Diodes Incorporated DMN63D8LDWQ-7
- Part No.:
- DMN63D8LDWQ-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
DMN63D8LDWQ-7.pdf
- Description:
- MOSFET 2N-CH 30V 0.22A SOT363
- Quantity:
- Payment:

- Shipping:

Inventory:6,003
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DMN63D8LDWQ-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT363 package, rated for 30V VDS, 2.8Ω RDS(on) at VGS = 10V, and 260mA continuous drain current at TA = +25°C. It features ESD-protected gate, AEC-Q101 qualification, and low input capacitance (Ciss = 22pF), targeting compact, high-efficiency power switching in space-constrained automotive and portable systems.
For engineers reviewing the DMN63D8LDWQ-7 datasheet, DMN63D8LDWQ-7 pinout, DMN63D8LDWQ-7 application, or DMN63D8LDWQ-7 equivalent, key selection criteria include dual-channel RDS(on) matching at low gate drive (4.5V), thermal resistance (RθJA = 330°C/W on 2oz copper), and AEC-Q101 compliance for automotive-grade reliability.
Technical Context
This dual MOSFET integrates two matched N-channel devices in a single SOT363 package with independent gate, source, and drain terminals per channel. Its design emphasizes low on-resistance at logic-level gate drive (4.5V) while maintaining fast switching (tD(on) = 3.3ns, tD(off) = 12.0ns) and low gate charge (Qg = 0.43nC at VGS = 4.5V).
The device uses a planar trench process to achieve RDS(on) of 4.2Ω at VGS = 4.5V and 2.8Ω at VGS = 10V, with integrated body diode (VSD = 0.8–1.2V at IS = 115mA). Thermal performance is specified for both FR-4 (RθJA = 435°C/W) and enhanced 2oz copper layouts (RθJA = 330°C/W).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30V - Maximum drain-source blocking voltage for 12V/24V automotive and battery-powered systems |
| RDS(on) | 2.8Ω @ VGS = 10V - Enables <100mW conduction loss at 260mA, critical for thermally constrained PCBs |
| ID (cont) | 260mA @ TA = +25°C - Sustained current capability with 2oz copper pad layout |
| Ciss | 22pF - Low input capacitance reduces gate drive power and improves switching efficiency |
| Qg | 0.43nC @ VGS = 4.5V - Supports fast turn-on with minimal gate driver current demand |
| tD(off) | 12.0ns - Short turn-off delay enables high-frequency PWM control up to ~10MHz |
| RθJA | 330°C/W - Junction-to-ambient thermal resistance on optimized 2oz copper, enabling 300mW operation |
Pinout & Package
Package: SOT363 - 6-pin surface-mount plastic package (2.10 × 1.30 × 0.95 mm), UL 94V-0 rated, moisture sensitivity level 1, matte tin-plated Alloy 42 leadframe.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S1) | Source of Channel 1 | Common return path for first MOSFET; internally connected to pin 4 in some variants but isolated here |
| 2 (G1) | Gate of Channel 1 | Control terminal for first MOSFET; ESD-protected, threshold 0.8–1.5V |
| 3 (D1) | Drain of Channel 1 | High-side or low-side switching node; rated for 30V, 260mA |
| 4 (S2) | Source of Channel 2 | Independent return path for second MOSFET; electrically isolated from S1 |
| 5 (G2) | Gate of Channel 2 | Independent control terminal; matched threshold and transconductance to G1 |
| 6 (D2) | Drain of Channel 2 | Second switching node; identical voltage/current ratings to D1 |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel topology | Two independent, matched MOSFETs in one SOT363 footprint-reduces board area by ~40% vs. discrete singles |
| Low RDS(on) at 4.5V | 4.2Ω - Enables direct drive from 3.3V/5V microcontrollers without level-shifting |
| AEC-Q101 qualification | Qualified for automotive applications including engine control modules and body electronics |
| ESD-protected gate | HBM >2kV - Eliminates need for external gate protection in production assembly |
| Green, RoHS-compliant construction | Halogen- and antimony-free (<900ppm Br/Cl, <1000ppm Sb); lead-free plating per MIL-STD-202 |
Applications
| DC-DC Converter Switching Stage | Battery Protection Circuit |
|---|---|
Use Scenario: High-frequency synchronous buck converter in automotive infotainment power rail (5V → 3.3V). IC Role / Device Role / Timing Role: Low-side switch in dual-phase configuration, operating at 2MHz with 4.5V gate drive from controller IC. Use Value: 4.2Ω RDS(on) at 4.5V minimizes conduction loss; 22pF Ciss ensures low gate drive power at 2MHz. | Use Scenario: Overcurrent and short-circuit protection for 12V Li-ion battery pack in portable medical device. IC Role / Device Role / Timing Role: Dual-channel load switch controlling charging path and system power path independently. Use Value: Matched RDS(on) ensures balanced current sharing; AEC-Q101 rating guarantees reliability under thermal cycling. |
| Solid-State Relay Driver | LED Backlight Dimming Control |
Use Scenario: Replacement for electromechanical relay in HVAC control module, driving 24V solenoid valves. IC Role / Device Role / Timing Role: High-side switch with internal gate pull-down; driven by 3.3V GPIO with 10kΩ series resistor. Use Value: 0.8–1.5V VGS(th) ensures turn-on at 3.3V; 800mA pulsed rating handles solenoid inrush. | Use Scenario: PWM dimming control for white LED strings in automotive instrument cluster display. IC Role / Device Role / Timing Role: Low-side current sink switching at 1kHz–10kHz, handling 200mA per string. Use Value: Fast 12ns turn-off delay prevents LED ghosting; 300mW power dissipation supports continuous 200mA operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN63D8LWQ-7 | Single-channel version; same RDS(on), VDS, and package but only one MOSFET | Used where channel independence is unnecessary or board space allows separate placement | Select when dual functionality is not required and routing flexibility outweighs component count reduction |
| DMN3029LSD-13 | Lower RDS(on) (2.2Ω @ 4.5V), higher ID (400mA), same SOT363 package, but not AEC-Q101 qualified | Preferred for industrial DC-DC converters where automotive qualification is not mandated | Choose for higher current or lower loss where automotive reliability certification is optional |
Compared with DMN63D8LDWQ-7, DMN63D8LWQ-7 reduces integration density but simplifies layout for single-switch needs, while DMN3029LSD-13 trades AEC-Q101 compliance for improved conduction efficiency in non-automotive designs.
Availability
DMN63D8LDWQ-7 is available at Aetrix Electronics and suitable for automotive body electronics, portable medical instrumentation, and industrial DC-DC converters requiring stable component supply and AEC-Q101-compliant discrete power switches.
Supply support for DMN63D8LDWQ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
This device belongs to Diodes' Automotive-Grade Power MOSFET product line, engineered specifically for reliable, low-loss switching in 12V/24V vehicle subsystems and portable equipment with stringent thermal and qualification requirements.
FAQ
What is the maximum junction temperature for continuous operation?
The DMN63D8LDWQ-7 has an operating junction temperature range of –55°C to +150°C. For continuous DC operation at full rated current (260mA), thermal design must ensure junction temperature remains ≤150°C using the specified RθJA = 330°C/W on 2oz copper. Derating is required above +70°C ambient.
Is the body diode suitable for reverse polarity protection?
Yes-the integrated body diode has VSD = 0.8–1.2V at 115mA and is rated for continuous forward conduction. It supports reverse-polarity protection in low-current (<200mA) battery-input circuits, but external Schottky diodes are recommended for higher current or lower forward drop requirements.
How does the dual-channel matching affect parallel operation?
The two channels are monolithically integrated and exhibit tightly matched RDS(on), VGS(th), and gFS across temperature. This enables true current sharing without external balancing resistors in dual-load or redundant-switch configurations, verified per AEC-Q101 transient testing.
Can this MOSFET be used in linear (analog) regulation mode?
No-it is optimized for switching operation only. The Safe Operating Area (SOA) is not characterized for linear mode, and prolonged operation in the ohmic region risks thermal runaway due to positive temperature coefficient of RDS(on) and limited power dissipation (300mW).
DMN63D8LDWQ-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 220mA
- Rds On (Max) @ Id, Vgs:
- 2.8Ohm @ 250mA, 10V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.87nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 22pF @ 25V
- Power - Max:
- 300mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-363
DMN63D8LDWQ-7 FAQ
1.How can I place an order for DMN63D8LDWQ-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN63D8LDWQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN63D8LDWQ-7 reliable?
The price and inventory of DMN63D8LDWQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN63D8LDWQ-7 is usually 5 days.
3.What payment methods are accepted for DMN63D8LDWQ-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN63D8LDWQ-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN63D8LDWQ-7?
DMN63D8LDWQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN63D8LDWQ-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN63D8LDWQ-7?
For technical support, including DMN63D8LDWQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN63D8LDWQ-7 requirements.
6.How does Aetrix verify that DMN63D8LDWQ-7 is sourced from the original manufacturer or authorized distributors?
All DMN63D8LDWQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN63D8LDWQ-7 meets industry standards.
7.What is the process for return or replacement of DMN63D8LDWQ-7?
All DMN63D8LDWQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN63D8LDWQ-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN63D8LDWQ-7 part is unused and in its original packaging.
Return procedure for DMN63D8LDWQ-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMN63D8LDWQ-7 Tags

-
SSM6N7002KFU,LF
Toshiba Semiconductor and Storage

-
2N7002DW-7-F
Diodes Incorporated

-
SSM6L56FE,LM
Toshiba Semiconductor and Storage

-
SSM6N37FU,LF
Toshiba Semiconductor and Storage

-
2N7002DWH6327XTSA1
Infineon Technologies

-
2N7002BKS,115
Nexperia USA Inc.

-
DMG1016UDW-7
Diodes Incorporated

-
UM6K33NTN
Rohm Semiconductor

-
DMG6602SVT-7
Diodes Incorporated

-
EM6K34T2CR
Rohm Semiconductor

-
UM6K34NTCN
Rohm Semiconductor

-
DMG6601LVT-7
Diodes Incorporated
Tech Hub
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
