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Diodes Incorporated DMN65D8LQ-13
- Part No.:
- DMN65D8LQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
DMN65D8LQ-13.pdf
- Description:
- MOSFET N-CH 60V 310MA SOT23
- Quantity:
- Payment:
- Shipping:
Inventory:10,069
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Product details
Overview
DMN65D8LQ-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in SOT23 package, rated for 60V V(BR)DSS, 3Ω RDS(ON) @ 10V VGS, and 310mA continuous drain current at 25°C - optimized for low-power switching in battery-operated systems and DC-DC converters.
For engineers reviewing the DMN65D8LQ-13 datasheet, DMN65D8LQ-13 pinout, DMN65D8LQ-13 application, or DMN65D8LQ-13 equivalent, key selection criteria include gate threshold voltage (1.2–2.0V), low input capacitance (22pF Ciss), fast switching times (2.7ns tD(on)), ESD protection (1kV), and AEC-Q101 qualification for automotive-grade reliability.
Technical Context
This MOSFET employs planar silicon process technology to achieve low on-resistance while maintaining robust gate oxide integrity and thermal stability. Its 1.2–2.0V gate threshold enables direct drive from 3.3V/5V logic without level-shifting, and its 22pF input capacitance supports high-frequency PWM operation up to several MHz in compact power stages.
The device integrates a body diode with 0.8–1.2V forward voltage and 500mA continuous current capability, enabling bidirectional current handling in H-bridge or synchronous rectifier configurations. Thermal resistance of 348°C/W (Junction-to-Ambient, FR-4, minimal pad) defines its derating envelope in space-constrained PCB layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 60V - maximum blocking voltage before avalanche conduction; suitable for 24V system rails with margin. |
| RDS(ON) | 3Ω @ VGS = 10V - determines I²R conduction loss in 310mA steady-state load; drops to ~2.5Ω at 5V drive. |
| VGS(th) | 1.2–2.0V - ensures reliable turn-on from standard microcontroller GPIOs (3.3V/5V) without external gate drivers. |
| Ciss | 22pF - limits gate drive energy and switching transition time; enables <5ns rise/fall in low-inductance layouts. |
| Qg | 0.87nC @ VGS = 10V - quantifies total gate charge required per switching cycle; critical for driver sizing and efficiency modeling. |
| TJ Range | −55°C to +150°C - supports operation in automotive under-hood and industrial ambient environments. |
| ESD Rating | 1kV HBM - protects against handling damage during SMT assembly and board-level integration. |
Pinout & Package
SOT23-3 surface-mount package: molded plastic case (UL 94V-0), 0.006g weight, 2oz copper FR-4 layout compatible, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Current return path for channel conduction | Connected to ground or low-side reference; forms cathode of integrated body diode. |
| 2 (Gate) | Control terminal for channel inversion | High-impedance input requiring <5µA leakage; protected by integrated 1kV ESD diode to source. |
| 3 (Drain) | High-side current output node | Carries switched load current; connects to positive rail or inductive load; anode of body diode. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at low VGS | 4Ω @ 5V VGS enables efficient 3.3V MCU control without gate boosting. |
| Fast switching speed | 2.7ns turn-on delay + 2.8ns rise time minimizes switching loss in >1MHz DC-DC topologies. |
| AEC-Q101 qualification | Validated for automotive applications including body electronics and infotainment power rails. |
| Green RoHS compliance | Halogen- and antimony-free (<900ppm Br/Cl, <1000ppm Sb); matte tin lead finish over Alloy 42. |
| Thermal robustness | 150°C max junction temperature and 91°C/W RθJC support sustained operation under thermal stress. |
Applications
| Battery-Powered IoT Sensors | Automotive Body Control Modules |
|---|---|
Use Scenario: Low-duty-cycle sensor node powering BLE transceiver and analog front-end from coin cell or Li-ion. IC Role / Device Role / Timing Role: High-side load switch controlling power to RF IC and ADC during active periods. Use Value: 310mA rating and 3Ω RDS(ON) limit dropout to <1V at peak current, preserving battery runtime and signal integrity. | Use Scenario: Driving LED indicators, small solenoids, and relay coils in door module or lighting control unit. IC Role / Device Role / Timing Role: Low-side switch interfacing MCU GPIO to inductive loads with integrated flyback diode conduction path. Use Value: 500mA body diode current rating and −55°C to +150°C operation ensure reliability across vehicle lifecycle and environmental extremes. |
| USB-C Power Delivery Accessories | Industrial PLC I/O Expansion Cards |
Use Scenario: Load switching for VBUS path control and port power negotiation in compact USB-C adapters. IC Role / Device Role / Timing Role: Bidirectional switch managing VBUS enable/disable with fast response to PD controller commands. Use Value: 60V V(BR)DSS provides margin above 20V PD specification; 0.87nC Qg enables sub-microsecond switching synchronized to PD protocol timing. | Use Scenario: Isolated digital output stage driving 24V DC solenoid valves and indicator lamps in factory automation hardware. IC Role / Device Role / Timing Role: Logic-level N-channel switch translating 3.3V FPGA or ARM core outputs to 24V load interface. Use Value: 1.2–2.0V VGS(th) guarantees turn-on at 3.3V logic high; AEC-Q101 qualification adds confidence for long-lifecycle industrial deployments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel low-voltage MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3026LSD-13 | 30V V(BR)DSS, 2.6Ω RDS(ON) @ 4.5V, dual-N in SO-8 | Limited to ≤30V systems; higher current capacity but larger footprint | Select when higher ID (1.4A) and dual-channel integration outweigh voltage and size constraints. |
| AO3400 | 30V V(BR)DSS, 28mΩ RDS(ON) @ 10V, same SOT23-3 package | Lower voltage rating and significantly lower RDS(ON), but no AEC-Q101 qualification | Choose for cost-sensitive consumer DC-DC where automotive reliability is not required. |
Compared with DMN65D8LQ-13, DMN3026LSD-13 offers higher current and dual functionality at the expense of voltage headroom and package size, while AO3400 delivers superior conduction efficiency below 30V but lacks automotive qualification and thermal robustness at elevated temperatures.
Availability
DMN65D8LQ-13 is available at Aetrix Electronics and suitable for battery-operated IoT sensors, automotive body control modules, and USB-C power delivery accessories requiring stable component supply and long-term manufacturability.
Supply support for DMN65D8LQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal devices, with design centers in Asia, Europe, and the US, serving industrial, computing, communications, and automotive markets.
DMN65D8LQ-13 belongs to Diodes' AEC-Q101-qualified power MOSFET product line, engineered for high-reliability, low-power switching in space-constrained and thermally demanding applications such as automotive subsystems and portable electronics.
FAQ
What is the maximum continuous drain current for DMN65D8LQ-13 at 70°C ambient?
At TA = +70°C, the continuous drain current is 240mA when VGS = 10V and 210mA when VGS = 5V, based on thermal derating from the 370mW power dissipation limit and 348°C/W RθJA on standard FR-4 PCB.
Does DMN65D8LQ-13 have integrated ESD protection?
Yes - the device features gate-to-source ESD protection rated to 1kV per Human Body Model (HBM), as confirmed in the datasheet's "Top View" diagram and "Features" section, making it robust against handling and board-level electrostatic discharge.
Can DMN65D8LQ-13 be used in a high-side switch configuration?
No - as an N-channel MOSFET with source tied to ground in SOT23-3, it is inherently suited for low-side switching. High-side use would require gate voltage boosted above the drain rail, which is not supported by its ±20V VGS rating or internal structure.
Is the body diode in DMN65D8LQ-13 suitable for synchronous rectification?
Yes - the integrated body diode has a typical forward voltage of 0.8V at 115mA and is rated for 500mA continuous current, enabling use in low-current synchronous rectifier or freewheeling paths where reverse recovery time is not critical.
DMN65D8LQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 310mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3Ohm @ 115mA, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.87 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 22 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 370mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
DMN65D8LQ-13 FAQ
1.How can I place an order for DMN65D8LQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN65D8LQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN65D8LQ-13 reliable?
The price and inventory of DMN65D8LQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN65D8LQ-13 is usually 5 days.
3.What payment methods are accepted for DMN65D8LQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN65D8LQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN65D8LQ-13?
DMN65D8LQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN65D8LQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN65D8LQ-13?
For technical support, including DMN65D8LQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN65D8LQ-13 requirements.
6.How does Aetrix verify that DMN65D8LQ-13 is sourced from the original manufacturer or authorized distributors?
All DMN65D8LQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN65D8LQ-13 meets industry standards.
7.What is the process for return or replacement of DMN65D8LQ-13?
All DMN65D8LQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN65D8LQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN65D8LQ-13 part is unused and in its original packaging.
Return procedure for DMN65D8LQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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