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Diodes Incorporated DMN63D1L-7
- Part No.:
- DMN63D1L-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
DMN63D1L-7.pdf
- Description:
- MOSFET N-CH 60V 380MA SOT23
- Quantity:
- Payment:
- Shipping:
Inventory:7,163
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Product details
Overview
DMN63D1L-7 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in SOT23 package, rated for 60V V(BR)DSS, 2Ω RDS(ON) @ VGS = 10V, and 380mA continuous drain current at TA = +25°C. It delivers low on-resistance with fast switching speed and ESD protection up to 2kV, targeting compact power management circuits in motor control and LED backlighting.
For engineers reviewing the DMN63D1L-7 datasheet, DMN63D1L-7 pinout, DMN63D1L-7 application, or DMN63D1L-7 equivalent, this page provides verified electrical parameters, thermal behavior under pulsed and steady-state conditions, gate charge metrics (Qg = 304pC), junction capacitance profile (Ciss = 30pF), and validated SOT23 terminal mapping for layout and reliability assessment.
Technical Context
This MOSFET employs a planar silicon process optimized for low RDS(ON) while maintaining controlled gate charge (Qg = 304pC, Qgs = 203pC) and low output capacitance (Coss = 4.2pF). Its VGS(TH) range of 1.0–2.5V enables reliable turn-on with 3.3V and 5V logic-level drivers.
Thermal performance is characterized for two mounting conditions: 338°C/W RθJA (minimum pad) and 227°C/W (enhanced 1"×1" 2oz copper), supporting both space-constrained and thermally demanding PCB layouts. The body diode exhibits VF = 0.75V @ IS = 115mA and supports bidirectional current in H-bridge or flyback configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 60V - Withstands up to 60V drain-source voltage before avalanche conduction begins. |
| RDS(ON) | 2.0Ω @ VGS = 10V, ID = 0.5A - Enables <150mW conduction loss at 300mA, critical for battery-powered efficiency. |
| ID (continuous) | 380mA @ TA = +25°C - Maximum steady-state drain current with standard FR-4 layout and no forced airflow. |
| Qg / Qgs | 304pC / 203pC @ VGS = 4.5V - Low gate charge reduces driver power and switching transition time in high-frequency PWM. |
| Ciss | 30pF @ VDS = 25V - Limits Miller effect and input loading on gate drivers in switching regulators. |
| VGS(TH) | 1.0–2.5V @ ID = 1mA - Ensures robust turn-on with 3.3V microcontroller GPIO without level-shifting. |
| TJ range | −55°C to +150°C - Qualified per AEC-Q101, suitable for automotive cabin and industrial ambient environments. |
Pinout & Package
SOT23-3 package: surface-mount, plastic-molded, lead-free, RoHS-compliant case with matte tin annealed terminals. Moisture sensitivity level 1 (J-STD-020).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Source terminal of N-channel channel | Reference node for gate drive; connects to ground or low-side return path in switch applications. |
| 2 (Gate) | Control electrode | Receives logic-level voltage to modulate channel conductivity; requires <203pC charge for full turn-on. |
| 3 (Drain) | Current output terminal | Carries switched load current; rated for 60V breakdown and 1.2A pulsed (10µs, 1% duty). |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) | 2.0Ω @ 10V ensures <230mW conduction loss at 380mA, reducing thermal stress in dense layouts. |
| Fast switching | tD(ON) = 3.9ns, tF = 9.9ns - Minimizes overlap loss in 500kHz+ DC-DC converters and motor gate drivers. |
| ESD protection | 2kV HBM - Eliminates need for external TVS in handheld and portable equipment I/O paths. |
| AEC-Q101 qualified | Qualified for automotive electronics - Validated for temperature cycling, humidity bias, and mechanical shock per stress test standards. |
| Green construction | Halogen- and antimony-free (<900ppm Br/Cl, <1000ppm Sb) - Meets EU ELV and OEM sustainability requirements. |
Applications
| Motor Control | LED Backlighting |
|---|---|
|
Use Scenario: Low-voltage DC fan or small stepper motor driver in consumer appliances. IC Role / Device Role / Timing Role: Low-side switch controlling current flow through motor winding. Use Value: 2Ω RDS(ON) limits power dissipation to <230mW at 380mA, enabling operation without heatsink in sealed enclosures. |
Use Scenario: Current regulation for white LED strings in LCD panel backlight modules. IC Role / Device Role / Timing Role: PWM-controlled current sink in constant-current LED driver stage. Use Value: Fast 9.9ns fall time ensures precise dimming resolution at >10kHz PWM frequencies without ghosting. |
| Power Management | Load Switching |
|
Use Scenario: Enable/disable rail in USB-powered IoT sensor nodes. IC Role / Device Role / Timing Role: High-side or low-side load switch managing power domain sequencing. Use Value: 1.0–2.5V VGS(TH) allows direct control from 1.8V/3.3V MCU GPIO, eliminating external level shifters. |
Use Scenario: Hot-swap protection and inrush limiting in industrial control I/O modules. IC Role / Device Role / Timing Role: Controlled power path switch with body diode reverse recovery managed by low Crss (2.9pF). Use Value: Low 2.9pF Crss minimizes Miller-induced shoot-through risk during fast turn-off transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3026L-7 | 30V V(BR)DSS, 0.11Ω RDS(ON) @ 10V, 3.4A ID - higher current, lower voltage rating | Better suited for 5V/12V logic-level loads; not interchangeable in 48V systems | Select when higher current and lower RDS(ON) are prioritized over 60V headroom. |
| AO3400 | 30V V(BR)DSS, 0.042Ω RDS(ON) @ 10V, 5.7A ID - significantly lower on-resistance but lower voltage rating | Requires redesign for ≤30V rails; unsuitable for 48V telecom or automotive battery inputs | Choose only if system voltage stays below 30V and thermal budget demands sub-50mΩ conduction loss. |
Compared with DMN3026L-7 and AO3400, the DMN63D1L-7 trades off higher RDS(ON) for 60V capability and AEC-Q101 qualification-making it uniquely suitable for 24–48V industrial controls and automotive cabin modules where voltage margin and reliability outweigh raw efficiency.
Availability
DMN63D1L-7 is available at Aetrix Electronics and suitable for motor control, LED backlighting, and power management applications requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for DMN63D1L-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability, energy-efficient components for automotive, industrial, and consumer markets.
The DMN63D1L-7 belongs to Diodes' "Logic-Level N-Channel MOSFET" product line, engineered for compact, low-power switching in space-constrained applications where gate drive simplicity and thermal robustness are essential.
FAQ
What is the maximum safe operating voltage for DMN63D1L-7?
The absolute maximum drain-source voltage is 60V (V(BR)DSS), verified per JEDEC JESD24-10. Operation above 54V is discouraged without derating for temperature and transients. The device enters avalanche mode beyond 60V, with energy handling limited by SOA curves in the datasheet (Figure 11).
Can DMN63D1L-7 be driven directly by a 3.3V microcontroller GPIO?
Yes - its gate threshold voltage (VGS(TH)) is specified from 1.0V to 2.5V at ID = 1mA, ensuring reliable turn-on with 3.3V logic. At VGS = 3.3V, RDS(ON) rises to ~4.5Ω (interpolated from Figure 8), delivering ~220mA continuous current with acceptable loss in low-duty-cycle applications.
Is DMN63D1L-7 suitable for reverse polarity protection?
No - as an N-channel MOSFET in SOT23, it lacks integrated body diode orientation for standard reverse-polarity schemes. When used in high-side configuration, the intrinsic body diode conducts in reverse fault condition. A dedicated P-channel or ideal diode controller is required for robust reverse-voltage blocking.
Does DMN63D1L-7 require a gate resistor for stability?
A gate resistor (typically 10–100Ω) is recommended to dampen ringing caused by gate loop inductance and Crss feedback. Without it, fast edges may excite parasitic oscillations, increasing EMI and dynamic losses. The 133Ω gate resistance (Rg) specified in the datasheet reflects internal structure-not an external requirement.
DMN63D1L-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 380mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.3 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 30 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 370mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
DMN63D1L-7 FAQ
1.How can I place an order for DMN63D1L-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN63D1L-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN63D1L-7 reliable?
The price and inventory of DMN63D1L-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN63D1L-7 is usually 5 days.
3.What payment methods are accepted for DMN63D1L-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN63D1L-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN63D1L-7?
DMN63D1L-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN63D1L-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN63D1L-7?
For technical support, including DMN63D1L-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN63D1L-7 requirements.
6.How does Aetrix verify that DMN63D1L-7 is sourced from the original manufacturer or authorized distributors?
All DMN63D1L-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN63D1L-7 meets industry standards.
7.What is the process for return or replacement of DMN63D1L-7?
All DMN63D1L-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN63D1L-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN63D1L-7 part is unused and in its original packaging.
Return procedure for DMN63D1L-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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