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Diodes Incorporated DMN62D1LFDQ-13
- Part No.:
- DMN62D1LFDQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 3-XDFN
- Datasheet:
-
DMN62D1LFDQ-13.pdf
- Description:
- MOSFET N-CH 60V 400MA 3DFN T&R 1
- Quantity:
- Payment:
- Shipping:
Inventory:2,580
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Product details
Overview
DMN62D1LFDQ-13 from Diodes Incorporated is an AEC-Q101 qualified N-channel enhancement-mode MOSFET in a U-DFN1212-3 (Type C) package, rated for 60 V VDSS, 2 Ω RDS(ON) @ VGS = 4 V, and 400 mA continuous drain current at +25°C - designed for automotive backlighting, power management, and DC-DC converter switching stages.
For engineers reviewing the DMN62D1LFDQ-13 datasheet, DMN62D1LFDQ-13 pinout, DMN62D1LFDQ-13 application, or DMN62D1LFDQ-13 equivalent, this page delivers verified electrical parameters, thermal behavior under pulsed operation, gate charge metrics (Qg = 0.55 nC), ESD protection status, and AEC-Q101 qualification evidence - all critical for automotive-grade reliability validation.
Technical Context
This MOSFET employs a planar trench-gate structure optimized for low RDS(ON) at low gate drive voltages (1.5–4.5 V), enabling direct interface with 3.3 V and 5 V microcontroller GPIOs. Its integrated gate protection diode and ESD rating (>2 kV HBM per JESD22-A114) support robustness in noisy automotive environments.
Thermal design is constrained by RθJA = 237 °C/W on FR-4 PCB with minimum pad layout, limiting continuous power dissipation to 0.5 W at +25°C ambient. Safe operating area (SOA) curves confirm single-pulse capability up to 1 A at 30 V with 100 µs pulse width, supporting transient load-switching requirements.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - supports 48 V automotive systems with 20 % margin against transients |
| RDS(ON) | 2 Ω @ VGS = 4 V - enables <1 V conduction drop at 500 mA, minimizing I²R losses |
| ID (cont.) | 400 mA @ TA = +25°C - defines maximum steady-state load current on standard PCB |
| Qg | 0.55 nC - determines gate driver current requirement (~1.1 mA avg. for 2 MHz switching) |
| Ciss | 36 pF - impacts high-frequency gate drive impedance and EMI filtering needs |
| TJ range | −55 to +150 °C - meets extended temperature requirements for under-hood automotive modules |
| VGS(TH) | 0.6–1.0 V - ensures turn-on compatibility with low-voltage logic and wake-up circuits |
Pinout & Package
Package: U-DFN1212-3 (Type C), 1.2 × 1.2 mm footprint, 0.5 mm height, NiPdAu-plated copper leadframe, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Drain) | Main current path output | Connected to load return or switching node; thermally coupled to exposed pad |
| Pin 2 (Source) | Reference node for gate control | Provides ground reference for VGS; ties to PCB ground plane for thermal and EMI control |
| Pin 3 (Gate) | Control input | High-impedance node requiring low-inductance routing; protected by internal Zener clamp |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 2.5 V drive | 2.5 Ω - enables use in 3.3 V logic-controlled power rails without level-shifting |
| Integrated gate protection diode | Clamps VGS to ±20 V - eliminates need for external TVS in most automotive GPIO interfaces |
| ESD protection | >2 kV HBM - satisfies IEC 61000-4-2 Level 4 for system-level ESD immunity |
| AEC-Q101 qualification | PPAP-capable, IATF 16949 manufacturing - fulfills automotive change control and traceability mandates |
| Green packaging | Halogen- and antimony-free, RoHS 3 compliant - meets EU ELV and OEM sustainability requirements |
Applications
| Automotive LED Backlighting | USB-C Power Delivery Load Switch |
|---|---|
Use Scenario: Driving white LED strings in instrument cluster or center console displays with PWM dimming. IC Role / Device Role / Timing Role: Low-side switch controlling LED cathode current; synchronized to MCU PWM at 1–20 kHz. Use Value: 0.8 Ω typical RDS(ON) at 4 V reduces conduction loss to <0.2 W at 500 mA, minimizing thermal stress on compact display PCBs. | Use Scenario: Enabling/disabling 5 V/3 A USB-C power path in infotainment head units. IC Role / Device Role / Timing Role: Load switch isolating downstream ports during hot-plug events; controlled via PMIC enable signal. Use Value: Fast tF = 13.9 ns and low Qgd = 0.12 nC minimize shoot-through risk during sequencing, supporting <10 µs response time. |
| Engine Control Unit (ECU) Sensor Bias | Automotive DC-DC Converter Synchronous Rectifier |
Use Scenario: Providing stable 5 V bias to Hall-effect crankshaft position sensors. IC Role / Device Role / Timing Role: Precision current-limited switch regulating sensor supply; operated in linear mode with feedback. Use Value: Tight VGS(TH) tolerance (0.6–1.0 V) and low IDSS (<1 µA) ensure stable quiescent current across −40 to +125 °C. | Use Scenario: Replacing Schottky diode in 12 V → 3.3 V buck converter for ADAS camera module. IC Role / Device Role / Timing Role: Synchronous rectifier driven by controller's complementary gate signal; operates at 500 kHz. Use Value: 36 pF Ciss and 0.55 nC Qg reduce switching losses by >40 % vs. discrete diode, improving efficiency from 82 % to 89 %. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel low-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN62D0LFDQ-13 | RDS(ON) = 1.2 Ω @ VGS = 4 V (lower), same package and AEC-Q101 qualification | Better conduction efficiency but higher gate charge (0.72 nC) | Select when lower I²R loss dominates over gate drive power and switching speed |
| NVMFS5C426NLT1G | RDS(ON) = 1.8 Ω @ VGS = 4.5 V, SO-8FL package, higher thermal resistance (RθJA = 62 °C/W) | Larger footprint; requires heatsinking for >200 mA continuous operation | Select only if board space allows SO-8FL and higher power dissipation must be managed externally |
Compared with DMN62D0LFDQ-13 and NVMFS5C426NLT1G, the DMN62D1LFDQ-13 balances gate drive simplicity (low Qg), compact U-DFN1212-3 thermal performance, and AEC-Q101 compliance - making it optimal for space-constrained, low-power automotive loads where fast switching and minimal layout complexity are prioritized.
Availability
DMN62D1LFDQ-13 is available at Aetrix Electronics and suitable for automotive LED backlighting, USB-C load switching, and engine control unit (ECU) sensor biasing requiring stable component supply, full traceability, and AEC-Q101 documentation support.
Supply support for DMN62D1LFDQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.
The DMN62D1LFDQ-13 belongs to Diodes' AEC-Q101-qualified small-signal MOSFET product line, engineered specifically for low-voltage, low-current automotive power switching where space, thermal constraints, and qualification rigor are critical.
FAQ
Is DMN62D1LFDQ-13 suitable for linear-mode operation?
Yes - its specified VGS(TH) range (0.6–1.0 V), low IDSS (<1 µA), and SOA curve validated down to DC support stable linear regulation in sensor bias applications. Thermal derating must follow RθJA = 237 °C/W on FR-4 with minimum pad layout.
What is the maximum safe gate voltage for DMN62D1LFDQ-13?
The absolute maximum VGS is ±20 V per datasheet. The integrated gate protection diode clamps at ~±18 V, allowing direct connection to 18 V automotive rails without external Zener. Operation above ±15 V increases IGSS leakage but remains within specification limits.
Does DMN62D1LFDQ-13 require a gate resistor in automotive PWM applications?
A series gate resistor (10–47 Ω) is recommended to dampen ringing caused by PCB trace inductance and gate capacitance interaction. This prevents false triggering and reduces EMI, especially in 1–20 kHz PWM backlighting where tR/tF = 2.8/13.9 ns can excite resonances.
How does moisture sensitivity level 1 affect handling of DMN62D1LFDQ-13?
MSL-1 means the device may be stored indefinitely at ≤30 °C/60 % RH without baking. No floor life limitation applies - it can be mounted directly from tape-and-reel after standard SMT reflow without preconditioning, simplifying automotive production logistics.
DMN62D1LFDQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 3-XDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 400mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.5V, 4V
- Rds On (Max) @ Id, Vgs:
- 2Ohm @ 100mA, 4V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.55 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 36 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 500mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN1212-3
DMN62D1LFDQ-13 FAQ
1.How can I place an order for DMN62D1LFDQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN62D1LFDQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN62D1LFDQ-13 reliable?
The price and inventory of DMN62D1LFDQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN62D1LFDQ-13 is usually 5 days.
3.What payment methods are accepted for DMN62D1LFDQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN62D1LFDQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN62D1LFDQ-13?
DMN62D1LFDQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN62D1LFDQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN62D1LFDQ-13?
For technical support, including DMN62D1LFDQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN62D1LFDQ-13 requirements.
6.How does Aetrix verify that DMN62D1LFDQ-13 is sourced from the original manufacturer or authorized distributors?
All DMN62D1LFDQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN62D1LFDQ-13 meets industry standards.
7.What is the process for return or replacement of DMN62D1LFDQ-13?
All DMN62D1LFDQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN62D1LFDQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN62D1LFDQ-13 part is unused and in its original packaging.
Return procedure for DMN62D1LFDQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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