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Diodes Incorporated DMN63D1LVQ-7
- Part No.:
- DMN63D1LVQ-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-563, SOT-666
- Datasheet:
-
DMN63D1LVQ-7.pdf
- Description:
- MOSFET 2N-CH 60V 0.477A SOT563
- Quantity:
- Payment:
- Shipping:
Inventory:2,030
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Product details
Overview
DMN63D1LVQ-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT563 package, rated for 60V VDSS, 2Ω RDS(ON) @ 10V VGS, and 477mA continuous drain current at +25°C. It features ESD protection, low input capacitance (41pF Ciss), and fast switching (tF = 14.3ns), designed for automotive motor control and backlighting power management.
For engineers reviewing the DMN63D1LVQ-7 datasheet, DMN63D1LVQ-7 pinout, DMN63D1LVQ-7 application, or DMN63D1LVQ-7 equivalent, this page delivers verified AEC-Q101 qualification status, thermal resistance (RθJA = 133°C/W with copper pad), gate threshold range (1.0–2.5V), body diode forward voltage (0.8–1.2V), and dual-channel layout constraints for space-constrained PCBs.
Technical Context
This dual MOSFET integrates two matched N-channel silicon devices in a single SOT563 package, sharing no internal connection between channels-each channel operates independently with separate gate, source, and drain terminals. Its low RDS(ON) at 5V drive (3Ω) supports 3.3V/5V logic-level control in automotive subsystems without level-shifting.
The device uses planar trench-gate technology to achieve low gate charge (Qg = 1.04nC @ 10V), enabling efficient PWM operation up to several hundred kHz. Thermal performance is specified under two mounting conditions: 283°C/W on minimal FR-4 pad and 133°C/W with 1-inch² copper plate-critical for sustained 450mW–940mW power dissipation in ambient-limited environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60V - Withstands transient overvoltage up to 60V in automotive 12V systems without breakdown. |
| RDS(ON) | 2.0Ω @ VGS = 10V - Enables <477mA continuous load with ≤0.45W conduction loss at full current. |
| ID (max) | 477mA @ TA = +25°C - Supports small-signal motor drivers and LED current paths in instrument clusters. |
| Ciss | 41pF - Reduces gate drive power and enables clean edge transitions in low-power switching nodes. |
| tF | 14.3ns - Limits switching losses during turn-off in PWM dimming circuits operating above 100kHz. |
| VGS(TH) | 1.0–2.5V - Ensures reliable turn-on with standard microcontroller GPIO outputs (3.3V/5V). |
| RθJA | 133°C/W (with 1″² copper) - Allows ~70°C junction rise at 940mW dissipation, supporting operation up to +85°C ambient. |
Pinout & Package
Package: SOT563 - 6-pin ultra-small surface-mount package (1.60 × 1.60 × 0.60 mm), halogen- and antimony-free, matte tin-plated leadframe, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G1 | Gate of Channel 1 | Independent control input; requires <1.04nC charge for full turn-on; referenced to S1. |
| S1 | Source of Channel 1 | Return path for Channel 1; electrically isolated from S2; used for local ground referencing. |
| D1 | Drain of Channel 1 | High-side or low-side switch node; supports bidirectional body diode conduction (VSD = 0.8–1.2V). |
| G2 | Gate of Channel 2 | Independent control input; identical electrical characteristics to G1; no internal coupling to G1. |
| S2 | Source of Channel 2 | Return path for Channel 2; isolated from S1; enables dual independent half-bridge configurations. |
| D2 | Drain of Channel 2 | Second switching node; supports same voltage/current ratings as D1; no shared substrate connection. |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent N-channel topology | Enables compact dual-load control (e.g., H-bridge leg pair or dual LED strings) without cross-talk or shared thermal path. |
| AEC-Q101 qualified & PPAP capable | Validated for automotive use per stress test requirements including HTGB, HTRB, and temperature cycling-no derating needed in qualified designs. |
| Low RDS(ON) at 5V VGS | 3.0Ω maximum enables direct drive from 5V MCU I/O pins, eliminating external level shifters in cost-sensitive modules. |
| ESD protection (HBM >2kV) | Integrated gate protection diodes prevent latch-up or oxide damage during board handling and in-system hot-plug events. |
| Green, RoHS-compliant construction | Mold compound meets UL 94V-0 flammability rating and contains <900ppm Br/Cl and <1000ppm Sb-compliant with automotive ELV directives. |
Applications
| Automotive Instrument Cluster Backlighting | Small DC Motor Control (e.g., HVAC Flap Actuator) |
|---|---|
|
Use Scenario: Driving parallel white LED strings in digital dashboard displays requiring precise current regulation and PWM dimming. IC Role / Device Role / Timing Role: Dual-channel low-side switch controlling cathode current paths; each channel handles one LED string with independent PWM timing. Use Value: 2Ω RDS(ON) limits conduction loss to <0.45W per channel at 477mA, reducing thermal load in sealed cluster housings. |
Use Scenario: Bidirectional control of 12V brushed DC motors in climate control air flap actuators. IC Role / Device Role / Timing Role: Two independent switches configured as half-bridge legs; G1/D1/S1 and G2/D2/S2 form complementary drive paths. Use Value: Matched RDS(ON) and fast tF (14.3ns) ensure symmetrical turn-off timing, minimizing shoot-through risk during direction reversal. |
| Automotive Body Control Module (BCM) Load Switching | Automotive Interior Lighting Sequencing |
|
Use Scenario: Managing multiple low-current loads (e.g., door lock solenoids, mirror heaters) with individual fault detection. IC Role / Device Role / Timing Role: Dual discrete switch replacing discrete FET+driver combos; each channel provides controlled inrush and overcurrent limiting. Use Value: Low input leakage (<10µA IGSS) prevents unintended wake-up in sleep mode; ESD protection ensures robustness in noisy BCM environments. |
Use Scenario: Sequential activation of ambient LED zones (footwell, cupholder, console) using timed PWM bursts. IC Role / Device Role / Timing Role: Independent channel switching synchronized to microcontroller timer outputs for staggered illumination patterns. Use Value: Fast tD(OFF) (37.8ns) allows sub-microsecond channel isolation, enabling precise inter-zone timing gaps down to 100ns resolution. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN63D1LDWQ-7 | Same die, WDFN-6 (2×2mm) package; RθJA = 100°C/W (improved thermal performance); higher ID = 650mA. | Better suited for thermally constrained layouts where PCB area permits larger footprint and higher current demand exists. | Select when thermal margin is critical and board space allows 2×2mm footprint; not drop-in compatible with SOT563 land pattern. |
| NTJD4152PZ-1G | Lower VDSS (30V); higher RDS(ON) (3.5Ω @ 4.5V); no AEC-Q101 qualification; Ciss = 50pF. | Limited to non-safety-critical 3.3V/5V consumer or industrial applications; unsuitable for 12V automotive transients. | Consider only for cost-sensitive non-automotive designs where 30V rating and absence of PPAP support are acceptable. |
Compared with DMN63D1LVQ-7, DMN63D1LDWQ-7 offers superior thermal capability but requires PCB redesign, while NTJD4152PZ-1G sacrifices automotive qualification and voltage margin for lower unit cost in non-automotive contexts.
Availability
DMN63D1LVQ-7 is available at Aetrix Electronics and suitable for automotive instrument clusters, HVAC actuator control, and BCM load switching requiring stable component supply, AEC-Q101 compliance, and traceable sourcing.
Supply support for DMN63D1LVQ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.
The DMN63D1LVQ-7 belongs to Diodes' AEC-Q101-qualified automotive MOSFET product line, engineered specifically for space-constrained, thermally demanding functions in 12V vehicle subsystems.
FAQ
Is DMN63D1LVQ-7 qualified for automotive use?
Yes, DMN63D1LVQ-7 is fully AEC-Q101 qualified and PPAP-capable. It undergoes stress testing including high-temperature gate bias, high-temperature reverse bias, and temperature cycling per automotive reliability standards. Manufacturing occurs in IATF 16949-certified facilities, and qualification documentation is available upon request.
What is the maximum safe operating temperature for DMN63D1LVQ-7?
The absolute maximum junction temperature is +150°C, with storage temperature ranging from –55°C to +150°C. Under continuous operation with 1-inch² copper pad, it sustains 940mW power dissipation before reaching thermal limit at +25°C ambient. Derating is required above +25°C ambient per RθJA = 133°C/W.
Can DMN63D1LVQ-7 be used in a half-bridge configuration?
Yes-its dual independent N-channel structure supports half-bridge implementation when paired with external high-side drivers or bootstrap circuitry. Each channel has isolated source terminals (S1, S2), enabling separate reference points. However, it does not integrate level-shifting or gate-drive logic; external timing control is required.
Does DMN63D1LVQ-7 include integrated body diodes?
Yes, each channel includes an inherent parasitic body diode (anode at source, cathode at drain). The diode forward voltage is 0.8–1.2V at 115mA, confirmed by Figure 9 in the datasheet. These diodes support freewheeling in inductive loads like motors and solenoids, but are not optimized for high-frequency synchronous rectification.
DMN63D1LVQ-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 477mA (Ta)
- Rds On (Max) @ Id, Vgs:
- 2Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 1.04nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 41pF @ 30V
- Power - Max:
- 450mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-563
DMN63D1LVQ-7 FAQ
1.How can I place an order for DMN63D1LVQ-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN63D1LVQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN63D1LVQ-7 reliable?
The price and inventory of DMN63D1LVQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN63D1LVQ-7 is usually 5 days.
3.What payment methods are accepted for DMN63D1LVQ-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN63D1LVQ-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN63D1LVQ-7?
DMN63D1LVQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN63D1LVQ-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN63D1LVQ-7?
For technical support, including DMN63D1LVQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN63D1LVQ-7 requirements.
6.How does Aetrix verify that DMN63D1LVQ-7 is sourced from the original manufacturer or authorized distributors?
All DMN63D1LVQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN63D1LVQ-7 meets industry standards.
7.What is the process for return or replacement of DMN63D1LVQ-7?
All DMN63D1LVQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN63D1LVQ-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN63D1LVQ-7 part is unused and in its original packaging.
Return procedure for DMN63D1LVQ-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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