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Diodes Incorporated DMN62D4LDW-7
- Part No.:
- DMN62D4LDW-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
DMN62D4LDW-7.pdf
- Description:
- MOSFET 2N-CH 60V 0.261A SOT363
- Quantity:
- Payment:
- Shipping:
Inventory:8,775
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Product details
Overview
DMN62D4LDW-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT363 package, rated for 60V VDSS, 3.0Ω RDS(ON) @ 10V VGS, and 261mA continuous drain current at +25°C. It integrates two matched low-threshold (1.0–2.0V) MOSFETs with ESD protection, optimized for compact power switching in space-constrained DC-DC and load-switching applications.
For engineers reviewing the DMN62D4LDW-7 datasheet, DMN62D4LDW-7 pinout, DMN62D4LDW-7 application, or DMN62D4LDW-7 equivalent, key selection criteria include dual-channel RDS(ON) matching at 4.5V/10V drive, thermal resistance of 278°C/W on enhanced PCB layout, and gate charge of 1.04nC at 10V - critical for high-frequency synchronous buck and motor driver half-bridge stages.
Technical Context
This dual MOSFET implements two independent N-channel silicon devices in a single SOT363 package, each featuring integrated gate protection diodes and low-input capacitance (Ciss = 41pF). Its 1.0–2.0V gate threshold enables direct interface with 3.3V logic controllers without level shifting.
The device supports bidirectional current flow via intrinsic body diodes (VSD = 0.8–1.4V @ 115mA), with fast switching (tF = 14.3ns) and low reverse recovery charge (QRR = 29nC), making it suitable for synchronous rectification and PWM-driven low-side switching where shoot-through risk must be minimized.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60V - supports input rails up to 48V nominal systems with 20% margin |
| RDS(ON) | 3.0Ω @ VGS = 10V - limits conduction loss to ≤78mW at 200mA load |
| ID (max) | 261mA @ TA = +25°C - defines maximum steady-state current per channel under standard FR-4 layout |
| Qg | 1.04nC @ VGS = 10V - determines gate drive power requirement for 1MHz switching |
| RθJA | 278°C/W - achievable with 1-inch² copper pour; sets max power dissipation at 0.45W |
| VGS(TH) | 1.0–2.0V - ensures full enhancement with 3.3V GPIO, eliminating need for external level shifters |
| Ciss | 41pF - reduces Miller effect-induced delay in high-speed gate drivers |
Pinout & Package
SOT363 surface-mount package: 6-pin, dual-row, 0.65mm pitch, 2.15mm × 2.10mm footprint, 0.95mm height, matte tin-plated leadframe, JEDEC-compliant moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S1) | Source of Channel 1 | Low-side return path for first MOSFET; tied to common ground plane in half-bridge configurations |
| 2 (G1) | Gate of Channel 1 | Control input requiring ≤1.04nC charge; sensitive to ESD but protected by internal diode |
| 3 (D1) | Drain of Channel 1 | Switched output node; connects to load or inductor in buck converter topologies |
| 4 (D2) | Drain of Channel 2 | Independent high-side or second load switch node; electrically isolated from D1 |
| 5 (G2) | Gate of Channel 2 | Separate control input enabling independent or complementary drive of dual channels |
| 6 (S2) | Source of Channel 2 | Second return path; may be tied to S1 for parallel operation or left independent for dual-load control |
Key Features
| Feature | Design Value |
|---|---|
| Dual matched N-channel topology | Enables compact dual-load switching or half-bridge configuration without discrete pairing mismatch |
| Low 4.5V RDS(ON) | 4.0Ω @ VGS = 4.5V - supports direct drive from USB-powered microcontrollers and PMICs |
| ESD protection | HBM rating ≥2kV - eliminates need for external TVS on gate lines in consumer-grade designs |
| Green RoHS compliance | Halogen- and antimony-free, <900ppm Br/Cl total - meets IEC 61249-2-21 for automotive and industrial PCBs |
| Fast turn-off | tF = 14.3ns - minimizes cross-conduction loss in synchronous rectifiers operating above 500kHz |
Applications
| USB Power Delivery Switching | Low-Voltage Motor Control |
|---|---|
|
Use Scenario: Dual-path load switching in USB-C PD sink applications, routing power between VBUS and auxiliary rails. IC Role / Device Role / Timing Role: Dual low-side switch controlling independent 5V/9V/15V rail enable paths with coordinated gate timing. Use Value: 3.0Ω RDS(ON) limits voltage drop to <150mV at 50mA, preserving PD negotiation accuracy and minimizing thermal rise in 2mm² board area. |
Use Scenario: Bidirectional H-bridge driver for small brushed DC motors in portable medical pumps and robotics. IC Role / Device Role / Timing Role: Two independent low-side switches implementing PWM-controlled direction and speed, with body diodes supporting freewheeling. Use Value: Matched VGS(TH) (1.0–2.0V) ensures symmetrical turn-on across channels, reducing torque ripple below 3% at 20kHz PWM frequency. |
| IoT Sensor Node Power Gating | LED Backlight Dimming |
|
Use Scenario: Selective power gating of RF transceivers, ADCs, and memory in battery-powered edge nodes. IC Role / Device Role / Timing Role: Dual-channel load switch enabling independent wake-up sequencing and leakage suppression during deep sleep. Use Value: 1µA IDSS and ±10µA IGSS ensure <100nA system standby current per channel, extending coin-cell life beyond 5 years. |
Use Scenario: Constant-current LED string dimming in smart display modules using PWM-controlled current sinking. IC Role / Device Role / Timing Role: Dual low-side current sink for parallel LED strings, driven by MCU PWM outputs. Use Value: 41pC Ciss and 1.04nC Qg support clean 10kHz PWM edges with <5% duty-cycle distortion, eliminating visible flicker. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN62D4LH-7 | Same die, SOT26 package (larger thermal pad, RθJA = 220°C/W) | Better thermal performance in high-duty-cycle (>60%) applications; requires larger PCB area | Select when PD > 0.4W per channel is expected and board space permits SOT26 footprint |
| NTJD4152PZ | Higher RDS(ON) (4.5Ω @ 4.5V), no integrated ESD diodes, lower Qg (0.7nC) | Lower gate drive loss but requires external ESD protection and suffers higher conduction loss at 200mA | Prefer only when cost sensitivity outweighs reliability requirements and board-level ESD design is already implemented |
Compared with DMN62D4LDW-7, DMN62D4LH-7 offers superior thermal handling in sustained loads but increases board area by 40%, while NTJD4152PZ trades robustness for marginal gate efficiency - making DMN62D4LDW-7 optimal for space-constrained, reliability-critical 3.3V logic-driven systems.
Availability
DMN62D4LDW-7 is available at Aetrix Electronics and suitable for USB power delivery switching, IoT sensor node power gating, and low-voltage motor control requiring stable component supply across production lifecycles.
Supply support for DMN62D4LDW-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in ASE, J-Devices, and its own facilities.
The DMN62D4LDW-7 belongs to Diodes' "PowerMOS" portfolio, engineered specifically for high-efficiency, low-voltage power management in portable and space-constrained electronics where dual-channel integration and logic-level drive are essential.
FAQ
What is the maximum safe operating junction temperature for DMN62D4LDW-7?
The absolute maximum junction temperature is +150°C, and the device is characterized for RDS(ON) variation up to this limit. At TJ = 125°C, RDS(ON) increases by ~1.8× versus 25°C (per Figure 6), so thermal design must ensure TJ remains ≤125°C for stable conduction loss in continuous operation.
Can DMN62D4LDW-7 be used in linear regulation mode?
No - the device is not characterized for linear (ohmic) operation. Its Safe Operating Area (SOA) curve (Figure 12) shows only pulsed capability up to 1.1A for 100µs; sustained linear use risks thermal runaway due to positive RDS(ON) temperature coefficient and limited power dissipation (0.45W max).
Is the body diode in each channel suitable for reverse polarity protection?
Yes - each channel's intrinsic body diode has VSD = 0.8–1.4V at 115mA and tRR = 88ns, enabling effective reverse-battery protection in low-current (<200mA) applications. However, forward voltage drop exceeds discrete Schottky solutions, so efficiency loss must be evaluated against system requirements.
Does DMN62D4LDW-7 support parallel operation of both channels?
Yes - the matched VGS(TH) (1.0–2.0V) and RDS(ON) (±15% typical matching per datasheet) allow paralleling S1–S2 and D1–D2 for 522mA total current, provided gate traces are length-matched and thermal coupling is uniform to avoid current imbalance.
DMN62D4LDW-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 261mA (Ta)
- Rds On (Max) @ Id, Vgs:
- 3Ohm @ 200mA, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 1.04nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 41pF @ 30V
- Power - Max:
- 330mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-363
DMN62D4LDW-7 FAQ
1.How can I place an order for DMN62D4LDW-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN62D4LDW-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN62D4LDW-7 reliable?
The price and inventory of DMN62D4LDW-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN62D4LDW-7 is usually 5 days.
3.What payment methods are accepted for DMN62D4LDW-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN62D4LDW-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN62D4LDW-7?
DMN62D4LDW-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN62D4LDW-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN62D4LDW-7?
For technical support, including DMN62D4LDW-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN62D4LDW-7 requirements.
6.How does Aetrix verify that DMN62D4LDW-7 is sourced from the original manufacturer or authorized distributors?
All DMN62D4LDW-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN62D4LDW-7 meets industry standards.
7.What is the process for return or replacement of DMN62D4LDW-7?
All DMN62D4LDW-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN62D4LDW-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN62D4LDW-7 part is unused and in its original packaging.
Return procedure for DMN62D4LDW-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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