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Diodes Incorporated DMN62D0UDWQ-7

Part No.:
DMN62D0UDWQ-7
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
6-TSSOP, SC-88, SOT-363
Datasheet:
AetrixDMN62D0UDWQ-7.pdf
Description:
MOSFET 2N-CH 60V 0.35A SOT363
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,426

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Product details

Overview

DMN62D0UDWQ from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET qualified to AEC-Q101 for automotive use, with 60 V VDSS, 2.0 Ω RDS(ON) @ VGS = 4.5 V, 350 mA ID, and SOT363 package. It serves as a compact, low-threshold switching element in motor control and power management circuits requiring robust gate ESD protection and ultra-small footprint.

For engineers reviewing the DMN62D0UDWQ datasheet, DMN62D0UDWQ pinout, DMN62D0UDWQ application, or DMN62D0UDWQ equivalent, this page delivers verified electrical parameters, validated dual-MOSFET pin mapping, automotive-grade thermal and leakage performance, and real-world selection guidance for space-constrained, PPAP-capable designs.

Technical Context

This dual MOSFET integrates two independent N-channel devices in a single SOT363 package, each featuring a low 0.5–1.1 V gate threshold voltage enabling reliable turn-on from 2.5 V logic, and ESD-protected gates rated to ±20 V. Its 32 pF input capacitance and 0.5 nC total gate charge support fast switching (tR = 2.5 ns) with minimal drive loss.

The device operates across –55 °C to +150 °C junction temperature, with normalized RDS(ON) variation under 1.8× over that range at VGS = 4.5 V. Thermal resistance is 400 °C/W (steady-state, 1" × 1" FR-4), and maximum power dissipation is 320 mW at TA = +25 °C.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 60 V - Withstands up to 60 V drain-source voltage before breakdown, suitable for 24 V automotive rail switching.
RDS(ON) @ VGS = 4.5 V 2.0 Ω max - Ensures ≤700 mW conduction loss at 350 mA, critical for thermally constrained PCB layouts.
ID (TA = +25 °C) 350 mA - Continuous drain current rating per channel under standard ambient conditions.
VGS(TH) 0.5–1.1 V - Low threshold enables direct interface with 1.8 V/2.5 V microcontrollers without level-shifting.
Ciss 32 pF - Low input capacitance reduces gate drive power and improves high-frequency switching efficiency.
Qg 0.5 nC - Minimal total gate charge allows fast turn-on with low-current drivers (e.g., GPIO pins).
TJ Range –55 to +150 °C - Fully specified operation across automotive under-hood temperature extremes.

Pinout & Package

Package: SOT363 - ultra-small surface-mount plastic package (2.15 mm × 2.10 mm × 0.95 mm), lead-free, halogen-free, moisture sensitivity level 1, UL 94V-0 rated.

Pin/Terminal Circuit Role Design Meaning
S1 Source of Channel 1 Common source node for first MOSFET; tied internally to S2 in some configurations but electrically isolated per datasheet diagram.
G1 Gate of Channel 1 Control terminal for first MOSFET; includes integrated ESD protection diode to S1.
D1 Drain of Channel 1 High-side switching node for Channel 1; rated for 60 V and 350 mA continuous.
S2 Source of Channel 2 Independent source node for second MOSFET; not internally connected to S1 per equivalent circuit.
G2 Gate of Channel 2 Control terminal for second MOSFET; ESD-protected to its own source (S2).
D2 Drain of Channel 2 Second high-side switching node; fully independent, matched parametrically to D1.

Key Features

Feature Design Value
Dual independent N-channel topology Two fully isolated MOSFETs in one SOT363 footprint-reduces board area by ~40% vs. discrete singles.
AEC-Q101 qualification & PPAP support Validated for automotive production use with full change control, IATF 16949 manufacturing, and traceable lot data.
Low VGS(TH) and RDS(ON) Guaranteed turn-on at 2.5 V logic and <2 Ω on-resistance enable efficient battery-powered and low-voltage MCU interfacing.
ESD-protected gates Integrated gate protection diodes withstand >2 kV HBM-eliminates need for external TVS in most layout scenarios.
Ultra-low leakage IDSS ≤ 1.0 µA at 60 V and IGSS ≤ ±10 µA at ±20 V-critical for always-on automotive modules.

Applications

Automotive Door Module LED Headlamp Dimming

Use Scenario: Controlling window lift motors and mirror actuators in centralized door ECUs.

IC Role / Device Role / Timing Role: Dual low-side switch driving brushed DC motors with PWM dimming and direction reversal.

Use Value: Single SOT363 replaces two discrete MOSFETs, reducing BOM count and PCB area while maintaining AEC-Q101 compliance and thermal margin at 85 °C ambient.

Use Scenario: Pulse-width modulated current regulation for adaptive LED headlamp arrays.

IC Role / Device Role / Timing Role: High-speed, low-RDS(ON) switching element in constant-current sink configuration.

Use Value: 2.5 ns rise time and 0.5 nC Qg enable clean 1–10 kHz dimming waveforms without shoot-through risk or excessive gate drive loss.

Body Control Unit Power Rails Engine Control Sensor Biasing

Use Scenario: Selective powering of LIN transceivers, HVAC sensors, and interior lighting loads.

IC Role / Device Role / Timing Role: Load switch managing multiple 5–12 V auxiliary rails with controlled inrush and fault isolation.

Use Value: Low 1.1 V max VGS(TH) ensures full enhancement from 3.3 V MCU outputs; <1 µA IDSS prevents standby current leakage in sleep mode.

Use Scenario: Providing stable bias current to oxygen (O₂) and knock sensors in engine bay environments.

IC Role / Device Role / Timing Role: Precision current source switch operating continuously at 125 °C junction temperature.

Use Value: RDS(ON) drift <1.8× from –40 °C to +150 °C ensures consistent sensor excitation current across full automotive temperature range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN62D0UTQ-7 Same die, identical specs, but in SOT563 (smaller 1.6 × 1.6 mm) package with different pinout (G1/D1/S1/G2/D2/S2). Requires PCB redesign due to non-pin-compatible layout; better suited for ultra-dense routing where SOT363 spacing is insufficient. Select when board area is more constrained than assembly compatibility-verify thermal derating for reduced pad area.
NTJD4152PT1G Higher RDS(ON) (2.8 Ω @ 4.5 V), no AEC-Q101 qualification, wider VGS(TH) range (0.5–1.5 V), same SOT363 footprint. Limited to industrial or consumer applications; lacks PPAP documentation and automotive temperature validation. Acceptable for cost-sensitive non-automotive designs where 2.8 Ω on-resistance and absence of AEC-Q101 are acceptable trade-offs.

Compared with DMN62D0UDWQ, DMN62D0UTQ-7 offers higher density but demands layout revision, while NTJD4152PT1G sacrifices automotive qualification and on-resistance for lower unit cost-neither is drop-in compatible, and selection depends strictly on qualification requirements and thermal constraints.

Availability

DMN62D0UDWQ is available at Aetrix Electronics and suitable for automotive door modules, LED headlamp dimming systems, and body control unit power rails requiring stable component supply, AEC-Q101 traceability, and long-term lifecycle continuity.

Supply support for DMN62D0UDWQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.

The DMN62D0UDWQ belongs to Diodes' AEC-Q101-qualified small-signal MOSFET product line, engineered specifically for space-constrained, thermally demanding automotive subsystems requiring low-voltage logic compatibility and robust ESD immunity.

FAQ

Is DMN62D0UDWQ suitable for hot-swap applications?

No-DMN62D0UDWQ lacks integrated slew-rate control, current limiting, or fault reporting features required for safe hot-swap insertion. Its 60 V VDSS and 350 mA ID rating do not imply robustness against inrush currents or bus transients. For hot-swap, consider dedicated load switches like DIODES AP22802W5-7 with built-in soft-start and overcurrent protection.

Can both channels be paralleled to increase current handling?

No-channels are electrically isolated with no internal connection between sources or drains; paralleling would require precise matching of VGS(TH) and RDS(ON), which is not guaranteed. The datasheet specifies only per-channel ratings (350 mA each), and thermal coupling in SOT363 makes parallel operation unsafe without derating and external current balancing.

What is the maximum safe operating frequency for PWM switching?

Based on tR = 2.5 ns and tF = 12.5 ns, the device supports clean switching up to ~30 MHz for low-duty-cycle signals, but practical PWM use (e.g., motor control) is limited by thermal constraints: at 350 mA and 2 Ω RDS(ON), average power exceeds 320 mW above ~10 kHz with 50% duty cycle on a standard FR-4 board, requiring careful thermal design or derating.

Does the SOT363 package support reflow soldering per J-STD-020?

Yes-the SOT363 package has moisture sensitivity level 1 per J-STD-020, meaning it may be stored indefinitely at ≤30 °C/60% RH without baking. Standard lead-free reflow profiles (peak 260 °C, 20–40 sec above 217 °C) are supported, and the matte tin finish ensures reliable solder wetting per MIL-STD-202, Method 208.

DMN62D0UDWQ-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
6-TSSOP, SC-88, SOT-363
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
-
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
350mA (Ta)
Rds On (Max) @ Id, Vgs:
2Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id:
1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
0.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
32pF @ 30V
Power - Max:
320mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-363

DMN62D0UDWQ-7 FAQ

1.How can I place an order for DMN62D0UDWQ-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN62D0UDWQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN62D0UDWQ-7 reliable?

The price and inventory of DMN62D0UDWQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN62D0UDWQ-7 is usually 5 days.

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5.How can I obtain technical support or documentation for DMN62D0UDWQ-7?

For technical support, including DMN62D0UDWQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN62D0UDWQ-7 requirements.

6.How does Aetrix verify that DMN62D0UDWQ-7 is sourced from the original manufacturer or authorized distributors?

All DMN62D0UDWQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN62D0UDWQ-7 meets industry standards.

7.What is the process for return or replacement of DMN62D0UDWQ-7?

All DMN62D0UDWQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN62D0UDWQ-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN62D0UDWQ-7 part is unused and in its original packaging.

Return procedure for DMN62D0UDWQ-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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