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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN62D2UWQ-13

Name: DMN62D2UWQ-13
Brand: Diodes Incorporated
SKU: DMN62D2UWQ-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN62D2UWQ-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: SC-70, SOT-323

Datasheet:: DMN62D2UWQ-13.pdf

Description:: MOSFET BVDSS: 41V~60V SOT323 T&R

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Product details

Overview

DMN62D2UWQ-13 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in SOT323 package, qualified to AEC-Q101 for automotive use. It delivers R_DS(ON) of 2.0 Ω @ V_GS = 5.0 V, 391 mA continuous drain current at +25°C, and features ESD protection, low input capacitance (41 pF), and fast switching (t_r = 9.7 ns). It serves in motor control and backlighting circuits where space-constrained, robust low-voltage switching is required.

For engineers reviewing the DMN62D2UWQ-13 datasheet, DMN62D2UWQ-13 pinout, DMN62D2UWQ-13 application, or DMN62D2UWQ-13 equivalent, key selection criteria include its AEC-Q101 qualification, gate threshold voltage range (0.5–1.0 V), junction-to-ambient thermal resistance (281 °C/W), body diode forward voltage (0.7–1.4 V), and suitability for 1.8 V–5.0 V logic-level drive in automotive power management.

Technical Context

This MOSFET operates as a low-side switch with enhancement-mode gate control and integrated body diode. Its 60 V V_DSS rating supports 12 V and 24 V automotive bus systems, while the 0.5–1.0 V V_GS(TH) enables reliable turn-on from low-voltage microcontrollers. The device uses an alloy-42 leadframe with matte tin annealed terminals for solderability and IATF 16949-compliant manufacturing.

Thermal performance is defined by two power dissipation ratings: 0.4 W (minimum pad layout) and 0.6 W (1-inch² copper), reflecting its dependence on PCB layout. Dynamic parameters-including Q_g = 0.8 nC, C_iss = 41 pF, and t_d(OFF) = 22.6 ns-support high-frequency PWM operation in backlight dimming and motor commutation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Withstands up to 60 V drain-source voltage, suitable for 24 V automotive systems with transient margin.
R_DS(ON)	2.0 Ω @ V_GS = 5.0 V - Enables <391 mA continuous conduction with <5 mW conduction loss at rated current.
I_D (max)	391 mA @ T_A = +25°C - Maximum steady-state load current under standard FR-4 board conditions.
C_iss	41 pF - Low input capacitance reduces gate drive power and improves switching efficiency in high-frequency PWM.
t_r	9.7 ns - Fast rise time supports >10 MHz switching in LED backlight drivers without excessive EMI.
V_GS(TH)	0.5–1.0 V - Ensures turn-on compatibility with 1.8 V and higher logic families, including automotive MCUs.
Q_g	0.8 nC - Low total gate charge minimizes driver IC loading and simplifies gate resistor selection.

Pinout & Package

Package: SOT323 - ultra-small surface-mount plastic package (2.15 × 2.10 × 0.95 mm), moisture sensitivity level 1, RoHS-compliant, halogen/antimony-free "Green" compound.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Current return path for channel conduction	Connected to ground or low-side reference; forms cathode of integrated body diode.
2 (Gate)	Control electrode for channel formation	Receives logic-level voltage; requires ESD protection due to ±20 V rating and low-threshold design.
3 (Drain)	High-side current output terminal	Connects to load or supply rail; handles full switched voltage (up to 60 V) and pulsed current (1.2 A).

Key Features

Feature	Design Value
AEC-Q101 qualified & PPAP capable	Validated for automotive use with documented change control, IATF 16949 manufacturing, and full traceability.
Low R_DS(ON) at 1.8 V drive	4.0 Ω @ V_GS = 1.8 V enables direct interface with low-voltage microcontrollers without level-shifting.
ESD-protected gate	Integrated protection meets HBM ≥2 kV, reducing external TVS requirements in compact automotive modules.
Low C_oss and C_rss	5.4 pF C_oss, 4.2 pF C_rss minimize Miller effect and improve hard-switching stability in motor gate drives.
150 °C max junction temperature	Enables operation in under-hood environments with minimal derating when mounted per recommended pad layout.

Applications

Automotive Motor Control

LED Backlight Dimming

Use Scenario: Driving small DC motors in HVAC actuators, mirror adjusters, or seat positioners within 12 V vehicle networks.

IC Role / Device Role / Timing Role: Low-side switching element controlled by automotive MCU GPIO with PWM duty cycle modulation.

Use Value: 2.0 Ω R_DS(ON) limits conduction loss to <0.3 W at 391 mA, enabling thermally efficient placement near sensors or ECUs.

Use Scenario: Constant-current switching for LCD panel edge-lit LED strings in instrument clusters or infotainment displays.

IC Role / Device Role / Timing Role: High-frequency PWM-controlled current sink synchronized to display refresh timing.

Use Value: 9.7 ns rise time and 0.8 nC Q_g support clean 1–5 kHz dimming without audible noise or visible flicker.

Power Management Load Switch

Body Diode-Based Reverse Polarity Protection

Use Scenario: Controlled power enable/disable for auxiliary subsystems such as USB-C PD controllers or CAN transceivers.

IC Role / Device Role / Timing Role: Logic-enabled load switch with fast turn-on/turn-off to prevent inrush and support hot-swap sequencing.

Use Value: 0.5–1.0 V V_GS(TH) ensures full enhancement with 1.8 V or 3.3 V enable signals, eliminating need for external bias.

Use Scenario: Input protection for 12 V power rails in telematics modules exposed to battery reversal during service.

IC Role / Device Role / Timing Role: Passive reverse-polarity guard using intrinsic body diode orientation (source to input, drain to system).

Use Value: 0.7–1.4 V V_SD forward drop at 115 mA ensures <160 mW dissipation during fault, avoiding thermal shutdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN62D2UWQ-7	Identical die and specs; differs only in tape-and-reel packaging (3,000 pcs vs. 10,000 pcs).	No functional difference; selected based on production volume and inventory planning needs.	Choose -7 for prototyping or low-volume builds; -13 for high-volume automotive production runs.
NVBFS0D9N04M	40 V V_DSS, 0.9 mΩ R_DS(ON), SO-8 package - higher current, lower R_DS(ON), but larger footprint and non-AEC-Q101.	Not suitable for 60 V transients or AEC-Q101-certified programs; used in industrial 24 V power supplies.	Select only if higher current (>1 A) and non-automotive qualification are acceptable trade-offs for size and cost.

Compared with DMN62D2UWQ-13, the -7 variant offers identical electrical performance with smaller reel quantity, while NVBFS0D9N04M provides superior conduction efficiency but lacks automotive qualification and overvoltage margin-making DMN62D2UWQ-13 optimal for space-constrained, safety-critical 12/24 V automotive loads.

Availability

DMN62D2UWQ-13 is available at Aetrix Electronics and suitable for automotive motor control, LED backlight dimming, power management load switching, and reverse polarity protection requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for DMN62D2UWQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.

The DMN62D2UWQ belongs to Diodes' AEC-Q101-qualified logic-level MOSFET product line, designed specifically for space-constrained automotive subsystems requiring low-threshold drive, robust ESD tolerance, and validated PPAP documentation.

FAQ

What is the maximum junction temperature and how does it affect thermal design?

The DMN62D2UWQ-13 has a maximum junction temperature of +150°C. Its thermal resistance (R_θJA) is 281°C/W under minimum pad layout conditions, meaning a 0.4 W power dissipation raises junction temperature by 112°C above ambient. For reliable operation at +85°C ambient, power must be limited to ≤0.23 W unless enhanced copper area or airflow is provided.

Is the body diode suitable for freewheeling in inductive loads?

Yes-the integrated body diode supports continuous forward current up to 391 mA and has a typical V_SD of 0.7 V at 115 mA. It is characterized for use in flyback paths of small DC motors and solenoids, though external Schottky diodes may be preferred for higher current or faster recovery in demanding commutation.

Does this MOSFET require a gate resistor, and what value is recommended?

A gate resistor is recommended to damp ringing and limit peak gate current. Based on Q_g = 0.8 nC and typical MCU drive strength, a 10–47 Ω resistor balances switching speed (t_r/t_f) and EMI. For 1.8 V logic drive, ensure the resistor does not degrade V_GS below 1.5 V under dynamic loading.

How does the AEC-Q101 qualification impact supply chain and documentation?

AEC-Q101 qualification means the DMN62D2UWQ-13 undergoes stress testing per automotive standards, is manufactured in IATF 16949-certified facilities, and supports PPAP submission with full test reports, lot traceability, and change notification protocols-ensuring consistent quality and compliance for Tier 1 automotive programs.

DMN62D2UWQ-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: SC-70, SOT-323

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 391mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 5V

Rds On (Max) @ Id, Vgs:: 2Ohm @ 50mA, 5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 0.8 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 41 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 400µW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-323

DMN62D2UWQ-13 FAQ

1.How can I place an order for DMN62D2UWQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN62D2UWQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN62D2UWQ-13 reliable?

The price and inventory of DMN62D2UWQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN62D2UWQ-13 is usually 5 days.

3.What payment methods are accepted for DMN62D2UWQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN62D2UWQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN62D2UWQ-13?

DMN62D2UWQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN62D2UWQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN62D2UWQ-13?

For technical support, including DMN62D2UWQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN62D2UWQ-13 requirements.

6.How does Aetrix verify that DMN62D2UWQ-13 is sourced from the original manufacturer or authorized distributors?

All DMN62D2UWQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN62D2UWQ-13 meets industry standards.

7.What is the process for return or replacement of DMN62D2UWQ-13?

All DMN62D2UWQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN62D2UWQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN62D2UWQ-13 part is unused and in its original packaging.

Return procedure for DMN62D2UWQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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