Diodes Incorporated DMN62D0UW-13

Overview

DMN62D0UW-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in SOT323 package, rated for 60V V_DSS, 2.0Ω R_DS(ON) at V_GS = 4.5V, and 340mA continuous drain current at T_A = +25°C. It serves as a low-power load switch or signal-level power control device in compact DC-DC converters and LED backlight drivers.

For engineers reviewing the DMN62D0UW-13 datasheet, DMN62D0UW-13 pinout, DMN62D0UW-13 application, or DMN62D0UW-13 equivalent, key selection criteria include its 2.5Ω R_DS(ON) at 2.5V gate drive, ESD-protected gate, 320mW power dissipation on FR-4, and AEC-Q qualified automotive variant (DMN62D0UWQ) for reliability-critical designs.

Technical Context

This MOSFET uses planar silicon process to achieve low threshold voltage (0.5–1.0V) and stable R_DS(ON) across -55°C to +150°C junction temperature. Its 32pF C_iss and 2.4pF Cr_ss support fast switching with t_D(ON) = 2.4ns and t_F = 12.5ns under 10V drive.

The integrated body diode has V_SD = 0.8–1.3V at 115mA, and the device features matte tin-annealed terminals compatible with lead-free reflow. Thermal resistance R_θJA is 398°C/W (steady-state, minimum pad) and 273°C/W (high-copper layout), enabling operation up to 150°C T_J.

Key Specifications

Pinout & Package

SOT323 (Standard) surface-mount package: 1.8–2.2mm × 2.0–2.45mm footprint, 0.9mm height, 0.006g weight, JEDEC-compliant moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage MOSFET applications.

Compared with DMN62D0UW-13, the DMN62D0UWQ-13 adds automotive qualification without electrical trade-offs, while NX3008NBK offers lower on-resistance at higher current capability-both require layout verification due to differing thermal profiles and gate charge.

Availability

DMN62D0UW-13 is available at Aetrix Electronics and suitable for motor controls, LED backlighting, and low-power power management functions requiring stable component supply, RoHS/Green compliance, and SOT323 footprint compatibility.

Supply support for DMN62D0UW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.

DMN62D0UW belongs to Diodes' low-voltage logic-level MOSFET product line, engineered for space-constrained, battery-operated, and energy-efficient applications where gate drive simplicity and thermal efficiency are critical.

FAQ

Is DMN62D0UW-13 pin-compatible with other SOT323 N-channel MOSFETs?

Yes, DMN62D0UW-13 uses standard SOT323 pinout (Drain-Gate-Source, left-to-right top view), matching industry-standard layout footprints. However, R_DS(ON), gate charge, and thermal performance differ across vendors-PCB thermal relief and gate drive strength must be verified against actual electrical behavior.

What is the maximum safe operating voltage for continuous DC operation?

The absolute maximum drain-source voltage is 60V, but for reliable long-term operation, Diodes recommends limiting V_DS to ≤48V under continuous DC conditions with adequate derating for temperature and layout-induced transients per Figure 12 SOA curves.

Does DMN62D0UW-13 require external gate resistors for stability?

No external gate resistor is required for basic switching, as the device's 101Ω intrinsic gate resistance provides inherent damping. However, a 10–47Ω series resistor is recommended when driving from high-impedance sources or in noisy environments to suppress ringing and reduce EMI.

Can DMN62D0UW-13 replace a P-channel MOSFET in high-side switching?

No-it is an N-channel device and requires gate voltage above source potential to conduct. For high-side switching, it must be used with a charge pump or gate driver that elevates V_GS; a P-channel part like DMG1012T would be a direct functional alternative in simpler bias configurations.