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Diodes Incorporated DMN63D8LV-7
- Part No.:
- DMN63D8LV-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-563, SOT-666
- Datasheet:
-
DMN63D8LV-7.pdf
- Description:
- MOSFET 2N-CH 30V 0.26A SOT563
- Quantity:
- Payment:
- Shipping:
Inventory:12,570
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Product details
Overview
DMN63D8LV-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT563 package, rated for 30V VDSS, 2.8Ω RDS(ON) @ VGS = 10V, and 260mA continuous drain current at +25°C. It integrates ESD-protected gates and delivers low input capacitance (22pF Ciss) and fast switching (3.3ns tD(on)), targeting compact power switches in battery-operated systems.
For engineers reviewing the DMN63D8LV-7 datasheet, DMN63D8LV-7 pinout, DMN63D8LV-7 application, or DMN63D8LV-7 equivalent, key selection criteria include dual-channel layout compatibility, gate drive voltage headroom down to 4.5V, thermal resistance (281°C/W), and JEDEC-qualified reliability for industrial embedded designs.
Technical Context
This dual MOSFET uses planar silicon process with optimized channel geometry to achieve sub-3Ω on-resistance at 10V gate drive while maintaining low Crss (2.0pF) and fast turn-off delay (12.0ns). Its internal structure isolates two independent N-channel devices sharing no substrate connection, enabling bidirectional load control or independent signal routing.
The device operates across –55°C to +150°C junction temperature range and supports gate voltages from ±20V, with VGS(th) tightly distributed between 0.8V and 1.5V. Its 0.006g mass and SOT563 footprint support ultra-thin portable PCB layouts requiring minimal board area.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30V - Maximum drain-source blocking voltage before avalanche conduction begins; defines safe operating range in 3.3V–24V rail switching. |
| RDS(ON) | 2.8Ω @ VGS = 10V - Enables <100mW conduction loss at 250mA, critical for thermally constrained DC-DC converter high-side switches. |
| ID (continuous) | 260mA @ +25°C - Specifies maximum steady-state current per channel without derating; requires thermal pad design for >200mA sustained operation. |
| Ciss | 22.0pF - Low input capacitance reduces gate drive power and speeds up switching transitions in low-power logic-level drivers. |
| tD(on) | 3.3ns - Short turn-on delay enables precise timing control in PWM-driven solenoid or relay interfaces with microsecond-scale duty cycles. |
| Qg | 0.87nC @ VGS = 10V - Minimal gate charge allows full enhancement using weak MCU GPIOs (e.g., 3.3V/20mA outputs) without external driver stages. |
| RθJA | 281°C/W - Thermal resistance measured on FR-4 with minimum pad layout; mandates copper pour or thermal vias for ambient >50°C operation. |
Pinout & Package
Package: SOT563 - 6-pin ultra-small surface-mount package (1.60 × 1.60 × 0.60 mm), molded plastic with UL 94V-0 rating, matte tin-plated terminals, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| S1 | Source of Channel 1 | Low-side return path for first MOSFET; internally connected to exposed thermal pad in standard layout. |
| G1 | Gate of Channel 1 | Control terminal for Channel 1; ESD-protected; threshold voltage 0.8–1.5V enables direct 3.3V logic drive. |
| D1 | Drain of Channel 1 | High-side output node for Channel 1; rated for 30V blocking and 260mA continuous current. |
| D2 | Drain of Channel 2 | Independent high-side output for second MOSFET; electrically isolated from D1 and all other pins. |
| G2 | Gate of Channel 2 | Separate control input for Channel 2; identical VGS(th) and Qg characteristics to G1. |
| S2 | Source of Channel 2 | Second low-side return; not internally tied to S1-supports floating or independently grounded loads. |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent N-channel topology | Enables two separate low-side switches in one footprint-reduces BOM count and PCB area vs. discrete single-MOSFET solutions. |
| ESD-protected gate structure | Withstands ≥2kV HBM per JESD22-A114; eliminates need for external gate protection in handheld or I/O-connected applications. |
| Low RDS(ON) at 4.5V VGS | 4.2Ω at 4.5V ensures usable on-resistance with 3.3V/5V microcontrollers-avoids gate boosting circuitry in space-constrained designs. |
| JEDEC-qualified reliability | Qualified to AEC-Q101 stress test standards; validated for high-reliability industrial use without automotive qualification overhead. |
| Halogen- and antimony-free "Green" construction | Meets RoHS 3 (2015/863/EU) with Br+Cl <1500ppm and Sb <1000ppm-complies with strict environmental compliance programs. |
Applications
| LED Backlight Control | USB Port Power Switching |
|---|---|
|
Use Scenario: Driving parallel LED strings in portable displays with individual brightness control via PWM. IC Role / Device Role / Timing Role: Dual low-side switch routing current from shared boost converter to two independent LED banks. Use Value: 2.8Ω RDS(ON) limits voltage drop to <0.7V at 250mA, preserving headroom for dimming control while minimizing heat in thin bezels. |
Use Scenario: Enabling/disabling VBUS power to downstream USB peripherals in battery-powered hubs. IC Role / Device Role / Timing Role: Dual-channel load switch providing independent overcurrent protection and hot-swap sequencing for two USB ports. Use Value: Fast 3.3ns turn-on delay synchronizes with USB enumeration timing; low 0.87nC Qg allows direct GPIO control without timing skew. |
| Smart Sensor Node Power Gating | Industrial Solenoid Driver Interface |
|
Use Scenario: Powering intermittent sensors (e.g., temperature, humidity) in wireless IoT nodes to extend battery life. IC Role / Device Role / Timing Role: Dual enable switch isolating sensor supply rails during sleep mode; each channel controls separate subsystem. Use Value: 1.0µA max IDSS at 30V ensures <30nW leakage per channel-critical for multi-year coin-cell operation in always-off states. |
Use Scenario: Driving 12V solenoids in programmable logic controllers with microcontroller-level isolation. IC Role / Device Role / Timing Role: Low-side driver stage translating 3.3V logic signals into 260mA coil current paths with flyback diode integration. Use Value: Integrated body diode (VSD = 0.8–1.2V) clamps inductive kickback without external components-reducing bill-of-materials by one diode per channel. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN63D8LW-7 | Same die, SOT363 package (larger footprint, higher RθJA = 320°C/W) | Less suitable for ultra-dense layouts; better thermal margin only with larger copper area | Select when board assembly uses legacy SOT363 tooling or requires higher creepage clearance. |
| AOB410L | Single-channel 30V MOSFET, 2.5mΩ RDS(ON), SO-8 package, 11A rating | Higher current capacity but occupies 5× more PCB area; no dual-channel integration | Choose only if >500mA per channel is required and dual functionality is implemented externally. |
Compared with DMN63D8LV-7, DMN63D8LW-7 trades miniaturization for slightly relaxed thermal constraints, while AOB410L abandons dual-channel integration entirely for raw current handling-neither offers the same combination of size, dual functionality, and 3.3V-compatible gate drive.
Availability
DMN63D8LV-7 is available at Aetrix Electronics and suitable for DC-DC converters, battery management systems, and solid-state relay modules requiring stable component supply and JEDEC-qualified reliability.
Supply support for DMN63D8LV-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in ASE and Amkor facilities.
The DMN63D8LV belongs to Diodes' "Logic-Level Dual MOSFET" product line, engineered specifically for space-constrained, low-voltage power switching where dual independent control and minimal gate drive demand are essential.
FAQ
Is DMN63D8LV-7 suitable for 3.3V microcontroller GPIO direct drive?
Yes. With VGS(th) ranging from 0.8V to 1.5V and RDS(ON) = 4.2Ω at VGS = 4.5V, it fully enhances using standard 3.3V logic outputs. At 250mA load, conduction loss remains under 265mW-well within its 450mW power rating when properly laid out.
Does DMN63D8LV-7 integrate back-to-back MOSFETs for AC switching?
No. It contains two independent N-channel enhancement-mode MOSFETs with separate source, gate, and drain terminals. There is no internal series or anti-series connection-each channel functions as a unidirectional low-side switch only.
What is the maximum pulsed drain current rating and under what conditions?
The pulsed drain current is 800mA, specified for 10µs pulse width with 1% duty cycle at TA = +25°C. This rating assumes short-duration operation with negligible self-heating; sustained current must be limited to 260mA (at +25°C) or derated per RθJA = 281°C/W.
Can DMN63D8LV-7 replace older SOT363 dual MOSFETs in existing designs?
Yes, with layout adaptation. Pinout differs: SOT563 uses S1-G1-D1-D2-G2-S2 sequence versus SOT363's S1-G1-D1-S2-G2-D2. The smaller footprint requires PCB redesign, but electrical behavior-including RDS(ON), Qg, and VDSS-is functionally identical to DMN63D8LW-7.
DMN63D8LV-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 260mA
- Rds On (Max) @ Id, Vgs:
- 2.8Ohm @ 250mA, 10V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.87nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 22pF @ 25V
- Power - Max:
- 450mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-563
DMN63D8LV-7 FAQ
1.How can I place an order for DMN63D8LV-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN63D8LV-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN63D8LV-7 reliable?
The price and inventory of DMN63D8LV-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN63D8LV-7 is usually 5 days.
3.What payment methods are accepted for DMN63D8LV-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN63D8LV-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN63D8LV-7?
DMN63D8LV-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN63D8LV-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN63D8LV-7?
For technical support, including DMN63D8LV-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN63D8LV-7 requirements.
6.How does Aetrix verify that DMN63D8LV-7 is sourced from the original manufacturer or authorized distributors?
All DMN63D8LV-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN63D8LV-7 meets industry standards.
7.What is the process for return or replacement of DMN63D8LV-7?
All DMN63D8LV-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN63D8LV-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN63D8LV-7 part is unused and in its original packaging.
Return procedure for DMN63D8LV-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMN63D8LV-7 Tags
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