Diodes Incorporated DMN62D2UV-13

Overview

DMN62D2UV-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT563 package, rated for 60V V_DSS, with R_DS(ON) = 2.0 Ω @ V_GS = 5.0V and 450 mA continuous drain current at +25°C. It integrates ESD protection and low input capacitance (C_iss = 41 pF), enabling efficient power management in space-constrained backlighting and motor control circuits.

For engineers reviewing the DMN62D2UV-13 datasheet, DMN62D2UV-13 pinout, DMN62D2UV-13 application, or DMN62D2UV-13 equivalent, key selection criteria include its dual-channel layout, gate threshold voltage range (0.5–1.0 V), thermal resistance (R_θJA = 156 °C/W on 1-inch copper), low-voltage drive capability down to 1.8 V, and automotive-grade variant availability (DMN62D2UVQ).

Technical Context

This dual MOSFET features two independent N-channel channels sharing a common source configuration per channel (S1/D1/G1 and S2/D2/G2), each with integrated gate protection diodes and ESD hardening. Its low R_DS(ON) at 1.8 V gate drive supports direct interfacing with 1.8 V logic controllers.

The device operates across –55°C to +150°C junction temperature, with normalized R_DS(ON) variation ≤1.6× over that range at V_GS = 5.0 V. Dynamic parameters-including Q_g = 0.8 nC, t_F = 19.5 ns, and Crss = 4.2 pF-support fast switching in PWM-driven loads without excessive gate drive loss.

Key Specifications

Pinout & Package

Package: SOT563 - 6-pin ultra-small surface-mount package (1.60 × 1.60 × 0.60 mm), green molding compound, matte tin-plated leadframe, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Compared with DMN62D2UVQ-13, the base DMN62D2UV-13 offers identical performance at lower cost and shorter lead time for non-automotive applications; versus DMN6016LSD-13, it delivers true dual-channel integration with built-in gate protection-reducing component count by 50% and eliminating discrete ESD diodes.

Availability

DMN62D2UV-13 is available at Aetrix Electronics and suitable for LED backlighting, small DC motor control, and IoT power-gating applications requiring stable component supply, consistent parametric performance, and long-term production continuity.

Supply support for DMN62D2UV-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.

The DMN62D2UV belongs to Diodes' Logic-Level MOSFET product line, engineered specifically for low-voltage, high-density power switching in portable and space-constrained systems where gate drive simplicity and thermal efficiency are critical.

FAQ

What is the maximum continuous drain current for each channel at +70°C ambient?

Each channel supports 360 mA continuous drain current at TA = +70°C, as specified in the Absolute Maximum Ratings table. This derating accounts for thermal resistance (R_θJA = 156 °C/W) and junction temperature limits (T_J ≤ +150°C). Operation above this current requires thermal analysis using the transient thermal resistance curve (Figure 13) and actual PCB copper area.

Does DMN62D2UV-13 require external gate resistors for stable switching?

No external gate resistor is required for basic stability due to its low Q_g (0.8 nC) and moderate R_g (52 Ω). However, a 10–22 Ω series resistor is recommended when driving from high-impedance sources (e.g., weak GPIOs) to dampen ringing caused by PCB trace inductance and C_iss/Crss interaction.

Can DMN62D2UV-13 be used in linear regulation mode?

It is not recommended for linear regulation. The device lacks SOA curves for DC operation and has limited safe operating area beyond 100 µs pulses (Figure 12). Its R_DS(ON) variation with temperature (Figure 6) and lack of thermal shutdown make it unsuitable for constant-current linear pass applications.

How is the SOT563 package marked for polarity and channel identification?

The top-marking "2D2" identifies the product type; "YM" denotes date code (e.g., "M9" = September 2025). Pin 1 (S1) is located at the bottom-left corner when the marking is upright and readable left-to-right. The internal schematic (page 2) confirms S1–D1–G1 and S2–D2–G2 arrangement with gate protection diodes oriented anode-to-source.