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Diodes Incorporated DMN62D4LFB-7B
- Part No.:
- DMN62D4LFB-7B
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 3-UFDFN
- Datasheet:
-
DMN62D4LFB-7B.pdf
- Description:
- MOSFET BVDSS: 41V~60V X2-DFN1006
- Quantity:
- Payment:
- Shipping:
Inventory:9,927
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Product details
Overview
DMN62D4LFB-7B from Diodes Incorporated is an N-channel enhancement-mode MOSFET optimized for low-RDS(ON) and fast switching in space-constrained power management circuits. It delivers 2 Ω @ VGS = 10 V, 407 mA continuous drain current at +25°C, and operates up to 60 V VDSS, making it suitable for DC-DC converter high-side switches in portable battery-powered systems.
For engineers reviewing the DMN62D4LFB-7B datasheet, DMN62D4LFB-7B pinout, DMN62D4LFB-7B application, or DMN62D4LFB-7B equivalent, key selection criteria include RDS(ON) at 5 V gate drive, thermal resistance under PCB-limited dissipation (RθJA = 251 °C/W), and DFN1006 footprint compatibility with automated placement.
Technical Context
This MOSFET uses a planar silicon process to achieve low threshold voltage (1.0–2.5 V) and stable RDS(ON) across temperature, enabling reliable operation in battery-operated systems where gate drive voltage may drop below 5 V. Its 40 pF Ciss and 2.8 pF Crss support efficient 1–10 MHz switching in buck converters.
The device integrates a body diode with 0.8–1.1 V forward voltage at 115 mA, supporting synchronous rectification and reverse-current blocking in compact load-switch and solid-state relay topologies. Thermal performance is defined for both minimal FR-4 layout (0.5 W PD) and enhanced thermal vias (1.2 W PD).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Maximum drain-source blocking voltage for use in 24–48 V input DC-DC stages |
| RDS(ON) | 2 Ω @ VGS = 10 V, ID = 0.5 A - Enables <100 mW conduction loss at 200 mA load |
| ID (continuous) | 407 mA @ TA = +25°C - Sustained current capability on standard FR-4 without thermal vias |
| Ciss | 40 pF @ VDS = 30 V - Low input capacitance reduces gate drive power and speeds turn-on |
| Qg | 1.1 nC @ VGS = 10 V - Enables clean 5–10 ns switching transitions with 25 Ω gate resistor |
| RθJA | 251 °C/W - Junction-to-ambient thermal resistance on minimal PCB pad layout |
| TJ range | −55°C to +150°C - Supports industrial and extended-temperature battery management applications |
Pinout & Package
Package: X1-DFN1006-3 (1.0 × 0.6 mm, 0.5 mm height), lead-free NiPdAu-plated copper leadframe, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Accepts 0–20 V gate drive; threshold voltage 1.0–2.5 V enables logic-level operation from 3.3 V or 5 V microcontrollers |
| S (Source) | Reference node for gate drive and current return path | Internally connected to exposed thermal pad; must be soldered to PCB ground plane for thermal and electrical integrity |
| D (Drain) | Power output terminal | Carries switched load current; connects to input rail in high-side switch configuration or output rail in low-side configuration |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 5 V drive | 3 Ω @ VGS = 5 V, ID = 50 mA - Ensures usable on-resistance even with degraded battery voltage |
| Fast switching speed | tD(ON) = 5.4 ns, tF = 11 ns - Minimizes transition losses in high-frequency (>1 MHz) DC-DC converters |
| Low gate charge | Qg = 0.6 nC @ VGS = 4.5 V - Reduces gate driver power consumption and EMI generation |
| Green package | Halogen- and antimony-free, RoHS 3 compliant - Meets environmental requirements for consumer and industrial end equipment |
| ESD protection | Integrated gate protection diode - Withstands >2 kV HBM per JEDEC JS-001, reducing external protection needs |
Applications
| DC-DC Buck Converter | Battery Load Switch |
|---|---|
|
Use Scenario: Step-down regulation from 12 V to 3.3 V in IoT sensor node with Li-ion battery input. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 2 MHz PWM frequency. Use Value: 2 Ω RDS(ON) limits conduction loss to <200 µW at 10 mA quiescent load, extending battery life. |
Use Scenario: Controlled power enable for Bluetooth module during sleep/wake cycles. IC Role / Device Role / Timing Role: Low-side load switch driven by GPIO with 100 ms on/off timing. Use Value: 1.33 Ω typical RDS(ON) ensures <13 mV dropout at 10 mA, preserving voltage margin for RF stability. |
| Solid-State Relay | USB Port Power Control |
|
Use Scenario: Replacement of electromechanical relay in smart home actuator with 24 V DC control signal. IC Role / Device Role / Timing Role: Low-side switching element handling 300 mA resistive load with zero-crossing disabled. Use Value: 60 V VDSS and 1 A pulsed rating support transient overvoltage immunity during inductive load switching. |
Use Scenario: VBUS power gating in USB-C peripheral with overcurrent detection interface. IC Role / Device Role / Timing Role: High-side switch controlled by dedicated power management IC with fault reporting. Use Value: 0.5 W power dissipation limit aligns with USB PD thermal budget on 2-layer PCB without heatsink. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel low-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN62D4LFB-7 | Same die, identical specs; differs only in tape-and-reel packaging quantity (3,000 vs. 10,000 units) | No functional difference; used interchangeably where reel size matches production line requirements | Select -7 for prototyping or low-volume assembly; -7B for high-volume SMT lines requiring full reels |
| AO3400 | RDS(ON) = 28 mΩ @ VGS = 10 V (lower), but larger SOT-23 package (3.0 × 1.4 mm) and higher Ciss (650 pF) | Higher current capacity (5.7 A) but unsuitable for ultra-compact layouts; requires more gate drive energy | Choose AO3400 only when >500 mA continuous current is required and board area permits SOT-23 |
Compared with DMN62D4LFB-7B, the -7 variant offers identical electrical performance with smaller reel logistics, while AO3400 trades footprint efficiency for higher current handling-making DMN62D4LFB-7B optimal for sub-500 mA, space-constrained battery management.
Availability
DMN62D4LFB-7B is available at Aetrix Electronics and suitable for DC-DC converters, battery load switches, and solid-state relays requiring stable component supply and consistent DFN1006-3 footprint compliance.
Supply support for DMN62D4LFB-7B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.
This MOSFET belongs to Diodes' X1-DFN logic-level power transistor family, engineered specifically for high-efficiency, miniaturized power management in portable and battery-powered electronics.
FAQ
What is the maximum continuous drain current for DMN62D4LFB-7B at +70°C ambient?
The maximum continuous drain current is 325 mA at TA = +70°C with device mounted on FR-4 PCB using minimum recommended pad layout. This derating reflects thermal limitations of the 0.5 W power dissipation rating and 251 °C/W junction-to-ambient resistance under standard conditions.
Does DMN62D4LFB-7B require external gate resistors for ESD or switching control?
No external gate resistor is required for ESD protection-the device integrates a gate protection diode rated for >2 kV HBM. However, a 10–25 Ω series gate resistor is recommended to dampen ringing and control dV/dt during switching, especially in high-frequency DC-DC applications.
Can DMN62D4LFB-7B be used in a high-side switch configuration with 5 V gate drive?
Yes-it has a gate threshold voltage of 1.0–2.5 V and achieves 3 Ω RDS(ON) at VGS = 5 V, making it suitable for high-side switching from 5 V logic. Ensure source node is referenced correctly and gate drive can swing fully to 5 V relative to source potential.
Is the X1-DFN1006-3 package compatible with standard reflow profiles for lead-free soldering?
Yes-the package is qualified for lead-free reflow per J-STD-020, with moisture sensitivity level 1. Recommended peak temperature is 260°C for ≤10 seconds; preheat and soak phases must follow IPC/JEDEC J-STD-020 guidelines to avoid delamination or voiding.
DMN62D4LFB-7B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 3-UFDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 407mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 1.1 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 40 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 500mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- X1-DFN1006-3
DMN62D4LFB-7B FAQ
1.How can I place an order for DMN62D4LFB-7B through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN62D4LFB-7B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN62D4LFB-7B reliable?
The price and inventory of DMN62D4LFB-7B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN62D4LFB-7B is usually 5 days.
3.What payment methods are accepted for DMN62D4LFB-7B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN62D4LFB-7B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN62D4LFB-7B?
DMN62D4LFB-7B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN62D4LFB-7B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN62D4LFB-7B?
For technical support, including DMN62D4LFB-7B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN62D4LFB-7B requirements.
6.How does Aetrix verify that DMN62D4LFB-7B is sourced from the original manufacturer or authorized distributors?
All DMN62D4LFB-7B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN62D4LFB-7B meets industry standards.
7.What is the process for return or replacement of DMN62D4LFB-7B?
All DMN62D4LFB-7B units undergo pre-shipment inspection (PSI). If there is an issue with DMN62D4LFB-7B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN62D4LFB-7B part is unused and in its original packaging.
Return procedure for DMN62D4LFB-7B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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