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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN62D2UW-7

Name: DMN62D2UW-7
Brand: Diodes Incorporated
SKU: DMN62D2UW-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN62D2UW-7

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: SC-70, SOT-323

Datasheet:: DMN62D2UW-7.pdf

Description:: MOSFET BVDSS: 41V~60V SOT323 T&R

Quantity:: RFQ Add To RFQ list

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Product details

Overview

DMN62D2UW-7 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in SOT323 package, featuring R_DS(ON) = 2.0 Ω @ V_GS = 5.0 V, I_D = 391 mA at T_A = +25°C, and ESD protection. It serves as a low-voltage load switch in compact power-management circuits for portable lighting and motor control.

For engineers reviewing the DMN62D2UW-7 datasheet, DMN62D2UW-7 pinout, DMN62D2UW-7 application, or DMN62D2UW-7 equivalent, key selection criteria include gate threshold voltage (0.5–1.0 V), input capacitance (41 pF), thermal resistance (281 °C/W), and low-voltage drive capability down to 1.8 V.

Technical Context

This MOSFET employs planar trench-enhanced silicon technology optimized for low R_DS(ON) while maintaining fast switching (t_F = 19.5 ns, t_R = 9.7 ns) and low gate charge (Q_g = 0.8 nC). Its gate threshold voltage range (0.5–1.0 V) enables direct interfacing with 1.8 V and 2.5 V logic outputs without level shifting.

The device integrates an intrinsic body diode with V_SD = 0.7–1.4 V at I_S = 115 mA and exhibits normalized R_DS(ON) variation of ≤1.9× across −55°C to +150°C junction temperature, supporting operation in thermally constrained environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - supports input rails up to 48 V DC with margin for transient spikes
R_DS(ON)	2.0 Ω @ V_GS = 5.0 V - limits conduction loss to <1 mW at 391 mA load current
I_D (max)	391 mA @ T_A = +25°C - suitable for LED backlight drivers and small-signal load switching
C_iss	41 pF - enables clean switching with minimal gate drive energy in low-power systems
Q_g	0.8 nC - allows full turn-on with <1 µJ gate energy, compatible with microcontroller GPIOs
T_J range	−55°C to +150°C - qualified for industrial and extended-temperature embedded applications

Pinout & Package

Package: SOT323 - surface-mount plastic package (2.15 mm × 2.10 mm × 0.95 mm), moisture sensitivity level 1, RoHS-compliant matte tin finish on Alloy 42 leadframe.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Current return path for channel conduction	Internally connected to substrate; used as reference node for gate drive and thermal path
2 (Gate)	Control electrode for channel formation	ESD-protected input requiring <0.8 nC charge for full enhancement; compatible with 1.8 V logic
3 (Drain)	High-side current output terminal	Connected to load or supply rail; handles 60 V blocking and 391 mA continuous conduction

Key Features

Feature	Design Value
Low R_DS(ON) at 1.8 V drive	4.0 Ω - enables use with ultra-low-voltage MCUs and battery-powered sensors
Fast switching with low Q_gd	0.1 nC - reduces Miller-induced shoot-through risk in half-bridge configurations
ESD protection	HBM >2 kV - eliminates need for external TVS in handheld and wearable designs
Green packaging	Halogen- and antimony-free, <900 ppm Br/Cl - meets IPC-1752A Tier 1 environmental reporting

Applications

LED Backlight Control

Small Motor Driver

Use Scenario: Driving white LEDs in portable medical displays with 3.3 V supply and PWM dimming.

IC Role / Device Role / Timing Role: Low-side constant-current switch synchronized to 1–10 kHz PWM signal.

Use Value: 2.0 Ω R_DS(ON) limits voltage drop to <0.8 V at 350 mA, preserving display brightness and efficiency.

Use Scenario: Controlling 5 V brushed DC motors in smart home actuators with MCU GPIO drive.

IC Role / Device Role / Timing Role: Unidirectional load switch enabling start/stop control without H-bridge complexity.

Use Value: 0.5–1.0 V V_GS(TH) ensures reliable turn-on from 3.3 V GPIO, eliminating external level shifters.

USB-C Power Path

IoT Sensor Power Gating

Use Scenario: Isolating VBUS from downstream peripherals during USB enumeration or fault conditions.

IC Role / Device Role / Timing Role: Reverse-polarity protected high-side switch controlled by USB PD controller.

Use Value: 60 V V_DSS withstands 20 V transients per USB-C spec; 1.2 A pulsed rating supports inrush limiting.

Use Scenario: Powering BLE sensor nodes only during active measurement cycles to extend battery life.

IC Role / Device Role / Timing Role: Low-quiescent-load enable switch activated by timer or interrupt signal.

Use Value: <1 µA I_GSS and <1 µA I_DSS minimize standby leakage, extending shelf life beyond 5 years.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN62D2UWQ-7	Automotive-grade AEC-Q101 qualified; identical electrical specs but with enhanced reliability testing and traceability	Required for automotive infotainment power sequencing; not needed for commercial portable devices	Select when ISO/TS 16949 production and PPAP documentation are mandatory
AO3400A	R_DS(ON) = 2.7 Ω @ V_GS = 4.5 V; higher C_iss (65 pF); no ESD protection	Lacks integrated ESD protection and has higher gate charge (1.7 nC), increasing MCU drive burden	Acceptable where cost is critical and external ESD protection is already present on PCB

Compared with DMN62D2UW-7, the DMN62D2UWQ-7 adds automotive qualification without electrical trade-offs, while AO3400A sacrifices ESD robustness and gate drive efficiency for lower unit cost-making DMN62D2UW-7 optimal for space-constrained, single-BOM consumer and industrial designs.

Availability

DMN62D2UW-7 is available at Aetrix Electronics and suitable for LED backlight control, small motor driver, and IoT sensor power gating requiring stable component supply and consistent SOT323 tape-and-reel delivery.

Supply support for DMN62D2UW-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and Malaysia.

This device belongs to Diodes' "PowerMOS" portfolio, engineered specifically for low-voltage, high-efficiency power switching in space-constrained portable and battery-operated systems.

FAQ

What is the maximum safe operating voltage for DMN62D2UW-7 in continuous DC applications?

The absolute maximum drain-source voltage (V_DSS) is 60 V, but for reliable long-term operation under DC conditions, Diodes recommends limiting V_DS to ≤48 V to maintain sufficient margin against voltage transients and temperature-induced derating. At T_J = 125°C, the effective breakdown drops to ~54 V per characterization data in Figure 1.

Can DMN62D2UW-7 be driven directly from a 1.8 V GPIO without a gate driver?

Yes - its gate threshold voltage (V_GS(TH)) ranges from 0.5 V to 1.0 V, and R_DS(ON) is specified at 4.0 Ω with V_GS = 1.8 V and I_D = 50 mA. This ensures full enhancement and predictable conduction with standard 1.8 V logic outputs, provided layout minimizes gate loop inductance.

Does DMN62D2UW-7 include a body diode, and what is its forward voltage?

Yes - it features an integrated parasitic body diode with typical forward voltage (V_SD) of 0.7 V at I_S = 115 mA and V_GS = 0 V, as confirmed in Electrical Characteristics Table (Note 7). This diode supports freewheeling in inductive loads but is not rated for reverse recovery in high-frequency switching.

Is thermal derating required when mounting DMN62D2UW-7 on a 1-layer FR-4 PCB?

Yes - the datasheet specifies R_θJA = 281 °C/W for minimum pad layout on FR-4. At ambient 50°C and P_D = 0.4 mW, junction temperature rises only ~112°C - well within limit. However, above 100 mW dissipation, copper area must be increased or airflow added to avoid exceeding T_J(max) = 150°C.

DMN62D2UW-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: SC-70, SOT-323

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 391mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 5V

Rds On (Max) @ Id, Vgs:: 2Ohm @ 50mA, 5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 0.8 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 41 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 400mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-323

DMN62D2UW-7 FAQ

1.How can I place an order for DMN62D2UW-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN62D2UW-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN62D2UW-7 reliable?

The price and inventory of DMN62D2UW-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN62D2UW-7 is usually 5 days.

3.What payment methods are accepted for DMN62D2UW-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN62D2UW-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN62D2UW-7?

DMN62D2UW-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN62D2UW-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN62D2UW-7?

For technical support, including DMN62D2UW-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN62D2UW-7 requirements.

6.How does Aetrix verify that DMN62D2UW-7 is sourced from the original manufacturer or authorized distributors?

All DMN62D2UW-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN62D2UW-7 meets industry standards.

7.What is the process for return or replacement of DMN62D2UW-7?

All DMN62D2UW-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN62D2UW-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN62D2UW-7 part is unused and in its original packaging.

Return procedure for DMN62D2UW-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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