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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Diodes Incorporated DMN65D8LDW-7

Name: DMN65D8LDW-7
Brand: Diodes Incorporated
SKU: DMN65D8LDW-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN65D8LDW-7

Manufacturer:: Diodes Incorporated

Category:: FET, MOSFET Arrays

Package:: 6-TSSOP, SC-88, SOT-363

Datasheet:: DMN65D8LDW-7.pdf

Description:: MOSFET 2N-CH 60V 0.18A SOT363

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Product details

Overview

DMN65D8LDW-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT363 package, rated for 60V V_DSS, 8Ω R_DS(on) @ 5V V_GS, and 200mA continuous drain current at 10V drive. It features low gate threshold (1.0–2.0V), 1kV HBM ESD protection, and fast switching (t_D(on) = 3.3ns) for compact power control in space-constrained DC-DC converters and battery-operated systems.

For engineers reviewing the DMN65D8LDW-7 datasheet, DMN65D8LDW-7 pinout, DMN65D8LDW-7 application, or DMN65D8LDW-7 equivalent, key selection criteria include dual-channel integration in 6-pin SOT363, guaranteed R_DS(on) at both 5V and 10V gate drive, thermal resistance of 330°C/W on 2oz copper, and JEDEC-qualified reliability for industrial embedded designs.

Technical Context

This dual MOSFET integrates two independent N-channel devices sharing no internal connection-each with separate gate, drain, and source terminals. Its low 2.2Ω typical R_DS(on) at 10V V_GS enables efficient low-current switching in load-switching and driver stages, while the 1.0–2.0V V_GS(th) supports direct interfacing with 3.3V and 5V logic without level-shifting.

The device uses standard silicon planar process with ESD-protected gates and exhibits low input capacitance (C_iss = 22pF) and fast turn-on/turn-off times (t_r = 3.2ns, t_f = 6.3ns), making it suitable for high-frequency PWM control in portable power management where layout parasitics must be minimized.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60V - supports input rails up to 48V nominal systems with margin
R_DS(on) @ 5V	8Ω max - enables 170mA load switching with <1.4V drop at full current
R_DS(on) @ 10V	6Ω max - reduces conduction loss by 25% vs. 5V drive in higher-voltage control paths
V_GS(th)	1.0–2.0V - ensures reliable turn-on from 3.3V microcontroller GPIOs
C_iss	22pF typical - limits gate drive power and enables clean edge integrity at >1MHz switching
ESD Rating	1kV HBM - protects against handling damage during SMT assembly and board test
R_θJA	330°C/W - requires minimal copper area (1-inch² 2oz pad) to sustain 200mA continuous

Pinout & Package

SOT363 (6-pin, 1.25mm × 2.2mm × 0.95mm) surface-mount package with gull-wing leads, UL 94V-0 mold compound, and matte tin lead finish over Alloy 42 leadframe.

Pin/Terminal	Circuit Role	Design Meaning
1 (S1)	Source of Channel 1	Low-side return path for first MOSFET; tied to local ground or current-sense node
2 (G1)	Gate of Channel 1	Control input requiring ≤2.0V threshold; driven directly by 3.3V logic
3 (D1)	Drain of Channel 1	Switched output node; connects to load anode or inductor switch node
4 (D2)	Drain of Channel 2	Independent second switched output; no internal connection to D1
5 (G2)	Gate of Channel 2	Separate control input enabling dual independent switching functions
6 (S2)	Source of Channel 2	Second independent source terminal; may be grounded or biased separately

Key Features

Feature	Design Value
Dual independent N-channel topology	Enables two discrete low-side switches in one footprint-reducing PCB area by ~40% vs. two SOT23 devices
Low R_DS(on) at 5V drive	Supports direct interface with 3.3V/5V MCUs without gate drivers, cutting BOM cost and layout complexity
Fast switching (t_r/t_f ≤ 3.2/6.3ns)	Minimizes transition losses in 1–5MHz DC-DC controllers, improving efficiency above 90%
1kV HBM ESD protection	Eliminates need for external TVS diodes in handheld and wearable product assembly lines
JEDEC-qualified reliability	Validated per AEC-Q stress standards-suitable for industrial equipment with 10+ year field life requirements

Applications

Battery-Powered Load Switching

Low-Voltage DC-DC Converter Control

Use Scenario: Power gating of sensors, radios, and peripherals in wearables and IoT nodes to extend battery life.

IC Role / Device Role / Timing Role: Dual low-side switch controlling enable paths for two independent subsystems with coordinated sequencing.

Use Value: 8Ω R_DS(on) at 5V ensures <1.4V dropout at 170mA, preserving voltage headroom for 3.3V LDOs downstream.

Use Scenario: Synchronous rectification and gate driving in buck converters for portable medical monitors.

IC Role / Device Role / Timing Role: Dual N-MOSFET used as high-side driver (with charge pump) and low-side synchronous switch.

Use Value: 22pF C_iss and 3.2ns rise time allow clean 2MHz PWM edges, reducing switching loss by 18% vs. comparable 40Ω devices.

LED and Display Backlight Control

Industrial Solenoid and Relay Drivers

Use Scenario: PWM dimming of RGB LED arrays and segment-based LCD backlights in smart home hubs.

IC Role / Device Role / Timing Role: Dual channel provides independent current sink control for red/green LED strings or segment anodes.

Use Value: 1.0–2.0V V_GS(th) ensures full turn-on with 2.8V Li-ion battery voltage, maintaining brightness across discharge curve.

Use Scenario: Driving 12V solenoids and miniature relays in programmable logic controllers and HVAC actuators.

IC Role / Device Role / Timing Role: Low-side switch replacing discrete transistors and flyback diodes in I/O expansion modules.

Use Value: 60V V_DSS and 200mA rating support 12V/100mA solenoid loads with 2× voltage margin for inductive kick suppression.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN65D8LQ-7	Same die, AEC-Q101 qualified; identical R_DS(on), V_DSS, and pinout	Required for automotive-grade production; includes PPAP documentation and IATF 16949 traceability	Select when functional safety compliance (ISO 26262 ASIL-B) or automotive change control is mandated
NTZD3154PT1G	Higher R_DS(on) (12Ω @ 4.5V); smaller 1.6mm × 1.6mm SOT563 package; no HBM rating specified	Limited to non-critical consumer applications; lacks JEDEC reliability validation	Choose only for cost-sensitive, non-industrial designs where thermal margin exceeds 50°C

Compared with DMN65D8LDW-7, DMN65D8LQ-7 adds automotive qualification without electrical trade-offs, while NTZD3154PT1G sacrifices on-resistance and reliability for smaller size-making the original optimal for industrial DC-DC and battery management where robustness and 5V compatibility are essential.

Availability

DMN65D8LDW-7 is available at Aetrix Electronics and suitable for battery-operated systems, DC-DC converter control, and solid-state relay replacement requiring stable component supply across multi-year production cycles.

Supply support for DMN65D8LDW-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal ICs, with design centers in Asia, Europe, and the U.S., and manufacturing in ISO/TS 16949-certified facilities.

The DMN65D8LDW-7 belongs to Diodes' "PowerMOS" family, engineered specifically for high-efficiency, low-voltage power switching in portable and industrial equipment where small footprint, low gate drive, and JEDEC reliability are critical.

FAQ

What is the maximum continuous drain current for DMN65D8LDW-7 at 70°C ambient?

At T_A = +70°C, the maximum continuous drain current is 160mA when V_GS = 10V (Note 6), and 140mA when V_GS = 5V. These values assume mounting on a 2oz copper FR-4 board with a 1-inch square pad layout, delivering 330°C/W thermal resistance to ambient.

Can DMN65D8LDW-7 be used as a high-side switch?

No-DMN65D8LDW-7 is a dual N-channel MOSFET with no integrated charge pump or bootstrap circuitry. It operates only as a low-side switch. For high-side use, an external gate driver or P-channel alternative (e.g., DMN63D8LFDW-7) is required to ensure sufficient V_GS above threshold.

Is the SOT363 package lead-free and RoHS compliant?

Yes-DMN65D8LDW-7 uses matte tin plating over Alloy 42 leadframe and is fully RoHS 3 compliant (2015/863/EU), with no intentionally added lead, halogen, or antimony. It meets UL 94V-0 flammability rating and J-STD-020 moisture sensitivity Level 1.

Does this part include body diode conduction capability?

Yes-each channel includes an intrinsic body diode (V_SD = 0.8–1.2V at 115mA). This allows freewheeling current in inductive loads like solenoids and relays, but the diode is not optimized for reverse recovery and should not be used in synchronous rectifier topologies requiring fast recovery.

DMN65D8LDW-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 6-TSSOP, SC-88, SOT-363

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 N-Channel (Dual)

FET Feature:: Logic Level Gate

Drain to Source Voltage (Vdss):: 60V

Current - Continuous Drain (Id) @ 25°C:: 180mA

Rds On (Max) @ Id, Vgs:: 6Ohm @ 115mA, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 0.87nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:: 22pF @ 25V

Power - Max:: 300mW

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-363

DMN65D8LDW-7 FAQ

1.How can I place an order for DMN65D8LDW-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN65D8LDW-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN65D8LDW-7 reliable?

The price and inventory of DMN65D8LDW-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN65D8LDW-7 is usually 5 days.

3.What payment methods are accepted for DMN65D8LDW-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN65D8LDW-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN65D8LDW-7?

DMN65D8LDW-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN65D8LDW-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN65D8LDW-7?

For technical support, including DMN65D8LDW-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN65D8LDW-7 requirements.

6.How does Aetrix verify that DMN65D8LDW-7 is sourced from the original manufacturer or authorized distributors?

All DMN65D8LDW-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN65D8LDW-7 meets industry standards.

7.What is the process for return or replacement of DMN65D8LDW-7?

All DMN65D8LDW-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN65D8LDW-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN65D8LDW-7 part is unused and in its original packaging.

Return procedure for DMN65D8LDW-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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