My Inquiry
My Account
Diodes Incorporated DMN63D8LDW-13
- Part No.:
- DMN63D8LDW-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
DMN63D8LDW-13.pdf
- Description:
- MOSFET 2N-CH 30V 0.22A SOT363
- Quantity:
- Payment:
- Shipping:
Inventory:6,077
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DMN63D8LDW-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT363 package, rated for 30V VDSS, 2.8Ω RDS(ON) at VGS = 10V and 250mA, with ESD-protected gate and low input capacitance (22pF Ciss). It serves as a compact, high-efficiency power switch in space-constrained DC-DC converters and battery-operated systems.
For engineers reviewing the DMN63D8LDW-13 datasheet, DMN63D8LDW-13 pinout, DMN63D8LDW-13 application, or DMN63D8LDW-13 equivalent, key selection criteria include dual-channel integration in SOT363, guaranteed RDS(ON) ≤ 4.2Ω at 4.5V drive, fast switching (tF = 6.3ns), thermal resistance of 330°C/W on 2oz copper, and RoHS-compliant lead-free plating.
Technical Context
This dual MOSFET integrates two independent N-channel devices sharing a common source configuration per channel (Q1: D1/S1/G1; Q2: D2/S2/G2), enabling synchronous rectification or complementary switching in compact DC-DC topologies. Its low gate charge (Qg = 0.43nC at 4.5V) and fast turn-off delay (tD(OFF) = 12.0ns) support high-frequency operation up to 1MHz.
The device features integrated gate protection diodes and is characterized across -55°C to +150°C junction temperature, with normalized RDS(ON) variation ≤1.6× over that range at VGS = 4.0V. Threshold voltage (VGS(TH) = 0.8–1.5V) ensures reliable turn-on with standard logic-level drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30V - Maximum drain-source blocking voltage for 24V rail switching |
| RDS(ON) | 2.8Ω @ VGS = 10V - Enables <100mW conduction loss at 250mA load |
| ID (continuous) | 260mA @ TA = 25°C - Sufficient for low-power load switching in portable devices |
| Ciss | 22pF - Minimizes gate drive power and enables fast edge rates |
| tF | 6.3ns - Supports efficient high-frequency PWM control in buck regulators |
| TJ range | -55°C to +150°C - Qualified for industrial and extended-temperature embedded use |
| PD | 400mW - Achievable with 2oz copper pad, limiting thermal derating in dense layouts |
Pinout & Package
Package: SOT363 - 6-pin surface-mount plastic package (2.0 × 2.225 mm footprint), UL 94V-0 rated, moisture sensitivity level 1, matte tin-plated alloy 42 leadframe.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S1) | Source of Q1 | Common return path for first MOSFET; internally connected to Pin 4 in typical layout |
| 2 (G1) | Gate of Q1 | Control terminal for Q1; ESD-protected, requires ≤±20V drive |
| 3 (D1) | Drain of Q1 | High-side or low-side switching node for first channel |
| 4 (S2) | Source of Q2 | Source of second MOSFET; electrically isolated from S1 unless externally tied |
| 5 (G2) | Gate of Q2 | Independent control input for second channel; no internal coupling to G1 |
| 6 (D2) | Drain of Q2 | Second independent switching node; supports dual-load or phase-split operation |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent N-channel topology | Enables two separate low-voltage switching functions in one 2.2mm² footprint, reducing PCB area vs. discrete singles |
| Low RDS(ON) at 4.5V | 4.2Ω max ensures full enhancement with 3.3V/5V microcontroller GPIO without level-shifting |
| ESD-protected gate | Withstands ≥2kV HBM, eliminating need for external gate protection in handling-sensitive designs |
| Low Ciss and Qg | 22pF Ciss and 0.43nC Qg at 4.5V reduce driver stress and switching losses in 500kHz–1MHz converters |
| Green, lead-free construction | Halogen- and antimony-free (<900ppm Br/Cl, <1000ppm Sb), compliant with RoHS 3 and automotive change-control requirements |
Applications
| Battery-Powered Load Switching | Low-Voltage DC-DC Converter |
|---|---|
Use Scenario: Power gating of sensors, BLE modules, or display backlights in wearables and IoT nodes. IC Role / Device Role: Dual-channel load switch controlling independent 3.3V/5V subsystems. Use Value: 2.8Ω RDS(ON) limits dropout to <0.7V at 250mA, preserving battery runtime; SOT363 saves >60% board area vs. two SOT23s. | Use Scenario: Synchronous rectification in 3.3V-output buck converter powered from single-cell Li-ion. IC Role / Device Role: Low-side switch paired with external high-side FET or controller. Use Value: 6.3ns fall time and 12ns turn-off delay enable >1MHz operation; 0.43nC Qg reduces gate driver losses by ~40% vs. comparable 6-pin MOSFETs. |
| Solid-State Relay Replacement | Peripheral Driver Interface |
Use Scenario: Replacing electromechanical relays in PLC I/O modules and smart home controllers. IC Role / Device Role: Dual-channel isolated switching element driving resistive/inductive loads (e.g., solenoids, lamps). Use Value: 30V VDSS and 800mA pulsed rating handle 24VAC/DC loads; integrated gate protection eliminates external TVS diodes. | Use Scenario: Driving LED segments, small DC motors, or memory enable lines in embedded instrumentation. IC Role / Device Role: General-purpose logic-level buffer and current amplifier. Use Value: 0.8–1.5V VGS(TH) ensures compatibility with 1.8V/3.3V FPGA I/O; 220mA continuous rating supports multiple parallel LEDs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN63D8LW-7 | Same die, identical specs, but packaged in 3000-unit tape-and-reel (vs. 10000 for -13); no electrical or thermal difference | No functional difference; only packaging quantity and part number suffix vary | Select -7 for prototyping or low-volume builds where smaller reels reduce inventory overhead |
| NTZD3154PT1G | Higher RDS(ON) (5.5Ω @ 4.5V), lower ID (180mA), same SOT363 package and dual-N structure | Less suitable for high-efficiency 250mA+ loads; higher conduction loss increases thermal stress in compact layouts | Choose only if cost sensitivity outweighs efficiency needs and thermal margin is verified at full load |
Compared with DMN63D8LDW-13, the -7 variant offers identical performance in smaller reels for flexibility, while NTZD3154PT1G trades efficiency for cost in lower-current roles-neither is pin-compatible with different gate threshold or thermal profiles.
Availability
DMN63D8LDW-13 is available at Aetrix Electronics and suitable for battery-powered load switching, low-voltage DC-DC converters, and solid-state relay replacement requiring stable component supply and long-term industrial availability.
Supply support for DMN63D8LDW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.
The DMN63D8LDW belongs to Diodes' low-voltage logic-level MOSFET product line, engineered specifically for space-constrained, energy-efficient switching in portable and always-on embedded systems.
FAQ
What is the maximum continuous drain current for DMN63D8LDW-13 at 70°C ambient?
At TA = +70°C, the continuous drain current is 210mA per channel when mounted on a 2oz copper FR-4 board with a 1-inch square pad layout. This derating reflects thermal resistance of 330°C/W and ensures junction temperature remains within -55°C to +150°C limits under steady-state conditions.
Does DMN63D8LDW-13 require external gate resistors for typical 3.3V MCU drive?
No external gate resistor is required for basic switching with 3.3V microcontrollers, as the device's low gate charge (0.43nC at 4.5V) and ESD-protected gate tolerate direct GPIO connection. However, a 10–47Ω series resistor is recommended to damp ringing in high-speed (>500kHz) or noisy environments.
Can both channels be used in parallel to increase current capacity?
No-parallel operation is not recommended. The two channels have independent dies with mismatched RDS(ON) and thermal coupling characteristics; uneven current sharing may cause thermal runaway. For higher current, select a single-channel MOSFET with appropriate rating and thermal design.
Is DMN63D8LDW-13 qualified for automotive applications?
DMN63D8LDW-13 itself is not AEC-Q101 qualified. Diodes offers automotive-grade variants (e.g., DMN63D8LQW) with PPAP documentation, IATF 16949 manufacturing, and AEC-Q101 stress testing. For automotive use, contact Diodes directly to obtain the qualified version and supporting certification data.
DMN63D8LDW-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 220mA
- Rds On (Max) @ Id, Vgs:
- 2.8Ohm @ 250mA, 10V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.87nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 22pF @ 25V
- Power - Max:
- 300mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-363
DMN63D8LDW-13 FAQ
1.How can I place an order for DMN63D8LDW-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN63D8LDW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN63D8LDW-13 reliable?
The price and inventory of DMN63D8LDW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN63D8LDW-13 is usually 5 days.
3.What payment methods are accepted for DMN63D8LDW-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN63D8LDW-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN63D8LDW-13?
DMN63D8LDW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN63D8LDW-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN63D8LDW-13?
For technical support, including DMN63D8LDW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN63D8LDW-13 requirements.
6.How does Aetrix verify that DMN63D8LDW-13 is sourced from the original manufacturer or authorized distributors?
All DMN63D8LDW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN63D8LDW-13 meets industry standards.
7.What is the process for return or replacement of DMN63D8LDW-13?
All DMN63D8LDW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN63D8LDW-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN63D8LDW-13 part is unused and in its original packaging.
Return procedure for DMN63D8LDW-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMN63D8LDW-13 Tags
-
SSM6N7002KFU,LF
Toshiba Semiconductor and Storage
-
2N7002DW-7-F
Diodes Incorporated
-
SSM6L56FE,LM
Toshiba Semiconductor and Storage
-
SSM6N37FU,LF
Toshiba Semiconductor and Storage
-
2N7002DWH6327XTSA1
Infineon Technologies
-
2N7002BKS,115
Nexperia USA Inc.
-
DMG1016UDW-7
Diodes Incorporated
-
UM6K33NTN
Rohm Semiconductor
-
DMG6602SVT-7
Diodes Incorporated
-
EM6K34T2CR
Rohm Semiconductor
-
UM6K34NTCN
Rohm Semiconductor
-
DMG6601LVT-7
Diodes Incorporated
Tech Hub
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
