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Diodes Incorporated DMN62D2UVTQ-7
- Part No.:
- DMN62D2UVTQ-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
DMN62D2UVTQ-7.pdf
- Description:
- MOSFET 2N-CH 60V 0.455A TSOT26
- Quantity:
- Payment:
- Shipping:
Inventory:2,594
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Product details
Overview
DMN62D2UVTQ from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET qualified to AEC-Q101 for automotive use, with RDS(ON) = 2.0 Ω @ VGS = 5.0 V, ID = 455 mA at TA = +25°C, and ultra-low gate threshold voltage (VGS(TH) = 0.5–1.0 V), deployed in power-management and general-purpose interfacing switches.
For engineers reviewing the DMN62D2UVTQ datasheet, DMN62D2UVTQ pinout, DMN62D2UVTQ application, or DMN62D2UVTQ equivalent, this part supports low-voltage logic-driven switching in space-constrained automotive subsystems where low gate drive voltage, fast turn-on/off, and robust thermal performance under intermittent load are critical selection criteria.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low VGS(TH) and stable RDS(ON) across temperature, enabling direct interface with 1.8 V/2.5 V microcontroller GPIOs without level-shifting. Its Ciss = 41 pF and Qg = 0.8 nC support efficient high-frequency switching up to several hundred kHz.
The device integrates an intrinsic body diode with VSD = 0.7–1.4 V @ IS = 115 mA and tRR = 383 ns, suitable for freewheeling and reverse-current blocking in low-power DC-DC stages and load-switch configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Withstands up to 60 V drain-source voltage, supporting 24 V automotive rail and transient surge tolerance. |
| RDS(ON) | 2.0 Ω @ VGS = 5.0 V - Enables <100 mW conduction loss at 455 mA, suitable for low-duty-cycle load switching. |
| VGS(TH) | 0.5–1.0 V - Guaranteed turn-on with 1.8 V logic, eliminating need for external gate drivers in MCU-controlled switches. |
| ID (max) | 455 mA @ TA = +25°C - Continuous current rating sufficient for sensor biasing, LED drivers, and small solenoid control. |
| Ciss | 41 pF - Low input capacitance reduces gate drive power and improves switching speed in battery-powered modules. |
| tF | 19.5 ns - Fast fall time minimizes switching transition losses in PWM-based power management circuits. |
Pinout & Package
Package: TSOT26 - 6-pin ultra-thin surface-mount package (2.9 × 1.6 × 0.6 mm), rated for moisture sensitivity Level 1, RoHS-compliant, halogen-free, and qualified for automotive reflow profiles.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G1, G2 | Parallel gate terminals | Reduced gate resistance (Rg = 52 Ω) and improved gate drive uniformity for consistent turn-on behavior. |
| S1, S2 | Parallel source terminals | Lower source inductance and enhanced current sharing, critical for minimizing shoot-through risk in half-bridge layouts. |
| D1, D2 | Parallel drain terminals | Increased current-carrying capacity and reduced thermal resistance (RθJC = 47 °C/W) via dual-drain routing. |
Key Features
| Feature | Design Value |
|---|---|
| Low gate threshold voltage | VGS(TH) down to 0.5 V enables reliable switching from 1.8 V I/O rails without external level shifters. |
| Ultra-low input capacitance | Ciss = 41 pF reduces gate charge demand and dynamic power loss in high-frequency control loops. |
| Fast switching speed | tR = 9.7 ns and tF = 19.5 ns support >100 kHz PWM operation with minimal dead-time overhead. |
| AEC-Q101 qualification | Validated for automotive temperature range (−55°C to +150°C) and PPAP-capable manufacturing in IATF 16949 facilities. |
Applications
| Automotive Body Control Module (BCM) | Infotainment Power Sequencing |
|---|---|
|
Use Scenario: Controlling LED map lights, door lock actuators, and window motor enable lines in BCM subassemblies. IC Role / Device Role / Timing Role: Low-side load switch providing overcurrent-protected, logic-level–driven power gating. Use Value: Eliminates discrete level-shifter components and reduces BOM count while maintaining AEC-Q101 compliance. |
Use Scenario: Enabling/disabling USB-C port power, display backlight, and audio amplifier rails during system boot-up and sleep transitions. IC Role / Device Role / Timing Role: Precision sequencing switch with controlled rise/fall times to prevent supply rail collapse or latch-up. Use Value: 19.5 ns fall time ensures clean power-down timing alignment across multiple subsystems. |
| Engine Control Unit (ECU) Sensor Biasing | ADAS Camera Module Power Management |
|
Use Scenario: Providing regulated bias current to Hall-effect sensors, crankshaft position sensors, and knock sensors. IC Role / Device Role / Timing Role: Constant-current source configured via external resistor, leveraging low RDS(ON) stability over temperature. Use Value: RDS(ON) variation ≤15% from −40°C to +125°C ensures consistent sensor excitation across ambient conditions. |
Use Scenario: Isolating image sensor and ISP power domains during camera initialization and thermal throttling events. IC Role / Device Role / Timing Role: High-reliability load switch with ESD protection (HBM >2 kV) and low leakage (<1 µA). Use Value: Sub-µA IDSS prevents standby current leakage that would compromise ADAS module sleep current budgets. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel low-voltage logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN62D2UWQ-7 | Same die, TSOT26 package, but rated for industrial (not AEC-Q101) use; no PPAP support. | Lacks automotive qualification documentation and change-control traceability. | Select when AEC-Q101 is not required and cost optimization is prioritized. |
| NTMFD6285L | Higher VDSS (100 V), higher RDS(ON) (3.2 Ω @ 4.5 V), larger SO-8FL package. | Designed for higher-voltage industrial loads; incompatible pinout and footprint. | Choose only if system requires >60 V breakdown margin and board layout allows SO-8FL rework. |
Compared with DMN62D2UWQ-7, the DMN62D2UVTQ provides documented automotive qualification and production traceability; versus NTMFD6285L, it delivers lower gate drive voltage compatibility and smaller footprint at the expense of voltage headroom.
Availability
DMN62D2UVTQ is available at Aetrix Electronics and suitable for automotive body electronics, infotainment power sequencing, and ADAS camera module designs requiring stable component supply, full AEC-Q101 documentation, and long-term lifecycle assurance.
Supply support for DMN62D2UVTQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and consumer markets since 1959.
The DMN62D2UVTQ belongs to Diodes' AEC-Q101-qualified logic-level MOSFET product line, engineered specifically for low-voltage, high-reliability automotive power switching where gate drive simplicity and thermal robustness are essential.
FAQ
Is DMN62D2UVTQ suitable for 1.8 V microcontroller GPIO direct drive?
Yes. With VGS(TH) guaranteed down to 0.5 V and RDS(ON) = 4.0 Ω @ VGS = 1.8 V, the device fully turns on using standard 1.8 V logic outputs. No external level shifter is needed, and typical ID remains ≥358 mA under those conditions.
What is the maximum continuous power dissipation at 70°C ambient?
At TA = +70°C, the device supports 364 mA continuous drain current (per datasheet Note 6), corresponding to PD = 0.9 W when mounted on a 1-inch square copper pad. Derating follows RθJA = 143 °C/W under that layout condition.
Does DMN62D2UVTQ include integrated ESD protection?
Yes. The device incorporates on-chip ESD protection rated to >2 kV HBM per JESD22-A114, confirmed in the "Features and Benefits" section and validated during AEC-Q101 stress testing. This eliminates need for external TVS diodes in most low-energy signal paths.
Can DMN62D2UVTQ be used in parallel configurations?
Yes - its dual-terminal design (G1/G2, S1/S2, D1/D2) is explicitly intended for paralleling within a single device to reduce effective RDS(ON) and thermal resistance. External paralleling with other units is not recommended due to mismatched threshold voltages and thermal coupling challenges.
DMN62D2UVTQ-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 455mA (Ta)
- Rds On (Max) @ Id, Vgs:
- 2Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 41pF @ 30V
- Power - Max:
- 500mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TSOT-26
DMN62D2UVTQ-7 FAQ
1.How can I place an order for DMN62D2UVTQ-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN62D2UVTQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN62D2UVTQ-7 reliable?
The price and inventory of DMN62D2UVTQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN62D2UVTQ-7 is usually 5 days.
3.What payment methods are accepted for DMN62D2UVTQ-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN62D2UVTQ-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN62D2UVTQ-7?
DMN62D2UVTQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN62D2UVTQ-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN62D2UVTQ-7?
For technical support, including DMN62D2UVTQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN62D2UVTQ-7 requirements.
6.How does Aetrix verify that DMN62D2UVTQ-7 is sourced from the original manufacturer or authorized distributors?
All DMN62D2UVTQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN62D2UVTQ-7 meets industry standards.
7.What is the process for return or replacement of DMN62D2UVTQ-7?
All DMN62D2UVTQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN62D2UVTQ-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN62D2UVTQ-7 part is unused and in its original packaging.
Return procedure for DMN62D2UVTQ-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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