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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Diodes Incorporated DMN62D2UVQ-7

Name: DMN62D2UVQ-7
Brand: Diodes Incorporated
SKU: DMN62D2UVQ-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN62D2UVQ-7

Manufacturer:: Diodes Incorporated

Category:: FET, MOSFET Arrays

Package:: SOT-563, SOT-666

Datasheet:: DMN62D2UVQ-7.pdf

Description:: MOSFET 2N-CH 60V 0.45A SOT563

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Product details

Overview

DMN62D2UVQ-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET rated for 60V drain-source voltage, with R_DS(ON) of 2.0Ω at V_GS = 5.0V and 450mA continuous drain current at T_A = +25°C. It features integrated gate protection diodes, ESD protection, and AEC-Q101 qualification for automotive motor control, backlighting, and power management circuits.

For engineers reviewing the DMN62D2UVQ-7 datasheet, DMN62D2UVQ-7 pinout, DMN62D2UVQ-7 application, or DMN62D2UVQ-7 equivalent, key selection criteria include low-voltage gate drive capability (1.8V–5.0V), dual-channel integration in SOT563, thermal resistance of 156°C/W on 1-inch copper, and AEC-Q101 PPAP support for automotive-grade reliability validation.

Technical Context

This dual MOSFET integrates two matched N-channel devices in a single SOT563 package, each with independent gate, source, and drain terminals and built-in gate protection diodes. Its 60V BVDSS rating and 1.0V typical V_GS(TH) enable operation from low-voltage microcontrollers while maintaining robustness against transients in automotive 12V systems.

The device delivers fast switching (t_D(ON) = 1.5ns, t_F = 19.5ns) and low dynamic capacitance (C_iss = 41pF, C_rss = 4.2pF), supporting high-frequency PWM control in LED backlight drivers and brushed DC motor H-bridge half-bridges. Thermal performance is specified for both minimal pad layout (R_θJA = 245°C/W) and enhanced copper (R_θJA = 156°C/W).

Key Specifications

Parameter	Value and Actual Design Meaning
BVDSS	60V - Withstands automotive load-dump transients up to ISO 7637-2 Pulse 5a without breakdown.
RDS(ON) @ VGS=5V	2.0Ω max - Enables <450mA continuous current with ≤4.5mW conduction loss at full load.
VGS(TH)	0.5–1.0V - Compatible with 1.8V/2.5V/3.3V logic outputs for direct MCU interface without level shifting.
Ciss	41pF - Minimizes gate drive power and supports >1MHz PWM in compact space-constrained modules.
Qg	0.8nC - Reduces switching energy loss and eases gate driver sizing for battery-powered applications.
TJ Range	−55°C to +150°C - Meets under-hood temperature requirements for engine control and body electronics.
ESD Rating	HBM ±2kV - Integrated protection eliminates need for external TVS on gate lines in infotainment modules.

Pinout & Package

Package: SOT563 - 6-pin ultra-small surface-mount package (1.60 × 1.60 × 0.60 mm), molded green plastic (UL 94V-0), matte tin annealed terminations, moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
S1	Source of Channel 1	Low-side return path for first MOSFET; electrically isolated from S2 for independent channel routing.
D1	Drain of Channel 1	High-side connection point for Channel 1; shares no internal connection with D2 or G2.
G1	Gate of Channel 1	Control input with integrated ESD diode to S1; requires <0.8nC charge for full turn-on at 5V.
S2	Source of Channel 2	Independent source node enabling dual half-bridge or dual low-side switch configuration.
D2	Drain of Channel 2	Separate high-side terminal allowing asynchronous switching of two loads without crosstalk.
G2	Gate of Channel 2	Second independent control input with identical threshold and capacitance as G1 for matched timing.

Key Features

Feature	Design Value
Dual independent N-channel topology	Enables space-efficient dual low-side switching or complementary half-bridge legs without discrete pairing.
AEC-Q101 qualified & PPAP capable	Validated for automotive use with full change control, IATF 16949 manufacturing, and traceable lot documentation.
Low RDS(ON) at 1.8V VGS	4.0Ω max enables functional switching from 1.8V GPIOs-critical for ultra-low-power body controller sleep modes.
Integrated gate protection diodes	Eliminates need for external Zener clamps in motor commutation circuits, reducing BOM count by two components per channel.
Green, halogen-free, RoHS 3 compliant	Meets EU Directive 2015/863/EU with Br+Cl <1500ppm and Sb <1000ppm-required for Tier 1 automotive supply chain compliance.

Applications

Automotive Motor Control

LED Backlight Dimming

Use Scenario: Driving small brushed DC motors in HVAC actuators and seat positioners within vehicle cabin modules.

IC Role / Device Role / Timing Role: Dual low-side switch controlling direction and PWM speed via independent gate signals; operates at 20–100kHz switching frequency.

Use Value: 2.5Ω R_DS(ON) at 2.5V gate drive allows direct MCU control without buffer stages, reducing PCB area and component cost by 30% vs. discrete solutions.

Use Scenario: Current regulation for multi-segment LCD backlight arrays in instrument clusters and center displays.

IC Role / Device Role / Timing Role: Constant-current sink per LED string; switched synchronously with display frame rate using 100kHz PWM.

Use Value: Low C_iss (41pF) and fast t_F (19.5ns) minimize PWM distortion and ensure precise dimming linearity across 0.1–100% brightness range.

Body Control Module Power Management

Occupant Detection Sensor Interface

Use Scenario: Load switching for solenoids, relays, and LED indicators in door modules and lighting control units.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlled by CAN/LIN microcontroller; supports diagnostic feedback via current sensing.

Use Value: −55°C to +150°C operating range ensures reliable operation near engine compartments and under-bonnet junction boxes.

Use Scenario: Bias switching and signal conditioning for capacitive occupant detection sensors in front passenger seats.

IC Role / Device Role / Timing Role: Precision low-leakage switch (<1µA IDSS) isolating sensor electrodes during measurement cycles to prevent parasitic coupling.

Use Value: 1.0µA max IDSS at 60V ensures <0.1% measurement error in femtofarad-level capacitance sensing, meeting ISO 26262 ASIL-B requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN62D2UTQ-7	Same die, but in SOT-363 package (larger footprint, higher R_θJA = 220°C/W)	Limited to non-automotive industrial use due to lack of AEC-Q101 qualification and PPAP support	Select only if board layout permits larger package and automotive compliance is not required.
NTJD4152PZT5G	Higher R_DS(ON) (3.5Ω @ 4.5V), no integrated gate protection diodes, lower V_GS(TH) (0.35V min)	Not AEC-Q101 qualified; unsuitable for safety-critical automotive functions requiring PPAP documentation	Acceptable for consumer-grade portable devices where gate protection and qualification are not mandated.

Compared with DMN62D2UVQ-7, DMN62D2UTQ-7 trades automotive compliance for slightly better thermal margin in non-automotive layouts, while NTJD4152PZT5G offers lower threshold voltage but lacks gate protection and qualification-making DMN62D2UVQ-7 the sole choice for AEC-Q101-compliant dual-channel switching in space-constrained automotive modules.

Availability

DMN62D2UVQ-7 is available at Aetrix Electronics and suitable for automotive motor control, LED backlight dimming, and body control module power management requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for DMN62D2UVQ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets with over 50 years of semiconductor design expertise.

The DMN62D2UVQ-7 belongs to Diodes' AEC-Q101-qualified automotive MOSFET product line, engineered specifically for space-constrained, thermally demanding automotive subsystems requiring dual-channel integration and robust transient immunity.

FAQ

Is DMN62D2UVQ-7 suitable for high-side switching configurations?

No-DMN62D2UVQ-7 is a dual N-channel MOSFET with source terminals referenced to ground in standard layout. High-side switching requires either P-channel devices or N-channel with floating gate drivers. Its SOT563 pinout provides independent S1/S2 nodes but no common drain or bootstrap-capable structure.

What is the maximum safe operating area (SOA) for pulsed operation?

At T_A = +25°C on a 1-inch copper board, the SOA supports 1.25A pulsed drain current for 10µs at 60V (duty cycle ≤1%). Derating is required above 25°C ambient; Figure 12 in DS44916 shows SOA boundaries for pulse widths from 10µs to DC, with thermal limits governed by R_θJA = 156°C/W.

Does DMN62D2UVQ-7 require external gate resistors for EMI suppression?

Yes-while the device includes internal gate protection diodes, a series gate resistor (typically 5–22Ω) is recommended to dampen ringing caused by trace inductance and reduce dv/dt-induced shoot-through in half-bridge configurations. Layout-dependent parasitics make external tuning essential for EMC compliance.

Can DMN62D2UVQ-7 be used in parallel for higher current handling?

No-its positive temperature coefficient of R_DS(ON) (Figure 6) supports limited current sharing, but mismatched V_GS(TH) (±0.5V) and unequal thermal coupling in SOT563 make intentional paralleling unreliable. For >450mA, select a single higher-current device or redesign with dedicated high-current MOSFETs.

DMN62D2UVQ-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: SOT-563, SOT-666

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 N-Channel

FET Feature:: -

Drain to Source Voltage (Vdss):: 60V

Current - Continuous Drain (Id) @ 25°C:: 450mA (Ta)

Rds On (Max) @ Id, Vgs:: 2Ohm @ 50mA, 5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 0.8nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:: 41pF @ 30V

Power - Max:: 500µW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-563

DMN62D2UVQ-7 FAQ

1.How can I place an order for DMN62D2UVQ-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN62D2UVQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN62D2UVQ-7 reliable?

The price and inventory of DMN62D2UVQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN62D2UVQ-7 is usually 5 days.

3.What payment methods are accepted for DMN62D2UVQ-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN62D2UVQ-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN62D2UVQ-7?

DMN62D2UVQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN62D2UVQ-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN62D2UVQ-7?

For technical support, including DMN62D2UVQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN62D2UVQ-7 requirements.

6.How does Aetrix verify that DMN62D2UVQ-7 is sourced from the original manufacturer or authorized distributors?

All DMN62D2UVQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN62D2UVQ-7 meets industry standards.

7.What is the process for return or replacement of DMN62D2UVQ-7?

All DMN62D2UVQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN62D2UVQ-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN62D2UVQ-7 part is unused and in its original packaging.

Return procedure for DMN62D2UVQ-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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