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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN65D7LFR4-7

Name: DMN65D7LFR4-7
Brand: Diodes Incorporated
SKU: DMN65D7LFR4-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN65D7LFR4-7

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 4-XDFN Exposed Pad

Datasheet:: DMN65D7LFR4-7.pdf

Description:: MOSFET BVDSS: 41V~60V X2-DFN1010

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Product details

Overview

DMN65D7LFR4-7 from Diodes Incorporated is an N-channel enhancement-mode MOSFET designed for low-power load switching in space-constrained applications. It delivers 60 V V_DSS, R_DS(ON) = 1.4 Ω @ V_GS = 10 V (typ), 0.26 A continuous drain current at +25°C, and operates across –55°C to +150°C junction temperature range - ideal for battery-powered IoT sensors and portable USB power switches.

For engineers reviewing the DMN65D7LFR4-7 datasheet, DMN65D7LFR4-7 pinout, DMN65D7LFR4-7 application, or DMN65D7LFR4-7 equivalent, key selection criteria include its ultra-small X2-DFN1010-4 package, low gate charge (Q_g = 1.04 nC @ 10 V), fast switching (t_F = 14.3 ns), ESD protection (2 kV HBM), and thermal resistance of 174°C/W on enhanced PCB layout.

Technical Context

This MOSFET uses a trench-gate process optimized for low R_DS(ON) while maintaining low input capacitance (C_iss = 41 pF) and fast turn-off delay (t_D(OFF) = 37.8 ns). Its gate threshold voltage (V_GS(TH) = 1.0–2.5 V) enables reliable logic-level drive from 3.3 V microcontrollers.

The integrated body diode exhibits V_SD = 0.85–1.1 V at 300 mA, with reverse recovery time t_RR = 19 ns and Q_RR = 9 nC - supporting efficient unidirectional flyback energy handling in low-duty-cycle load-switch topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - supports input rails up to 48 V DC without breakdown risk
R_DS(ON)	1.4 Ω @ V_GS = 10 V - limits conduction loss to ≤0.1 mW at 35 mA load
I_D (max)	0.26 A @ T_A = +25°C - suitable for sub-300 mA always-on or pulsed loads
Q_g	1.04 nC @ V_GS = 10 V - enables <1 µs full switching with 10 mA gate driver
t_F	14.3 ns - reduces switching transition losses in high-frequency enable/disable cycles
R_θJA	174 °C/W - requires ≥1 in² 2 oz copper pad for sustained 0.21 A at +70°C ambient
V_GS(TH)	1.0–2.5 V - ensures turn-on compatibility with 1.8 V/3.3 V GPIO and LDO control signals

Pinout & Package

Package: X2-DFN1010-4 (Type B), 1.0 mm × 1.0 mm × 0.39 mm, no leads, bottom-side thermal pad, RoHS-compliant NiPdAu finish.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Source terminal	Low-side return path; electrically and thermally connected to exposed pad
2 (Gate)	Control input	High-impedance MOS gate requiring <10 nA leakage; sensitive to ESD
3 (Drain)	Power output	Switched high-side node; connects to load; carries full I_D current
4 (Source)	Source terminal (tie to Pin 1)	Dual-source configuration improves current sharing and thermal spreading

Key Features

Feature	Design Value
Ultra-small footprint	X2-DFN1010-4 occupies only 1.0 mm² PCB area - fits inside 2.0 mm × 2.0 mm module envelopes
Low gate charge	Q_g = 1.04 nC minimizes gate drive power and enables direct MCU GPIO switching without buffer
ESD robustness	2 kV HBM rating eliminates need for external TVS in handheld device enable paths
Thermal performance	R_θJA = 174 °C/W on 1 in² copper allows 0.21 A continuous operation at +70°C ambient
Green compliance	Halogen- and antimony-free, RoHS 3 compliant - meets automotive PPAP and IATF 16949 traceability requirements

Applications

USB Power Switching

IoT Sensor Power Gating

Use Scenario: Enabling/disabling VBUS power to peripheral devices in portable USB-C accessories.

IC Role / Device Role / Timing Role: Low-side load switch controlling 5 V rail delivery with <100 µs response to host controller enable signal.

Use Value: Prevents standby current leakage (<1 µA I_DSS) and supports hot-plug sequencing per USB PD spec.

Use Scenario: Power cycling environmental sensors (e.g., BME280, Si7021) in battery-operated edge nodes.

IC Role / Device Role / Timing Role: High-efficiency power gate isolating sensor supply during sleep mode; driven by ARM Cortex-M0+ GPIO.

Use Value: Reduces system quiescent current by >95% versus always-on regulator, extending coin-cell life to >2 years.

Wearable Display Backlight Control

Medical Patch Power Sequencing

Use Scenario: PWM-dimming LED backlight in compact smartwatch displays with tight height constraints.

IC Role / Device Role / Timing Role: Fast-switching low-side switch modulating current through 20 mA white LEDs at 1–5 kHz.

Use Value: t_F = 14.3 ns and low C_oss = 4.5 pF minimize switching distortion and audible noise in dimming waveforms.

Use Scenario: Controlled power-up sequence for analog front-end (AFE) and BLE SoC in disposable biosensor patches.

IC Role / Device Role / Timing Role: Precision timing-controlled enable switch ensuring AFE powers before radio, avoiding brown-out resets.

Use Value: V_GS(TH) tolerance (1.0–2.5 V) guarantees reliable turn-on across battery voltage decay from 3.6 V to 2.2 V.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN65D8LFR4-7	R_DS(ON) = 1.8 Ω @ 10 V (higher), same package and V_DSS	Slightly higher conduction loss; identical pinout and drive requirements	Select when lower cost is prioritized over minimal I²R loss in <100 mA applications
AO3400A	R_DS(ON) = 0.042 Ω @ 10 V (much lower), but SOT-23-3 package (larger, higher R_θJA)	Requires larger board area and heatsinking for same current; not foot-print compatible	Choose only if >200 mA continuous current is needed and space permits SOT-23

Compared with DMN65D7LFR4-7, DMN65D8LFR4-7 trades 0.4 Ω higher R_DS(ON) for cost reduction in low-current gating, while AO3400A offers dramatically lower on-resistance but sacrifices miniaturization and thermal efficiency in ultra-compact designs.

Availability

DMN65D7LFR4-7 is available at Aetrix Electronics and suitable for USB power switching, IoT sensor power gating, and wearable display backlight control requiring stable component supply, long-lifecycle support, and consistent parametric performance across production batches.

Supply support for DMN65D7LFR4-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

This device belongs to Diodes' X2-DFN logic-level MOSFET product line, engineered specifically for ultra-compact, low-quiescent-power load switching in battery-powered consumer and medical wearables.

FAQ

What is the maximum safe operating voltage for DMN65D7LFR4-7?

The absolute maximum drain-source voltage (V_DSS) is 60 V DC. Operation above this value risks avalanche breakdown and permanent damage. For reliable long-term use, design margin recommends limiting V_DS to ≤48 V in transient-prone environments such as USB power delivery or automotive accessory circuits.

Can DMN65D7LFR4-7 be driven directly by a 3.3 V microcontroller GPIO?

Yes - its gate threshold voltage (V_GS(TH)) ranges from 1.0 V to 2.5 V, and R_DS(ON) is fully specified at V_GS = 4.5 V and 10 V. At 3.3 V, typical R_DS(ON) is ~2.1 Ω, delivering ~0.18 A with <0.07 V drop - sufficient for most low-current load-switch applications without level-shifting.

Does DMN65D7LFR4-7 include an integrated ESD protection diode?

Yes - the device is rated for 2 kV Human Body Model (HBM) ESD protection per JESD22-A114. This is achieved via internal gate protection structures shown in the datasheet's "ESD PROTECTED" marking diagram, eliminating need for external gate-series resistors or TVS diodes in most portable designs.

What is the recommended PCB pad layout for thermal performance?

Diodes specifies a 1-inch-square 2 oz copper thermal pad connected to the exposed source terminals (Pins 1 & 4) for optimal R_θJA = 174 °C/W. The recommended land pattern (X2-DFN1010-4 Type B) includes 0.65 mm center-to-center spacing, 0.35 mm × 0.53 mm solder pads, and 0.112 mm inner clearance - all detailed in Diodes' package outline document PN 00000000000000000000000000000000.

DMN65D7LFR4-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 4-XDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 260mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5Ohm @ 40mA, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 1.04 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 41 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 600mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: X2-DFN1010-4 (Type B)

DMN65D7LFR4-7 FAQ

1.How can I place an order for DMN65D7LFR4-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN65D7LFR4-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN65D7LFR4-7 reliable?

The price and inventory of DMN65D7LFR4-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN65D7LFR4-7 is usually 5 days.

3.What payment methods are accepted for DMN65D7LFR4-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN65D7LFR4-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN65D7LFR4-7?

DMN65D7LFR4-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN65D7LFR4-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN65D7LFR4-7?

For technical support, including DMN65D7LFR4-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN65D7LFR4-7 requirements.

6.How does Aetrix verify that DMN65D7LFR4-7 is sourced from the original manufacturer or authorized distributors?

All DMN65D7LFR4-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN65D7LFR4-7 meets industry standards.

7.What is the process for return or replacement of DMN65D7LFR4-7?

All DMN65D7LFR4-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN65D7LFR4-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN65D7LFR4-7 part is unused and in its original packaging.

Return procedure for DMN65D7LFR4-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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