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Diodes Incorporated DMN63D1LW-7
- Part No.:
- DMN63D1LW-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- SC-70, SOT-323
- Datasheet:
-
DMN63D1LW-7.pdf
- Description:
- MOSFET N-CH 60V 380MA SOT323
- Quantity:
- Payment:
- Shipping:
Inventory:2,706
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Product details
Overview
DMN63D1LW-7 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in SOT323 package, rated for 60V V(BR)DSS, 2Ω RDS(ON) @ VGS = 10V, and 380mA continuous drain current at +25°C. It features ESD-protected gate, low input capacitance (30pF Ciss), and fast switching (tD(ON) = 3.9ns), targeting compact power management in space-constrained motor control and LED backlighting circuits.
For engineers reviewing the DMN63D1LW-7 datasheet, DMN63D1LW-7 pinout, DMN63D1LW-7 application, or DMN63D1LW-7 equivalent, key selection criteria include its 60V breakdown voltage, temperature-stable RDS(ON) up to +150°C, AEC-Q101 qualification, SOT323 thermal resistance (RθJA = 411°C/W), and gate threshold of 1.0–2.5V - critical for low-voltage logic-level drive compatibility.
Technical Context
This MOSFET employs planar silicon process technology optimized for low RDS(ON) while preserving fast turn-on/turn-off dynamics. Its 30pF input capacitance and 2.9pF reverse transfer capacitance support high-frequency PWM operation up to several hundred kHz in DC-DC and load-switching topologies.
The device integrates a monolithic gate protection diode and is characterized with guaranteed dynamic parameters including Qg = 304pC and Qgs/Qgd ratio of ~2.4, enabling predictable gate drive sizing. Thermal performance is validated on FR-4 PCB with 2oz copper, delivering 410mW pulsed power dissipation under transient conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 60V - Withstands up to 60V drain-source blocking voltage before avalanche conduction begins. |
| RDS(ON) | 2.0Ω @ VGS = 10V, ID = 0.5A - Enables <100mW conduction loss at 300mA, suitable for low-power switching. |
| ID (continuous) | 380mA @ TA = +25°C - Maximum steady-state drain current without exceeding thermal limits on standard PCB layout. |
| Ciss | 30pF @ VDS = 25V - Low input capacitance reduces gate drive power and improves switching speed in battery-powered systems. |
| tD(ON) | 3.9ns @ VDD = 30V, RG = 25Ω - Short turn-on delay supports >1MHz PWM frequency in compact DC-DC converters. |
| VGS(TH) | 1.0–2.5V @ ID = 1mA - Logic-level compatible with 1.8V/3.3V microcontrollers for direct GPIO drive without level-shifting. |
| RθJA | 411°C/W (steady-state) - Junction-to-ambient thermal resistance defines maximum power handling on minimal pad layout. |
Pinout & Package
Package: SOT323 - ultra-small surface-mount plastic package (2.15mm × 2.10mm × 0.95mm), moisture sensitivity level 1, matte tin-plated terminals, 0.006g weight.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Gate (G) | Control electrode | Accepts logic-level voltage (1.0–2.5V threshold); protected by integrated Zener diode against ±20V transients. |
| Drain (D) | High-side switch node | Connected to load supply rail; rated for 60V blocking and 1.2A pulsed current (IDM). |
| Source (S) | Reference return path | Tied to ground or low-side return; forms body diode cathode (VSD = 0.75–1.1V) for freewheeling. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 5V drive | 3.0Ω @ VGS = 5V - Ensures reliable on-state performance with 3.3V MCU outputs without gate boosting. |
| ESD-protected gate | Integrated Zener clamp - Eliminates need for external gate protection in handheld and automotive modules. |
| AEC-Q101 qualified | Stress-tested for automotive-grade reliability - Validated for operation from −55°C to +150°C junction temperature. |
| Green packaging | Halogen- and antimony-free, RoHS-compliant molding compound - Meets IEC 61249-2-21 and JEDEC J-STD-020 standards. |
| Low leakage | IDSS ≤ 1.0µA @ VDS = 60V - Minimizes standby power loss in always-on sensor or timer circuits. |
Applications
| Motor Control | LED Backlighting |
|---|---|
|
Use Scenario: Driving small DC brush motors (<5W) in portable medical pumps and precision lab instruments. IC Role / Device Role / Timing Role: Low-side load switch controlling motor direction and enable via PWM duty cycle. Use Value: 380mA rating and 2Ω RDS(ON) limit I²R heating to <300mW, enabling thermally stable operation in sealed enclosures. |
Use Scenario: Current regulation for white LED strings in industrial HMI displays and automotive interior lighting. IC Role / Device Role / Timing Role: Constant-current sink switch synchronized to PWM dimming signals up to 20kHz. Use Value: Fast 3.9ns turn-on delay ensures precise dimming linearity and eliminates visible flicker at low brightness levels. |
| Power Management | Load Switching |
|
Use Scenario: Enable/disable auxiliary rails (e.g., USB peripheral power, sensor bias) in battery-powered IoT nodes. IC Role / Device Role / Timing Role: High-side or low-side power path switch controlled by system MCU GPIO. Use Value: 1.0–2.5V VGS(TH) allows direct 1.8V/3.3V logic control; <1µA IDSS prevents battery drain during sleep mode. |
Use Scenario: Hot-swap protection and inrush limiting for FPGA I/O banks and memory subsystems. IC Role / Device Role / Timing Role: Controlled power ramp-up switch with gate slew-rate management via external resistor. Use Value: 304pC total gate charge enables predictable RC-controlled turn-on timing, reducing peak inrush current by >60%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN63D1LW-7 | 60V, 380mA, SOT323, RDS(ON) = 2.0Ω @ 10V | Optimized for ultra-low footprint and AEC-Q101 compliance | Preferred for space-constrained automotive and medical designs requiring qualification. |
| NX1020NAK,115 (Nexperia) | 60V, 420mA, SOT323, RDS(ON) = 1.8Ω @ 10V, no AEC-Q101 | Higher current rating but unqualified for automotive use | Select when higher ID margin is needed and qualification is not required. |
Compared with NX1020NAK,115, DMN63D1LW-7 trades 0.2Ω higher RDS(ON) for AEC-Q101 qualification and tighter VGS(TH) distribution (1.0–2.5V vs. 1.0–3.0V), making it more robust in temperature-varying automotive environments despite slightly lower current rating.
Availability
DMN63D1LW-7 is available at Aetrix Electronics and suitable for motor control, LED backlighting, and power management applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for medical and industrial OEMs.
Supply support for DMN63D1LW-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and consumer markets since 1959.
The DMN63D1LW-7 belongs to Diodes' logic-level MOSFET product line, engineered specifically for compact, low-power switching in space- and thermal-constrained applications where AEC-Q101 reliability and SOT323 footprint are mandatory.
FAQ
Is DMN63D1LW-7 suitable for 3.3V GPIO drive without a gate driver?
Yes. With a gate threshold voltage range of 1.0–2.5V and guaranteed turn-on at VGS = 5V, the DMN63D1LW-7 fully enhances using standard 3.3V microcontroller outputs. Its 3.0Ω RDS(ON) @ VGS = 5V ensures adequate conduction for ≤310mA loads without external level-shifting circuitry.
What is the maximum safe operating temperature for continuous use?
The DMN63D1LW-7 has a specified junction temperature range of −55°C to +150°C and is qualified per AEC-Q101. For continuous operation at full 380mA ID, ambient temperature must be limited to ≤+70°C on a standard FR-4 board, based on its 411°C/W RθJA and 310mW PD rating.
Does the SOT323 package support automated optical inspection (AOI)?
Yes. The SOT323 package features coplanar, matte tin-plated leads with defined dimensional tolerances (e.g., lead width b = 0.25–0.40mm), enabling reliable AOI detection during SMT assembly. Its standardized footprint aligns with IPC-7351B Class B density guidelines.
Can DMN63D1LW-7 replace older SOT23-3 MOSFETs in existing designs?
No direct drop-in replacement: SOT323 has smaller pad pitch (0.65mm vs. 0.95mm) and different thermal pad layout than SOT23-3. Layout revision is required. However, electrical specs (60V, 380mA, logic-level gate) make it a functional upgrade where board area reduction is prioritized over footprint compatibility.
DMN63D1LW-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 380mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.3 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 30 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 310mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-323
DMN63D1LW-7 FAQ
1.How can I place an order for DMN63D1LW-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN63D1LW-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN63D1LW-7 reliable?
The price and inventory of DMN63D1LW-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN63D1LW-7 is usually 5 days.
3.What payment methods are accepted for DMN63D1LW-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN63D1LW-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN63D1LW-7?
DMN63D1LW-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN63D1LW-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN63D1LW-7?
For technical support, including DMN63D1LW-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN63D1LW-7 requirements.
6.How does Aetrix verify that DMN63D1LW-7 is sourced from the original manufacturer or authorized distributors?
All DMN63D1LW-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN63D1LW-7 meets industry standards.
7.What is the process for return or replacement of DMN63D1LW-7?
All DMN63D1LW-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN63D1LW-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN63D1LW-7 part is unused and in its original packaging.
Return procedure for DMN63D1LW-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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