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Diodes Incorporated DMN62D2UDWQ-13
- Part No.:
- DMN62D2UDWQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
DMN62D2UDWQ-13.pdf
- Description:
- MOSFET 2N-CH 60V 0.34A SOT363
- Quantity:
- Payment:
- Shipping:
Inventory:4,499
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Product details
Overview
DMN62D2UDWQ-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET qualified to AEC-Q101 for automotive use, featuring 60 V VDSS, 2.0 Ω RDS(ON) @ 5 VGS, and 340 mA continuous drain current at +25°C. It integrates two matched low-threshold devices in a single SOT363 package for space-constrained motor control and power management circuits.
For engineers reviewing the DMN62D2UDWQ-13 datasheet, DMN62D2UDWQ-13 pinout, DMN62D2UDWQ-13 application, or DMN62D2UDWQ-13 equivalent, key selection criteria include gate threshold voltage (0.5–1.0 V), ultra-low input capacitance (41 pF Ciss), fast switching (tF = 19.5 ns), AEC-Q101 qualification, and dual-channel integration in a 2.2 × 2.1 mm footprint.
Technical Context
This dual MOSFET uses planar silicon technology with integrated gate protection diodes and ESD hardening per HBM >2 kV. Each channel operates independently with matched VGS(TH) and RDS(ON) across temperature, enabling synchronous half-bridge or load-switch configurations without external balancing.
The device supports logic-level drive down to 1.8 VGS, delivering 270 mA at 4.0 Ω RDS(ON), and maintains stable performance from −55°C to +150°C junction temperature. Its low Coss (5.4 pF) and Crss (4.2 pF) minimize switching losses in high-frequency DC-DC and motor gate-drive applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Withstands up to 60 V drain-source voltage before breakdown, suitable for 24 V automotive bus systems with transient margin. |
| RDS(ON) @ 5 VGS | 2.0 Ω - Enables 340 mA continuous conduction with ≤340 mW I²R loss at room temperature in compact layouts. |
| VGS(TH) | 0.5–1.0 V - Ensures reliable turn-on with microcontroller GPIOs or low-voltage logic drivers without level-shifting. |
| Ciss | 41 pF - Reduces gate drive power and speeds up switching transitions in PWM-controlled loads. |
| tF | 19.5 ns - Supports >5 MHz switching frequencies in high-efficiency DC-DC converters and LED drivers. |
| PD (min pad) | 0.3 W - Delivers usable power handling on standard FR-4 with 2 oz copper and minimal thermal relief. |
| Package | SOT363 - 6-pin ultra-small surface-mount package (2.2 × 2.1 × 1.0 mm) enabling dense dual-FET integration. |
Pinout & Package
Package: SOT363 - 6-pin, dual-row, plastic-molded surface-mount package with matte tin terminals, UL 94V-0 rated, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| S1 | Source of Channel 1 | Low-side return path for first MOSFET; internally connected to substrate tie point for thermal stability. |
| D1 | Drain of Channel 1 | High-current output node for motor phase or load switch; shares thermal mass with D2 for balanced dissipation. |
| G1 | Gate of Channel 1 | Logic-level control input with integrated ESD protection diode to S1 and D1. |
| S2 | Source of Channel 2 | Independent source terminal enabling floating or common-source configurations. |
| D2 | Drain of Channel 2 | Second high-current output; electrically isolated but thermally coupled to D1 for thermal tracking. |
| G2 | Gate of Channel 2 | Separate logic input with identical threshold and capacitance as G1 for synchronized or independent control. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified & PPAP capable | Validated for automotive production use with full change control, IATF 16949 manufacturing, and traceable lot documentation. |
| Ultra-low VGS(TH) (0.5–1.0 V) | Enables direct drive from 1.8 V/2.5 V/3.3 V MCUs without gate drivers, reducing BOM count and board area. |
| ESD protected (HBM >2 kV) | Withstands electrostatic discharge during assembly and field operation without external TVS components. |
| Low Ciss/Coss ratio (41/5.4 pF) | Improves Miller immunity and reduces gate drive energy, critical for high-side switching in half-bridges. |
| Halogen- and antimony-free "Green" | Complies with RoHS 3 and automotive environmental standards (<900 ppm Br/Cl, <1000 ppm Sb). |
Applications
| Automotive Body Control Module | USB-C Power Delivery Load Switch |
|---|---|
|
Use Scenario: Controlling interior lighting, window lifters, and door locks in 12 V/24 V vehicle subsystems. IC Role / Device Role / Timing Role: Dual low-side switch managing two independent resistive or inductive loads with coordinated PWM dimming. Use Value: Single-package dual FET eliminates discrete pairing mismatch, reduces PCB area by 40% vs. two SOT23 devices, and ensures matched thermal response under load cycling. |
Use Scenario: Enabling/disabling VBUS paths in USB-C PD sink applications with overcurrent and reverse-voltage protection. IC Role / Device Role / Timing Role: Back-to-back configured N-channel pair acting as bidirectional, low-leakage (≤1 µA) power switch with fast fault response. Use Value: 1.8 VGS turn-on allows direct control from USB PD controller GPIOs; 4.0 Ω RDS(ON) at 1.8 V enables 270 mA load current with <150 mW conduction loss. |
| Industrial Sensor Node Power Gating | BLDC Motor Gate Driver Auxiliary Stage |
|
Use Scenario: Powering intermittent sensors (e.g., temperature, humidity) in battery-operated IIoT nodes to extend runtime. IC Role / Device Role / Timing Role: Dual independent load switches isolating sensor supply rails and communication interfaces during sleep mode. Use Value: 1.0 µA max IDSS and 10 µA max IGSS ensure sub-µA quiescent current per channel, preserving battery life over multi-year deployments. |
Use Scenario: Driving high-side and low-side gates in 3-phase BLDC inverters using bootstrap or isolated gate drivers. IC Role / Device Role / Timing Role: Low-capacitance buffer stage translating MCU PWM outputs to gate driver inputs with matched propagation delay. Use Value: 41 pF Ciss and 52 Ω Rg enable clean 10 ns-scale edge fidelity; dual layout symmetry minimizes skew between complementary signals. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN62D2UWQ-7 | Same die, identical specs, but packaged in 3,000-piece tape-and-reel (vs. 10,000 for -13); no electrical or thermal difference. | Optimized for medium-volume prototyping or pilot runs where smaller reels reduce inventory overhead. | Select when reel size must match existing pick-and-place feeder constraints or for evaluation-stage procurement. |
| NTJD4152PT1G | Higher RDS(ON) (2.8 Ω @ 4.5 V), higher VGS(TH) (1.0–2.5 V), no AEC-Q101 qualification, larger SOT-363 variant (SOT-563). | Targeted at commercial-grade portable electronics-not automotive or safety-critical systems. | Choose only for cost-sensitive non-automotive designs where AEC-Q101 compliance and sub-1 V threshold are not required. |
Compared with DMN62D2UDWQ-13, the -7 variant offers identical performance in a smaller reel quantity, while NTJD4152PT1G trades automotive qualification and low-threshold drive for lower unit cost in non-automotive applications-making the -13 optimal for production-grade automotive power gating.
Availability
DMN62D2UDWQ-13 is available at Aetrix Electronics and suitable for automotive body control modules, USB-C power delivery load switching, industrial sensor node power gating, and BLDC motor gate driver auxiliary stages requiring stable component supply and long-term lifecycle support.
Supply support for DMN62D2UDWQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.
The DMN62D2UDWQ belongs to Diodes' AEC-Q101-qualified small-signal MOSFET product line, engineered specifically for space-constrained, low-voltage automotive power management and motor control functions.
FAQ
What is the maximum junction temperature and thermal resistance of DMN62D2UDWQ-13?
The absolute maximum junction temperature is +150°C. With minimum recommended pad layout on FR-4 (2 oz copper), its thermal resistance from junction to ambient is 260°C/W; with standard layout, it is 390°C/W. Derating curves in Figure 13 define safe pulse operation under varying duty cycles.
Does DMN62D2UDWQ-13 support back-to-back configuration for AC switching?
Yes-the dual N-channel structure enables back-to-back connection (D1–S2 and D2–S1 tied) to block bidirectional current flow, commonly used in USB-C VBUS switches. Its matched RDS(ON) and low leakage (<1 µA) ensure symmetrical on-resistance and minimal off-state power loss.
Is the SOT363 package lead-free and RoHS compliant?
Yes-DMN62D2UDWQ-13 is fully RoHS 3 compliant (2015/863/EU), with no intentionally added lead, halogens, or antimony. The terminals use matte tin over Alloy 42, and the molding compound meets UL 94V-0 flammability rating.
How does the gate threshold voltage variation affect design margin at high temperature?
VGS(TH) decreases with rising temperature (Figure 8), ranging from ~0.7 V at −55°C to ~0.4 V at +150°C. This improves turn-on robustness at high temperature but requires verification that drive voltage remains above the reduced threshold to avoid partial conduction and thermal runaway.
DMN62D2UDWQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 340mA (Ta)
- Rds On (Max) @ Id, Vgs:
- 2Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 41pF @ 30V
- Power - Max:
- 300mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-363
DMN62D2UDWQ-13 FAQ
1.How can I place an order for DMN62D2UDWQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN62D2UDWQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN62D2UDWQ-13 reliable?
The price and inventory of DMN62D2UDWQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN62D2UDWQ-13 is usually 5 days.
3.What payment methods are accepted for DMN62D2UDWQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN62D2UDWQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN62D2UDWQ-13?
DMN62D2UDWQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN62D2UDWQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN62D2UDWQ-13?
For technical support, including DMN62D2UDWQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN62D2UDWQ-13 requirements.
6.How does Aetrix verify that DMN62D2UDWQ-13 is sourced from the original manufacturer or authorized distributors?
All DMN62D2UDWQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN62D2UDWQ-13 meets industry standards.
7.What is the process for return or replacement of DMN62D2UDWQ-13?
All DMN62D2UDWQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN62D2UDWQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN62D2UDWQ-13 part is unused and in its original packaging.
Return procedure for DMN62D2UDWQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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