DMN62D0UDW-13, the DMN62D0UDWQ adds automotive qualification without altering performance, while the DMN2053UVT trades dual functionality for higher single-channel current and lower RDS(on)-making it unsuitable for space-constrained dual-load isolation but viable for high-current single-switch applications.
Availability
DMN62D0UDW-13 is available at Aetrix Electronics and suitable for USB-C power delivery modules, portable medical sensor nodes, brushless DC motor drivers, and industrial IO-Link interfaces requiring stable component supply across long production lifecycles.
Supply support for DMN62D0UDW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal ICs for power management, signal integrity, and connectivity applications.
DMN62D0UDW belongs to Diodes' high-density small-signal MOSFET product line, engineered for ultra-compact power switching in battery-powered and thermally constrained systems where dual-channel integration reduces PCB area and interconnect losses.
FAQ
What is the maximum continuous drain current for each channel at +70°C ambient?
Each channel supports 290mA continuous drain current at TA = +70°C with VGS = 4.5V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits on the SOT363 package's 320mW power dissipation capability when mounted on standard FR-4 PCB with minimum pad layout.
Does DMN62D0UDW-13 integrate back-to-back body diodes for bidirectional blocking?
No-the device contains two independent N-channel MOSFETs, each with a standard forward-biased body diode from source to drain. There is no internal series or anti-parallel diode configuration; bidirectional blocking requires external circuitry or discrete antiparallel diodes.
Can this part be used in linear regulator pass transistor applications?
Yes-its 60V VDSS and 1.0V gate threshold allow operation as a low-dropout pass element with 1.8V–5V control inputs. However, thermal derating must be applied: at 200mA output, junction temperature rise exceeds 100°C on FR-4, requiring careful thermal design or reduced load current.
Is the SOT363 package compatible with standard reflow profiles for lead-free soldering?
Yes-the device is fully RoHS 3 compliant with matte tin finish and rated for peak reflow temperatures up to 260°C per JEDEC J-STD-020. Its moisture sensitivity level 1 eliminates bake requirements, supporting standard Pb-free reflow cycles without preconditioning.
DMN62D0UDW-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 350mA
- Rds On (Max) @ Id, Vgs:
- 2Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 32pF @ 30V
- Power - Max:
- 320mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-363
DMN62D0UDW-13 FAQ
1.How can I place an order for DMN62D0UDW-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN62D0UDW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN62D0UDW-13 reliable?
The price and inventory of DMN62D0UDW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN62D0UDW-13 is usually 5 days.
3.What payment methods are accepted for DMN62D0UDW-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN62D0UDW-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN62D0UDW-13?
DMN62D0UDW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN62D0UDW-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN62D0UDW-13?
For technical support, including DMN62D0UDW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN62D0UDW-13 requirements.
6.How does Aetrix verify that DMN62D0UDW-13 is sourced from the original manufacturer or authorized distributors?
All DMN62D0UDW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN62D0UDW-13 meets industry standards.
7.What is the process for return or replacement of DMN62D0UDW-13?
All DMN62D0UDW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN62D0UDW-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN62D0UDW-13 part is unused and in its original packaging.
Return procedure for DMN62D0UDW-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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