Diodes Incorporated DMN63D1LDW-7

Overview

DMN63D1LDW-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT363 package, rated for 60V V(BR)DSS, 2Ω RDS(ON) @ VGS = 10V, and 250mA continuous drain current at +25°C. It features low gate threshold voltage (1.0–2.5V), fast switching speed, and ESD-protected gates-designed for compact, high-efficiency power management in space-constrained motor control and load switching circuits.

For engineers reviewing the DMN63D1LDW-7 datasheet, DMN63D1LDW-7 pinout, DMN63D1LDW-7 application, or DMN63D1LDW-7 equivalent, this page delivers verified electrical parameters, thermal behavior under pulsed operation, gate charge metrics (Qg = 304 pC), junction-to-ambient thermal resistance (RθJA = 414 °C/W), and AEC-Q101 qualification status for automotive-grade reliability assessment.

Technical Context

This dual MOSFET integrates two independent N-channel devices sharing no internal connection-each with separate source, drain, and gate terminals. Its low RDS(ON) at 5V drive (3Ω) enables direct logic-level interfacing with 3.3V/5V microcontrollers without gate drivers.

The device uses silicon process optimization to balance conduction loss and switching loss: Ciss = 30 pF, Crss = 2.9 pF, and tD(OFF) = 15.7 ns support efficient PWM operation up to several hundred kHz in DC-DC converters and H-bridge motor drivers.

Key Specifications

Pinout & Package

SOT363 ultra-small surface-mount package (2.15 × 2.10 × 0.95 mm), molded plastic body with matte tin-plated alloy 42 leadframe, moisture sensitivity level 1, UL 94V-0 rated.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Compared with DMN63D1LDWQ-7, the -7 variant offers identical performance at lower cost and shorter lead time but excludes automotive traceability data; versus DMN3026LSD-13, it saves 30% board area and simplifies routing while maintaining matching voltage/current capability.

Availability

DMN63D1LDW-7 is available at Aetrix Electronics and suitable for motor control, power management, LED driver, and automotive body electronics requiring stable component supply across prototyping, NPI, and volume production phases.

Supply support for DMN63D1LDW-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal ICs, with manufacturing and test facilities across Asia and design centers in the US, UK, and Taiwan.

This part belongs to Diodes' PowerMOS™ family, engineered for high-efficiency, space-constrained power switching in consumer, industrial, and automotive systems where low RDS(ON), fast switching, and robust gate protection are critical.

FAQ

What is the maximum safe operating temperature for DMN63D1LDW-7?

The device has an operating junction temperature range of –55°C to +150°C. Under continuous DC operation on a standard FR-4 PCB with minimum pad layout, thermal limits constrain power dissipation to 310 mW at +25°C ambient. Derating curves in Figure 2 show RDS(ON) increases by ~25% at +125°C junction, requiring careful thermal design in enclosed environments.

Can DMN63D1LDW-7 be used in high-side switching configurations?

Yes-each channel operates independently, so Pin 6 (S2) can serve as a floating source node. When used as a high-side switch, the gate must be driven above the source potential (e.g., via charge pump or bootstrap circuit). The ±20V VGS rating and 60V VDSS support such topologies, but the lack of integrated level-shifting circuitry means external gate drive design is required.

Is DMN63D1LDW-7 compatible with lead-free reflow soldering processes?

Yes-it is fully RoHS-compliant and qualified for lead-free reflow per JEDEC J-STD-020. The matte tin finish on alloy 42 leads is rated for peak temperatures up to 260°C (10-second exposure), and moisture sensitivity level 1 allows unlimited floor life at ≤30°C/60% RH without dry-pack requirements.

Does the device include body diodes, and what are their forward voltage characteristics?

Each MOSFET includes an intrinsic body diode (S→D). The typical forward voltage is 0.75 V at IS = 115 mA and 25°C (max 1.1 V), as specified in the Electrical Characteristics table. These diodes support freewheeling in inductive loads but are not optimized for high-current reverse conduction-external Schottky diodes are recommended for >200 mA recovery paths.