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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Diodes Incorporated DMN63D8LDW-7

Name: DMN63D8LDW-7
Brand: Diodes Incorporated
SKU: DMN63D8LDW-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN63D8LDW-7

Manufacturer:: Diodes Incorporated

Category:: FET, MOSFET Arrays

Package:: 6-TSSOP, SC-88, SOT-363

Datasheet:: DMN63D8LDW-7.pdf

Description:: MOSFET 2N-CH 30V 0.22A SOT363

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Product details

Overview

DMN63D8LDW-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT363 package, rated for 30V V_DSS, 2.8Ω R_DS(ON) at V_GS = 10V and 250mA, with ESD-protected gate and 400mW power dissipation at +70°C. It serves as a compact, low-loss switching element in space-constrained DC-DC converters and battery-powered load drivers.

For engineers reviewing the DMN63D8LDW-7 datasheet, DMN63D8LDW-7 pinout, DMN63D8LDW-7 application, or DMN63D8LDW-7 equivalent, key selection criteria include dual-channel integration in 6-pin SOT363, gate threshold of 0.8–1.5V, low input capacitance (22pF C_iss), fast switching (3.3ns t_D(ON)), and thermal resistance of 330°C/W under optimized PCB layout.

Technical Context

This dual MOSFET integrates two independent N-channel devices sharing a common source configuration per channel (Q1: D1/S1/G1; Q2: D2/S2/G2), enabling synchronous or independent low-side switching. Its low R_DS(ON) at 4.5V (4.2Ω) supports efficient operation from single-cell Li-ion or 5V logic rails.

The device features integrated gate protection diodes, 20V V_GSS rating, and guaranteed dynamic parameters including 0.43nC total gate charge at 4.5V - critical for minimizing drive loss in high-frequency PWM control.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30V - maximum drain-source blocking voltage for use in ≤24V systems with margin
R_DS(ON) @ V_GS = 10V	2.8Ω - enables ≤260mA continuous current with <0.2W conduction loss at full load
R_DS(ON) @ V_GS = 4.5V	4.2Ω - ensures reliable turn-on from standard 3.3V/5V GPIO or controller outputs
C_iss	22pF - reduces gate drive power and improves switching efficiency above 1MHz
t_D(ON)	3.3ns - supports high-frequency DC-DC operation up to ~30MHz effective switching
P_D @ T_A = +70°C	400mW - achievable with 2oz copper pad, enabling compact thermal design without heatsink
V_GS(TH)	0.8–1.5V - ensures strong enhancement-mode behavior with low-voltage logic compatibility

Pinout & Package

Package: SOT363 - 6-pin surface-mount plastic package (2.0 × 2.225 × 0.9mm), UL 94V-0 rated, moisture sensitivity level 1, lead-free matte tin plating.

Pin/Terminal	Circuit Role	Design Meaning
1 (G1)	Gate of Channel 1	Control terminal for first N-MOSFET; accepts 0–20V logic; ESD-protected
2 (S1)	Source of Channel 1	Reference node for Q1; internally connected to Pin 3 (S2) in common-source dual configuration
3 (S2)	Source of Channel 2	Shared source node with Pin 2; enables dual low-side switch with common return path
4 (G2)	Gate of Channel 2	Independent control terminal for second N-MOSFET; identical drive requirements to G1
5 (D2)	Drain of Channel 2	High-current output node for Q2; rated for 30V, 260mA continuous
6 (D1)	Drain of Channel 1	High-current output node for Q1; electrically isolated from D2; supports independent loads

Key Features

Feature	Design Value
Dual N-channel topology	Two fully isolated enhancement-mode MOSFETs in one SOT363 footprint - saves board area vs. discrete pairs
Low R_DS(ON) at 4.5V	4.2Ω - delivers >85% efficiency in 3.3V-driven load switches with 200mA load
ESD-protected gate	±10μA I_GSS max at ±20V - withstands HBM >2kV without external protection circuitry
Fast switching speed	3.3ns t_D(ON), 6.3ns t_F - minimizes transition losses in 500kHz–2MHz DC-DC converters
Green, RoHS-compliant construction	Halogen- and antimony-free (<900ppm Br/Cl, <1000ppm Sb) - meets automotive and industrial environmental mandates

Applications

DC-DC Converter Switching Stage

Battery-Powered Load Control

Use Scenario: Used as synchronous rectifier or high-side switch in compact buck converters powering microcontrollers or sensors.

IC Role / Device Role / Timing Role: Dual-channel N-MOSFET provides low-loss current path during on-phase; gate timing synchronized to controller PWM.

Use Value: 2.8Ω R_DS(ON) at 10V reduces conduction loss by 35% vs. comparable 4.5Ω parts, extending battery life in portable medical devices.

Use Scenario: Drives solenoids, relays, and LED arrays in handheld test equipment with 3.3V/5V logic supply.

IC Role / Device Role / Timing Role: Low-threshold (0.8–1.5V) dual switch enables direct GPIO control without level-shifting.

Use Value: Integrated ESD protection eliminates need for external TVS diodes, reducing BOM count and PCB area by 15%.

Solid-State Relay Replacement

Display Backlight Driver

Use Scenario: Replaces electromechanical relays in industrial I/O modules requiring silent, bounce-free switching.

IC Role / Device Role / Timing Role: Acts as isolated load switch with fast turn-off (12ns t_D(OFF)) to prevent contact arcing artifacts.

Use Value: 800mA pulsed current rating supports inrush-limited 24V solenoid actuation without derating.

Use Scenario: Controls current to white LED strings in smart home displays powered from single-cell Li-ion.

IC Role / Device Role / Timing Role: Dual channel drives separate LED banks for dimming zones; matched R_DS(ON) ensures uniform brightness.

Use Value: 4.2Ω R_DS(ON) at 4.5V allows full 200mA per channel from 4.2V battery, maintaining >92% luminous efficacy.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN63D8LW-7	Single-channel version in same SOT363 package; identical R_DS(ON) and V_DSS, but half the functionality	Used when only one switch is needed; avoids unused channel leakage and gate drive overhead	Select when board space allows separate placement and channel independence is not required
NTJD4152PZ	Higher R_DS(ON) (5.5Ω @ 4.5V); lower V_DSS (20V); same SOT-363 footprint and pinout	Limited to ≤12V systems; less efficient at 3.3V drive; suitable for cost-sensitive consumer IoT	Choose only if 20V rating suffices and thermal budget permits higher conduction loss

Compared with DMN63D8LDW-7, DMN63D8LW-7 offers functional simplification without performance trade-offs, while NTJD4152PZ sacrifices on-resistance and voltage rating for lower unit cost - making the DMN63D8LDW-7 optimal for dual-switch efficiency-critical 24V-compatible designs.

Availability

DMN63D8LDW-7 is available at Aetrix Electronics and suitable for DC-DC converters, battery-operated load drivers, and solid-state relay replacements requiring stable component supply and consistent SOT363 assembly compatibility.

Supply support for DMN63D8LDW-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and the Americas.

The DMN63D8LDW-7 belongs to Diodes' PowerMOS™ family, engineered specifically for high-efficiency, low-voltage switching in portable and space-constrained power management systems.

FAQ

What is the maximum continuous drain current per channel at +70°C ambient?

The DMN63D8LDW-7 supports 210mA continuous drain current per channel at T_A = +70°C with V_GS = 10V, based on thermal derating from its 400mW power dissipation limit and 330°C/W junction-to-ambient resistance under 2oz copper pad layout.

Is the SOT363 package lead-free and RoHS compliant?

Yes - the DMN63D8LDW-7 uses matte tin finish over alloy 42 leadframe, is totally lead-free, and fully complies with EU RoHS directives 2002/95/EC, 2011/65/EU, and 2015/863/EU, with halogen and antimony content below regulated thresholds.

Can both channels be driven independently with different gate signals?

Yes - Channels 1 (G1/D1/S1) and 2 (G2/D2/S2) are electrically isolated except for the shared source connection (Pins 2 and 3). Independent gate drive is fully supported, enabling asynchronous or phase-shifted switching configurations.

What is the typical gate charge required to switch both channels at 10V?

Each channel requires 0.87nC total gate charge at V_GS = 10V (Q_g), so driving both channels simultaneously demands 1.74nC total. This value is measured at V_DS = 30V and I_D = 150mA, and directly determines driver strength requirements for <100ns rise/fall times.

DMN63D8LDW-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 6-TSSOP, SC-88, SOT-363

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 N-Channel (Dual)

FET Feature:: Logic Level Gate

Drain to Source Voltage (Vdss):: 30V

Current - Continuous Drain (Id) @ 25°C:: 220mA

Rds On (Max) @ Id, Vgs:: 2.8Ohm @ 250mA, 10V

Vgs(th) (Max) @ Id:: 1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 0.87nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:: 22pF @ 25V

Power - Max:: 300mW

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-363

DMN63D8LDW-7 FAQ

1.How can I place an order for DMN63D8LDW-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN63D8LDW-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN63D8LDW-7 reliable?

The price and inventory of DMN63D8LDW-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN63D8LDW-7 is usually 5 days.

3.What payment methods are accepted for DMN63D8LDW-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN63D8LDW-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN63D8LDW-7?

DMN63D8LDW-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN63D8LDW-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN63D8LDW-7?

For technical support, including DMN63D8LDW-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN63D8LDW-7 requirements.

6.How does Aetrix verify that DMN63D8LDW-7 is sourced from the original manufacturer or authorized distributors?

All DMN63D8LDW-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN63D8LDW-7 meets industry standards.

7.What is the process for return or replacement of DMN63D8LDW-7?

All DMN63D8LDW-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN63D8LDW-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN63D8LDW-7 part is unused and in its original packaging.

Return procedure for DMN63D8LDW-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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