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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Diodes Incorporated DMN62D2UVT-13

Name: DMN62D2UVT-13
Brand: Diodes Incorporated
SKU: DMN62D2UVT-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN62D2UVT-13

Manufacturer:: Diodes Incorporated

Category:: FET, MOSFET Arrays

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: DMN62D2UVT-13.pdf

Description:: MOSFET 2N-CH 60V 0.455A TSOT26

Quantity:: RFQ Add To RFQ list

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Inventory:4,741

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Product details

Overview

DMN62D2UVT-13 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in TSOT26 package, featuring R_DS(ON) = 2.0 Ω @ V_GS = 5.0 V, V_GS(TH) = 0.5–1.0 V, and I_D = 455 mA at T_A = +25°C. It serves as a low-voltage load switch in portable power management, battery protection circuits, and USB port power control.

For engineers reviewing the DMN62D2UVT-13 datasheet, DMN62D2UVT-13 pinout, DMN62D2UVT-13 application, or DMN62D2UVT-13 equivalent, key selection criteria include gate threshold voltage compatibility with 1.8 V/2.5 V logic, low R_DS(ON) at low V_GS, thermal resistance (R_θJA = 254 °C/W), ESD protection, and TSOT26 footprint constraints.

Technical Context

This MOSFET employs a trench-gate process optimized for low gate charge (Q_g = 0.8 nC) and fast switching (t_r = 9.7 ns, t_f = 19.5 ns), enabling efficient operation in high-frequency DC-DC converter synchronous rectification and PWM-controlled LED dimming drivers.

Its ultra-low V_GS(TH) (0.5–1.0 V) ensures reliable turn-on with 1.8 V microcontroller GPIOs, while integrated body diode (V_SD = 0.7–1.4 V @ I_S = 115 mA) supports bidirectional current handling in reverse-polarity protection and OR-ing applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - supports input rails up to 48 V systems with margin
R_DS(ON)	2.0 Ω @ V_GS = 5.0 V - limits conduction loss to ≤460 mW at 455 mA
V_GS(TH)	0.5–1.0 V - enables direct drive from 1.8 V logic without level-shifting
Q_g	0.8 nC - reduces gate drive power and enables >1 MHz switching
C_iss	41 pF - minimizes Miller effect and improves noise immunity
P_D	0.5 W (FR-4, 2 oz Cu) - defines max continuous power on standard PCB
T_J Range	−55 to +150 °C - qualified for industrial and extended-temperature environments

Pinout & Package

Package: TSOT26 - 6-pin ultra-thin surface-mount package (2.9 × 1.6 × 0.6 mm), RoHS-compliant, halogen-free, moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
G1, G2	Parallel gate terminals	Reduces gate resistance (R_g = 52 Ω) and improves switching consistency
S1, S2	Parallel source terminals	Lowers source inductance and enhances current sharing in high-di/dt paths
D1, D2	Parallel drain terminals	Increases current capacity and thermal dissipation via dual-side routing

Key Features

Feature	Design Value
Low gate threshold voltage	V_GS(TH) down to 0.5 V enables direct interface with 1.8 V I/O domains
Ultra-low input capacitance	C_iss = 41 pF reduces gate drive energy and EMI generation
ESD protection	HBM rating ≥2 kV per JESD22-A114 - eliminates need for external TVS in many layouts
Thermally enhanced layout	Dual drain/source/gate pins improve heat spreading across PCB copper area
Green packaging	Halogen- and antimony-free compound (<900 ppm Br/Cl, <1000 ppm Sb) meets automotive and industrial eco-standards

Applications

USB Power Switching

Battery Protection Circuit

Use Scenario: Controlling power delivery to downstream USB peripherals in portable medical devices.

IC Role / Device Role / Timing Role: Load switch isolating VBUS during fault conditions or sleep mode.

Use Value: Low R_DS(ON) at 1.8 V gate drive minimizes voltage drop and preserves USB 2.0 signaling integrity.

Use Scenario: Reverse-current blocking and over-discharge prevention in single-cell Li-ion packs.

IC Role / Device Role / Timing Role: Back-to-back configured N-MOSFET for bidirectional current control.

Use Value: Matched low V_GS(TH) ensures symmetrical turn-on and prevents sneak paths during cell balancing.

LED Dimming Driver

Industrial Sensor Interface

Use Scenario: PWM-controlled current sink for status LEDs in factory automation controllers.

IC Role / Device Role / Timing Role: High-speed switching element modulating LED current at 1–5 kHz.

Use Value: Fast t_r/t_f (9.7 ns/19.5 ns) eliminates visible flicker and supports precise duty-cycle resolution.

Use Scenario: Isolating analog sensor outputs (e.g., pressure transducers) from shared supply rails.

IC Role / Device Role / Timing Role: Signal-path power gate preventing cross-talk during sensor calibration cycles.

Use Value: Low leakage (I_DSS ≤ 1.0 µA) avoids offset drift in µV-level instrumentation amplifiers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN62D2UVTQ	Automotive-grade variant (AEC-Q101 qualified); identical electrical specs but tighter parametric screening and traceability	Required for automotive infotainment power sequencing and ADAS subsystems	Select when ISO/TS 16949 production and PPAP documentation are mandatory
AO3400	Higher R_DS(ON) (2.7 Ω @ 4.5 V), no dual-pin configuration, C_iss = 530 pF	Acceptable for lower-frequency, non-critical consumer applications only	Choose only if cost is primary constraint and thermal margin exceeds 40°C

Compared with DMN62D2UVTQ, this part offers identical performance with non-automotive qualification; versus AO3400, it delivers 26% lower R_DS(ON), 92% lower C_iss, and superior thermal robustness in space-constrained designs.

Availability

DMN62D2UVT-13 is available at Aetrix Electronics and suitable for USB power switching, battery protection circuits, and industrial sensor interfaces requiring stable component supply and long-term manufacturability.

Supply support for DMN62D2UVT-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management and signal integrity solutions.

The DMN62D2UVT belongs to Diodes' "Ultra-Low Threshold MOSFET" product line, engineered specifically for direct-drive compatibility with sub-2.0 V logic families in portable and energy-sensitive systems.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The DMN62D2UVT-13 supports 364 mA continuous drain current at T_A = +70°C with V_GS = 5 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TSOT26 package on standard FR-4 PCBs with 2 oz copper.

Does this MOSFET require an external gate resistor for stability?

No external gate resistor is required for basic switching stability due to its low gate resistance (52 Ω) and minimal C_iss/C_rss ratio. However, a 10–47 Ω series resistor is recommended when driving from high-impedance sources to damp ringing caused by PCB trace inductance.

Can DMN62D2UVT-13 be used in linear regulation mode?

It is not recommended for sustained linear regulation due to limited power dissipation (0.5 W) and thermal resistance (254 °C/W). Operation in the linear region should be restricted to brief transient conditions or pulsed loads with strict thermal monitoring.

How does the dual-pin configuration affect PCB layout?

The parallel G1/G2, S1/S2, and D1/D2 terminals reduce effective lead inductance and improve current distribution. Layout requires symmetric trace routing to all pins-uneven connections increase localized heating and degrade R_DS(ON) matching between internal die segments.

DMN62D2UVT-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 N-Channel

FET Feature:: -

Drain to Source Voltage (Vdss):: 60V

Current - Continuous Drain (Id) @ 25°C:: 455mA (Ta)

Rds On (Max) @ Id, Vgs:: 2Ohm @ 50mA, 5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 0.8nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:: 41pF @ 30V

Power - Max:: 500mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TSOT-26

DMN62D2UVT-13 FAQ

1.How can I place an order for DMN62D2UVT-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN62D2UVT-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN62D2UVT-13 reliable?

The price and inventory of DMN62D2UVT-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN62D2UVT-13 is usually 5 days.

3.What payment methods are accepted for DMN62D2UVT-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN62D2UVT-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN62D2UVT-13?

DMN62D2UVT-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN62D2UVT-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN62D2UVT-13?

For technical support, including DMN62D2UVT-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN62D2UVT-13 requirements.

6.How does Aetrix verify that DMN62D2UVT-13 is sourced from the original manufacturer or authorized distributors?

All DMN62D2UVT-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN62D2UVT-13 meets industry standards.

7.What is the process for return or replacement of DMN62D2UVT-13?

All DMN62D2UVT-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN62D2UVT-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN62D2UVT-13 part is unused and in its original packaging.

Return procedure for DMN62D2UVT-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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