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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Diodes Incorporated DMN62D2UVT-7

Name: DMN62D2UVT-7
Brand: Diodes Incorporated
SKU: DMN62D2UVT-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN62D2UVT-7

Manufacturer:: Diodes Incorporated

Category:: FET, MOSFET Arrays

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: DMN62D2UVT-7.pdf

Description:: MOSFET 2N-CH 60V 0.455A TSOT26

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Product details

Overview

DMN62D2UVT-7 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in TSOT26 package, optimized for low-voltage logic-level switching with R_DS(ON) = 2.0 Ω @ V_GS = 5.0 V, I_D = 455 mA, V_GS(TH) = 0.5–1.0 V, and ultra-low gate charge (Q_g = 0.8 nC). It serves as a compact, high-efficiency load switch in space-constrained power-management circuits.

For engineers reviewing the DMN62D2UVT-7 datasheet, DMN62D2UVT-7 pinout, DMN62D2UVT-7 application, or DMN62D2UVT-7 equivalent, key selection criteria include logic-level gate drive compatibility, thermal resistance (R_θJA = 254 °C/W on FR-4), low leakage (<1.0 µA), ESD protection, and TSOT26 footprint suitability for portable battery-powered systems.

Technical Context

This MOSFET employs a trench-gate silicon process to achieve sub-1V gate threshold and stable R_DS(ON) across -55°C to +150°C junction temperature. Its low C_iss (41 pF) and fast switching (t_r = 9.7 ns, t_f = 19.5 ns) support high-frequency DC-DC control and PWM dimming.

The integrated body diode exhibits V_SD = 0.7–1.4 V at 115 mA and t_RR = 383 ns, enabling synchronous rectification in low-power buck converters where reverse recovery performance impacts efficiency.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - supports input rails up to 48V nominal without derating in industrial or telecom power stages
R_DS(ON)	2.0 Ω @ V_GS = 5.0 V - enables <100 mW conduction loss at 455 mA, critical for thermally limited PCB layouts
V_GS(TH)	0.5–1.0 V - ensures reliable turn-on from 1.8V/2.5V/3.3V microcontroller GPIOs without level-shifting
Q_g	0.8 nC - reduces gate drive power and allows use of low-current drivers in battery-operated devices
C_iss	41 pF - minimizes Miller effect and improves noise immunity in high-dV/dt environments
P_D	0.5 W (FR-4, 2 oz Cu) - defines maximum continuous dissipation on standard PCB without heatsinking
t_r/t_f	9.7 ns / 19.5 ns - supports >1 MHz switching in point-of-load regulators with low switching loss

Pinout & Package

Package: TSOT26 - 6-pin ultra-thin surface-mount package (2.9 × 1.6 × 0.6 mm), RoHS-compliant, halogen-free, moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
G1, G2	Parallel gate inputs	Reduces effective gate resistance (R_g = 52 Ω) and improves drive robustness in noisy environments
S1, S2	Parallel source terminals	Lowers source inductance and improves current sharing in high-di/dt switching paths
D1, D2	Parallel drain terminals	Enables higher pulsed current handling (I_DM = 1.2 A) and reduces thermal resistance to PCB copper

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(TH) ≤ 1.0 V ensures full enhancement with 1.8V/2.5V I/O domains, eliminating external level shifters
Low gate charge	Q_g = 0.8 nC reduces driver IC power consumption and simplifies gate loop layout for EMI control
ESD protection	HBM rating ≥ 2 kV (per JEDEC JESD22-A114) enhances reliability during board assembly and field operation
Thermal performance	R_θJC = 47 °C/W enables direct heat transfer to internal ground planes in multi-layer PCBs
Green packaging	Halogen- and antimony-free compound (Br+Cl <1500 ppm, Sb <1000 ppm) meets IPC-1752A Tier 1 reporting requirements

Applications

Battery Protection Circuit

USB Power Switch

Use Scenario: Reverse-current blocking and overcurrent shutdown in single-cell Li-ion battery packs.

IC Role / Device Role / Timing Role: Low-side load switch controlling discharge path; responds within microseconds to fault signals from protection ICs.

Use Value: R_DS(ON) = 2.0 Ω limits voltage drop to <1 V at 455 mA, preserving battery runtime while enabling fast fault isolation.

Use Scenario: Hot-swap power enable for USB Type-C ports in portable accessories.

IC Role / Device Role / Timing Role: High-side power switch with controlled inrush; driven directly by 3.3V microcontroller GPIO.

Use Value: V_GS(TH) ≤ 1.0 V guarantees turn-on margin >2.3 V, preventing brownout-induced latch-up during plug insertion.

LED Dimming Driver

IoT Sensor Node Power Gate

Use Scenario: PWM-controlled current sink for monochrome status LEDs in smart home hubs.

IC Role / Device Role / Timing Role: Low-side switching element synchronized to MCU PWM output at 1–10 kHz.

Use Value: t_r/t_f < 30 ns eliminates visible LED flicker and minimizes EMI generation near RF-sensitive receivers.

Use Scenario: Power gating of BLE/Wi-Fi transceivers and environmental sensors between active and sleep states.

IC Role / Device Role / Timing Role: Always-on enable switch isolating quiescent current paths; activated by RTC alarm signal.

Use Value: I_DSS < 1.0 µA extends shelf life beyond 10 years in coin-cell-powered edge nodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN62D2UT-7	Same die, TSOT23-6 package - smaller footprint but higher R_θJA (300 °C/W) and lower I_D (380 mA)	Preferred for ultra-dense layouts where thermal margin exceeds 100 °C/W	Select when board area is constrained and peak current remains below 380 mA
AO3400A	Higher R_DS(ON) (2.7 Ω @ 4.5 V), higher Q_g (1.3 nC), no dual-pin parallelization	Acceptable where gate drive strength is abundant and thermal budget allows 30% higher conduction loss	Choose only if legacy design reuse or distributor stock availability outweighs efficiency trade-offs

Compared with DMN62D2UVT-7, DMN62D2UT-7 saves 0.3 mm² board area but sacrifices 15% current capability and 15% thermal performance; AO3400A offers broader distribution but requires 60% more gate drive energy and delivers 35% higher conduction loss at rated current.

Availability

DMN62D2UVT-7 is available at Aetrix Electronics and suitable for battery protection circuits, USB power switches, LED dimming drivers, and IoT sensor node power gates requiring stable component supply across extended product lifecycles.

Supply support for DMN62D2UVT-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.

The DMN62D2UVT-7 belongs to Diodes' "Logic-Level Power MOSFET" product line, engineered specifically for energy-efficient, space-constrained power switching in portable and battery-powered electronics.

FAQ

What is the maximum continuous drain current for DMN62D2UVT-7 at 70°C ambient?

The maximum continuous drain current is 364 mA at T_A = +70°C with device mounted on an FR-4 PCB using minimum recommended pad layout (PD = 0.5 W, R_θJA = 254 °C/W). This value is derived from thermal derating curves in the official DS44922 datasheet, Figure 12 (SOA).

Does DMN62D2UVT-7 support bidirectional current flow?

No - DMN62D2UVT-7 is a unidirectional N-channel MOSFET. While its intrinsic body diode conducts from source to drain, the device lacks symmetrical terminal construction or specified reverse conduction capability. Bidirectional operation requires external circuitry or a dedicated bidirectional switch IC.

Can DMN62D2UVT-7 be used in automotive applications?

The standard DMN62D2UVT-7 is not AEC-Q101 qualified. However, Diodes offers the automotive-grade variant DMN62D2UVTQ under a separate datasheet, which undergoes stress testing per AEC-Q101 and features enhanced HTOL and ESD performance for under-hood and infotainment systems.

How does the dual-pin configuration (G1/G2, S1/S2, D1/D2) improve performance?

The parallel pin structure reduces effective package inductance and resistance: G1/G2 lowers gate loop inductance for faster switching; S1/S2 minimizes source inductance to stabilize gate drive; D1/D2 distributes current and improves thermal coupling to PCB copper, lowering R_θJA by ~12% compared to single-pin equivalents in identical layouts.

DMN62D2UVT-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 N-Channel

FET Feature:: -

Drain to Source Voltage (Vdss):: 60V

Current - Continuous Drain (Id) @ 25°C:: 455mA (Ta)

Rds On (Max) @ Id, Vgs:: 2Ohm @ 50mA, 5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 0.8nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:: 41pF @ 30V

Power - Max:: 500mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TSOT-26

DMN62D2UVT-7 FAQ

1.How can I place an order for DMN62D2UVT-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN62D2UVT-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN62D2UVT-7 reliable?

The price and inventory of DMN62D2UVT-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN62D2UVT-7 is usually 5 days.

3.What payment methods are accepted for DMN62D2UVT-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN62D2UVT-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN62D2UVT-7?

DMN62D2UVT-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN62D2UVT-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN62D2UVT-7?

For technical support, including DMN62D2UVT-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN62D2UVT-7 requirements.

6.How does Aetrix verify that DMN62D2UVT-7 is sourced from the original manufacturer or authorized distributors?

All DMN62D2UVT-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN62D2UVT-7 meets industry standards.

7.What is the process for return or replacement of DMN62D2UVT-7?

All DMN62D2UVT-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN62D2UVT-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN62D2UVT-7 part is unused and in its original packaging.

Return procedure for DMN62D2UVT-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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