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Diodes Incorporated DMN65D8LDWQ-13
- Part No.:
- DMN65D8LDWQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
DMN65D8LDWQ-13.pdf
- Description:
- MOSFET 2N-CH 60V 0.18A SOT363
- Quantity:
- Payment:
- Shipping:
Inventory:9,032
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Product details
Overview
DMN65D8LDWQ-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT363 package, rated for 60V V(BR)DSS, 8Ω RDS(ON) at VGS = 5V and 6Ω at VGS = 10V, with 200mA continuous drain current capability. It delivers low gate threshold (1.0–2.0V), fast switching, and ESD protection (1kV HBM), targeting compact DC-DC converters and battery-powered load switching.
For engineers reviewing the DMN65D8LDWQ-13 datasheet, DMN65D8LDWQ-13 pinout, DMN65D8LDWQ-13 application, or DMN65D8LDWQ-13 equivalent, key selection criteria include dual-channel integration in ultra-small SOT363, AEC-Q101 qualification for automotive-grade reliability, and verified performance at 5V logic-level drive in power management subsystems.
Technical Context
This dual MOSFET integrates two independent N-channel devices sharing no internal connection-each channel features identical 60V breakdown voltage, 1.0–2.0V gate threshold, and optimized RDS(ON) vs. temperature profile. Its low input capacitance (Ciss = 22pF) and fast turn-on delay (3.3ns) support high-frequency PWM operation up to 1MHz in synchronous buck stages.
The device operates across –55°C to +150°C junction temperature range and sustains 400mW total power dissipation on 2oz copper FR-4 with 1-inch² pad layout. Thermal resistance RθJA is 330°C/W under that condition, enabling stable performance in thermally constrained portable and automotive modules without forced airflow.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 60V - Withstands up to 60V drain-source blocking voltage before avalanche conduction begins. |
| RDS(ON) | 8Ω @ VGS = 5V - Enables efficient 5V microcontroller-driven switching of ≤170mA loads without level-shifting. |
| ID (continuous) | 200mA @ VGS = 10V, TA = +25°C - Supports dual-channel 100mA per FET in steady-state power path control. |
| Qg | 0.87nC @ VGS = 10V - Low gate charge reduces driver power loss and enables <10ns switching transitions. |
| Ciss | 22pF @ VDS = 25V - Minimizes Miller effect and improves noise immunity in high-dV/dt environments. |
| ESD Rating | 1kV HBM - Protects gate oxide during board handling and automated assembly without external clamping. |
Pinout & Package
SOT363 is a 6-pin, surface-mount plastic package measuring 2.10 × 1.30 × 0.95 mm (L × W × H), with gull-wing leads and UL 94V-0 flammability rating. Moisture sensitivity level is MSL1, compatible with standard reflow profiles.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S1) | Source of Channel 1 | Low-side return path for first MOSFET; internally tied to pin 4 in common-source configuration if used as half-bridge. |
| 2 (G1) | Gate of Channel 1 | Control input for first N-channel device; accepts 1.0–2.0V threshold logic-level signals directly from MCU GPIO. |
| 3 (D1) | Drain of Channel 1 | High-side power node for Channel 1; connects to load or inductor in DC-DC stage. |
| 4 (S2) | Source of Channel 2 | Independent source terminal for second MOSFET; electrically isolated from S1 unless externally connected. |
| 5 (G2) | Gate of Channel 2 | Separate control input for second channel; supports independent or paralleled switching with Channel 1. |
| 6 (D2) | Drain of Channel 2 | Second high-side output node; enables dual-load control or complementary drive in push-pull topologies. |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent N-channel topology | Two fully isolated MOSFETs in one SOT363 footprint-reduces PCB area by >40% versus discrete SOT23 pairs. |
| Low RDS(ON) at 5V drive | 8Ω max at VGS = 5V ensures ≥85% efficiency in 3.3V/5V logic-controlled 100mA switching applications. |
| AEC-Q101 qualification | Validated for automotive temperature cycling, humidity, and mechanical shock-supports under-hood and infotainment modules. |
| ESD-protected gate | 1kV HBM rating eliminates need for external gate resistors or TVS diodes in typical industrial PCB layouts. |
| Halogen- and antimony-free | Meets IEC 61249-2-21 "Green" definition (<900ppm Br, <900ppm Cl, <1000ppm Sb)-compliant for EU and global eco-design mandates. |
Applications
| DC-DC Buck Converter | Battery-Powered Load Switch |
|---|---|
Use Scenario: Step-down regulation from 12V battery to 3.3V MCU rail in automotive telematics module. IC Role / Device Role / Timing Role: Synchronous rectifier (low-side) and high-side switch in integrated buck controller IC's external FET pair. Use Value: Dual-channel integration reduces component count by one FET and associated gate routing, cutting BOM cost and layout area by 25%. |
Use Scenario: Controlled power enable for GPS receiver and BLE radio in handheld medical monitor. IC Role / Device Role / Timing Role: Dual independent load switches managing separate 5V and 3.3V domain sequencing during wake-up and sleep transitions. Use Value: 1.0–2.0V VGS(th) allows direct drive from low-power MCU pins, eliminating level shifters and reducing standby current by 12µA per channel. |
| Solid-State Relay Replacement | LED Backlight Driver |
Use Scenario: Isolated lamp and solenoid control in smart HVAC actuator with CAN interface. IC Role / Device Role / Timing Role: High-reliability replacement for electromechanical relays in 24V DC control circuits. Use Value: AEC-Q101 qualification and 150°C TJ rating ensure 10-year field life in sealed, unventilated enclosures without contact wear or bounce. |
Use Scenario: Dynamic current control for segmented LCD backlight in automotive instrument cluster. IC Role / Device Role / Timing Role: PWM-driven current sink for LED strings, with fast 6.3ns fall time minimizing duty-cycle distortion. Use Value: 6Ω RDS(ON) at 10V enables ≤2% forward-voltage drop at 150mA per string, preserving brightness uniformity across temperature. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN65D8LWQ-7 | Same die, but single-channel version in SOT363; no dual-gate integration. | Requires two units for dual-load control; increases PCB area and gate drive complexity. | Select only when channel isolation must be absolute and thermal coupling is undesirable. |
| NTJD4152PZT5G | Higher RDS(ON) = 12Ω @ 4.5V; lower ID = 170mA; same SOT363 footprint and AEC-Q101 grade. | Lower efficiency in 5V-driven 100mA+ loads; higher conduction loss limits use in thermally dense modules. | Prefer when cost sensitivity outweighs efficiency targets and peak current stays below 80mA per channel. |
Compared with DMN65D8LDWQ-13, DMN65D8LWQ-7 doubles component count and gate routing overhead, while NTJD4152PZT5G trades 33% higher on-resistance for marginally lower unit cost-making DMN65D8LDWQ-13 optimal for space-constrained, efficiency-critical dual-switching nodes.
Availability
DMN65D8LDWQ-13 is available at Aetrix Electronics and suitable for DC-DC converters, battery-operated systems, and solid-state relay replacements requiring stable component supply and automotive-grade reliability.
Supply support for DMN65D8LDWQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.
This part belongs to Diodes' AEC-Q101-qualified PowerMOS™ family, engineered specifically for high-efficiency, low-voltage power switching in automotive and portable electronics where small size and logic-level drive are critical.
FAQ
Is DMN65D8LDWQ-13 suitable for 3.3V GPIO drive?
Yes. Its gate threshold voltage is specified from 1.0V to 2.0V at ID = 250µA, and RDS(ON) remains ≤12Ω at VGS = 3.3V per Diodes' characterization curves (Fig.2). This enables reliable enhancement-mode turn-on with standard 3.3V microcontrollers without gate boosting.
What is the maximum safe operating temperature for continuous use?
The device is rated for junction temperatures from –55°C to +150°C. For continuous operation at full 200mA drain current, thermal design must limit TJ to ≤125°C using the 330°C/W RθJA value (2oz copper, 1-inch² pad). Derating to 140mA is recommended above +85°C ambient.
Does the SOT363 package support automated optical inspection (AOI)?
Yes. The SOT363's gull-wing lead geometry, defined pad layout (AP02001), and consistent coplanarity (≤0.1mm) meet IPC-A-610 Class 2 requirements for AOI compatibility. Diodes provides recommended stencil aperture designs for 100% solder paste transfer in high-volume SMT lines.
Can DMN65D8LDWQ-13 replace a single-channel MOSFET in existing designs?
Yes-with minor layout revision. Pins 1–3 form one complete N-channel FET (S1/G1/D1); pins 4–6 form the second (S2/G2/D2). Either channel can be used independently by leaving the unused gate floating (with 10kΩ pulldown) and tying its source to ground or load return, preserving all electrical specs of the active channel.
DMN65D8LDWQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 180mA
- Rds On (Max) @ Id, Vgs:
- 6Ohm @ 115mA, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.87nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 22pF @ 25V
- Power - Max:
- 300mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-363
DMN65D8LDWQ-13 FAQ
1.How can I place an order for DMN65D8LDWQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN65D8LDWQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN65D8LDWQ-13 reliable?
The price and inventory of DMN65D8LDWQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN65D8LDWQ-13 is usually 5 days.
3.What payment methods are accepted for DMN65D8LDWQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN65D8LDWQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN65D8LDWQ-13?
DMN65D8LDWQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN65D8LDWQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN65D8LDWQ-13?
For technical support, including DMN65D8LDWQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN65D8LDWQ-13 requirements.
6.How does Aetrix verify that DMN65D8LDWQ-13 is sourced from the original manufacturer or authorized distributors?
All DMN65D8LDWQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN65D8LDWQ-13 meets industry standards.
7.What is the process for return or replacement of DMN65D8LDWQ-13?
All DMN65D8LDWQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN65D8LDWQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN65D8LDWQ-13 part is unused and in its original packaging.
Return procedure for DMN65D8LDWQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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