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Diodes Incorporated DMN63D8LDWQ-7

Part No.:
DMN63D8LDWQ-7
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
6-TSSOP, SC-88, SOT-363
Datasheet:
AetrixDMN63D8LDWQ-7.pdf
Description:
MOSFET 2N-CH 30V 0.22A SOT363
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,003

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Product details

Overview

DMN63D8LDWQ-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT363 package, rated for 30V VDS, 2.8Ω RDS(on) at VGS = 10V, and 260mA continuous drain current at TA = +25°C. It features ESD-protected gate, AEC-Q101 qualification, and low input capacitance (Ciss = 22pF), targeting compact, high-efficiency power switching in space-constrained automotive and portable systems.

For engineers reviewing the DMN63D8LDWQ-7 datasheet, DMN63D8LDWQ-7 pinout, DMN63D8LDWQ-7 application, or DMN63D8LDWQ-7 equivalent, key selection criteria include dual-channel RDS(on) matching at low gate drive (4.5V), thermal resistance (RθJA = 330°C/W on 2oz copper), and AEC-Q101 compliance for automotive-grade reliability.

Technical Context

This dual MOSFET integrates two matched N-channel devices in a single SOT363 package with independent gate, source, and drain terminals per channel. Its design emphasizes low on-resistance at logic-level gate drive (4.5V) while maintaining fast switching (tD(on) = 3.3ns, tD(off) = 12.0ns) and low gate charge (Qg = 0.43nC at VGS = 4.5V).

The device uses a planar trench process to achieve RDS(on) of 4.2Ω at VGS = 4.5V and 2.8Ω at VGS = 10V, with integrated body diode (VSD = 0.8–1.2V at IS = 115mA). Thermal performance is specified for both FR-4 (RθJA = 435°C/W) and enhanced 2oz copper layouts (RθJA = 330°C/W).

Key Specifications

ParameterValue and Actual Design Meaning
VDS30V - Maximum drain-source blocking voltage for 12V/24V automotive and battery-powered systems
RDS(on)2.8Ω @ VGS = 10V - Enables <100mW conduction loss at 260mA, critical for thermally constrained PCBs
ID (cont)260mA @ TA = +25°C - Sustained current capability with 2oz copper pad layout
Ciss22pF - Low input capacitance reduces gate drive power and improves switching efficiency
Qg0.43nC @ VGS = 4.5V - Supports fast turn-on with minimal gate driver current demand
tD(off)12.0ns - Short turn-off delay enables high-frequency PWM control up to ~10MHz
RθJA330°C/W - Junction-to-ambient thermal resistance on optimized 2oz copper, enabling 300mW operation

Pinout & Package

Package: SOT363 - 6-pin surface-mount plastic package (2.10 × 1.30 × 0.95 mm), UL 94V-0 rated, moisture sensitivity level 1, matte tin-plated Alloy 42 leadframe.

Pin/TerminalCircuit RoleDesign Meaning
1 (S1)Source of Channel 1Common return path for first MOSFET; internally connected to pin 4 in some variants but isolated here
2 (G1)Gate of Channel 1Control terminal for first MOSFET; ESD-protected, threshold 0.8–1.5V
3 (D1)Drain of Channel 1High-side or low-side switching node; rated for 30V, 260mA
4 (S2)Source of Channel 2Independent return path for second MOSFET; electrically isolated from S1
5 (G2)Gate of Channel 2Independent control terminal; matched threshold and transconductance to G1
6 (D2)Drain of Channel 2Second switching node; identical voltage/current ratings to D1

Key Features

FeatureDesign Value
Dual N-channel topologyTwo independent, matched MOSFETs in one SOT363 footprint-reduces board area by ~40% vs. discrete singles
Low RDS(on) at 4.5V4.2Ω - Enables direct drive from 3.3V/5V microcontrollers without level-shifting
AEC-Q101 qualificationQualified for automotive applications including engine control modules and body electronics
ESD-protected gateHBM >2kV - Eliminates need for external gate protection in production assembly
Green, RoHS-compliant constructionHalogen- and antimony-free (<900ppm Br/Cl, <1000ppm Sb); lead-free plating per MIL-STD-202

Applications

DC-DC Converter Switching StageBattery Protection Circuit

Use Scenario: High-frequency synchronous buck converter in automotive infotainment power rail (5V → 3.3V).

IC Role / Device Role / Timing Role: Low-side switch in dual-phase configuration, operating at 2MHz with 4.5V gate drive from controller IC.

Use Value: 4.2Ω RDS(on) at 4.5V minimizes conduction loss; 22pF Ciss ensures low gate drive power at 2MHz.

Use Scenario: Overcurrent and short-circuit protection for 12V Li-ion battery pack in portable medical device.

IC Role / Device Role / Timing Role: Dual-channel load switch controlling charging path and system power path independently.

Use Value: Matched RDS(on) ensures balanced current sharing; AEC-Q101 rating guarantees reliability under thermal cycling.

Solid-State Relay DriverLED Backlight Dimming Control

Use Scenario: Replacement for electromechanical relay in HVAC control module, driving 24V solenoid valves.

IC Role / Device Role / Timing Role: High-side switch with internal gate pull-down; driven by 3.3V GPIO with 10kΩ series resistor.

Use Value: 0.8–1.5V VGS(th) ensures turn-on at 3.3V; 800mA pulsed rating handles solenoid inrush.

Use Scenario: PWM dimming control for white LED strings in automotive instrument cluster display.

IC Role / Device Role / Timing Role: Low-side current sink switching at 1kHz–10kHz, handling 200mA per string.

Use Value: Fast 12ns turn-off delay prevents LED ghosting; 300mW power dissipation supports continuous 200mA operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN63D8LWQ-7Single-channel version; same RDS(on), VDS, and package but only one MOSFETUsed where channel independence is unnecessary or board space allows separate placementSelect when dual functionality is not required and routing flexibility outweighs component count reduction
DMN3029LSD-13Lower RDS(on) (2.2Ω @ 4.5V), higher ID (400mA), same SOT363 package, but not AEC-Q101 qualifiedPreferred for industrial DC-DC converters where automotive qualification is not mandatedChoose for higher current or lower loss where automotive reliability certification is optional

Compared with DMN63D8LDWQ-7, DMN63D8LWQ-7 reduces integration density but simplifies layout for single-switch needs, while DMN3029LSD-13 trades AEC-Q101 compliance for improved conduction efficiency in non-automotive designs.

Availability

DMN63D8LDWQ-7 is available at Aetrix Electronics and suitable for automotive body electronics, portable medical instrumentation, and industrial DC-DC converters requiring stable component supply and AEC-Q101-compliant discrete power switches.

Supply support for DMN63D8LDWQ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This device belongs to Diodes' Automotive-Grade Power MOSFET product line, engineered specifically for reliable, low-loss switching in 12V/24V vehicle subsystems and portable equipment with stringent thermal and qualification requirements.

FAQ

What is the maximum junction temperature for continuous operation?

The DMN63D8LDWQ-7 has an operating junction temperature range of –55°C to +150°C. For continuous DC operation at full rated current (260mA), thermal design must ensure junction temperature remains ≤150°C using the specified RθJA = 330°C/W on 2oz copper. Derating is required above +70°C ambient.

Is the body diode suitable for reverse polarity protection?

Yes-the integrated body diode has VSD = 0.8–1.2V at 115mA and is rated for continuous forward conduction. It supports reverse-polarity protection in low-current (<200mA) battery-input circuits, but external Schottky diodes are recommended for higher current or lower forward drop requirements.

How does the dual-channel matching affect parallel operation?

The two channels are monolithically integrated and exhibit tightly matched RDS(on), VGS(th), and gFS across temperature. This enables true current sharing without external balancing resistors in dual-load or redundant-switch configurations, verified per AEC-Q101 transient testing.

Can this MOSFET be used in linear (analog) regulation mode?

No-it is optimized for switching operation only. The Safe Operating Area (SOA) is not characterized for linear mode, and prolonged operation in the ohmic region risks thermal runaway due to positive temperature coefficient of RDS(on) and limited power dissipation (300mW).

DMN63D8LDWQ-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
6-TSSOP, SC-88, SOT-363
Packaging:
Tape & Reel (TR)
Product Status:
Not For New Designs
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
-
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
220mA
Rds On (Max) @ Id, Vgs:
2.8Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
0.87nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
22pF @ 25V
Power - Max:
300mW
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-363

DMN63D8LDWQ-7 FAQ

1.How can I place an order for DMN63D8LDWQ-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN63D8LDWQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN63D8LDWQ-7 reliable?

The price and inventory of DMN63D8LDWQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN63D8LDWQ-7 is usually 5 days.

3.What payment methods are accepted for DMN63D8LDWQ-7?

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DMN63D8LDWQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN63D8LDWQ-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN63D8LDWQ-7?

For technical support, including DMN63D8LDWQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN63D8LDWQ-7 requirements.

6.How does Aetrix verify that DMN63D8LDWQ-7 is sourced from the original manufacturer or authorized distributors?

All DMN63D8LDWQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN63D8LDWQ-7 meets industry standards.

7.What is the process for return or replacement of DMN63D8LDWQ-7?

All DMN63D8LDWQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN63D8LDWQ-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN63D8LDWQ-7 part is unused and in its original packaging.

Return procedure for DMN63D8LDWQ-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN63D8LDWQ-7 Tags

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