Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMN62D2U-13

Part No.:
DMN62D2U-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixDMN62D2U-13.pdf
Description:
2N7002 FAMILY SOT23 T&R 10K
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,212

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMN62D2U-13 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in SOT23 package, rated for 390mA continuous drain current at VGS = 5.0V, with RDS(ON) = 2.0Ω (max) under that condition and 4.0Ω (max) at VGS = 1.8V. It features ESD protection, low input capacitance (Ciss = 41pF), and fast switching (tF = 19.5ns), deployed in backlighting and motor control circuits.

For engineers reviewing the DMN62D2U-13 datasheet, DMN62D2U-13 pinout, DMN62D2U-13 application, or DMN62D2U-13 equivalent, key selection criteria include gate threshold voltage (0.5–1.0V), junction-to-ambient thermal resistance (197°C/W), body diode forward voltage (0.7–1.4V), pulsed drain current capability (1.2A), and RoHS/"Green" compliance status.

Technical Context

This MOSFET operates as a low-voltage logic-level switch optimized for 1.8V–5.0V gate drive compatibility. Its VGS(TH) range (0.5–1.0V) enables reliable turn-on with microcontroller GPIOs, while its normalized RDS(ON) variation ≤2.2× over −55°C to +150°C ensures stable conduction across industrial temperature ranges.

The device integrates an intrinsic body diode with VSD = 0.7V (typ) at IS = 115mA and exhibits low dynamic parameters: Qg = 0.8nC, Qgd = 0.1nC, and Crss = 4.2pF - supporting high-frequency PWM operation in compact DC-DC and LED driver topologies.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 60V - supports input rails up to 48V nominal systems with margin against transients
RDS(ON) @ VGS = 5.0V 2.0Ω max - limits I²R loss to ≤310mW at 390mA, enabling thermally constrained PCB layouts
ID Continuous 390mA @ TA = +25°C - defines maximum steady-state load current without derating on standard FR-4
Ciss 41pF - reduces gate drive power requirement and improves switching efficiency above 1MHz
tF 19.5ns - enables clean turn-off in 500kHz+ PWM dimming without shoot-through risk
VGS(TH) 0.5–1.0V - ensures full enhancement with 1.8V logic outputs, eliminating need for level shifters
PD 0.6W - sets absolute power limit before thermal shutdown on minimal copper pad layout

Pinout & Package

Package: SOT23 - surface-mount plastic package with matte tin-annealed terminals, UL 94V-0 rated, moisture sensitivity level 1, weight ≈ 0.008g.

Pin/Terminal Circuit Role Design Meaning
1 (Source) Current return path for drain-source conduction Internally connected to substrate; used as reference node for gate drive and body diode cathode
2 (Gate) Control electrode for channel formation High-impedance input requiring <0.1µA leakage; sensitive to ESD (protected per datasheet)
3 (Drain) Main current output terminal Connected to load/high-side rail; carries full switched current and body diode reverse recovery stress

Key Features

Feature Design Value
Logic-level gate drive compatibility Operates fully enhanced down to VGS = 1.8V, enabling direct interface with 1.8V/2.5V/3.3V MCUs
Low thermal resistance packaging RθJA = 197°C/W on minimum pad layout - allows 390mA operation without heatsink at +70°C ambient
Integrated ESD protection HBM rating ≥2kV (per industry practice for qualified SOT23 MOSFETs; confirmed in Features section)
Halogen- and antimony-free "Green" construction Br < 900ppm, Cl < 900ppm (total Br+Cl < 1500ppm), Sb < 1000ppm - meets automotive and medical environmental mandates
Low gate charge Qg = 0.8nC - reduces gate driver power dissipation and propagation delay in high-frequency switching

Applications

LED Backlight Control Small Motor Drive

Use Scenario: Driving white LED strings in portable displays using PWM dimming at 1–5kHz.

IC Role / Device Role / Timing Role: Low-side switch controlling LED current path; synchronizes with PWM controller's duty cycle.

Use Value: 19.5ns fall time prevents LED current overshoot during dimming transitions, preserving color consistency and lifetime.

Use Scenario: H-bridge half-bridge leg for 3V–5V brushed DC motors in IoT actuators and precision valves.

IC Role / Device Role / Timing Role: High-speed power switch enabling bidirectional control with dead-time management.

Use Value: 0.5–1.0V gate threshold ensures robust turn-on even with battery voltage sag to 3.0V, maintaining torque stability.

USB-Powered Power Management Low-Power Sensor Interface Switching

Use Scenario: Load switch enabling/disabling 5V USB peripherals to meet USB suspend current limits (<100µA).

IC Role / Device Role / Timing Role: Controlled power path switch with fast enable/disable response.

Use Value: 1.0µA max IDSS at 60V and ±10µA IGSS ensure sub-100µA system standby current compliance.

Use Scenario: Isolating analog sensor supply rails during MCU sleep modes to reduce system quiescent current.

IC Role / Device Role / Timing Role: Precision low-leakage power gate between LDO output and sensor VDD.

Use Value: 4.0Ω RDS(ON) at VGS = 1.8V allows >95% voltage delivery to 10kΩ sensor loads while minimizing dropout.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN62D2UQ-13 Automotive-qualified (AEC-Q101), identical RDS(ON), same SOT23 package, but with extended temperature range (−40°C to +150°C) and tighter parametric screening Required for automotive infotainment backlighting or body control modules where qualification is mandatory Select when AEC-Q101 compliance and extended TJ range are contractually required
AO3400A Higher RDS(ON) (2.7Ω @ VGS = 2.5V), higher Ciss (65pF), no specified ESD rating, same SOT23 footprint Acceptable for non-critical consumer motor drives where cost is prioritized over leakage and ESD robustness Choose only if design tolerates 35% higher conduction loss and lacks ESD-sensitive signal routing near gate

Compared with DMN62D2U-13, DMN62D2UQ-13 adds automotive qualification at no performance trade-off, while AO3400A sacrifices gate drive efficiency and ESD protection for lower unit cost - making DMN62D2U-13 optimal for industrial and medical portable devices needing guaranteed low-VGS operation and reliability.

Availability

DMN62D2U-13 is available at Aetrix Electronics and suitable for LED backlight control, small motor drive, and USB-powered power management applications requiring stable component supply, consistent parametric performance, and full RoHS/"Green" compliance.

Supply support for DMN62D2U-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the Philippines.

The DMN62D2U belongs to Diodes' logic-level MOSFET product line, engineered specifically for space-constrained, low-voltage power switching in portable and battery-operated equipment where gate drive simplicity and thermal efficiency are critical.

FAQ

What is the maximum safe operating junction temperature for DMN62D2U-13?

The absolute maximum junction temperature is +150°C, validated by SOA curves and thermal characterization. At TA = +70°C with minimum recommended pad layout, the device sustains 314mA continuous drain current before reaching TJ(max), per datasheet Note 5 and Figure 12's DC boundary.

Does DMN62D2U-13 require external gate resistors for typical 3.3V MCU drive?

No external gate resistor is required for basic switching below 100kHz. With Qg = 0.8nC and typical MCU GPIO drive strength (>10mA), rise/fall times remain within safe limits. A 10Ω series resistor is recommended only for EMI suppression in high-noise environments or when driving multiple parallel devices.

Can DMN62D2U-13 be used in reverse polarity protection circuits?

No - it is a standard N-channel MOSFET with source tied to ground in typical low-side configurations. For reverse polarity protection, a P-channel device (e.g., DMG2305U) or back-to-back N-channel arrangement is required; this part lacks body diode orientation or gate control architecture for that function.

Is the SOT23 package of DMN62D2U-13 compatible with reflow soldering per J-STD-020?

Yes - the device is rated Moisture Sensitivity Level 1 per J-STD-020, meaning it may be stored indefinitely at ≤30°C/60% RH and subjected to standard Pb-free reflow profiles (peak 260°C, 30 seconds max) without baking or special handling.

DMN62D2U-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
390mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 5V
Rds On (Max) @ Id, Vgs:
2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
0.8 nC @ 4.5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
41 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
500mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3

DMN62D2U-13 FAQ

1.How can I place an order for DMN62D2U-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN62D2U-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN62D2U-13 reliable?

The price and inventory of DMN62D2U-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN62D2U-13 is usually 5 days.

3.What payment methods are accepted for DMN62D2U-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN62D2U-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN62D2U-13?

DMN62D2U-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN62D2U-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN62D2U-13?

For technical support, including DMN62D2U-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN62D2U-13 requirements.

6.How does Aetrix verify that DMN62D2U-13 is sourced from the original manufacturer or authorized distributors?

All DMN62D2U-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN62D2U-13 meets industry standards.

7.What is the process for return or replacement of DMN62D2U-13?

All DMN62D2U-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN62D2U-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN62D2U-13 part is unused and in its original packaging.

Return procedure for DMN62D2U-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN62D2U-13 Tags

  • DMN62D2U-13
  • DMN62D2U-13 PDF
  • DMN62D2U-13 Datasheet
  • DMN62D2U-13 Specifications
  • DMN62D2U-13 Images
  • Diodes Incorporated
  • Diodes Incorporated DMN62D2U-13
  • Buy DMN62D2U-13
  • DMN62D2U-13 Price
  • DMN62D2U-13 Distributor
  • DMN62D2U-13 Supplier
  • DMN62D2U-13 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER