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Diodes Incorporated DMN63D1LDW-13
- Part No.:
- DMN63D1LDW-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
DMN63D1LDW-13.pdf
- Description:
- MOSFET 2N-CH 60V 0.25A SOT363
- Quantity:
- Payment:
- Shipping:
Inventory:8,411
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Product details
Overview
DMN63D1LDW-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT363 package, rated for 60V V(BR)DSS, 2Ω RDS(ON) @ VGS = 10V, and 250mA continuous drain current at +25°C. It integrates two matched low-threshold MOSFETs with ESD-protected gates and ultra-small footprint, designed for compact power switching in space-constrained motor control and load management circuits.
For engineers reviewing the DMN63D1LDW-13 datasheet, DMN63D1LDW-13 pinout, DMN63D1LDW-13 application, or DMN63D1LDW-13 equivalent, key selection criteria include dual-channel RDS(ON) matching, gate threshold voltage (1.0–2.5V), thermal resistance (414°C/W), low input capacitance (30pF), and AEC-Q101 qualification for automotive-grade reliability.
Technical Context
This dual MOSFET implements two independent N-channel silicon devices in a single SOT363 package, sharing no internal connection between channels. Each channel features a low 1.6V typical gate threshold and fast switching (tD(ON) = 3.9ns, tD(OFF) = 15.7ns) under 10V drive, enabling efficient PWM-based load control.
Thermal performance is defined by two distinct power dissipation ratings: 310mW (FR-4 PCB, minimum pad) and 390mW (1"×1" 2oz copper), with corresponding junction-to-ambient thermal resistances of 414°C/W and 324°C/W. The device includes integrated gate protection diodes and meets AEC-Q101 stress test requirements for automotive use.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 60V - Maximum blocking voltage before avalanche conduction; supports 24V/48V rail switching with margin. |
| RDS(ON) max | 2.0Ω @ VGS = 10V - Ensures ≤500mW conduction loss at 250mA; critical for thermally limited PCB layouts. |
| ID max | 250mA @ TA = +25°C - Continuous per-channel current rating; derates to 200mA at +70°C ambient. |
| VGS(TH) | 1.0–2.5V - Enables direct drive from 3.3V logic without level-shifting; reduces gate driver complexity. |
| Ciss | 30pF - Low input capacitance minimizes gate drive energy and speeds up turn-on; supports >1MHz PWM. |
| Qg | 304pC - Total gate charge determines required drive current for specified switching speed and losses. |
| TJ range | −55°C to +150°C - Extended junction temperature enables operation in under-hood automotive environments. |
Pinout & Package
SOT363 surface-mount package: 6-pin, ultra-small outline (2.15mm × 2.10mm × 0.95mm), matte tin-plated alloy-42 leadframe, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S1) | Source of Channel 1 | Low-side return path for first MOSFET; internally connected to pin 2 in common-source configuration. |
| 2 (D1) | Drain of Channel 1 | High-side switching node for Channel 1; connects to load or supply rail. |
| 3 (G1) | Gate of Channel 1 | Control input for Channel 1; ESD-protected; requires <2.5V to fully enhance. |
| 4 (G2) | Gate of Channel 2 | Independent control input for Channel 2; electrically isolated from G1. |
| 5 (D2) | Drain of Channel 2 | High-side switching node for Channel 2; separate from D1 for dual-load isolation. |
| 6 (S2) | Source of Channel 2 | Low-side return path for second MOSFET; not internally tied to S1. |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent N-channel topology | Two isolated MOSFETs in one SOT363 package-reduces board area by ~40% vs. discrete SOT23 solutions. |
| Low gate threshold voltage | 1.0–2.5V VGS(TH)-enables full enhancement from 3.3V microcontroller GPIO without external biasing. |
| ESD-protected gate structure | HBM rating ≥2kV-eliminates need for external gate protection in standard industrial environments. |
| AEC-Q101 qualified | Passed stress tests including HTGB, HTRB, and TC025-validates suitability for automotive body electronics. |
| Ultra-low leakage | IDSS ≤1.0µA @ VDS = 60V-minimizes standby power loss in always-on battery-powered systems. |
Applications
| Brushless DC Motor Driver Stage | Automotive LED Headlamp Dimming |
|---|---|
|
Use Scenario: Half-bridge high-side/low-side switching in 12V BLDC fan controllers for HVAC modules. IC Role / Device Role / Timing Role: Dual-channel MOSFET provides synchronous rectification and PWM-controlled phase current commutation. Use Value: Matched RDS(ON) and fast switching (tF = 9.9ns) reduce conduction and transition losses, improving efficiency by ≥3% over discrete alternatives. |
Use Scenario: Independent current regulation for daytime running lights (DRL) and adaptive front-lighting system (AFS) zones. IC Role / Device Role / Timing Role: Dual low-threshold MOSFET acts as parallel load switches enabling zone-level brightness control via PWM. Use Value: 1.6V typical VGS(TH) allows direct MCU PWM drive at 3.3V, eliminating level shifters and reducing BOM count by one IC per channel. |
| USB-C Power Delivery Load Switch | Industrial Sensor Node Power Gating |
|
Use Scenario: Dual-path 5V/20V load switching in USB-C PD sink applications with overvoltage and reverse-current protection. IC Role / Device Role / Timing Role: One channel controls main power path; second handles auxiliary rail or protection circuit enable. Use Value: Low 30pF Ciss and 304pC Qg support clean 500kHz–1MHz switching without gate oscillation or excessive drive loss. |
Use Scenario: Periodic wake-up and sensor activation in battery-powered IIoT nodes with multi-rail subsystems (MCU, RF, analog front-end). IC Role / Device Role / Timing Role: Dual switch isolates power domains during deep-sleep mode to achieve sub-1µA system quiescent current. Use Value: IDSS ≤1.0µA ensures total off-state leakage remains below 2µA across both channels-critical for >5-year battery life. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN63D1LDWQ-13 | AEC-Q101 qualified variant with same electrical specs; differs only in traceability marking and enhanced lot-control documentation. | Required for Tier-1 automotive production where PPAP submission and full material traceability are mandated. | Select when automotive OEM compliance (IATF 16949) and full lot history are contractually required. |
| NTJD4152PT1G | Higher RDS(ON) (3.5Ω @ VGS = 4.5V); lower V(BR)DSS (30V); smaller 0.5pC Qgs but higher Crss (4.5pF). | Suitable only for ≤12V systems; lacks AEC-Q101 qualification and fails thermal margin in 24V motor control. | Acceptable for cost-sensitive consumer-grade 3.3V/5V logic-level switching where 60V rating and automotive qualification are unnecessary. |
Compared with DMN63D1LDW-13, the DMN63D1LDWQ-13 adds automotive traceability without electrical trade-offs, while NTJD4152PT1G sacrifices voltage rating and reliability for lower unit cost in non-automotive 12V applications.
Availability
DMN63D1LDW-13 is available at Aetrix Electronics and suitable for motor control, automotive lighting, and USB-C power delivery applications requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.
Supply support for DMN63D1LDW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions, with design centers in Asia, Europe, and the U.S., serving industrial, automotive, and consumer markets.
This device belongs to Diodes' AEC-Q101-qualified small-signal MOSFET product line, engineered for high-reliability power switching in space-constrained automotive body electronics and portable industrial equipment.
FAQ
What is the maximum safe operating voltage for DMN63D1LDW-13?
The absolute maximum drain-source voltage is 60V DC, verified per DS38033 Rev. 1-2 Section "Maximum Ratings." Operation above this value risks avalanche breakdown and permanent damage. Derating to 48V is recommended for designs requiring long-term reliability under transient conditions such as load dump in automotive 24V systems.
Can DMN63D1LDW-13 be used in a synchronous buck converter topography?
No-this device lacks an integrated body diode optimized for synchronous rectification and has no guaranteed reverse recovery characteristics. Its body diode forward voltage is 0.75–1.1V, and reverse recovery time is unspecified. It is intended for low-side switching or discrete half-bridge configurations-not as a synchronous rectifier replacement for dedicated power MOSFETs.
Is thermal pad connection required for DMN63D1LDW-13 on PCB layout?
No thermal pad is present in the SOT363 package; heat dissipation relies entirely on copper traces connected to pins 1 (S1), 2 (D1), 5 (D2), and 6 (S2). Per datasheet Note 5, minimum recommended pad layout uses 0.65mm pitch and 0.42mm width traces; doubling copper weight to 2oz increases PD from 310mW to 390mW.
Does DMN63D1LDW-13 support 1.8V logic-level gate drive?
No-its minimum guaranteed VGS(TH) is 1.0V, but typical turn-on occurs at 1.6V and full enhancement requires ≥4.5V per RDS(ON) test condition. At 1.8V, ID is <1mA (per Figure 5), insufficient for 250mA load switching. Use only with 3.3V or higher logic families.
DMN63D1LDW-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 250mA
- Rds On (Max) @ Id, Vgs:
- 2Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 30pF @ 25V
- Power - Max:
- 310mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-363
DMN63D1LDW-13 FAQ
1.How can I place an order for DMN63D1LDW-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN63D1LDW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN63D1LDW-13 reliable?
The price and inventory of DMN63D1LDW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN63D1LDW-13 is usually 5 days.
3.What payment methods are accepted for DMN63D1LDW-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN63D1LDW-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN63D1LDW-13?
DMN63D1LDW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN63D1LDW-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN63D1LDW-13?
For technical support, including DMN63D1LDW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN63D1LDW-13 requirements.
6.How does Aetrix verify that DMN63D1LDW-13 is sourced from the original manufacturer or authorized distributors?
All DMN63D1LDW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN63D1LDW-13 meets industry standards.
7.What is the process for return or replacement of DMN63D1LDW-13?
All DMN63D1LDW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN63D1LDW-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN63D1LDW-13 part is unused and in its original packaging.
Return procedure for DMN63D1LDW-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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