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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN62D2UT-13

Name: DMN62D2UT-13
Brand: Diodes Incorporated
SKU: DMN62D2UT-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN62D2UT-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: SOT-523

Datasheet:: DMN62D2UT-13.pdf

Description:: 2N7002 FAMILY SOT523 T&R 10K

Quantity:: RFQ Add To RFQ list

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Inventory:4,262

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Product details

Overview

DMN62D2UT-13 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in SOT523 package, featuring R_DS(ON) = 2.0 Ω @ V_GS = 5.0 V, 334 mA continuous drain current at +25°C, and gate threshold voltage of 0.5–1.0 V - optimized for low-voltage power management in space-constrained portable electronics.

For engineers reviewing the DMN62D2UT-13 datasheet, DMN62D2UT-13 pinout, DMN62D2UT-13 application, or DMN62D2UT-13 equivalent, key selection criteria include low V_GS(TH) for 1.8 V logic compatibility, ESD protection up to 2 kV, and thermal resistance of 350 °C/W on FR-4 with 2 oz copper.

Technical Context

This MOSFET employs planar trench-enhanced silicon process to achieve low R_DS(ON) while maintaining fast switching (t_D(ON) = 1.5 ns, t_F = 19.5 ns) and low input capacitance (C_iss = 41 pF). Its gate threshold range (0.5–1.0 V) ensures reliable turn-on with 1.8 V and 2.5 V microcontroller I/Os.

The integrated body diode supports bidirectional current flow in H-bridge motor control, with V_SD = 0.7–1.4 V at 115 mA. Thermal design is constrained by R_θJA = 350 °C/W (min pad) and 273 °C/W (1-inch² copper), limiting steady-state power dissipation to 0.4 W and 0.5 W respectively.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - supports input rails up to 48 V DC without avalanche stress
R_DS(ON)	2.0 Ω @ V_GS = 5.0 V - enables <100 mW conduction loss at 225 mA load
I_D (max)	334 mA @ T_A = +25°C - suitable for low-power load switching in wearables and sensors
V_GS(TH)	0.5–1.0 V - guarantees turn-on with 1.8 V logic-level drivers without level-shifting
C_iss	41 pF - reduces gate drive power and enables >1 MHz PWM operation
ESD Rating	±2 kV HBM - protects against handling damage in manual assembly and test environments
P_D	0.4 W (min pad layout) - defines maximum continuous power under standard PCB conditions

Pinout & Package

Package: SOT523 - ultra-small surface-mount plastic package (1.60 × 1.60 × 0.65 mm), rated for moisture sensitivity level 1 (J-STD-020), with matte tin annealed terminals solderable per MIL-STD-202.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control electrode	Accepts logic-level voltage (1.8–5.0 V); low C_iss minimizes drive current demand
Source (S)	Reference node for gate drive and current return path	Internally connected to substrate; must be tied to system ground or low-side reference
Drain (D)	Power output terminal	Carries switched load current; exposed pad not present - thermal path relies on trace copper

Key Features

Feature	Design Value
Low gate threshold voltage	0.5–1.0 V enables direct interface with 1.8 V and 2.5 V MCUs without external level shifters
Low R_DS(ON) at low V_GS	2.5 Ω @ V_GS = 2.5 V supports efficient operation in battery-powered systems with weak gate drive
Fast switching speed	t_F = 19.5 ns and t_D(OFF) = 22.6 ns reduce switching losses in high-frequency DC-DC converters
Integrated ESD protection	2 kV HBM rating eliminates need for external TVS diodes in handheld device I/O stages
Green RoHS-compliant construction	Halogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb) meets automotive and medical environmental mandates

Applications

Portable Power Switching

Motor Control (Small DC)

Use Scenario: Load switching for Bluetooth earbud charging circuits and sensor bias rails.

IC Role / Device Role / Timing Role: Low-side power switch enabling/disabling 3.3 V or 5 V subsystems under MCU control.

Use Value: 2.0 Ω R_DS(ON) limits voltage drop to <0.7 V at 300 mA, preserving battery runtime and regulation margin.

Use Scenario: Half-bridge driver stage in miniature vibration motors for smartwatches and haptic feedback modules.

IC Role / Device Role / Timing Role: High-side or low-side switch in discrete H-bridge configuration with complementary P-channel counterpart.

Use Value: Fast 19.5 ns fall time ensures clean commutation at 20–50 kHz PWM frequencies, minimizing audible noise and torque ripple.

USB-C Power Path

IoT Sensor Node Power Gating

Use Scenario: Reverse-current blocking and load disconnect in USB-C PD sink applications with 5–20 V input.

IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET for ideal diode functionality with gate driven by dedicated controller.

Use Value: 60 V V_DSS withstands USB-C transient surges; low Q_g = 0.8 nC reduces controller gate-drive burden.

Use Scenario: Power gating of BLE SoC peripherals (accelerometer, temperature sensor) during deep-sleep mode.

IC Role / Device Role / Timing Role: Standby-mode isolation switch controlled by GPIO to cut leakage paths below 1 µA.

Use Value: Gate leakage <10 µA and sub-1 µA IDSS ensure <10 nA total off-state current when paired with high-impedance loads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN62D0UT-13	R_DS(ON) = 1.0 Ω @ V_GS = 5.0 V; higher ID rating (500 mA)	Better suited for 500 mA loads but requires larger gate drive current due to higher C_iss (52 pF)	Select when lower conduction loss is critical and board space allows for slightly higher drive power.
AO3400	R_DS(ON) = 2.7 Ω @ V_GS = 4.5 V; SOT23 package (larger footprint, better thermal performance)	Higher R_θJA = 190 °C/W enables 0.8 W dissipation but occupies 3× more PCB area	Choose when thermal headroom is constrained and 2.7 Ω R_DS(ON) is acceptable for the load.

Compared with DMN62D0UT-13, DMN62D2UT-13 trades 2× lower R_DS(ON) for reduced current capability and tighter gate drive compatibility; versus AO3400, it offers 30% smaller footprint and 1.8 V logic support at the cost of 25% higher on-resistance and 80% higher thermal resistance.

Availability

DMN62D2UT-13 is available at Aetrix Electronics and suitable for portable power switching, small DC motor control, USB-C power path management, and IoT sensor node power gating requiring stable component supply across high-mix, low-volume production runs.

Supply support for DMN62D2UT-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability, energy-efficient components for consumer, industrial, and automotive markets.

The DMN62D2UT belongs to Diodes' low-voltage logic-level MOSFET product line, engineered specifically for space-constrained battery-powered devices where 1.8 V–2.5 V gate drive compatibility and minimal PCB footprint are primary design constraints.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The DMN62D2UT-13 supports 267 mA continuous drain current at T_A = +70°C, derated from 334 mA at +25°C per the datasheet's thermal curve. This reflects junction-to-ambient thermal resistance of 350 °C/W on standard FR-4 with minimum recommended pad layout.

Is this MOSFET qualified for automotive use?

No - the DMN62D2UT-13 is not AEC-Q101 qualified. Diodes offers automotive-grade equivalents (e.g., DMN62D2UTQ-13) with PPAP documentation, IATF 16949 manufacturing, and extended temperature validation. This part is intended for commercial and industrial applications only.

Can it be used in a back-to-back configuration for reverse-polarity protection?

Yes - its 60 V V_DSS and body diode forward voltage of 0.7–1.4 V make it suitable for back-to-back N-channel configurations in 5–20 V systems. Gate drive must exceed V_GS(TH) (0.5–1.0 V) on both devices; typical implementation uses a dedicated charge-pump or dual-gate driver.

What is the safe operating area (SOA) limitation at 100 µs pulse width?

At 100 µs pulse width and T_A = +25°C, the SOA limit is approximately 1.0 A at V_DS = 10 V (per Figure 12). This is governed by peak current capability (I_DM = 1.2 A) and transient thermal impedance - sustained operation above 334 mA requires careful thermal design.

DMN62D2UT-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: SOT-523

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 334mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 5V

Rds On (Max) @ Id, Vgs:: 2Ohm @ 50mA, 5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 0.8 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 41 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 400mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-523

DMN62D2UT-13 FAQ

1.How can I place an order for DMN62D2UT-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN62D2UT-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN62D2UT-13 reliable?

The price and inventory of DMN62D2UT-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN62D2UT-13 is usually 5 days.

3.What payment methods are accepted for DMN62D2UT-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN62D2UT-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN62D2UT-13?

DMN62D2UT-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN62D2UT-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN62D2UT-13?

For technical support, including DMN62D2UT-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN62D2UT-13 requirements.

6.How does Aetrix verify that DMN62D2UT-13 is sourced from the original manufacturer or authorized distributors?

All DMN62D2UT-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN62D2UT-13 meets industry standards.

7.What is the process for return or replacement of DMN62D2UT-13?

All DMN62D2UT-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN62D2UT-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN62D2UT-13 part is unused and in its original packaging.

Return procedure for DMN62D2UT-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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