Diodes Incorporated DMN62D1LFDQ-7
- Part No.:
- DMN62D1LFDQ-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 3-PowerUDFN
- Datasheet:
-
DMN62D1LFDQ-7.pdf
- Description:
- MOSFET N-CH 60V 400MA 3DFN T&R 3
- Quantity:
- Payment:

- Shipping:

Inventory:4,502
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Product details
Overview
DMN62D1LFDQ from Diodes Incorporated is an AEC-Q101-qualified N-channel enhancement-mode MOSFET in a U-DFN1212-3 package, rated for 60 V VDSS, 400 mA ID at 4 V VGS, and 0.8 Ω typical RDS(ON) under those conditions. It integrates gate protection diodes and ESD protection, and is designed for automotive backlighting, power management, and DC-DC converter switching stages.
For engineers reviewing the DMN62D1LFDQ datasheet, DMN62D1LFDQ pinout, DMN62D1LFDQ application, or DMN62D1LFDQ equivalent, key selection criteria include its low 2.5 Ω RDS(ON) at 2.5 V VGS, 36 pF Ciss, AEC-Q101 qualification, and U-DFN1212-3 thermal performance (RθJA = 237 °C/W).
Technical Context
This MOSFET operates as a low-voltage, low-current load switch with enhancement-mode gate control and integrated body diode. Its 0.6–1.0 V VGS(TH) enables direct drive from 1.8 V and 2.5 V logic, while its 0.5 W PD rating and 237 °C/W RθJA define thermal limits on FR-4 PCBs.
The device features 3.6 pF Crss and 21 ns tD(OFF), supporting fast switching in space-constrained automotive modules. Gate charge values (Qg = 0.55 nC, Qgd = 0.12 nC) confirm suitability for high-frequency PWM control in LED drivers and point-of-load regulators.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - supports 48 V automotive systems with margin against transients |
| RDS(ON) | 0.8 Ω (typ) @ VGS = 4 V, ID = 100 mA - enables <100 mW conduction loss at 350 mA |
| ID | 400 mA @ TA = +25°C - suitable for LED string current control and auxiliary rail switching |
| Ciss | 36 pF - reduces gate drive power and improves switching efficiency at >1 MHz |
| tD(OFF) | 21 ns - allows clean turn-off in 500 kHz–1 MHz DC-DC controllers |
| VGS(TH) | 0.6–1.0 V - ensures reliable turn-on with 1.8 V microcontroller GPIO |
| PD | 0.5 W - defines maximum continuous dissipation on standard FR-4 layout |
Pinout & Package
Package: U-DFN1212-3 (Type C), 1.2 × 1.2 mm, 0.5 mm height, NiPdAu-plated terminals, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Drain) | Power output node | Connected to load (e.g., LED anode or buck converter switch node); thermally coupled to exposed pad |
| Pin 2 (Source) | Return path / reference | Common ground return for load current; ties to PCB ground plane for thermal and EMI control |
| Pin 3 (Gate) | Control input | High-impedance MOSFET gate requiring <0.55 nC charge for full turn-on; protected by internal diode |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at low VGS | 2.5 Ω @ 2.5 V - enables direct interface with 2.5 V logic without level-shifting |
| ESD protection | HBM ±2 kV - eliminates need for external TVS in compact automotive modules |
| Fast switching | tR = 2.8 ns, tF = 13.9 ns - minimizes overlap loss in synchronous rectifier or PWM dimming |
| AEC-Q101 qualification | Qualified per stress test standard - required for under-hood and instrument cluster applications |
| Green packaging | Halogen- and antimony-free, RoHS 3 compliant - meets automotive OEM environmental mandates |
Applications
| Automotive LED Backlighting | USB-C Power Delivery Load Switch |
|---|---|
Use Scenario: Driving white LED strings in instrument cluster LCD backlight with PWM dimming at 1–5 kHz. IC Role / Device Role: Low-side constant-current switch controlling LED cathode return path. Use Value: 0.8 Ω RDS(ON) limits voltage drop to <300 mV at 350 mA, preserving forward voltage headroom for 3–4 LED series strings. | Use Scenario: Enabling/disabling 5 V/3 A USB-C power path in infotainment head units. IC Role / Device Role: Single-pole load switch isolating downstream circuitry during fault or standby. Use Value: 21 ns tD(OFF) and 13.9 ns tF ensure rapid fault shutdown (<100 ns), meeting USB PD 3.1 fast-fault response requirements. |
| Automotive Body Control Module (BCM) | Low-Power DC-DC Converter High-Side Switch |
Use Scenario: Controlling 12 V solenoid valves or small relays in door lock or mirror actuation circuits. IC Role / Device Role: Low-side driver interfacing with 3.3 V microcontroller GPIO. Use Value: 0.6–1.0 V VGS(TH) guarantees turn-on with 3.3 V logic; 400 mA rating covers typical 200–300 mA solenoid loads. | Use Scenario: Synchronous rectification in 3.3 V buck converter supplying MCU core rails. IC Role / Device Role: High-side switch in discrete buck stage operating at 2 MHz. Use Value: 36 pF Ciss and 0.55 nC Qg reduce gate drive losses, enabling >90% efficiency at 2 MHz switching frequency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel low-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN62D0LFDQ-7 | Lower RDS(ON): 0.5 Ω @ 4.5 V; higher Qg: 0.7 nC; same package | Better conduction loss but slower switching; less suitable for >1 MHz PWM | Select when minimizing I²R loss dominates over switching speed |
| NTMFS4C06NT1G | Higher ID: 6.2 A; larger SO-8FL package; 1.4 mΩ RDS(ON) @ 10 V | Not pin-compatible; requires PCB redesign; intended for higher-power DC-DC | Choose only if system requires >500 mA continuous current and board space permits SO-8FL |
Compared with DMN62D1LFDQ, DMN62D0LFDQ offers lower conduction loss at higher gate drive but sacrifices switching speed, while NTMFS4C06NT1G delivers orders-of-magnitude higher current capability at the cost of footprint and compatibility-making DMN62D1LFDQ optimal for space- and voltage-constrained automotive signal-switching roles.
Availability
DMN62D1LFDQ is available at Aetrix Electronics and suitable for automotive LED backlighting, USB-C power delivery load switching, and body control module (BCM) actuator driving requiring stable component supply across production lifecycles.
Supply support for DMN62D1LFDQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and consumer markets.
The DMN62D1LFDQ belongs to Diodes' AEC-Q101-qualified U-DFN logic-level MOSFET product line, engineered specifically for space-constrained, low-voltage automotive subsystems requiring robust transient immunity and PPAP-ready documentation.
FAQ
What is the maximum safe operating junction temperature for DMN62D1LFDQ?
The DMN62D1LFDQ has a specified operating junction temperature range of –55 °C to +150 °C. Its absolute maximum TJ is 150 °C; sustained operation above this threshold risks parametric shift and long-term reliability degradation. Thermal design must ensure TJ remains ≤150 °C under worst-case ambient and power dissipation conditions.
Does DMN62D1LFDQ require an external gate resistor for automotive PWM applications?
No external gate resistor is required for basic functionality, but a 10–47 Ω series resistor is recommended in automotive PWM applications to damp ringing caused by PCB trace inductance and gate capacitance interaction. The device's 59.8 Ω intrinsic Rg provides partial damping, yet external resistance improves EMI performance and reduces gate overshoot in noisy environments.
Is the body diode in DMN62D1LFDQ rated for continuous reverse recovery in DC-DC applications?
The integrated body diode has a typical VSD of 0.8 V at 115 mA and is characterized for unidirectional freewheeling, not hard reverse recovery. It is not rated for repetitive reverse recovery stress; use in synchronous rectifier configurations requires external Schottky or dedicated synchronous MOSFETs to avoid reliability risk from reverse recovery energy dissipation.
Can DMN62D1LFDQ be used in hot-swap circuits with inrush current limiting?
DMN62D1LFDQ is not optimized for hot-swap inrush limiting due to its lack of built-in slew-rate control or current-limiting circuitry. While it can function as a basic ON/OFF switch in such circuits, precise inrush control requires external gate timing networks or dedicated hot-swap controllers-its 0.5 W PD and 237 °C/W RθJA limit safe single-pulse energy handling to ~10 mJ, insufficient for typical 12 V/1000 µF inrush events.
DMN62D1LFDQ-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 3-PowerUDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 400mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.5V, 4V
- Rds On (Max) @ Id, Vgs:
- 2Ohm @ 100mA, 4V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.55 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 36 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 500mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN1212-3 (Type C)
DMN62D1LFDQ-7 FAQ
1.How can I place an order for DMN62D1LFDQ-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN62D1LFDQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN62D1LFDQ-7 reliable?
The price and inventory of DMN62D1LFDQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN62D1LFDQ-7 is usually 5 days.
3.What payment methods are accepted for DMN62D1LFDQ-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN62D1LFDQ-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN62D1LFDQ-7?
DMN62D1LFDQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN62D1LFDQ-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN62D1LFDQ-7?
For technical support, including DMN62D1LFDQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN62D1LFDQ-7 requirements.
6.How does Aetrix verify that DMN62D1LFDQ-7 is sourced from the original manufacturer or authorized distributors?
All DMN62D1LFDQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN62D1LFDQ-7 meets industry standards.
7.What is the process for return or replacement of DMN62D1LFDQ-7?
All DMN62D1LFDQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN62D1LFDQ-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN62D1LFDQ-7 part is unused and in its original packaging.
Return procedure for DMN62D1LFDQ-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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