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Diodes Incorporated DMN65D8LDWQ-7
- Part No.:
- DMN65D8LDWQ-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
DMN65D8LDWQ-7.pdf
- Description:
- MOSFET 2N-CH 60V 0.18A SOT363
- Quantity:
- Payment:
- Shipping:
Inventory:3,906
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Product details
Overview
DMN65D8LDWQ-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT363 package, rated for 60V V(BR)DSS, 8Ω RDS(ON) at VGS = 5V and 6Ω at VGS = 10V, with 200mA continuous drain current capability. It delivers low gate threshold (1.0–2.0V), fast switching, and ESD protection (1kV HBM), targeting compact power management in space-constrained battery-operated systems.
For engineers reviewing the DMN65D8LDWQ-7 datasheet, DMN65D8LDWQ-7 pinout, DMN65D8LDWQ-7 application, or DMN65D8LDWQ-7 equivalent, key selection criteria include dual-channel on-resistance matching, AEC-Q101 qualification for automotive-grade reliability, thermal resistance (RθJA = 330°C/W on 2oz copper), and gate charge (Qg = 0.43nC at 4.5V) for efficient low-voltage drive.
Technical Context
This dual MOSFET integrates two matched N-channel devices in a single SOT363 package, enabling independent or complementary switching in half-bridge, load-switching, or dual-driver configurations. Its low 1.0–2.0V VGS(th) ensures reliable turn-on from 3.3V and 5V logic, while low Ciss (22pF) and Crss (2.0pF) support high-frequency operation up to several MHz.
The device is thermally optimized for surface-mount PCBs with 2oz copper pads (RθJA = 330°C/W), and its 1kV HBM ESD rating and AEC-Q101 qualification confirm suitability for automotive body electronics and industrial control modules where robustness against transient stress and temperature cycling is required.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 60V - Withstands up to 60V drain-source blocking voltage without breakdown, suitable for 24V and 48V system rails. |
| RDS(ON) | 6Ω @ VGS = 10V - Enables <120mW conduction loss at 115mA, critical for thermally constrained DC-DC converter switches. |
| ID (continuous) | 200mA @ TA = +25°C, VGS = 10V - Supports dual-channel loads up to 200mA per FET with derating above 70°C. |
| VGS(th) | 1.0–2.0V - Ensures full enhancement with standard 3.3V microcontroller GPIO, eliminating need for level-shifting. |
| Ciss / Crss | 22pF / 2.0pF - Low input and reverse transfer capacitance minimizes gate drive energy and reduces switching losses in PWM circuits. |
| Qg | 0.43nC @ VGS = 4.5V - Allows fast turn-on with minimal gate driver current (<1mA peak), easing integration with low-power MCUs. |
| TJ range | –55°C to +150°C - Qualified for under-hood automotive and industrial environments with wide ambient operating margins. |
Pinout & Package
SOT363 is a 6-pin, surface-mount plastic package (2.10 × 1.30 × 0.95 mm) with gull-wing leads, UL 94V-0 flammability rating, and moisture sensitivity level 1. It supports automated placement and reflow soldering per MIL-STD-202.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S1) | Source of Channel 1 | Common source node for first MOSFET; tied to ground or low-side return path in dual-switch topologies. |
| 2 (G1) | Gate of Channel 1 | Control input for first MOSFET; requires <0.43nC charge for full turn-on at 4.5V drive. |
| 3 (D1) | Drain of Channel 1 | High-side or load-switch output node; handles up to 60V and 200mA with 6Ω on-resistance. |
| 4 (D2) | Drain of Channel 2 | Independent high-side output for second channel; electrically isolated but thermally coupled to D1. |
| 5 (G2) | Gate of Channel 2 | Separate control input enabling asynchronous or synchronized dual switching without cross-talk. |
| 6 (S2) | Source of Channel 2 | Second source terminal; may be tied to S1 for common-source configuration or left independent for floating loads. |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel topology | Two matched MOSFETs in one SOT363 footprint reduce board area by ~40% vs. discrete solutions and improve thermal coupling. |
| Low RDS(ON) at 5V drive | 8Ω @ VGS = 5V enables efficient operation directly from USB-powered or 5V MCU I/O without gate boosting. |
| AEC-Q101 qualification | Validated for automotive applications including body control modules and LED lighting drivers requiring high-reliability stress screening. |
| 1kV HBM ESD protection | Integrated gate oxide protection eliminates need for external TVS diodes in handheld and portable equipment assembly lines. |
| Halogen- and antimony-free | Meets "Green" definition (<900ppm Br, <900ppm Cl, <1000ppm Sb), supporting RoHS 2 and automotive ELV compliance. |
Applications
| DC-DC Converter Switch | Battery Protection Circuit |
|---|---|
|
Use Scenario: Used as synchronous rectifier or high-side switch in compact 3.3V/5V buck converters for wearables and IoT sensors. IC Role / Device Role / Timing Role: Dual-channel configuration allows interleaved or phase-shifted switching to reduce ripple and improve efficiency. Use Value: 6Ω RDS(ON) at 10V and 0.43nC Qg cut conduction and switching losses by >25% versus legacy 12Ω MOSFETs in 1MHz designs. |
Use Scenario: Implements dual-path overcurrent and reverse-polarity protection in 2-cell Li-ion battery packs for medical monitors. IC Role / Device Role / Timing Role: Each channel independently controls charge and discharge paths, with fast turn-off (<10ns fall time) preventing fault propagation. Use Value: Matched VGS(th) tolerance (±0.5V) ensures balanced current sharing between channels during load dump events. |
| Automotive LED Driver | Industrial Solenoid Interface |
|
Use Scenario: Drives multiplexed LED clusters in automotive interior lighting with PWM dimming up to 2kHz. IC Role / Device Role / Timing Role: Acts as low-side current sink per LED string; dual layout simplifies routing for multi-zone control. Use Value: –55°C to +150°C TJ range and AEC-Q101 qualification ensure stable brightness and lifetime across cabin temperature extremes. |
Use Scenario: Controls 12V solenoids in programmable logic controller (PLC) output modules with 10ms on/off cycles. IC Role / Device Role / Timing Role: Provides isolated, logic-level-driven switching with integrated ESD protection to withstand field-induced transients. Use Value: 800mA pulsed drain current (IDM) supports 5× inrush current margin for 150mA steady-state solenoid loads. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN65D8LWQ-7 | Single-channel variant, same RDS(ON), V(BR)DSS, and package; lacks second MOSFET. | Used where only one switch is needed; saves cost but doubles footprint for dual-function designs. | Select when design requires only one switch and board area is not constrained. |
| NTJD4152PT1G | Higher RDS(ON) (12Ω @ 4.5V), lower ID (170mA), same SOT363, no AEC-Q101 qualification. | Suitable for non-automotive consumer applications; lacks thermal and reliability validation for harsh environments. | Choose for cost-sensitive, non-automotive applications where 20% higher conduction loss is acceptable. |
Compared with DMN65D8LDWQ-7, DMN65D8LWQ-7 reduces channel count but increases PCB area for dual functions, while NTJD4152PT1G trades AEC-Q101 compliance and on-resistance for lower unit cost-making DMN65D8LDWQ-7 optimal for space-limited, automotive-qualified dual-switching.
Availability
DMN65D8LDWQ-7 is available at Aetrix Electronics and suitable for DC-DC converters, battery management systems, and automotive LED lighting requiring stable component supply across production lifecycles.
Supply support for DMN65D8LDWQ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection solutions for industrial, automotive, and consumer markets.
The DMN65D8LDWQ-7 belongs to Diodes' AEC-Q101-qualified small-signal MOSFET product line, engineered specifically for space-constrained, high-reliability power switching in automotive body electronics and portable industrial controls.
FAQ
What is the maximum safe operating voltage for DMN65D8LDWQ-7?
The absolute maximum drain-source voltage (V(BR)DSS) is 60V, tested at ID = 250µA with VGS = 0V. Operation above 60V risks avalanche breakdown and permanent damage. For reliable long-term use, design margin should limit VDS to ≤48V in 24V systems or ≤54V in 48V systems with transient clamping.
Can DMN65D8LDWQ-7 be driven directly from a 3.3V microcontroller GPIO?
Yes. With a guaranteed VGS(th) of 1.0–2.0V and typical RDS(ON) of 8Ω at VGS = 5V (and usable conduction even at 3.3V), the device fully enhances using standard 3.3V logic. Gate charge is only 0.43nC at 4.5V, so typical MCU GPIOs can drive it without external buffers in low-frequency switching.
Is thermal derating required for continuous operation at 70°C ambient?
Yes. At TA = +70°C, the continuous drain current drops to 160mA (VGS = 10V) due to thermal limits. The device's RθJA is 330°C/W on 2oz copper; junction temperature must stay below +150°C. For 200mA operation at 70°C ambient, additional copper pour or airflow is required to maintain TJ ≤ 130°C.
Does DMN65D8LDWQ-7 support bidirectional current flow like a transmission gate?
No. As an enhancement-mode N-channel MOSFET, it conducts only from drain to source when VGS exceeds VGS(th). The intrinsic body diode allows forward conduction from source to drain, but true bidirectional switching requires external circuitry (e.g., back-to-back configuration) or a dedicated analog switch IC.
DMN65D8LDWQ-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 180mA
- Rds On (Max) @ Id, Vgs:
- 6Ohm @ 115mA, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.87nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 22pF @ 25V
- Power - Max:
- 300mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-363
DMN65D8LDWQ-7 FAQ
1.How can I place an order for DMN65D8LDWQ-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN65D8LDWQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN65D8LDWQ-7 reliable?
The price and inventory of DMN65D8LDWQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN65D8LDWQ-7 is usually 5 days.
3.What payment methods are accepted for DMN65D8LDWQ-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN65D8LDWQ-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN65D8LDWQ-7?
DMN65D8LDWQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN65D8LDWQ-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN65D8LDWQ-7?
For technical support, including DMN65D8LDWQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN65D8LDWQ-7 requirements.
6.How does Aetrix verify that DMN65D8LDWQ-7 is sourced from the original manufacturer or authorized distributors?
All DMN65D8LDWQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN65D8LDWQ-7 meets industry standards.
7.What is the process for return or replacement of DMN65D8LDWQ-7?
All DMN65D8LDWQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN65D8LDWQ-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN65D8LDWQ-7 part is unused and in its original packaging.
Return procedure for DMN65D8LDWQ-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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