Diodes Incorporated DMN62D0UV-13

Overview

DMN62D0UV-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT563 package, rated for 60V V_DSS, 2.0 Ω R_DS(ON) @ V_GS = 4.5 V, and 490 mA continuous drain current at T_A = +25°C. It integrates two matched low-R_DS(ON) switches with ESD-protected gates and low input capacitance (C_iss = 32 pF), enabling compact load switching in space-constrained power management circuits.

For engineers reviewing the DMN62D0UV-13 datasheet, DMN62D0UV-13 pinout, DMN62D0UV-13 application, or DMN62D0UV-13 equivalent, key selection criteria include its dual-channel SOT563 footprint, gate threshold voltage range (0.5–1.0 V), thermal resistance (R_θJA = 271 °C/W on FR-4), body diode forward voltage (0.8–1.3 V), and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This dual MOSFET integrates two independent N-channel devices sharing no internal connection-each channel features separate source, drain, and gate terminals. Its low 1.2 Ω typical R_DS(ON) @ 4.5 V and fast switching (t_D(ON) = 2.4 ns, t_F = 12.5 ns) support high-efficiency DC-DC load switching and battery protection circuits where minimal conduction loss and rapid turn-off are critical.

The device operates across –55°C to +150°C junction temperature, with gate threshold voltage stable over temperature (0.5–1.0 V at I_D = 250 µA) and normalized R_DS(ON) variation ≤1.8× from –55°C to +150°C. Its 0.006 g mass and SOT563 footprint enable ultra-thin portable electronics integration without compromising thermal derating.

Key Specifications

Pinout & Package

SOT563 is a 6-pin, surface-mount plastic package measuring 1.60 mm × 1.20 mm × 0.50 mm (L × W × H), with matte tin–annealed copper leadframe and UL 94V-0 flammability rating. Moisture sensitivity level is J-STD-020 Level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Compared with DMN62D0UV-13, the -UT-7 offers identical functionality in smaller reels, while the -UW-7 trades 20 V headroom for lower R_DS(ON) and improved thermal performance-making it preferable for 24 V industrial I/O but unsuitable for 48 V backup systems.

Availability

DMN62D0UV-13 is available at Aetrix Electronics and suitable for USB power switching, automotive LED control, portable medical sensor biasing, and industrial I/O module protection requiring stable component supply and AEC-Q101 reliability assurance.

Supply support for DMN62D0UV-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

The DMN62D0UV belongs to Diodes' AEC-Q101-qualified small-signal MOSFET product line, engineered specifically for space-constrained, thermally demanding automotive and industrial power-switching applications where dual-channel integration and low gate charge are essential.

FAQ

Is DMN62D0UV-13 pin-compatible with other SOT563 dual MOSFETs?

No-pinout is specific to this part: S1/D1/G1/S2/D2/G2 in top-view order. Competing dual MOSFETs like the DMN62D0UT-7 share identical pinout, but non-Diodes SOT563 devices may assign pins differently. Always verify against the official DS38193 Rev. 3-2 pin diagram before PCB layout.

What is the maximum safe operating voltage for DMN62D0UV-13 in continuous DC operation?

The absolute maximum drain-source voltage is 60 V per channel, but sustained operation above 48 V requires derating based on SOA curves in Figure 12. At T_A = +70°C, continuous I_D must be limited to 390 mA to maintain junction temperature ≤150°C with standard FR-4 mounting.

Does DMN62D0UV-13 support 1.8 V logic-level gate drive?

Yes-V_GS(TH) is specified 0.5–1.0 V, and R_DS(ON) = 3.0 Ω max @ V_GS = 1.8 V, I_D = 50 mA. This enables direct drive from 1.8 V microcontrollers, though conduction loss increases ~50% versus 4.5 V drive-verify thermal margin at target load current.

Can DMN62D0UV-13 be used in linear (analog) regulation mode?

No-it is optimized for switching operation only. The SOA curve (Figure 12) shows no DC or long-pulse capability above 100 mA at >10 V V_DS. Linear use risks thermal runaway due to positive R_DS(ON) temperature coefficient and insufficient Safe Operating Area at low V_GS.