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Diodes Incorporated DMN63D1LV-7
- Part No.:
- DMN63D1LV-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-563, SOT-666
- Datasheet:
-
DMN63D1LV-7.pdf
- Description:
- MOSFET 2N-CH 60V 0.55A SOT563
- Quantity:
- Payment:
- Shipping:
Inventory:2,002
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Product details
Overview
DMN63D1LV-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT563 package, rated for 60V VDSS, 2Ω RDS(ON) @ 10V VGS, and 550mA continuous drain current at +25°C. It integrates two matched low-RDS(ON) switches with ESD protection (2kV HBM), optimized for compact power management in space-constrained motor control and backlighting circuits.
For engineers reviewing the DMN63D1LV-7 datasheet, DMN63D1LV-7 pinout, DMN63D1LV-7 application, or DMN63D1LV-7 equivalent, key selection criteria include dual-channel integration in SOT563, gate threshold voltage (1.0–2.5V), low input capacitance (30pF Ciss), fast switching (tD(ON) = 3.9ns), and AEC-Q101 qualification for automotive-grade reliability.
Technical Context
This dual MOSFET employs planar silicon technology with integrated gate protection diodes per channel, enabling independent high-side or low-side switching in half-bridge or load-switch configurations. Its 60V breakdown rating and 1.2A pulsed drain current support transient-tolerant operation in 24V industrial bus systems.
The device delivers stable RDS(ON) across temperature (±20% variation from –55°C to +150°C at VGS = 10V) and features low Qg (392pC) and Qgd (92pC), minimizing drive loss and improving efficiency in PWM-driven applications like LED dimming and DC motor commutation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60V - Withstands up to 60V drain-source voltage before avalanche conduction, suitable for 24V/36V rail systems with margin. |
| RDS(ON) @ 10V | 2.0Ω - Enables <1.1W conduction loss at 550mA, critical for thermally constrained PCB layouts. |
| RDS(ON) @ 5V | 3.0Ω - Ensures functional switching with standard 5V logic-level gate drive without level-shifting circuitry. |
| Ciss | 30pF - Reduces gate drive power and speeds up turn-on, supporting >1MHz PWM in LED backlight drivers. |
| tD(ON) | 3.9ns - Minimizes dead-time requirements in synchronous rectification and half-bridge topologies. |
| Qg | 392pC - Matches low-power microcontroller GPIOs with minimal external driver overhead. |
| TJ Range | –55°C to +150°C - Qualified per AEC-Q101, enabling use in under-hood automotive modules and industrial motor controllers. |
Pinout & Package
Package: SOT563 - ultra-compact 6-pin surface-mount package (2.2mm × 1.35mm × 0.6mm), lead-free, halogen-free, and RoHS-compliant. Molded plastic case with UL 94V-0 flammability rating and moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| S1 | Source of Channel 1 | Low-side return path for first MOSFET; internally tied to substrate in standard configuration. |
| D1 | Drain of Channel 1 | High-current output node for Channel 1; electrically isolated from D2/S2 in dual-die construction. |
| G1 | Gate of Channel 1 | Control terminal for Channel 1; includes integrated ESD protection diode to S1. |
| D2 | Drain of Channel 2 | Independent high-current output node for second MOSFET; enables dual-load or complementary switching. |
| S2 | Source of Channel 2 | Separate return path for Channel 2; allows floating or independently biased source configurations. |
| G2 | Gate of Channel 2 | Isolated control terminal for Channel 2; no internal coupling to G1, supporting asynchronous operation. |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel topology | Two independent, matched MOSFETs in one SOT563 footprint-reduces board area by ~40% vs. discrete SOT23 solutions. |
| Low RDS(ON) @ 5V | 3.0Ω at VGS = 5V enables direct interface with 5V microcontrollers and logic ICs without gate drivers. |
| ESD protection | 2kV HBM on all pins eliminates need for external TVS diodes in low-energy I/O interfaces. |
| AEC-Q101 qualified | Validated for automotive applications including body control modules and HVAC actuators per stress test requirements. |
| Low Ciss/Coss ratio | Ciss = 30pF, Coss = 4.2pF - improves Miller immunity and reduces switching noise in noisy environments. |
Applications
| Motor Control | LED Backlighting |
|---|---|
Use Scenario: Driving small DC brush motors in automotive HVAC actuators and printer paper feed mechanisms. IC Role / Device Role / Timing Role: Dual low-side switch controlling direction and enable via independent gate signals; supports bidirectional PWM at 20kHz. Use Value: Low RDS(ON) minimizes heat rise in sealed enclosures; dual-channel layout simplifies PCB routing for H-bridge half-bridge implementation. |
Use Scenario: Current regulation for white LED strings in automotive instrument clusters and infotainment displays. IC Role / Device Role / Timing Role: Synchronous PWM dimming switch replacing discrete transistors; operates at 1–5kHz with precise duty-cycle control. Use Value: Fast tF (9.9ns) ensures sharp current transitions, reducing visible flicker; low Qg lowers MCU GPIO loading. |
| Power Management | Load Switching |
Use Scenario: Dual-rail power sequencing in portable medical devices requiring independent 3.3V and 5V domain control. IC Role / Device Role / Timing Role: Independent load switch for each supply rail; controlled by separate enable lines with soft-start capability. Use Value: Low leakage (<1µA IDSS) prevents battery drain during standby; thermal derating curve supports 450mW dissipation on FR-4. |
Use Scenario: Hot-swap protection and inrush limiting for USB-C peripheral ports in industrial docking stations. IC Role / Device Role / Timing Role: High-side load switch with controlled turn-on slope; gate driven through RC network to limit dI/dt. Use Value: Matched RDS(ON) between channels ensures balanced current sharing in redundant paths; AEC-Q101 rating adds robustness against ESD events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN63D1LDW-7 | Same die, WDFN-6 (2×2mm) package - 30% larger footprint but 2.5× lower RθJA (110°C/W vs. 283°C/W). | Better thermal performance in high-duty-cycle applications; requires different PCB land pattern and stencil. | Select when PD > 300mW sustained or ambient exceeds +70°C; avoid if board space is constrained. |
| AO6402 | 60V/550mA dual N-MOSFET in SOT563, but RDS(ON) = 2.8Ω @ 4.5V and no AEC-Q101 qualification. | Lacks automotive reliability validation; higher gate charge (520pC) increases drive loss at high frequency. | Acceptable for cost-sensitive consumer electronics where AEC-Q101 is not required and switching frequency <500kHz. |
Compared with DMN63D1LV-7, DMN63D1LDW-7 offers superior thermal handling for continuous loads, while AO6402 trades qualification and efficiency for lower unit cost in non-automotive designs - selection hinges on thermal budget, reliability tier, and drive voltage constraints.
Availability
DMN63D1LV-7 is available at Aetrix Electronics and suitable for motor control, LED backlighting, power management, and load switching applications requiring stable component supply, automotive-grade qualification, and compact dual-MOSFET integration.
Supply support for DMN63D1LV-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for automotive, industrial, and consumer markets.
The DMN63D1LV-7 belongs to Diodes' AEC-Q101-qualified small-signal MOSFET product line, engineered for space-constrained, thermally demanding applications where dual-channel integration and gate-drive simplicity are critical design priorities.
FAQ
What is the maximum continuous drain current for DMN63D1LV-7 at +70°C ambient?
The maximum continuous drain current is 450mA at TA = +70°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SOT563 package on standard FR-4 PCBs; actual current capability depends on copper area, airflow, and board stack-up.
Can DMN63D1LV-7 be used in a high-side switch configuration?
Yes - each channel operates as a standalone N-channel MOSFET and can be configured as a high-side switch when paired with a gate driver that provides VGS ≥ 10V above the source potential. The device does not integrate a charge pump, so external level-shifting is required for true high-side operation above 5V rails.
Does DMN63D1LV-7 include body diodes, and what is their forward voltage?
Yes - each channel includes an intrinsic body diode. At IS = 115mA and TJ = 25°C, the typical forward voltage (VSD) is 0.75V, with a maximum of 1.2V. These diodes support freewheeling in inductive loads but are not optimized for reverse recovery speed.
What is the gate threshold voltage range, and how does it vary with temperature?
VGS(TH) is specified from 1.0V to 2.5V at ID = 1mA and TA = +25°C. Figure 8 shows it decreases linearly with junction temperature - from ~2.2V at –55°C to ~1.4V at +150°C - ensuring consistent turn-on behavior across automotive operating ranges.
DMN63D1LV-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 550mA (Ta)
- Rds On (Max) @ Id, Vgs:
- 2Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.392nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 30pF @ 25V
- Power - Max:
- 940mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-563
DMN63D1LV-7 FAQ
1.How can I place an order for DMN63D1LV-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN63D1LV-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN63D1LV-7 reliable?
The price and inventory of DMN63D1LV-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN63D1LV-7 is usually 5 days.
3.What payment methods are accepted for DMN63D1LV-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN63D1LV-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN63D1LV-7?
DMN63D1LV-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN63D1LV-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN63D1LV-7?
For technical support, including DMN63D1LV-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN63D1LV-7 requirements.
6.How does Aetrix verify that DMN63D1LV-7 is sourced from the original manufacturer or authorized distributors?
All DMN63D1LV-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN63D1LV-7 meets industry standards.
7.What is the process for return or replacement of DMN63D1LV-7?
All DMN63D1LV-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN63D1LV-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN63D1LV-7 part is unused and in its original packaging.
Return procedure for DMN63D1LV-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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