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Diodes Incorporated DMN62D4LDW-13
- Part No.:
- DMN62D4LDW-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
DMN62D4LDW-13.pdf
- Description:
- MOSFET 2N-CH 60V 0.261A SOT363
- Quantity:
- Payment:
- Shipping:
Inventory:5,744
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Product details
Overview
DMN62D4LDW-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT363 package, rated for 60V VDSS, 3.0Ω RDS(ON) @ VGS = 10V, and 261mA continuous drain current at TA = +25°C. It integrates two ESD-protected, low-threshold (1.0–2.0V) MOSFETs with fast switching (tF = 14.3ns) for compact power management in space-constrained motor control circuits.
For engineers reviewing the DMN62D4LDW-13 datasheet, DMN62D4LDW-13 pinout, DMN62D4LDW-13 application, or DMN62D4LDW-13 equivalent, key selection criteria include dual-channel integration in SOT363, guaranteed RDS(ON) ≤ 4.0Ω @ 4.5V, gate charge Qg = 1.04nC @ 10V, and thermal resistance RθJA = 278°C/W on enhanced PCB layout.
Technical Context
This dual MOSFET uses planar silicon technology with integrated gate protection diodes and ESD structures per IEC 61000-4-2 Level 3 (±8kV contact). Each channel operates independently with matched threshold voltage (VGS(TH) = 1.0–2.0V) and exhibits low input capacitance (Ciss = 41pF) for stable gate drive under 3.3V/5V logic.
Thermal performance is defined for two mounting conditions: 379°C/W on minimal FR-4 pad and 278°C/W with 1-inch² copper pour. Dynamic parameters-including tD(OFF) = 37.8ns and Qgd = 0.18nC-support high-frequency PWM operation up to 1MHz in low-power DC-DC and load-switching topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60V - supports 24V rail systems with 150% safety margin against transients |
| RDS(ON) | 3.0Ω @ VGS = 10V - enables <150mW conduction loss at 200mA load |
| ID (max) | 261mA @ TA = +25°C - suitable for signal-level load switching and bias control |
| VGS(TH) | 1.0–2.0V - ensures full enhancement with 3.3V GPIO without level-shifting |
| Ciss | 41pF - minimizes gate drive power and improves noise immunity in dense layouts |
| Qg | 1.04nC @ VGS = 10V - allows clean 10MHz switching with <10Ω gate resistor |
| RθJA | 278°C/W - requires only 1-inch² copper pour to sustain 450mW dissipation at ambient |
Pinout & Package
Package: SOT363 - surface-mount, 6-pin, dual-channel discrete package with 0.65mm pitch, 2.15mm × 2.10mm footprint, and 0.95mm height. Molded green compound (UL 94V-0), matte tin-plated leads, MSL Level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S1) | Source of Channel 1 | Low-side return path for first MOSFET; internally tied to pin 4 in common-source configuration |
| 2 (G1) | Gate of Channel 1 | Control input for first MOSFET; ESD-protected with integrated diode to S1 |
| 3 (D1) | Drain of Channel 1 | High-side switch node for Channel 1; rated for 60V blocking and 261mA continuous |
| 4 (S2) | Source of Channel 2 | Independent source terminal for second MOSFET; not internally connected to S1 |
| 5 (G2) | Gate of Channel 2 | Independent control input; matched VGS(TH) and Ciss to G1 for synchronized switching |
| 6 (D2) | Drain of Channel 2 | Second high-side switch node; electrically isolated from D1; supports independent load control |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent N-channel topology | Enables two separate low-side switches in one 2.15mm × 2.10mm footprint-reducing board area by 40% vs. discrete SOT23 pairs |
| Low gate threshold (1.0–2.0V) | Guarantees turn-on with standard 3.3V microcontroller outputs without external level shifters |
| ESD protection (HBM ≥ 2kV) | Integrated gate protection diodes eliminate need for external TVS in handheld and portable designs |
| Low Ciss/Coss ratio (41pF / 4.5pF) | Improves Miller immunity and reduces shoot-through risk in half-bridge configurations |
| Halogen- and antimony-free "Green" construction | Meets IPC-1752A Class 2 reporting requirements and automotive PPAP material declarations |
Applications
| Brushless DC Motor Driver Stage | USB-C Load Switch Control |
|---|---|
|
Use Scenario: Low-voltage BLDC gate driver pre-driver stage controlling external power FETs in fan or pump modules. IC Role / Device Role / Timing Role: Dual low-side switch enabling complementary PWM control of high-side FET gates via bootstrap circuitry. Use Value: 4.0Ω RDS(ON) @ 4.5V ensures <200mW loss during 200mA bootstrap charging pulses at 20kHz. |
Use Scenario: Dual-path power routing in USB-C port controllers managing VBUS and CC line switching. IC Role / Device Role / Timing Role: Independent load switch for VBUS enable and CC line pull-up/down control with simultaneous sequencing. Use Value: Matched VGS(TH) and fast tF = 14.3ns support <10µs transition timing compliance per USB PD 3.1 spec. |
| IoT Sensor Node Power Gating | Industrial PLC Digital Output Module |
|
Use Scenario: Selective power gating of BLE radio, accelerometer, and environmental sensors in battery-powered edge nodes. IC Role / Device Role / Timing Role: Dual-channel always-on/low-power mode switch isolating subsystems during deep-sleep cycles. Use Value: 1µA IDSS and 10µA IGSS ensure <15nA total leakage per channel-extending 10-year coin-cell life. |
Use Scenario: 24V digital output stage in modular PLC backplanes driving solenoids and indicator LEDs. IC Role / Device Role / Timing Role: Low-side driver for 24V sinking outputs with integrated ESD protection for field-wire interface robustness. Use Value: 60V VDSS withstands 36V transients per IEC 61000-4-4; RDS(ON) stability over −55°C to +125°C ensures consistent drop-out across industrial temperature range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN62D0LW-7 | Single-channel SOT363 variant (same RDS(ON), VDSS, VGS(TH)) | Requires two devices for dual functionality; increases layout area and BOM count | Select when channel isolation requirements exceed internal SOT363 die coupling limits |
| NTJD4152PZ | Higher RDS(ON) = 4.5Ω @ 4.5V; lower Qg = 0.7nC; same SOT363 package | Suitable for lower-frequency (<500kHz), higher-voltage (≥30V) load switching where gate drive strength is secondary | Prefer when minimizing gate drive power outweighs conduction loss targets |
Compared with DMN62D4LDW-13, DMN62D0LW-7 doubles PCB area and assembly cost for dual functions, while NTJD4152PZ trades 12.5% higher conduction loss for 32% lower gate charge-making it viable only in thermally relaxed, low-duty-cycle applications.
Availability
DMN62D4LDW-13 is available at Aetrix Electronics and suitable for motor control, USB-C power routing, IoT sensor node power gating, and industrial PLC digital output modules requiring stable component supply and long-term lifecycle assurance.
Supply support for DMN62D4LDW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in ASE, J-Devices, and its own facilities.
DMN62D4LDW-13 belongs to Diodes' "PowerMOS" portfolio targeting space-constrained, low-voltage power management-designed specifically for dual-channel integration in portable, industrial, and automotive-qualified subsystems.
FAQ
What is the maximum safe operating junction temperature for DMN62D4LDW-13?
The absolute maximum junction temperature is +150°C, verified per JEDEC JESD22-A108. Derating begins at +125°C ambient when mounted on FR-4 with 1-inch² copper; sustained operation above 135°C junction requires thermal simulation using the provided transient thermal resistance curve (Figure 13).
Can DMN62D4LDW-13 be used in a high-side switching configuration?
No-it is optimized as a low-side switch with source terminals referenced to ground. The SOT363 package lacks an isolated substrate or floating source capability; high-side use would require external level-shifting and violates the device's safe operating area limits per Figure 12.
Is the body diode in each channel suitable for reverse recovery in flyback applications?
Yes-the body diode has tRR = 88ns and QRR = 29nC at 1A/100A/µs, validated per JEDEC JESD24-11. It supports discontinuous conduction mode (DCM) flyback snubbing up to 500kHz but is not rated for continuous reverse conduction above 115mA.
Does DMN62D4LDW-13 meet AEC-Q101 for automotive use?
No-this part is not AEC-Q101 qualified. Diodes offers automotive-grade variants (e.g., DMN62D4LWQ-13) with PPAP documentation, IATF 16949 manufacturing, and extended temperature screening; consult Diodes' automotive product definitions page for qualified alternatives.
DMN62D4LDW-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 261mA (Ta)
- Rds On (Max) @ Id, Vgs:
- 3Ohm @ 200mA, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 1.04nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 41pF @ 30V
- Power - Max:
- 330mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-363
DMN62D4LDW-13 FAQ
1.How can I place an order for DMN62D4LDW-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN62D4LDW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN62D4LDW-13 reliable?
The price and inventory of DMN62D4LDW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN62D4LDW-13 is usually 5 days.
3.What payment methods are accepted for DMN62D4LDW-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN62D4LDW-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN62D4LDW-13?
DMN62D4LDW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN62D4LDW-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN62D4LDW-13?
For technical support, including DMN62D4LDW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN62D4LDW-13 requirements.
6.How does Aetrix verify that DMN62D4LDW-13 is sourced from the original manufacturer or authorized distributors?
All DMN62D4LDW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN62D4LDW-13 meets industry standards.
7.What is the process for return or replacement of DMN62D4LDW-13?
All DMN62D4LDW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN62D4LDW-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN62D4LDW-13 part is unused and in its original packaging.
Return procedure for DMN62D4LDW-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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