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Diodes Incorporated DMN62D2UVTQ-13
- Part No.:
- DMN62D2UVTQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
DMN62D2UVTQ-13.pdf
- Description:
- MOSFET 2N-CH 60V 0.455A TSOT26
- Quantity:
- Payment:
- Shipping:
Inventory:8,317
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Product details
Overview
DMN62D2UVTQ-13 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in TSOT26 package, qualified to AEC-Q101 for automotive use. It delivers RDS(ON) = 2.0 Ω @ VGS = 5.0 V, 455 mA continuous drain current at +25°C, and gate threshold voltage of 0.5–1.0 V - enabling low-voltage logic-level switching in power-management and interface circuits.
For engineers reviewing the DMN62D2UVTQ-13 datasheet, DMN62D2UVTQ-13 pinout, DMN62D2UVTQ-13 application, or DMN62D2UVTQ-13 equivalent, key selection criteria include its ultra-low VGS(TH), 1.2 nC total gate charge, 41 pF input capacitance, AEC-Q101 qualification, and TSOT26 thermal performance (RθJA = 143 °C/W with 1-inch² copper).
Technical Context
This MOSFET operates as a single N-channel enhancement-mode switch with fully specified gate-drive compatibility down to 1.8 V. Its low 0.5–1.0 V VGS(TH) enables direct interfacing with 1.8 V/2.5 V microcontrollers, while its 47 °C/W RθJC supports thermal management in space-constrained automotive modules.
The device integrates an intrinsic body diode with 0.7–1.4 V forward voltage at 115 mA and exhibits 383 ns reverse-recovery time. Dynamic parameters - including 0.8 nC Qg, 9.7 ns tr, and 22.6 ns td(off) - confirm suitability for medium-speed switching in load-switching and power-rail control applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - supports automotive 42 V nominal systems with margin for transients |
| RDS(ON) | 2.0 Ω @ VGS = 5.0 V - ensures <100 mW conduction loss at 455 mA |
| VGS(TH) | 0.5–1.0 V - enables reliable turn-on with 1.8 V I/O logic without level-shifting |
| Qg | 0.8 nC - reduces gate-drive power and enables efficient 1–10 MHz switching |
| ID (continuous) | 455 mA @ TA = +25°C - suitable for low-power load switching in ECUs and sensors |
| Ciss | 41 pF - limits capacitive loading on driving GPIOs and reduces EMI risk |
| PD | 0.9 W (with 1-inch² copper) - defines maximum steady-state power handling in PCB layout |
Pinout & Package
Package: TSOT26 - 6-pin ultra-thin surface-mount package (2.9 mm × 1.6 mm × 0.6 mm), RoHS-compliant, halogen-free, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G1, G2 | Parallel gate terminals | Reduces effective gate resistance (Rg = 52 Ω) and improves switching consistency |
| S1, S2 | Parallel source terminals | Lowers source inductance and improves current sharing in high-di/dt operation |
| D1, D2 | Parallel drain terminals | Enhances current-carrying capacity and thermal spreading across package leads |
Key Features
| Feature | Design Value |
|---|---|
| Low gate threshold voltage | VGS(TH) down to 0.5 V enables robust turn-on with 1.8 V logic outputs |
| Low input capacitance | Ciss = 41 pF minimizes drive strength requirements and timing uncertainty |
| Fast switching speed | tr = 9.7 ns and tf = 19.5 ns support >1 MHz PWM control in power rails |
| AEC-Q101 qualification | Validated for automotive temperature range (−55°C to +150°C) and PPAP-ready |
| ESD protection | HBM rating ≥2 kV ensures reliability during board assembly and handling |
Applications
| Body Control Module Switching | Automotive Sensor Power Gate |
|---|---|
Use Scenario: Controlling 12 V power to interior lighting, door locks, or HVAC actuators in BCMs. IC Role / Device Role / Timing Role: Low-side load switch managing up to 455 mA DC loads with fast enable/disable transitions. Use Value: Ultra-low VGS(TH) eliminates need for external gate drivers, reducing BOM count and PCB area. | Use Scenario: Enabling/disabling power to analog sensor ICs (e.g., pressure, temperature) in engine compartments. IC Role / Device Role / Timing Role: Precision power-gating element with leakage <1 µA at VDS = 60 V to preserve battery life. Use Value: 0.9 W power dissipation capability with 143 °C/W RθJA allows stable operation at +105°C ambient. |
| Infotainment System Interface | ADAS Camera Power Sequencing |
Use Scenario: Isolating USB, CAN, or LIN interface lines from main SoC during sleep mode. IC Role / Device Role / Timing Role: General-purpose signal-path switch with low RDS(ON) and minimal capacitance coupling. Use Value: Ciss = 41 pF and Crss = 4.2 pF prevent signal integrity degradation on high-speed buses. | Use Scenario: Controlled power-up/down sequencing of image sensor and ISP in rear-view or surround-view cameras. IC Role / Device Role / Timing Role: Soft-start-capable power switch with controlled turn-on via gate resistor tuning. Use Value: 0.8 nC Qg enables precise timing control using standard MCU GPIOs without auxiliary circuitry. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN62D2UVTQ-7 | Identical die and specs; differs only in reel quantity (3,000 vs. 10,000 units) | No functional difference; selected based on procurement volume and inventory planning | Choose -7 for prototyping or low-volume production; -13 for high-volume manufacturing |
| DMN62D2UWQ-7 | Same die but in WDFN-6 (2×2 mm) package; RθJA = 100 °C/W (superior thermal performance) | Better suited for thermally constrained layouts where PCB copper area is limited | Select when junction temperature must stay below 125°C under sustained 400 mA load |
Compared with DMN62D2UVTQ-13, the -7 variant offers identical electrical behavior in smaller batch sizes, while DMN62D2UWQ-7 provides lower thermal resistance in a different footprint - enabling higher power density where board space permits.
Availability
DMN62D2UVTQ-13 is available at Aetrix Electronics and suitable for automotive body control modules, sensor power gating, and infotainment interface switching requiring stable component supply, AEC-Q101 compliance, and long-term lifecycle support.
Supply support for DMN62D2UVTQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.
The DMN62D2UVTQ belongs to Diodes' AEC-Q101-qualified logic-level MOSFET product line, engineered specifically for low-voltage, low-power automotive load switching where space, thermal headroom, and qualification rigor are critical.
FAQ
What is the maximum continuous drain current at +70°C ambient?
The DMN62D2UVTQ-13 supports 364 mA continuous drain current at TA = +70°C, per the datasheet's derating curve. This value reflects thermal limitation due to RθJA = 143 °C/W with 1-inch² copper; actual current depends on PCB layout and airflow.
Is this MOSFET suitable for reverse-polarity protection?
No - the DMN62D2UVTQ-13 is a single N-channel MOSFET with no integrated back-to-back configuration or dedicated protection circuitry. Its body diode conducts in reverse direction, making it unsuitable for standalone reverse-polarity protection without external design modifications.
Does the TSOT26 package support hand-soldering?
Yes - the TSOT26 package is compatible with reflow soldering per J-STD-020 Level 1 moisture sensitivity, and its 0.95 mm pitch and exposed pad allow manual soldering using fine-tip irons and flux, though thermal profiling is recommended to avoid die stress during repeated heating.
What is the guaranteed minimum VGS(TH) across temperature?
The datasheet guarantees VGS(TH) ≥ 0.5 V at TJ = −55°C to +150°C (Fig. 8), with typical values rising to ~0.8 V at +125°C. This ensures turn-on remains assured even under extreme cold-start conditions in automotive environments.
DMN62D2UVTQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 455mA (Ta)
- Rds On (Max) @ Id, Vgs:
- 2Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 41pF @ 30V
- Power - Max:
- 500mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TSOT-26
DMN62D2UVTQ-13 FAQ
1.How can I place an order for DMN62D2UVTQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN62D2UVTQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN62D2UVTQ-13 reliable?
The price and inventory of DMN62D2UVTQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN62D2UVTQ-13 is usually 5 days.
3.What payment methods are accepted for DMN62D2UVTQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN62D2UVTQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN62D2UVTQ-13?
DMN62D2UVTQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN62D2UVTQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN62D2UVTQ-13?
For technical support, including DMN62D2UVTQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN62D2UVTQ-13 requirements.
6.How does Aetrix verify that DMN62D2UVTQ-13 is sourced from the original manufacturer or authorized distributors?
All DMN62D2UVTQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN62D2UVTQ-13 meets industry standards.
7.What is the process for return or replacement of DMN62D2UVTQ-13?
All DMN62D2UVTQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN62D2UVTQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN62D2UVTQ-13 part is unused and in its original packaging.
Return procedure for DMN62D2UVTQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMN62D2UVTQ-13 Tags
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SSM6N7002KFU,LF
Toshiba Semiconductor and Storage
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2N7002DW-7-F
Diodes Incorporated
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SSM6L56FE,LM
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2N7002DWH6327XTSA1
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2N7002BKS,115
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DMG6602SVT-7
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