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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Diodes Incorporated DMN63D1LVQ-13

Name: DMN63D1LVQ-13
Brand: Diodes Incorporated
SKU: DMN63D1LVQ-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN63D1LVQ-13

Manufacturer:: Diodes Incorporated

Category:: FET, MOSFET Arrays

Package:: SOT-563, SOT-666

Datasheet:: DMN63D1LVQ-13.pdf

Description:: MOSFET 2N-CH 60V 0.477A SOT563

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Product details

Overview

DMN63D1LVQ-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT563 package, rated for 60V V_DSS, 2Ω R_DS(ON) @ V_GS = 10V, and 477mA continuous drain current at +25°C. It features ESD protection, low input capacitance (41pF C_iss), and fast switching (t_F = 14.3ns), targeting automotive motor control and backlighting circuits.

For engineers reviewing the DMN63D1LVQ-13 datasheet, DMN63D1LVQ-13 pinout, DMN63D1LVQ-13 application, or DMN63D1LVQ-13 equivalent, this page delivers verified AEC-Q101 qualification status, thermal resistance (R_θJA = 133°C/W with copper pad), gate threshold range (1.0–2.5V), body diode forward voltage (0.8–1.2V), and dual-channel layout implications for space-constrained PCBs.

Technical Context

This dual MOSFET integrates two independent N-channel devices sharing a common source configuration per channel (S1/D1/G1 and S2/D2/G2), enabling compact half-bridge or load-switch topologies. Its 60V breakdown voltage supports 12V/24V automotive bus systems, while low R_DS(ON) at 5V gate drive (3Ω) ensures compatibility with standard logic-level microcontrollers.

The device operates across –55°C to +150°C junction temperature, with normalized on-resistance variation ≤1.8× over that range. Gate charge values (Q_g = 1.04nC @ 10V, Q_gd = 0.18nC) support efficient PWM operation up to several hundred kHz without excessive driver loss.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60V - Withstands transients in 24V automotive systems without avalanche conduction.
R_DS(ON)	2.0Ω @ V_GS = 10V - Enables <100mW conduction loss at 477mA, critical for thermally constrained modules.
I_D (max)	477mA @ T_A = +25°C - Supports small-signal motor drivers and LED current regulation in compact footprints.
C_iss	41pF - Reduces gate drive power and enables faster turn-on with minimal overshoot in low-power switching.
t_F	14.3ns - Limits switching losses during high-frequency PWM dimming of automotive displays.
V_GS(TH)	1.0–2.5V - Ensures reliable turn-on with 3.3V or 5V MCU GPIOs without level-shifting circuitry.
R_θJA	133°C/W (with 1-inch² copper) - Allows sustained 450mW dissipation at ambient ≤85°C in production-grade layouts.

Pinout & Package

Package: SOT563 - 6-pin ultra-small surface-mount package (1.60 × 1.60 × 0.60 mm), halogen- and antimony-free, RoHS-compliant, moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
G1	Gate of Channel 1	Independent control input for first N-MOSFET; requires <1.04nC total charge for full turn-on.
S1	Source of Channel 1	Common reference node for Channel 1; tied to ground or low-side return path in half-bridge use.
D1	Drain of Channel 1	High-side switching node for Channel 1; connects to load or supply rail depending on topology.
G2	Gate of Channel 2	Independent control input for second N-MOSFET; electrically isolated from G1.
S2	Source of Channel 2	Common reference node for Channel 2; may be tied to S1 or kept separate for dual-load isolation.
D2	Drain of Channel 2	High-side switching node for Channel 2; enables dual independent loads or complementary drive.

Key Features

Feature	Design Value
Dual N-channel topology	Two fully isolated MOSFETs in one SOT563 footprint-reduces board area by ~40% vs. discrete SOT23 pairs.
AEC-Q101 qualification	Validated for automotive underhood environments including thermal cycling, humidity bias, and mechanical shock per IATF 16949 process controls.
Low R_DS(ON) at 5V	3.0Ω @ V_GS = 5V - Eliminates need for gate boosters in 5V MCU-driven backlight dimming circuits.
ESD protection	HBM ±2kV - Prevents field failure during automated assembly and handling in Tier-1 manufacturing lines.
Low leakage	I_DSS ≤ 1.0µA @ V_DS = 60V - Maintains battery-off current below 2µA in always-on automotive modules.

Applications

Automotive Motor Control

LED Backlight Dimming

Use Scenario: Driving small DC motors in HVAC actuators or mirror positioners within passenger compartment modules.

IC Role / Device Role / Timing Role: Dual low-side switch controlling direction and enable via independent gate signals; operates at <1kHz PWM frequency.

Use Value: 2Ω R_DS(ON) limits resistive heating to <500mW at stall current, enabling conformal-coated PCB mounting without heatsinks.

Use Scenario: PWM-controlled current regulation for instrument cluster LCD backlight LEDs in 12V vehicle systems.

IC Role / Device Role / Timing Role: Dual-channel constant-current sink; each channel drives parallel LED strings with synchronized 200Hz–1kHz dimming.

Use Value: Fast 14.3ns fall time ensures precise duty-cycle fidelity at 1kHz, eliminating visible flicker under camera capture.

Power Management Switching

Body Control Module Loads

Use Scenario: Independent enable switches for USB-C PD port power delivery and CAN transceiver VCC rails in gateway ECUs.

IC Role / Device Role / Timing Role: Dual load switch managing power sequencing; controlled by 3.3V microcontroller GPIOs with soft-start via gate resistor.

Use Value: 1.0–2.5V V_GS(TH) guarantees turn-on with 3.3V logic; <1µA I_DSS prevents standby current leakage in sleep mode.

Use Scenario: Driving solenoid-based door lock actuators and interior lighting relays in BCM assemblies.

IC Role / Device Role / Timing Role: High-side switch replacement using external bootstrap or charge-pump circuit; dual channels manage paired loads.

Use Value: 60V V_DSS withstands load-dump transients up to ISO 7637-2 Pulse 5a (75V/350ms), eliminating need for TVS clamping per channel.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN63D1LDWQ-7	Same die, SOT363 package (larger footprint, higher R_θJA = 200°C/W), 3000-reel packaging.	Less suitable for ultra-dense automotive modules due to 2.1× larger area and reduced thermal performance.	Select when legacy SOT363 layout reuse is required and thermal margin >40°C exists.
DMN3029LSD-13	Single-channel 30V/2.9Ω MOSFET in SOT23-6; no dual integration, lower voltage rating.	Requires two devices for dual functionality; unsuitable for 60V transient environments like load dump.	Choose only for non-automotive 3.3V/5V logic-level applications where 30V rating suffices and board area is not constrained.

Compared with DMN63D1LVQ-13, DMN63D1LDWQ-7 trades miniaturization for easier hand-soldering and lower cost-per-unit in low-volume builds, while DMN3029LSD-13 sacrifices integration and voltage robustness to reduce gate charge (0.6nC) for higher-frequency switching beyond 1MHz.

Availability

DMN63D1LVQ-13 is available at Aetrix Electronics and suitable for automotive motor control, LED backlight dimming, and power management switching requiring stable component supply across extended temperature ranges and AEC-Q101 compliance.

Supply support for DMN63D1LVQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions, with design centers across Asia, Europe, and the U.S., and manufacturing in IATF 16949-certified facilities.

The DMN63D1LVQ belongs to Diodes' AEC-Q101-qualified automotive MOSFET product line, engineered specifically for space-constrained, thermally demanding functions such as body electronics, infotainment backlighting, and small-motor actuation.

FAQ

Is DMN63D1LVQ-13 qualified for automotive use?

Yes. The DMN63D1LVQ-13 is fully AEC-Q101 qualified, PPAP-capable, and manufactured in IATF 16949 certified facilities. It meets requirements for temperature cycling, humidity bias, and mechanical shock testing per automotive standards, and carries full change control documentation for Tier-1 supplier audits.

What is the maximum safe operating frequency for PWM switching?

Based on measured t_F = 14.3ns and t_D(OFF) = 37.8ns, the device supports clean PWM operation up to 300kHz in typical 12V load-switch applications. At higher frequencies, gate drive strength and PCB layout parasitics become limiting factors-not intrinsic device speed.

Can both channels be used in parallel to increase current capacity?

No. The channels are electrically isolated but share thermal coupling in the SOT563 package. Parallel use does not double current rating due to mismatched R_DS(ON) and thermal runaway risk. Maximum continuous current remains 477mA per channel, derated per R_θJA and ambient conditions.

Does the body diode support reverse-current freewheeling in inductive loads?

Yes. Each channel includes an integrated body diode with V_SD = 0.8–1.2V at 115mA, rated for continuous forward current up to 477mA. It is suitable for flyback energy recirculation in brushed DC motor drivers, provided peak diode current stays within SOA limits shown in Figure 12.

DMN63D1LVQ-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: SOT-563, SOT-666

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 N-Channel

FET Feature:: -

Drain to Source Voltage (Vdss):: 60V

Current - Continuous Drain (Id) @ 25°C:: 477mA (Ta)

Rds On (Max) @ Id, Vgs:: 2Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 1.04nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:: 41pF @ 30V

Power - Max:: 450mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-563

DMN63D1LVQ-13 FAQ

1.How can I place an order for DMN63D1LVQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN63D1LVQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN63D1LVQ-13 reliable?

The price and inventory of DMN63D1LVQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN63D1LVQ-13 is usually 5 days.

3.What payment methods are accepted for DMN63D1LVQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN63D1LVQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN63D1LVQ-13?

DMN63D1LVQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN63D1LVQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN63D1LVQ-13?

For technical support, including DMN63D1LVQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN63D1LVQ-13 requirements.

6.How does Aetrix verify that DMN63D1LVQ-13 is sourced from the original manufacturer or authorized distributors?

All DMN63D1LVQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN63D1LVQ-13 meets industry standards.

7.What is the process for return or replacement of DMN63D1LVQ-13?

All DMN63D1LVQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN63D1LVQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN63D1LVQ-13 part is unused and in its original packaging.

Return procedure for DMN63D1LVQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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