Diodes Incorporated DMN62D1LFD-13

Overview

DMN62D1LFD-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in a U-DFN1212-3 (Type C) package, rated for 60 V V_DSS, 400 mA continuous drain current at T_A = +25°C, and R_DS(ON) of 0.8 Ω (typ) at V_GS = 4 V. It integrates gate protection diode and ESD protection, and is optimized for low-power DC-DC converters and battery-operated load switching.

For engineers reviewing the DMN62D1LFD-13 datasheet, DMN62D1LFD-13 pinout, DMN62D1LFD-13 application, or DMN62D1LFD-13 equivalent, this page delivers verified electrical parameters, validated U-DFN1212-3 terminal mapping, JEDEC-qualified reliability data, and real-world use cases in power management and solid-state relay replacement.

Technical Context

This MOSFET employs planar silicon process technology to achieve low R_DS(ON) while maintaining fast switching speed (t_D(ON) = 2.1 ns, t_F = 13.9 ns) and low input capacitance (C_iss = 36 pF). Its gate threshold voltage (V_GS(TH) = 0.6–1.0 V) enables direct drive from 1.8 V and 2.5 V logic systems.

The integrated body diode exhibits V_SD = 0.8 V (typ) at I_S = 115 mA and supports bidirectional current flow in low-duty-cycle applications. Thermal resistance R_θJA = 237 °C/W on FR-4 PCB ensures stable operation up to +150 °C junction temperature under defined pad layout.

Key Specifications

Pinout & Package

U-DFN1212-3 (Type C) surface-mount package with 0.8 mm × 1.2 mm footprint, 0.5 mm height, and NiPdAu-plated copper leadframe. Moisture sensitivity level 1 per J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with DMN62D1LFD-13, the DMN62D1LFDQ adds automotive compliance overhead without electrical benefit, while the AO3400 trades compactness and integrated protection for wider availability and lower cost-making DMN62D1LFD-13 optimal for space-constrained, high-reliability 2.5–4.5 V drive applications.

Availability

DMN62D1LFD-13 is available at Aetrix Electronics and suitable for DC-DC converters, battery protection circuits, and solid-state relay replacements requiring stable component supply, JEDEC-qualified reliability, and compact U-DFN1212-3 packaging.

Supply support for DMN62D1LFD-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in ISO/TS 16949-certified facilities.

DMN62D1LFD-13 belongs to Diodes' logic-level MOSFET product line, engineered specifically for energy-efficient, space-constrained power switching in portable and industrial electronics where low gate drive voltage and high thermal robustness are critical.

FAQ

What is the maximum safe gate-source voltage for DMN62D1LFD-13?

The absolute maximum V_GS is ±20 V per the datasheet's Maximum Ratings table. Operation beyond ±12 V is discouraged in practice due to accelerated gate oxide stress; typical drive uses 2.5–4.5 V to balance R_DS(ON) and safety margin. The integrated gate protection diode clamps negative excursions to approximately −0.7 V.

Can DMN62D1LFD-13 replace a mechanical relay in a 24 V AC solenoid circuit?

No-it is rated for DC only (V_DSS = 60 V DC, no AC rating). For 24 V AC solenoids, zero-crossing triac or back-to-back MOSFET solutions are required. However, it can replace relays in 24 V DC solenoid, lamp, or display driver circuits where unidirectional current and DC blocking are sufficient.

Is the exposed pad on the U-DFN1212-3 package electrically connected?

Yes-the exposed pad is internally bonded to the source (S) terminal and must be soldered to a PCB copper pour tied to system ground. This connection provides both electrical return path and primary thermal conduction; omitting it increases R_θJA by >100 °C/W and risks thermal runaway at rated current.

Does DMN62D1LFD-13 support reverse current flow through its body diode?

Yes-the intrinsic body diode conducts from source to drain with V_SD = 0.8 V (typ) at 115 mA. It is rated for continuous forward current up to 350 mA (I_S) at T_A = +25°C, making it suitable for freewheeling in low-duty-cycle inductive loads, but not for bidirectional power transfer or synchronous rectification without external control.