Diodes Incorporated DMN62D2UWQ-7

Overview

DMN62D2UWQ-7 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in SOT323 package, qualified to AEC-Q101 and PPAP-capable for automotive use. It delivers R_DS(ON) = 2.0 Ω @ V_GS = 5.0 V, 391 mA continuous drain current at +25°C, and features ESD protection, low input capacitance (41 pF), and fast switching (t_r = 9.7 ns). It is deployed in motor control and backlighting circuits requiring robust low-power switching.

For engineers reviewing the DMN62D2UWQ-7 datasheet, DMN62D2UWQ-7 pinout, DMN62D2UWQ-7 application, or DMN62D2UWQ-7 equivalent, key selection criteria include its AEC-Q101 qualification, gate threshold voltage range (0.5–1.0 V), junction-to-ambient thermal resistance (281 °C/W), and guaranteed R_DS(ON) performance across V_GS = 1.8–5.0 V.

Technical Context

This MOSFET operates as a low-voltage, low-current single-N-channel switch optimized for space-constrained automotive subsystems. Its enhancement-mode operation requires positive gate bias for conduction, with V_GS(TH) tightly specified between 0.5 V and 1.0 V to ensure reliable turn-on from 1.8 V logic drivers.

The device integrates an intrinsic body diode (V_SD = 0.7–1.4 V @ I_S = 115 mA) and exhibits low dynamic parameters: C_iss = 41 pF, C_rss = 4.2 pF, Q_g = 0.8 nC, enabling efficient switching in battery-powered lighting and motor drive stages where gate drive strength is limited.

Key Specifications

Pinout & Package

Package: SOT323 - ultra-small surface-mount plastic package (2.15 mm × 2.10 mm × 0.95 mm), rated for moisture sensitivity level 1, lead-free and halogen-free per J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage MOSFET applications.

Compared with DMN62D2UWQ-7, the -13 variant offers identical performance with higher reel quantity, while NX3008NBK lacks AEC-Q101 validation and has higher R_DS(ON) at 1.8 V - making DMN62D2UWQ-7 the sole choice for automotive-grade low-threshold switching where qualification and thermal efficiency are mandatory.

Availability

DMN62D2UWQ-7 is available at Aetrix Electronics and suitable for automotive interior lighting, small DC motor control, ADAS sensor power management, and USB-C port switching requiring stable component supply across extended temperature ranges and long-lifecycle programs.

Supply support for DMN62D2UWQ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The DMN62D2UWQ belongs to Diodes' AEC-Q101-qualified automotive MOSFET product line, engineered specifically for low-power, high-reliability switching in space- and thermal-constrained vehicle subsystems such as lighting, HVAC, and driver-assistance sensors.

FAQ

What is the maximum junction temperature and how does it affect continuous current rating?

The DMN62D2UWQ-7 has a maximum junction temperature of +150°C. At T_A = +70°C, its continuous drain current derates to 313 mA due to thermal resistance (R_θJA = 281°C/W). This means sustained operation above 70°C ambient requires PCB copper area optimization or forced airflow to maintain safe junction temperatures and avoid thermal shutdown.

Is the body diode suitable for reverse-current freewheeling in inductive loads?

Yes - the integrated body diode has a forward voltage of 0.7–1.4 V at 115 mA and is rated for continuous forward current up to 391 mA. It supports freewheeling in low-power inductive loads like small solenoids or fan motors, but its relatively high V_SD and lack of soft-recovery characteristics mean external Schottky clamping is recommended for high-efficiency or high-frequency PWM applications.

Does the DMN62D2UWQ-7 require external gate resistors for stability?

Not strictly required, but a 10–47 Ω series gate resistor is recommended to dampen ringing caused by trace inductance and the device's 52 Ω gate resistance. This improves EMI performance and prevents false triggering during fast dV/dt events common in automotive environments, especially when driven directly from MCU GPIO pins without buffer stages.

How does the device perform at elevated temperatures, and what is the R_DS(ON) shift?

R_DS(ON) increases linearly with junction temperature: normalized resistance rises ~1.9× from –55°C to +150°C at fixed V_GS. At +125°C and V_GS = 5.0 V, R_DS(ON) reaches ~3.2 Ω - a 60% increase over room-temperature value - which must be factored into worst-case power loss calculations for thermal design validation.