Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMN62D2UDW-13

Part No.:
DMN62D2UDW-13
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
6-TSSOP, SC-88, SOT-363
Datasheet:
AetrixDMN62D2UDW-13.pdf
Description:
MOSFET 2N-CH 60V 0.34A SOT363
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,269

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMN62D2UDW-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT363 package, rated for 60V VDSS, with RDS(ON) of 2.0Ω @ VGS = 5.0V and 4.0Ω @ VGS = 1.8V, delivering 340mA continuous drain current at +25°C - used in compact motor control and low-voltage power-management circuits.

For engineers reviewing the DMN62D2UDW-13 datasheet, DMN62D2UDW-13 pinout, DMN62D2UDW-13 application, or DMN62D2UDW-13 equivalent, key selection criteria include low gate threshold (0.5–1.0V), ultra-small footprint, ESD protection, and dual-channel integration for space-constrained DC-DC and load-switching designs.

Technical Context

This dual MOSFET integrates two independent N-channel devices sharing no internal connection - each channel features separate source, drain, and gate terminals with integrated gate-protection diodes. It operates with low VGS(TH) (0.5–1.0V) enabling direct drive from 1.8V/2.5V logic, and exhibits fast switching (tD(ON) = 1.5ns, tF = 19.5ns) under 10V gate drive.

Thermal performance is defined by RθJA = 390°C/W on FR-4 with minimum pad layout, limiting steady-state power dissipation to 0.3W; junction temperature range spans –55°C to +150°C, supporting industrial and extended-temperature operation without derating below +70°C for 273mA ID.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS60V - supports input rails up to 48V nominal systems with margin for transients
RDS(ON) @ VGS = 5V2.0Ω - enables ≥340mA continuous current with <340mW conduction loss at full load
RDS(ON) @ VGS = 1.8V4.0Ω - ensures functional switching down to 1.8V logic supply without external level shifters
VGS(TH)0.5–1.0V - guarantees turn-on with sub-2V microcontroller GPIOs and battery-backed circuits
Ciss41pF - minimizes gate drive energy and supports >1MHz PWM in compact DC-DC converters
Qg0.8nC - reduces gate driver power consumption and simplifies low-current gate drive design
PD (Steady-State)0.3W - defines maximum continuous power on standard FR-4 PCB with minimal copper area

Pinout & Package

Package: SOT363 - ultra-small surface-mount, 6-pin, dual-channel discrete package with 0.65mm pitch, 2.15mm × 2.10mm footprint, and 0.95mm height; RoHS-compliant, halogen-free, matte tin-plated terminals.

Pin/TerminalCircuit RoleDesign Meaning
S1Source of Channel 1Low-side return path for first MOSFET; internally unconnected to other terminals
D1Drain of Channel 1High-side switching node for Channel 1; connects to load or rail
G1Gate of Channel 1Control input for Channel 1; includes integrated ESD protection diode to S1
S2Source of Channel 2Independent return path for second MOSFET; electrically isolated from S1
D2Drain of Channel 2Second high-side switching node; no internal connection to D1
G2Gate of Channel 2Independent control input with dedicated ESD diode to S2

Key Features

FeatureDesign Value
Dual independent N-channel topologyEnables two separate low-side switches in one footprint - eliminates board space for two discrete SOT-23s
Low VGS(TH) (0.5–1.0V)Permits direct interface with 1.8V/2.5V I/O without level-shifting circuitry or gate drivers
ESD protection on both gatesWithstands ±2kV HBM per JESD22-A114, reducing need for external TVS in handheld and portable designs
Ultra-low Ciss (41pF) and Qg (0.8nC)Supports efficient 1–2MHz switching in space-limited buck regulators and LED drivers
Lead-free, halogen-free "Green" constructionMeets IPC-J-STD-020 Level 1 moisture sensitivity and automotive-grade environmental compliance requirements

Applications

Brushless DC Motor Driver StageUSB-C Load Switch

Use Scenario: Half-bridge low-side driver in 5–24V BLDC fan modules requiring compact, thermally efficient switching.

IC Role / Device Role / Timing Role: Dual low-side switch controlling phase current paths; synchronized with external high-side FET or gate driver.

Use Value: 2.0Ω RDS(ON) at 5V gate drive limits conduction loss to <340mW per channel, enabling fan operation without heatsinking on 2-layer PCBs.

Use Scenario: Input power path control for USB-C PD sink applications with 5–20V input and strict inrush management.

IC Role / Device Role / Timing Role: Dual-channel load switch managing VBUS and CC line power domains independently.

Use Value: Independent gate control allows staggered turn-on to limit inrush; 1.8V-compatible threshold supports direct MCU GPIO control without auxiliary bias.

IoT Sensor Node Power GatingPortable Medical Device Battery Management

Use Scenario: Selective power gating of BLE radio, accelerometer, and ADC subsystems in coin-cell-powered wearables.

IC Role / Device Role / Timing Role: Dual independent power switches isolating non-active peripherals to extend battery life.

Use Value: 1.0V max VGS(TH) ensures reliable turn-on even as battery voltage drops to 2.0V, maintaining system uptime beyond 95% discharge depth.

Use Scenario: Isolation of diagnostic sensors and wireless telemetry modules in Class II medical handheld units.

IC Role / Device Role / Timing Role: Dual-channel isolation switch separating patient-connected analog front-end from digital processing domain.

Use Value: ESD-protected gates and –55°C to +150°C rating support sterilization cycles and field-deployed reliability without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN62D0UFDW-7Same SOT363 package, but 40V VDSS and 1.2Ω RDS(ON) @ 4.5V; lower voltage rating, tighter RDS(ON)Optimized for ≤36V systems like USB-PD adapters and 24V industrial IO; not suitable for 48V bus interfacesSelect when operating voltage stays below 40V and lower conduction loss is prioritized over voltage margin
NTJD4152P60V VDSS, but P-channel configuration; RDS(ON) = 2.5Ω @ –4.5V; complementary topologyUsed in high-side load switching where sourcing current is required; incompatible with low-side-only layoutsChoose only for high-side switch roles - requires inverted logic and negative gate drive relative to DMN62D2UDW

Compared with DMN62D2UDW-13, DMN62D0UFDW-7 trades voltage headroom for lower RDS(ON) in sub-40V systems, while NTJD4152P provides high-side capability at the cost of logic inversion and higher gate drive complexity - neither is pin-compatible, and both require schematic-level re-evaluation.

Availability

DMN62D2UDW-13 is available at Aetrix Electronics and suitable for motor controls, USB-C power delivery load switching, and IoT sensor node power gating requiring stable component supply across production volumes and long-life programs.

Supply support for DMN62D2UDW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This device belongs to Diodes' PowerMOS™ family, engineered specifically for space-constrained, low-voltage power management where dual-channel integration, low-threshold drive, and robust ESD tolerance are critical - targeting portable, medical, and industrial edge nodes.

FAQ

What is the maximum continuous drain current for DMN62D2UDW-13 at +70°C ambient?

The maximum continuous drain current is 273mA at TA = +70°C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat dissipation at elevated ambient temperatures on a standard FR-4 board with minimum pad layout, where RθJA = 390°C/W limits junction temperature rise.

Does DMN62D2UDW-13 support 1.8V logic-level gate drive reliably?

Yes - its guaranteed VGS(TH) range of 0.5V to 1.0V and RDS(ON) = 4.0Ω @ VGS = 1.8V ensure full enhancement and usable on-resistance at 1.8V, enabling direct interface with modern ultra-low-voltage MCUs and PMICs without external level shifting.

Is the SOT363 package lead-free and RoHS compliant?

Yes - DMN62D2UDW-13 uses matte tin-finished alloy 42 leadframe and green molding compound, meeting EU RoHS Directive 2015/863/EU (RoHS 3), with no intentionally added lead, halogens, or antimony. Moisture sensitivity is rated Level 1 per J-STD-020.

Can DMN62D2UDW-13 be used in automotive applications?

No - the standard DMN62D2UDW-13 is not AEC-Q200 qualified. Diodes offers automotive-grade variants with Q-suffix (e.g., DMN62D2UDWQ-13) that undergo PPAP, are manufactured in IATF 16949-certified facilities, and meet AEC-Q101 stress testing requirements for discrete MOSFETs.

DMN62D2UDW-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
6-TSSOP, SC-88, SOT-363
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel
FET Feature:
-
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
340mA (Ta)
Rds On (Max) @ Id, Vgs:
2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
0.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
41pF @ 30V
Power - Max:
300mW
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-363

DMN62D2UDW-13 FAQ

1.How can I place an order for DMN62D2UDW-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN62D2UDW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN62D2UDW-13 reliable?

The price and inventory of DMN62D2UDW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN62D2UDW-13 is usually 5 days.

3.What payment methods are accepted for DMN62D2UDW-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN62D2UDW-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN62D2UDW-13?

DMN62D2UDW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN62D2UDW-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN62D2UDW-13?

For technical support, including DMN62D2UDW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN62D2UDW-13 requirements.

6.How does Aetrix verify that DMN62D2UDW-13 is sourced from the original manufacturer or authorized distributors?

All DMN62D2UDW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN62D2UDW-13 meets industry standards.

7.What is the process for return or replacement of DMN62D2UDW-13?

All DMN62D2UDW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN62D2UDW-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN62D2UDW-13 part is unused and in its original packaging.

Return procedure for DMN62D2UDW-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN62D2UDW-13 Tags

  • DMN62D2UDW-13
  • DMN62D2UDW-13 PDF
  • DMN62D2UDW-13 Datasheet
  • DMN62D2UDW-13 Specifications
  • DMN62D2UDW-13 Images
  • Diodes Incorporated
  • Diodes Incorporated DMN62D2UDW-13
  • Buy DMN62D2UDW-13
  • DMN62D2UDW-13 Price
  • DMN62D2UDW-13 Distributor
  • DMN62D2UDW-13 Supplier
  • DMN62D2UDW-13 Wholesale
Related Products
SSM6N7002KFU,LF
SSM6N7002KFU,LF

Toshiba Semiconductor and Storage

2N7002DW-7-F
2N7002DW-7-F

Diodes Incorporated

SSM6L56FE,LM
SSM6L56FE,LM

Toshiba Semiconductor and Storage

SSM6N37FU,LF
SSM6N37FU,LF

Toshiba Semiconductor and Storage

2N7002DWH6327XTSA1
2N7002DWH6327XTSA1

Infineon Technologies

2N7002BKS,115
2N7002BKS,115

Nexperia USA Inc.

DMG1016UDW-7
DMG1016UDW-7

Diodes Incorporated

UM6K33NTN
UM6K33NTN

Rohm Semiconductor

DMG6602SVT-7
DMG6602SVT-7

Diodes Incorporated

EM6K34T2CR
EM6K34T2CR

Rohm Semiconductor

UM6K34NTCN
UM6K34NTCN

Rohm Semiconductor

DMG6601LVT-7
DMG6601LVT-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER