Diodes Incorporated DMN62D2UW-13

Overview

DMN62D2UW-13 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in SOT323 package, optimized for low R_DS(ON) (2.0Ω @ V_GS = 5V) and fast switching in space-constrained power-management circuits. It delivers 391mA continuous drain current at +25°C and features ESD protection, low input capacitance (41pF), and operation across –55°C to +150°C junction temperature.

For engineers reviewing the DMN62D2UW-13 datasheet, DMN62D2UW-13 pinout, DMN62D2UW-13 application, or DMN62D2UW-13 equivalent, key selection criteria include gate threshold voltage (0.5–1.0V), thermal resistance (281°C/W), body diode forward voltage (0.7–1.4V), and compatibility with 1.8V logic-level drive in compact DC-DC and backlighting designs.

Technical Context

This MOSFET employs planar silicon process technology to achieve low on-resistance while maintaining robust switching performance under low-voltage gate drive (1.8V–5.0V). Its R_DS(ON) remains stable over wide temperature range (–55°C to +150°C), and its low C_iss (41pF) and C_rss (4.2pF) support high-frequency operation up to several MHz.

The device integrates an ESD-protected gate structure and uses a fully RoHS-compliant, halogen-free molding compound. Its SOT323 footprint enables integration into ultra-thin portable electronics where thermal dissipation is limited to 0.4W under standard FR-4 layout conditions.

Key Specifications

Pinout & Package

Package: SOT323 - surface-mount, 3-terminal plastic package measuring 2.15mm × 2.10mm × 0.95mm, rated for moisture sensitivity level 1 per J-STD-020 and UL 94V-0 flammability compliance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with DMN62D2UW-13, DMN62D2UWQ adds automotive qualification without sacrificing performance, while AO3400 trades off gate-drive flexibility and eco-compliance for broader distributor availability-making DMN62D2UW-13 optimal for space- and efficiency-sensitive consumer designs.

Availability

DMN62D2UW-13 is available at Aetrix Electronics and suitable for motor controls, LED backlighting, and portable power management requiring stable component supply, consistent parametric performance, and long-term obsolescence mitigation.

Supply support for DMN62D2UW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power solutions, signal integrity products, and precision timing devices.

The DMN62D2UW belongs to Diodes' logic-level MOSFET product line, engineered specifically for low-voltage, high-density power switching in battery-operated and space-constrained applications such as wearables, IoT endpoints, and portable displays.

FAQ

What is the maximum safe operating voltage for DMN62D2UW-13?

The absolute maximum drain-source voltage (V_DSS) is 60V. Operation beyond this rating risks irreversible avalanche breakdown. For reliable long-term use, design margins should limit steady-state V_DS to ≤48V, especially under transient conditions or elevated temperature.

Can DMN62D2UW-13 be driven directly by a 1.8V GPIO?

Yes. With a gate threshold voltage (V_GS(TH)) of 0.5–1.0V and guaranteed R_DS(ON) of 4.0Ω at V_GS = 1.8V, it switches fully on using standard 1.8V logic outputs without external level shifting.

Does DMN62D2UW-13 include an integrated body diode?

Yes. It features a monolithic parasitic body diode between source and drain, with typical forward voltage of 0.7V at 115mA. This diode supports freewheeling in inductive loads and enables synchronous rectification in buck converters.

Is thermal derating required for continuous operation above 25°C ambient?

Yes. With R_θJA = 281°C/W, junction temperature rises rapidly: at 200mA and 50°C ambient, T_J ≈ 106°C. Derate I_D linearly above +25°C using the 199°C/W R_θJA value for minimum pad layout, or implement copper pour to improve heat spreading.