Diodes Incorporated DMN62D2UTQ-13

Overview

DMN62D2UTQ-13 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in SOT523 package, qualified to AEC-Q101 and PPAP-capable, with R_DS(ON) = 2.0 Ω @ V_GS = 5.0 V, I_D = 334 mA at T_A = +25°C, and gate threshold voltage V_GS(TH) = 0.5–1.0 V - designed for low-voltage automotive motor control and power management functions.

For engineers reviewing the DMN62D2UTQ-13 datasheet, DMN62D2UTQ-13 pinout, DMN62D2UTQ-13 application, or DMN62D2UTQ-13 equivalent, this page delivers verified electrical parameters, thermal behavior under pulsed and steady-state conditions, ESD protection level (2 kV), and AEC-Q101 qualification context for automotive-grade selection.

Technical Context

This MOSFET employs silicon planar technology with integrated gate protection diode and ESD-hardened structure. Its low V_GS(TH) enables direct drive from 1.8 V/2.5 V logic, while R_DS(ON) remains ≤4.0 Ω down to V_GS = 1.8 V, supporting energy-efficient switching in space-constrained automotive modules.

Thermal performance is defined by R_θJA = 350 °C/W (minimum pad layout) and 273 °C/W (1-inch² copper), with safe operating area (SOA) validated up to 1.2 A pulsed (10 µs, 1% duty). Input capacitance C_iss = 41 pF and Q_g = 0.8 nC ensure fast turn-on (t_D(ON) = 1.5 ns) and low drive loss.

Key Specifications

Pinout & Package

Package: SOT523 - ultra-small surface-mount plastic package (1.60 × 1.60 × 0.55 mm), rated for moisture sensitivity level 1 (J-STD-020), lead-free and RoHS-compliant, with matte tin annealed terminals solderable per MIL-STD-202.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage MOSFET applications.

Compared with DMN62D2UTQ-13, DMN62D0UFB-7 offers lower R_DS(ON) but lacks automotive qualification, whereas DMN62D0UTQ-13 provides both enhanced current capability and identical AEC-Q101 compliance - making it suitable for upgraded designs requiring higher drive strength without requalification effort.

Availability

DMN62D2UTQ-13 is available at Aetrix Electronics and suitable for automotive body electronics, motor control submodules, and power management functions requiring stable component supply, AEC-Q101 traceability, and SOT523 footprint compatibility.

Supply support for DMN62D2UTQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets, with IATF 16949-certified manufacturing facilities.

This device belongs to Diodes' AEC-Q101-qualified "Automotive Small Signal MOSFET" product line, engineered specifically for space-constrained, low-power automotive subsystems where logic-level drive, thermal robustness, and long-term reliability are critical.

FAQ

Is DMN62D2UTQ-13 qualified for automotive use?

Yes - DMN62D2UTQ-13 is fully AEC-Q101 qualified, PPAP-capable, and manufactured in IATF 16949-certified facilities. It undergoes stress testing including high-temperature gate bias (HTGB), high-temperature reverse bias (HTRB), and temperature cycling (TC) per AEC-Q101 Rev G, with full documentation available upon request.

What is the maximum pulsed drain current rating?

The pulsed drain current (I_DM) is rated at 1.2 A for 10 µs pulses with 1% duty cycle. This rating is validated under SOA testing conditions (V_DS = 30 V, T_J ≤ 150°C) and reflects short-duration surge capability beyond its 334 mA continuous rating.

Does DMN62D2UTQ-13 include integrated ESD protection?

Yes - the device integrates an on-chip gate-source ESD protection diode and is rated for 2 kV Human Body Model (HBM) per JESD22-A114. This protection is verified during AEC-Q101 qualification and eliminates need for external TVS diodes in most board-level ESD scenarios.

Can DMN62D2UTQ-13 be driven directly from a 1.8 V microcontroller GPIO?

Yes - with V_GS(TH) as low as 0.5 V and guaranteed R_DS(ON) ≤ 4.0 Ω at V_GS = 1.8 V, the device achieves full enhancement using standard 1.8 V logic outputs. No level shifter or gate driver is required for typical 10–100 mA load switching applications.