Diodes Incorporated DMN62D2UTQ-7

Overview

DMN62D2UTQ-7 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in SOT523 package, qualified to AEC-Q101 and PPAP-capable for automotive use. It delivers R_DS(ON) = 2.0 Ω @ V_GS = 5.0 V, 334 mA continuous drain current at +25°C, and low gate threshold (0.5–1.0 V), enabling direct drive from 1.8 V/2.5 V logic in motor control and power management circuits.

For engineers reviewing the DMN62D2UTQ-7 datasheet, DMN62D2UTQ-7 pinout, DMN62D2UTQ-7 application, or DMN62D2UTQ-7 equivalent, key selection criteria include its AEC-Q101 qualification, low-voltage gate drive capability, 2.0 Ω on-resistance at 5 V, fast switching (t_D(ON) = 1.5 ns), and ESD protection up to 2 kV - all critical for space-constrained automotive subsystems.

Technical Context

This MOSFET employs planar silicon technology with integrated gate protection diode and ESD structure, supporting operation from –55°C to +150°C junction temperature. Its low V_GS(TH) (0.5–1.0 V) ensures reliable turn-on with 1.8 V microcontroller I/O, while normalized R_DS(ON) variation remains ≤1.6× over full temperature range.

The device features C_iss = 41 pF, C_oss = 5.4 pF, and Q_g = 0.8 nC at V_GS = 4.5 V, enabling high-frequency switching with minimal drive loss. Its SOT523 footprint (1.60 × 1.60 × 0.55 mm) supports ultra-dense PCB layouts in automotive body electronics and sensor modules.

Key Specifications

Pinout & Package

Package: SOT523 - ultra-small surface-mount plastic package (1.60 × 1.60 × 0.55 mm), moisture sensitivity level 1, matte tin–annealed terminals, RoHS- and halogen-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage MOSFET applications.

Compared with NX3008NBK,115, DMN62D2UTQ-7 provides guaranteed automotive qualification and tighter V_GS(TH) distribution; versus DMN62D0UFB-7, it trades 0.8 Ω higher R_DS(ON) for 0.4 nC lower Q_g, easing drive requirements in resource-constrained MCUs.

Availability

DMN62D2UTQ-7 is available at Aetrix Electronics and suitable for automotive door modules, engine control sensor biasing, and body control unit LED drivers requiring stable component supply, AEC-Q101 compliance, and long-term lifecycle continuity.

Supply support for DMN62D2UTQ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and consumer markets.

DMN62D2UTQ-7 belongs to Diodes' AEC-Q101-qualified small-signal MOSFET product line, designed specifically for space-constrained, low-voltage automotive subsystems requiring robustness, low drive voltage, and extended temperature operation.

FAQ

Is DMN62D2UTQ-7 suitable for 1.8 V microcontroller GPIO direct drive?

Yes. Its gate threshold voltage (V_GS(TH)) is specified 0.5–1.0 V at 250 µA, guaranteeing full enhancement with 1.8 V logic. The device achieves R_DS(ON) = 4.0 Ω @ V_GS = 1.8 V and ID = 50 mA, making it compatible with modern ultra-low-voltage MCUs without external level shifting.

What is the maximum safe operating area (SOA) limitation at 125°C ambient?

At T_A = +125°C, the maximum continuous drain current is derated to approximately 130 mA based on thermal resistance R_θJA = 350°C/W and P_D = 0.4 W. The SOA curve (Figure 12) confirms single-pulse operation up to 1.2 A for 10 µs at V_DS = 30 V, provided board layout meets minimum pad recommendations.

Does DMN62D2UTQ-7 include intrinsic body diode functionality?

Yes. It integrates a monolithic body diode with forward voltage V_SD = 0.7–1.4 V at I_S = 115 mA (V_GS = 0 V). This diode supports freewheeling in inductive loads like solenoids and relays, and enables reverse-polarity protection when used in high-side configurations with appropriate gate control.

How does the SOT523 package affect thermal performance in automotive PCBs?

The SOT523 package has R_θJA = 350°C/W on standard FR-4 (2 oz Cu, 1-inch² pad), limiting power dissipation to 0.4 W at +25°C ambient. For automotive use, thermal relief via copper pour under the drain pad and connection to internal ground planes reduces effective R_θJA to ~273°C/W, enabling 0.5 W operation at moderate ambient temperatures.